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21. 发明专利

JPH11111734A METHOD OF FORMING SURFACE PROTECTION FILM 失效
公开(公告)号：JPH11111734A
公开(公告)日：1999-04-23
申请号：JP26827397
申请日：1997-10-01
申请人： FUJITSU LTD
发明人： SUDO HAJIME , ARINAGA KENJI , FUJIWARA KOJI , MIYATAKE TETSUYA
IPC分类号： H01L21/461 , H01L21/302 , H01L21/306 , H01L21/465 , H01L21/471 , H01L31/10
摘要： PROBLEM TO BE SOLVED: To avoid the occurrence of resist residues and etching damages, when a surface protection film is formed, in relation to method for forming the surface protection film. SOLUTION: After a p-n junction 2 has been formed at an HgCdTe semiconductor 1, a first insulating film 3 and a second insulating 8 film 4 whose composition is different from the first insulating film 3 are deposited on the HgCdTe semiconductor 1, and after the second insulating film 4 positioned near the p-n junction 2 has been removed by dry-etching, the first insulating film 3 is selectively removed by wet-etching with the second insulating film 4 as a mask to have the p-n junction 2 exposed, then a protective film 6 is selectively formed on the exposed surface.

22. 发明专利

JPH09289334A INFRARED SENSOR AND MANUFACTURING METHOD THEREOF 失效
公开(公告)号：JPH09289334A
公开(公告)日：1997-11-04
申请号：JP10162196
申请日：1996-04-23
申请人： FUJITSU LTD
发明人： ARINAGA KENJI , SUDO HAJIME , FUJIWARA KOJI
IPC分类号： H01L21/66 , H01L31/10
摘要： PROBLEM TO BE SOLVED: To non-destructively inspect the characteristics of a diffused region which forms a photo detecting part of an infrared sensor by forming an electrode part composed of at least two mutually electrically isolated electrode elements surrounding the photodetecting part on a substrate. SOLUTION: Electrodes 3A-3D surrounding a photodetecting region 2 in a HgCdTe or other semiconductor substrate 1 are mutually electrically isolated electrodes 3A-3D. When an electromagnetic wave e.g. a laser beam is irradiated on the detecting region 2, electrons and holes are generated to result in an electromotive force which causes a voltage between the adjacent or counter electrodes 3A-3D. This voltage generated between these electrodes is detected by a tester to judge whether the characteristics of the photodetecting region 2 are good or not. At such test, a probe electrode has no need of direct contact with this detecting region 2.

23. 发明专利

JPH0922996A HYBRID SOLID STAGE IMAGING DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH0922996A
公开(公告)日：1997-01-21
申请号：JP16845295
申请日：1995-07-04
申请人： FUJITSU LTD
发明人： SUDO HAJIME , ARINAGA KENJI , FUJIWARA KOJI
IPC分类号： H01L27/146 , H01L21/302 , H01L21/3065 , H01L27/14
摘要： PROBLEM TO BE SOLVED: To provide a bump electrode structure capable of forming a hybrid solid state imaging device having a high integration degree by press bonding. SOLUTION: A substrate 1 provided with a photoelectric transducer and a substrate 4 provided with a signal processing element are coupled by coupling electrodes 3, 5, and a taper 2 is provided at the photoelectric transducer region of the substrate 1 provided with the converter.

24. 发明专利

JPH06204449A PHOTODETECTOR AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH06204449A
公开(公告)日：1994-07-22
申请号：JP34744092
申请日：1992-12-28
申请人： FUJITSU LTD
发明人： FUJIWARA KOJI , SUDO HAJIME , NAKAMURA HIROKO , ARINAGA KENJI , KAJIWARA NOBUYUKI
IPC分类号： H01L27/146 , H01L31/0264
摘要： PURPOSE:To obtain a hybrid photodetector of a simple process in which a photodetector element is isolated, and the surface of the photodetector element is flat. CONSTITUTION:In one Si substrate 1-1, a recessed part 11 is provided, a HgCdTe layer 2 is buried in the recessed part 11, a through-hole 12 is provided extending through the Si substrate 1-1 from the bottom of the recessed part 11, impurity atoms are introduced from the through-hole 12 form a p-n junction in the buried HgCdTe layer 2 to provide a photodetector element 4, a common electrode 14 of the photodetector element 4 is provided, a conductive layer 15 is formed in the through-hole 12 and the other electrode 16 of the photodetector element 4 is provided, and the electrode 16 and a signal processing element 5 provided in another Si substrate 1-2 are connected by a metal bump 6.

