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21. 发明专利

JP2011076736A Plasma source, and ion source equipped with the same 有权
标题翻译：等离子体源和与其同样的离子源
公开(公告)号：JP2011076736A
公开(公告)日：2011-04-14
申请号：JP2009224030
申请日：2009-09-29
申请人： Nissin Ion Equipment Co Ltd , 日新イオン機器株式会社
发明人： MATSUMOTO TAKESHI
IPC分类号： H01J27/08 , H01J37/08
摘要： PROBLEM TO BE SOLVED: To provide a plasma source having a filament made of tantalum and having little deformation due to its own weight at heating of the filament, and to provide an ion source equipped with the same.
SOLUTION: The plasma source 2 composing the ion source is provided with a plasma generation vessel 4 and a plurality of filaments 10 arranged in the above vessel. Each of the filaments 10 is made of tantalum and moreover each of the filaments 10 is arranged almost vertically (namely, in a gravity G direction).
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有由钽制成的细丝的等离子体源，并且在加热灯丝时由于其自身重量而几乎没有变形，并且提供配备有该灯丝的离子源。构成离子源的等离子体源2设置有等离子体发生容器4和布置在上述容器中的多根细丝10。每个细丝10由钽制成，而且每个细丝10几乎垂直布置（即，在重力G方向上）。版权所有（C）2011，JPO＆INPIT

22. 发明专利

JP2011035369A Wafer holding mechanism, wafer holder, and electrostatic chuck 有权
标题翻译： WAFER控制机构，WAFER HOLDER和静电卡盘
公开(公告)号：JP2011035369A
公开(公告)日：2011-02-17
申请号：JP2010027466
申请日：2010-02-10
申请人： Nissin Ion Equipment Co Ltd , 日新イオン機器株式会社
发明人： CHO IKO , KAWAKAMI KYOKO , SASAKI JUNJI , KIMURA JUNJI , YAMASHITA TAKATOSHI
IPC分类号： H01L21/683 , H02N13/00
摘要： PROBLEM TO BE SOLVED: To sufficiently adsorb and fix a wafer of different size without impairing temperature control performance for the fixed wafer. SOLUTION: A wafer holding mechanism includes: a wafer holder 2 formed in conformity with the shape of a wafer W, and having an opening hole 21 where the wafer W is stored and a holding claw 22 extended to below a lower opening edge of the opening hole 21 and coming into contact with a lower surface of the wafer W in the state in which the wafer W is stored in the opening hole 21 to hold the wafer; and an electrostatic chuck 3 having an electrostatic adsorption surface 301 in a substantially plane shape and including a holding claw storage groove 3M formed to store the holding claw 22 in a state in which the wafer holder 2 and the wafer W held by the holder 2 are mounted on the electrostatic adsorption surface. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了充分吸附和固定不同尺寸的晶片，而不损害固定晶片的温度控制性能。解决方案：晶片保持机构包括：晶片保持器2，其形成为与晶片W的形状一致，并且具有存储晶片W的开口孔21和延伸到下开口边缘下方的保持爪22 并且在晶片W被储存在开孔21中以保持晶片的状态下与晶片W的下表面接触; 以及具有基本平面形状的静电吸附面301的静电吸盘3，具有形成为将保持爪22保持在由保持架2保持的晶片保持架2和晶片W的状态下形成的保持爪存储槽3M 安装在静电吸附表面上。版权所有（C）2011，JPO＆INPIT

