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11. 发明专利

JP2006009058A Partial plating equipment and partial plating method 有权
标题翻译：部分镀层设备及部分镀层方法
公开(公告)号：JP2006009058A
公开(公告)日：2006-01-12
申请号：JP2004184549
申请日：2004-06-23
申请人： Furuya Kinzoku:Kk , 株式会社フルヤ金属
发明人： SHIMAMUNE TAKAYUKI
IPC分类号： C25D5/06 , C25D3/50 , C25D17/10 , C25D17/12 , C25D21/04
摘要： PROBLEM TO BE SOLVED: To provide partial plating equipment where work can be safely performed while satisfactorily maintaining the work environment, and plating treatment can be stably performed in a short time with current efficiency highly held.
SOLUTION: In the partial plating equipment 1, an insoluble anode 11 has a hollow structure having many pores allowing the outside and the hollow part to communicate with each other at the wall part, and is adhesively covered with a diaphragm 12, and further, a plating liquid holding body 13 is adhesively provided around the outer circumference of the diaphragm 12. In this way, an electrolysis gas generated at the surface of the anode 11 during plating treatment is collected from the pores 111 and is exhausted to the outside of the system through the hollow part 112, and further, anodization or the like are suppressed by the diaphragm 12, thus high current efficiency can be obtained.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供能够安全地进行工作的部分电镀设备，同时令人满意地保持工作环境，并且可以在高效保持电流效率的短时间内稳定地进行电镀处理。解决方案：在局部电镀设备1中，不溶性阳极11具有允许外壁和中空部在壁部彼此连通的许多孔的中空结构，并且用隔膜12粘合地覆盖，并且此外，在隔膜12的外周附近粘接设置电镀液保持体13.以这种方式，在电镀处理期间在阳极11的表面产生的电解气体从孔111收集并排出到外部通过中空部112而进一步抑制阳极氧化等，能够获得高的电流效率。版权所有（C）2006，JPO＆NCIPI

12. 发明专利

JP2003530486A Palladium or electrolytic bath for electrochemically deposited alloys thereof 有权
公开(公告)号：JP2003530486A
公开(公告)日：2003-10-14
申请号：JP2001575263
申请日：2001-04-05
申请人：メタロールテクノロジーフランスエスアーエス
发明人：ゴンザレスジョゼ , リメイラックミシェル , シャリュモーリオネル
IPC分类号： C25D3/50 , C25D3/52 , C25D3/56
CPC分类号： C25D3/52 , C25D3/567
摘要： (57)【要約】本発明は、パラジウム又はその合金の電気化学的に析出させるための酸性ｐＨの水性電解浴であって、前記浴が、パラジウム化合物、及び、必要であればパラジウムとの合金の形態で共析出する少なくとも１つの第二金属の化合物を含み、パラジウム錯化剤としてのエチレンジアミン、及び、有機光沢剤もさらに含み、前記光沢剤が３−（３−ピリジル）アクリル酸、３−（３−キノリル）アクリル酸又はそれらの塩の１つ、好ましくはそれらのアルカリ金属塩の１つであることを特徴とする電解浴に関する。さらに、パラジウム又はパラジウム合金を電気めっきする方法であって、０．５〜１５０Ａ／ｄｍ
２の電流密度を使用して、上記の電解浴を稼働させることを特徴とする方法に関する。

13. 发明专利

JP2002544103A Sulfuric acid rhodium compounds and rhodium-plated 审中-公开
公开(公告)号：JP2002544103A
公开(公告)日：2002-12-24
申请号：JP2000617132
申请日：2000-05-03
申请人：ルーセントテクノロジーズインコーポレイテッド
发明人：アビス、ジョゼフ、アンソニー , エプステイン、ピーター , ダラガン、コナー、アンソニー , メイサノ、ジョセフ、ジョン、ジュニア
IPC分类号： C01G55/00 , C25D3/50
CPC分类号： C01G55/00 , C25D3/50
摘要： (57)【要約】【課題】金属錯体に対し金属が最小となり、硫酸群の中で最も錯体が形成されやすい硫酸ロジウム溶液を提供する。【解決手段】本発明の硫酸ロジウム溶液をロジウムメッキの電解質として使用することにより、光沢が改善され応力が低減した電気メッキ層が得られる。