25. 发明专利

JPH06125108A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH06125108A
公开(公告)日：1994-05-06
申请号：JP27608392
申请日：1992-10-14
申请人： FUJITSU LTD
发明人： SUDO HAJIME , KAJIWARA NOBUYUKI , ARINAGA KENJI , FUJIWARA KOJI , NAKAMURA HIROKO
IPC分类号： H01L31/10
摘要： PURPOSE:To provide an infrared ray detection device which does not interfere in transmission of infrared ray to be detected, has large vibration resistance to mechanical vibration and enables effective pixel separation, and a manufacturing method thereof. CONSTITUTION:A groove part 12 is provided to an element formation region of an Si substrate 4, a compound semiconductor layer is buried in the groove part 12, the buried compound semiconductor layer is converted to Hg1-xCdxTe crystal 2 for element formation, a photodetecting element 8 is provided to the crystal 2, a recessed part 22 reaching the crystal 2 from a rear of the Si substrate 4 is provided in opposition to the buried crystal 2, a reflection preventing film 13 is provided to a rear side of the Si substrate 4 provided with the recessed part 22 and the Si substrate 4 excepting the formed groove part 12 is constituted as a pixel separation region.

26. 发明专利

JPH0385762A PHOTODETECTOR 失效
公开(公告)号：JPH0385762A
公开(公告)日：1991-04-10
申请号：JP22403789
申请日：1989-08-29
申请人： FUJITSU LTD
发明人： ARINAGA KENJI
IPC分类号： H01L31/04 , H01L27/14
摘要： PURPOSE:To prevent crosstalk from occurring by introducing impurities for element formation, in the vertical direction to the thickness direction, into a narrow energy band gap semiconductor crystal sandwiched between wide energy band gap semiconductor crystals. CONSTITUTION:To get a photodetector for detecting infrared rays of, for example, 3-5mum in wavelength, wide energy band gap semiconductor crystals 11 of Hg1-xCdxTe (x>=0.5), whose energy gaps are about 0.5eV each at 77 deg.K, and narrow energy band gap semiconductor crystals 12 of P-type Hg1-xCdxTe (x=0.3) whose energy gas are 0.25eV each at 77 deg.K are formed to stack alternately, and ions of B atoms, which shown N-type conductivity, are implanted in the direction vertical to the thickness direction of the semiconductor crystal 12 of the narrow band gap so as to provide a light receiving element 13. A wiring electrode 16 consisting of In is formed on the light receiving element by deposition so as to form a photodetector.

27. 发明专利

JP2001244445A OPTICAL SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 失效
公开(公告)号：JP2001244445A
公开(公告)日：2001-09-07
申请号：JP2000050664
申请日：2000-02-28
申请人： FUJITSU LTD
发明人： ARINAGA KENJI , SUDO HAJIME
IPC分类号： H01L27/14 , H01L31/10
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor device and its manufacturing method for reducing the number of masks and productive steps when the optical semiconductor device like a pn-junction photo diode is manufactured. SOLUTION: An upper part of a p-type semiconductor 21 is covered with a surface protective film 22. A wiring electrode 23 having an opening 23A for introducing an n-type impurity and an opening 23B for introducing the n-type impurity is deposited in a laminated state on the surface protective film 22. An n-type impurity region 24 made of boron implanted from the opening 23A and an n-type impurity region 25 made of boron implanted from the opening 23B are formed. Then, an ohmic electrode in contact with the n-type impurity region 24 is formed on the surface protective film 22.