23. 发明专利

JP2010267504A Ion source 有权
标题翻译：离子源
公开(公告)号：JP2010267504A
公开(公告)日：2010-11-25
申请号：JP2009118264
申请日：2009-05-15
申请人： Nissin Ion Equipment Co Ltd , 日新イオン機器株式会社
发明人： MIYAMOTO NAOKI
IPC分类号： H01J27/08 , H01J37/08
摘要： PROBLEM TO BE SOLVED: To provide an ion source capable of being miniaturized with high efficiency of ion-beam generation. SOLUTION: The ion source 2 includes a plasma-generating chamber 22, a hot cathode 10 arranged in the same, a gas supply pipe 28 supplying raw-material gas 8 to an inner conductor 14, and a drawer electrode system 36 equipped with a plasma electrode 38 for drawing out ion beams 50 from plasma 20. The hot cathode 10 includes a hollow outer conductor 12, the hollow inner conductor 14 arranged concentrically inside the same, and a connecting conductor electrically connecting tips of both conductors 12, 14. The raw-material gas 8 is released into the plasma generating chamber 22 from the tip of the inner conductor 14. The plasma electrode 38, also serving as an anode, is arranged at one end of the plasma chamber 22 so as to be opposed to a tip of the hot cathode 10, and that, has an ion-extracting hole in front of the tip of the inner conductor 14 of the hot cathode 10. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供能够以高效率的离子束产生小型化的离子源。解决方案：离子源2包括等离子体产生室22，布置在其中的热阴极10，将原料气体8供应到内部导体14的气体供应管28和装备有的电极系统36 具有用于从等离子体20抽出离子束50的等离子体电极38.热阴极10包括中空的外部导体12，同心地布置在其中的中空的内部导体14和连接导体，电连接两个导体12,14的尖端原料气体8从内部导体14的前端释放到等离子体发生室22.等离子体电极38也用作阳极，在等离子体室22的一端配置成相对的到热阴极10的尖端，并且在热阴极10的内部导体14的前端具有离子提取孔。版权所有（C）2011，JPO＆INPIT

24. 发明专利

JP2010245053A Ion implantation apparatus 有权
标题翻译：离子植入装置
公开(公告)号：JP2010245053A
公开(公告)日：2010-10-28
申请号：JP2010162891
申请日：2010-07-20
申请人： Nissin Ion Equipment Co Ltd , 日新イオン機器株式会社
发明人： YAMASHITA TAKATOSHI
IPC分类号： H01J37/317 , H01J37/12
摘要： PROBLEM TO BE SOLVED: To increase the efficiency of transporting ion beams, by compensating the divergence of the ion beams in a Y direction which is caused by their space charge effect of the ion beam, between an ion-beam deflector which separates them and neutral particles from each other and a target, in an ion implantation apparatus.
SOLUTION: The ion implantation apparatus has a beam paralleling apparatus 14 which bends and returns ion beams 4 scanned in an X direction by a magnetic field, and makes them parallel with each other by the magnetic field, and further, derives the ion beams 4 having ribbon-form shapes. The beam paralleling apparatus 14 combines itself with an ion-beam deflector which deflects the ion beams 4 by a magnetic field, and separates the ion beams 4 and neutral particles from each other. The ion implantation apparatus has a plurality of electrodes which are disposed oppositely to each other in a Y direction while being interposed between them and the space of the ion beams 4 passing therein, near the exit of the beam paralleling apparatus 14. Further, an electric lens 30 which squeezes the ion beams 4 in the Y direction is provided in the ion implantation apparatus.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提高输送离子束的效率，通过补偿由离子束的空间电荷效应引起的Y方向上的离子束的发散，离子束分离它们和中性粒子彼此之间以及靶，在离子注入装置中。解决方案：离子注入装置具有：束并联装置14，其通过磁场弯曲并返回沿X方向扫描的离子束4，并使其通过磁场彼此平行，并且还导出离子梁4具有带状形状。光束并联装置14自身与离子束偏转器结合，离子束偏转器使离子束4偏转磁场，并将离子束4和中性粒子彼此分离。离子注入装置具有多个电极，它们彼此相对地设置在Y方向上彼此相对设置，并且离子束4的空间在光束平行装置14的出口附近通过。此外，电在离子注入装置中设置有在Y方向挤压离子束4的透镜30。版权所有（C）2011，JPO＆INPIT