14. 发明专利

JP2002100373A MANUFACTURING METHOD OF CATALYZED POROUS CARBON ELECTRODE FOR FUEL CELL 审中-公开
公开(公告)号：JP2002100373A
公开(公告)日：2002-04-05
申请号：JP2001232852
申请日：2001-06-25
申请人： WAUTEKKU KK
发明人： KIM DONG-IL , LEE CHANG-HYEONG , KIM DONG-CHUN
IPC分类号： H01M4/88 , C25D3/50 , H01M4/86 , H01M4/90 , H01M4/92 , H01M4/96 , H01M8/10
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a catalyzed porous electrode for fuel cells which has excellent and stable catalyst efficiency, and can be manufactured simply and easily without forming a catalyst supporting particle layer. SOLUTION: The method of manufacturing contains a stage in which a conductive and porous carbon substrate is processed with an oxidizer; a stage in which one surface of the porous substrate is made contact with an electrolysis depositing solution containing a catalyst metal ion; a stage in which the above porous substrate is catalyzed by depositing the above catalyst metal to the above porous substrate by giving pulse potential to the electrolysis depositing solution; and a stage in which the above catalyzed porous substrate is heat treated.

15. 发明专利

JP2002038293A PLATINUM PLATING SOLUTION AND PLATING METHOD THEREWITH 失效
公开(公告)号：JP2002038293A
公开(公告)日：2002-02-06
申请号：JP2000223298
申请日：2000-07-25
申请人： TANAKA PRECIOUS METAL IND
发明人： OTANI YUTAKA
IPC分类号： C25D3/50 , C25D7/12
摘要： PROBLEM TO BE SOLVED: To provide a practical platinum plating bath which has neutral pH, is hardly decomposed at an anode side, can attain a high current efficiency and a high plating speed, and besides does not include sodium or potassium of an inhibition element. SOLUTION: The platinum plating bath includes an A component consisting of one or more kinds selected from the group consisting of diamminedenitroplatinum, hexahydroxoplatinum, hexaammineplatinum hydroxy salt, and hexachloroplatinate of water-soluble platinum salt, and a B component consisting of one or more kinds selected from the group consisting of glycin, iminodiacetic acid, and nitrilotriacetic acid.

16. 发明专利

JP2001262393A CASING PART OF WATCH 失效
公开(公告)号：JP2001262393A
公开(公告)日：2001-09-26
申请号：JP2000087050
申请日：2000-03-23
申请人： KAWAGUCHIKO SEIMITSU KK
发明人： SATO MASAAKI
IPC分类号： G04B37/22 , A44C5/00 , C25D3/50 , C25D3/56 , C25D5/10 , C25D7/00
摘要： PROBLEM TO BE SOLVED: To attain plating excellent in corrosion resistance with respect to a casing part for a watch, which is made of zinc or zinc alloy cast. SOLUTION: Cu is formed to have 10-23 μm thickness as a 1st plating layer on a zinc or zinc alloy cast base material, Cu-Sn or Cu-Sn-Zn alloy is formed to have 2-4 μm thickness as a 2nd plating layer on the 1st plating layer and further Au or one kind of Au-Fe, Au-Fe-In and Au-In alloy is formed to have 0.05-2 μm thickness on the 2nd plating layer as a 3rd plating layer.

17. 发明专利

JP2001262390A PALLADIUM PLATING LIQUID 失效
公开(公告)号：JP2001262390A
公开(公告)日：2001-09-26
申请号：JP2000207992
申请日：2000-07-10
申请人： FURUKAWA ELECTRIC CO LTD , MATSUDA SANGYO CO LTD
发明人： MORI MITSUO , UEKI SHINJI , ODA KAZUHIRO , SUZUKI SATOSHI , MATSUDA AKIRA
IPC分类号： C25D3/50 , H01L23/50
摘要： PROBLEM TO BE SOLVED: To provide a palladium plating liquid having excellent plating wettability after the plated palladium plating layer has been subjected to heat, hardly causing liquid degradation and suitable as a plating liquid for lead frame and to provide the plating liquid that enables thick plating and effectively applied for the manufacture of the contact material for electron parts. SOLUTION: The palladium plating liquid contains 1-60 g/L water soluble palladium compound (expressed in terms of palladium), 1.0-50 g/L sulfurous acid or the salt and 0.1-100 g/L sulfamic acid or the salt as essential ingredients and the water soluble palladium compound is at least one kind selected from a group of a chloride, bromide, iodide and nitrite of anmine complex salt of palladium and the thick plating palladium plating liquid contains 0.1-200 g/L phosphoric acid or the salt.