28. 发明专利

JP2000091621A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2000091621A
公开(公告)日：2000-03-31
申请号：JP25960398
申请日：1998-09-14
申请人： FUJITSU LTD
发明人： MIYATAKE TETSUYA , ARINAGA KENJI , SUDO HAJIME , FUJIWARA KOJI
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/461 , H01L31/10
摘要： PROBLEM TO BE SOLVED: To prevent an n-type impurity area and n-type reverse damage area from being overlapped even at the time of forming a separated groove for deciding the n-type impurity area as a pixel on a semiconductor substrate containing Hg whose conductivity type is inverted from p-type to n-type, when given any physical damage by applying a dry etching method in this method for manufacturing a semiconductor device. SOLUTION: At the time of carrying out dry etching working to a p-type HgCdTe substrate 21 whose conductive type is inverted from p-type to n-type according to any physical damage, free Hg generated by the dry etching is not fetched into a semiconductor substrate containing Hg again but radiated to the outside part, so that conductive reverse damage spreading amounts 26A can be reduced. Thus, a dry etching process for selecting the kind of etching gas and for controlling the mixing ratio of each etching gas is included in this dry etching working.

29. 发明专利

JPH10256592A SEMICONDUCTOR PHOTODETECTOR AND METHOD OF ITS MANUFACTURE 失效
公开(公告)号：JPH10256592A
公开(公告)日：1998-09-25
申请号：JP6102797
申请日：1997-03-14
申请人： FUJITSU LTD
发明人： FUJIWARA KOJI , MIYATAKE TETSUYA , ARINAGA KENJI , SUDO HAJIME
IPC分类号： H01L31/10 , H01L31/0264
摘要： PROBLEM TO BE SOLVED: To form a positioning mark in which a p type region in an electrode connection region is prevented from being subjected to n type inversion, and which enjoys good reproducibility of a shape thereof, and in which confirmation of a correct shape is facilitated in a method of manufacturing a semiconductor pohotodetector including a conductive type region becoming a photodetector part which is formed on a mercury cadmium tellurium substrate with ion implantation and an electrode formed in the electrode connection region to the conductivity region and the substrate. SOLUTION: A conductive film 24b is formed on a p type mercury cadmium tellurium layer 21, and an insulating film 29 is formed on the surface of the mercury cadmium tellurium layer 21 covering the conductive film 24b, and further an etching resistant film 30 having an opening 31c is formed in an electrode connection region. The insulating film 29 is dry etched through the opening 31c in the etching resistant film 30 to form an opening 32c on the conductive film 24b, and there is formed an electrode in contact with the conductive film 24b through the opening part 32c in the insulating film 29.

30. 发明专利

JPH10163517A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH10163517A
公开(公告)日：1998-06-19
申请号：JP31903496
申请日：1996-11-29
申请人： FUJITSU LTD
发明人： MIYATAKE TETSUYA , ARINAGA KENJI
IPC分类号： H01L21/302 , H01L21/3065 , H01L31/0264 , H01L31/10
摘要： PROBLEM TO BE SOLVED: To improve the sensitivity of a photodiode array without deteriorating the degree of integration of the array by providing an etch-damaged area, which is inverted in conductivity on a semiconductor substrate of one conductivity on which an area of the opposite conductivity is provided. SOLUTION: An etch-damaged region 3 which is inverted in conductivity is provided on a semiconductor substrate 1 of one conductivity, on which a region 2 of the opposite conductivity is provided. The semiconductor substrate of one conductivity means a semiconductor substrate of one conductivity itself or an epitaxial semiconductor layer of one conductivity grown on a substrate. When the etch-damaged area 3 is formed by over-etching a contact hole 4 to the region 2, the region 3 exists around the bottom section of the contact hole 4 and the region of a p-n junction can be increased in the depth direction. The regions 2 and 3 constitute photosensitive areas.

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