25. 发明专利

JP2010199073A Ion beam application method and ion beam application device 有权
标题翻译：离子束应用方法和离子束应用器件
公开(公告)号：JP2010199073A
公开(公告)日：2010-09-09
申请号：JP2010058732
申请日：2010-03-16
申请人： Nissin Ion Equipment Co Ltd , 日新イオン機器株式会社
发明人： OKUTE YASUHIRO
IPC分类号： H01J37/317 , H01L21/265
摘要： PROBLEM TO BE SOLVED: To treat a substrate having a width wider than a beam width, not to generate an unfavorable effect in a beam ranging portion. SOLUTION: The beam application method includes: executing twice a beam application step of forming a beam application area by irradiating the substrate 10 with an ion beam 4 while moving the substrate 10, by using the ion beam 4 having the Y-directional beam width including cells 20 with lines of the half number of m lines or more, in the substrate 10 formed with a line-forming division band 22 within a plane and the plurality of cells 20 arrayed with m line n columns (m is 3 or more, and n is an integer of 2 or more) with a column forming division band therebetween; executing a substrate position changing step of changing the line of the cells 20 irradiated with the ion beam 4, by rotating the substrate 10 by 180° within the plane thereof and by moving it Y-directionally, in the intervals of the beam radiation step; and irradiating all the cells 20 with the ion beam 4, by putting together the both beam application areas. A joining part of the two beam application areas is positioned in the line-forming division band 22, and a Y-directional end part of the ion beam 4 is shaped in parallel to an X-direction, by a mask. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了处理宽度大于光束宽度的基板，不会在光束测距部分中产生不利影响。解决方案：光束施加方法包括：通过使用具有Y方向的离子束4移动衬底10同时用离子束4照射衬底10来执行形成束施加区域的光束施加步骤两次在具有在一个平面内形成线形分割带22的基板10中，并且以m行n列排列的多个单元20（m为3或更多，n为2以上的整数），在其间形成分隔带; 执行基板位置改变步骤，通过在基板10的平面内将基板10旋转180°，并且以波束辐射步骤的间隔Y方向移动来改变用离子束4照射的单元20的线; 并且通过将两个光束施加区域组合在一起，用离子束4照射所有的单元20。两个光束施加区域的接合部分位于线形分割带22中，并且通过掩模将离子束4的Y方向端部平行于X方向成形。版权所有（C）2010，JPO＆INPIT

26. 发明专利

JP2010092619A Ion implanting device 有权
标题翻译：离子植入装置
公开(公告)号：JP2010092619A
公开(公告)日：2010-04-22
申请号：JP2008258718
申请日：2008-10-03
申请人： Nissin Ion Equipment Co Ltd , 日新イオン機器株式会社
发明人： HINO MASAYASU
IPC分类号： H01J37/317 , H01L21/265
CPC分类号： H01J37/3171 , H01J37/20 , H01J37/22 , H01J37/222 , H01J2237/202 , H01J2237/20292 , H01J2237/221 , H01J2237/226 , H01J2237/2482
摘要： PROBLEM TO BE SOLVED: To dispensing with bending and stretching of a light guide leading light from a vacuum vessel to a light-emitting unit constituting an illuminating device for notch position detection of a substrate, in a mechanical scanning system ion implanting device.
SOLUTION: The illuminating device 40 is provided with a light source 42 fitted outside a vacuum vessel 6, a light guide 44 guiding its light into the vacuum vessel 6, a projection part 46 fixed inside the vacuum vessel 6 for emitting light 48 guided by the light guide 44, a light-receiving part 50 attached to a support stand 18 of a holder driving device 10 for receiving light 48 from the projection part 46 with a holder 12 in a state positioned at a notch detecting position 28, a light guide 52 guiding light received with the light-receiving part, and a light-emitting unit 54 attached to the support stand 18 for irradiating the light 48 guided by the light guide 52 on an outer periphery part of the substrate 2.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：在机械扫描系统离子注入装置中，为了分配引导光从真空容器到构成用于衬底的缺口位置检测的照明装置的发光单元的弯曲和拉伸。解决方案：照明装置40设置有安装在真空容器6外部的光源42，将其引导到真空容器6中的导光体44，固定在真空容器6内用于发射光48的突出部46 由光导44引导的光接收部分50，其安装在保持器驱动装置10的支撑架18上，用于从处于位于切口检测位置28的状态的保持器12从突出部46接收光48，导光体52引导受光部接收的光;以及发光单元54，安装在支撑台18上，用于将由导光体52引导的光48照射在基板2的外周部。版权所有（C）2010，JPO＆INPIT