18. 发明专利

JP2001049485A BLACK RUTHENIUM PLATING SOLUTION 失效
公开(公告)号：JP2001049485A
公开(公告)日：2001-02-20
申请号：JP21968499
申请日：1999-08-03
申请人： NIKKO MATERIALS CO LTD
发明人： AIBA TAMAHIRO , MIMURA TOMOHARU , OKUBO RIICHI
IPC分类号： C25D3/50
摘要： PROBLEM TO BE SOLVED: To suppress the decomposition of a thio compd. to be added as a color developing agent caused by anodic oxidation in the process of electrolysis by allowing the soln. to contain ruthenium sulfate, sulfamic acid, a thio compd. and a sacrificial oxidizer added for preventing the decomposition of the thio compd. caused by anodic oxidation in the process of electrolysis. SOLUTION: Preferably, the sacrificial oxidizer is selected from hydroxylamine sulfate, formalin and ascorbic acid, and the thio compd. is selected from thiourea, a thiourea derivative, a compd. having a marcapto group, thiomalic acid and ammonium thiocyanate. The concn. of ruthenium is desirable controlled to 1 to 10 g/L considering the current efficiency, plating time and the loss of ruthenium caused, e.g. by the cleaning of electrodeposite in the process of the treatment. The concn. of the thio compd. is preferably controlled to 0.1-10.0 g/L. In the black ruthenium plating soln., pH is preferably controlled to =40 deg.C.

19. 发明专利

JP2000237320A SUPPORTING STRUCTURE FOR PATENCY OF LUMEN 失效
公开(公告)号：JP2000237320A
公开(公告)日：2000-09-05
申请号：JP2000035977
申请日：2000-02-14
申请人： HERAEUS GMBH W C
发明人： HERKLOTZ GUENTER , KRUEGER FRANK , FREI THOMAS , GIESEL THOMAS
IPC分类号： A61F2/82 , A61L29/10 , A61L31/08 , C23C28/02 , C25D3/50 , C25D3/56 , C25D5/10 , C25D5/18 , A61M29/00
摘要： PROBLEM TO BE SOLVED: To obtain a supporting structure, such as a stent, having excellent bioaffinity by providing the structure of a supporting body for patency of a lumen having a stainless steel base body with a platinum layer forming a surface and installing at least one gold layer between the base body and the platinum layer. SOLUTION: The stent having the base body consisting of the stainless steel is brought into contact with a fine wire consisting of gold or stainless steel and is degreased in a cyanide solution by a method, such as electroplating. Next, the first gold layer (adhesive gold layer) of a layer thickness of about 0.01 to 0.2 μm is formed in a gold chloride bath on the stent. A second gold layer (fine gold layer) having a layer thickness of about 0.5 to 10.0 μm is then formed. Next, the platinum layer is formed, for which a bath consisting of a hexachloroplatinate, hexahydroxoplatinate, etc., as a base is used for the purpose of coating. In such a case, cathode current density is set at a range of about 0.5 to 2.5 A/cm2 according to the bath.

20. 发明专利

JP2000208723A METHOD FOR FORMING PLATINUM THIN FILM ORIENTED PREFERENTIALLY USING NITROGEN, AND DEVICE TO BE MANUFACTURED BY THE METHOD 失效
公开(公告)号：JP2000208723A
公开(公告)日：2000-07-28
申请号：JP3194098
申请日：1998-01-07
申请人： TONGYANG CEMENT CORP
发明人： PARK DONG YEON , LEE DONG SU , WOO HYUN JUNG , CHUN DONG IL , YOON EUI JOON
IPC分类号： H01L21/28 , C23C14/16 , C23C14/58 , C25D3/50 , C25D5/50 , C25D7/12 , H01L21/02 , H01L21/3205 , H01L21/8242 , H01L27/10 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To easily provide a method for adjusting a preferentially oriented platinum thin film by vapor-depositing the platinum thin film in an atmosphere containing nitrogen and heating it so that the film orientation becomes (111), (200) and (220). SOLUTION: When a platinum thin film having a preferential orientation in (111), (200) and (220) directions is formed on a substrate 300, it is vapor- deposited at a temperature ranging from room temperature to 500 deg.C of the substrate, in an atmosphere of an inert gas (Ar, Ne, Kr, Xe) containing a nitrogen gas, so as to form platinum thin films 304 and 306 containing a nitrogen element, and then it is heated to remove the nitrogen element, forming a platinum thin film 308. Thus, the electric conductivity can be made high (non-resistance is 15 μΩ-cm or less), the adhesion strength in excellent and defect such as hillock or pore is not generated.

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