27. 发明专利

JP2010086824A Ion implantation method, and ion implantation device 审中-公开
标题翻译：离子植入方法和离子植入装置
公开(公告)号：JP2010086824A
公开(公告)日：2010-04-15
申请号：JP2008255533
申请日：2008-09-30
申请人： Nissin Ion Equipment Co Ltd , 日新イオン機器株式会社
发明人： NICOLAESCU DAN
IPC分类号： H01J37/317 , H01L21/265
摘要： PROBLEM TO BE SOLVED: To provide a novel ion implantation method in which a variety of patterns of implantation amount distribution can be made inexpensively and an uneven implantation such that implantation distributions between each implantation regions become continuous and smooth can be performed. SOLUTION: In the ion implantation, at least one of scanning of an ion beam IB by electric field or magnetic field or translation movement of the substrate is carried out by simultaneously rotating the substrate W centered on a rotating axis RA crossing the surface on which the ion beam IB is irradiated. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种新颖的离子注入方法，其中可以廉价地进行各种植入量分布的图案，并且可以执行不均匀注入，使得每个注入区域之间的注入分布变得连续且平滑。解决方案：在离子注入中，通过电场或磁场扫描离子束IB或基板的平移运动中的至少一种是通过同时旋转以与穿过表面的旋转轴线RA为中心的衬底W来进行的在其上照射离子束IB。版权所有（C）2010，JPO＆INPIT

28. 发明专利

JP2010080429A Ion source 有权
标题翻译：离子源
公开(公告)号：JP2010080429A
公开(公告)日：2010-04-08
申请号：JP2009122675
申请日：2009-05-21
申请人： Nissin Ion Equipment Co Ltd , 日新イオン機器株式会社
发明人： YAMASHITA TAKATOSHI , IKEJIRI TADASHI , IAI TETSUYA
IPC分类号： H01J27/14
CPC分类号： H01J27/14
摘要： PROBLEM TO BE SOLVED: To provide an ion source generating ion beam containing aluminum ion, which can reduce the number of components and can simplify its structure. SOLUTION: The ion source includes: a plasma generating vessel 2 into which ionized gas 8 containing fluorine is introduced; a thermionic cathode 12 fitted on one side inside the vessel 2; which is fitted on the other side of the inside of the plasma generating vessel 2 and reflects electrons by a negative voltage V B being applied on the vessel 2 from a bias power source 24; and a magnet 30 generating a magnetic field 28 along a line connecting the thermionic cathode 12 and the counter reflecting electrode 20. The counter reflecting electrode 20 is composed of an aluminum containing material. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种离子源产生含有铝离子的离子束，其可以减少部件的数量并且可以简化其结构。解决方案：离子源包括：等离子体发生容器2，其中引入含氟的电离气体8; 安装在容器2内的一侧的热离子阴极12; 其安装在等离子体发生容器2的内侧的另一侧，并且通过从偏压电源24施加在容器2上的负电压V SB B 反射电子; 以及沿着连接热离子阴极12和反射反射电极20的线产生磁场28的磁体30.反射反射电极20由含铝材料构成。版权所有（C）2010，JPO＆INPIT

29. 发明专利

JP2010050108A Ion beam measuring method 有权
标题翻译：离子束测量方法
公开(公告)号：JP2010050108A
公开(公告)日：2010-03-04
申请号：JP2009273353
申请日：2009-12-01
申请人： Nissin Ion Equipment Co Ltd , 日新イオン機器株式会社
发明人： IKEJIRI TADASHI , CHO IKO , TANAKA KOHEI
IPC分类号： H01J37/04 , G01T1/29 , H01J37/317 , H01L21/265
摘要： PROBLEM TO BE SOLVED: To provide a measuring method to measure divergence angles in X direction and Y direction of ion beams of ribbon form.
SOLUTION: This ion beam measuring method uses a mask plate 60 having a small hole 62 to pass a part of ion beams 2 and a beam monitor 10 which is installed at the downstream side and has a plurality of beam detectors 12 to receive the ion beams passing through the small hole and respectively detect the beam current, which are located in X direction and movable in Y direction. Then, by moving the beam monitor 10 in the Y direction, the center positions x
3 , y
3 in the X direction and Y direction of the ion beams which have passed through the small hole 62 are respectively measured. Then, based on the distance L
4 , L
5 in the X direction and Y direction between the corresponding center positions x
3 , y
3 and the small hole 62 and the distance L
3 in Z direction between the mask plate 60 and the beam monitor 10, the divergence angles α
x , α
y in the X direction and Y direction of the ion beams passing through the small hole 62 are respectively measured.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供测量方法来测量带状离子束的X方向和Y方向上的发散角。解决方案：该离子束测量方法使用具有小孔62的掩模板60使一部分离子束2和安装在下游侧的束监视器10通过，并具有多个光束检测器12以接收离子束通过小孔并分别检测位于X方向并在Y方向移动的束电流。然后，通过在Y方向移动光束监视器10，在已经通过的离子束的X方向和Y方向上的中心位置x 3 y 3 分别测量小孔62。然后，基于X方向上的距离L 4 L 5 和对应的中心位置x 3 之间的Y方向，y 3 和小孔62以及掩模板60和光束监视器10之间的Z方向上的距离L 3 ，发散角α x 分别测量通过小孔62的离子束的X方向和Y方向的α y 。版权所有（C）2010，JPO＆INPIT

30. 发明专利

JP2009134923A Ion beam irradiation method and ion beam irradiation device 有权
标题翻译：离子束辐照方法和离子束辐照装置
公开(公告)号：JP2009134923A
公开(公告)日：2009-06-18
申请号：JP2007308624
申请日：2007-11-29
申请人： Nissin Ion Equipment Co Ltd , 日新イオン機器株式会社
发明人： OKUTE YASUHIRO
IPC分类号： H01J37/317 , G02F1/13 , H01L21/265
摘要： PROBLEM TO BE SOLVED: To prevent an adverse effect on treatment of a required processing range in a substrate even though one substrate is partitioned, and to consequently process the substrate having a width greater than a beam width. SOLUTION: Upon using an ion beam 4 with a beam width where both ends in the Y direction are respectively located on two row formation and partition bands 22 holding cells 20 of p rows (p is an integer of 1≤p≤(m-2)) to the substrate 10 forming a plurality of cells 20 arranged at m rows and n columns (here, m is an integer of 3 or above, and n is an integer of 2 or above) by holding a row formation and partition band 22 and a column formation and partition band in its surface, a plurality of beam radiation steps for forming a beam radiation range 30 are carried out by radiating the ion beam 4 while the substrate 10 is moved in the X direction, a substrate position change step for changing a row of the cell 20 irradiating the ion beam 4 by changing the position of the substrate 10 is carried out in the spacings of the beam radiation step and the ion beam 4 is radiated to the whole cells 20 by lining up a plurality of the beam irradiation ranges 30. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了防止对基板中的所需处理范围的处理产生不利影响，即使一个基板被分割，并且因此处理具有大于波束宽度的宽度的基板。解决方案：使用具有Y宽方向的两端的光束宽度的离子束4分别位于保持p行的单元20的两行形成和分隔带22上（p为1≤p≤（ m-2））通过保持行形成形成多个以m行n列排列的单元20（这里，m为3以上，n为2以上的整数）的基板10，分隔带22和其表面中的列形成和分隔带，用于形成光束辐射范围30的多个光束辐射步骤通过在衬底10沿X方向移动的同时照射离子束4，衬底位置通过改变基板10的位置来改变照射离子束4的单元20的一行的改变步骤是在束辐射步骤的间隔中进行的，并且离子束4通过排列一个多个光束照射范围30.版权所有（C）2009，JPO＆INPIT

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