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11. 发明专利

JPH03273609A WAFER ALIGNMENT METHOD 失效
公开(公告)号：JPH03273609A
公开(公告)日：1991-12-04
申请号：JP7390790
申请日：1990-03-23
申请人： YAMAHA CORP
发明人： NAKATANI HIROSHI
IPC分类号： G03F9/00 , H01L21/027 , H01L21/30
摘要： PURPOSE:To realize high speed and highly accurate wafer alignment and to improve design freedom by forming a resist layer such that a plurality of alignment marks are exposed on the circumference of a wafer, and then detecting the alignment mark and regulating the position of wafer. CONSTITUTION:Alignment marks M1-M5 are formed at four points in the central part and circumference of a wafer, for example, on the top face of a semiconductor wafer 10. A resist layer 16 is formed on the top face of the wafer 10. The marks M2-M5 are exposed upon removal of resist. The wafer is loaded on a step and repeat reduction aligner provided with a TTL on-axis automatic aligner, for example. The automatic aligner detects the marks M1-M5 on the wafer 10 and automatically adjusts the wafer position with respect to a photo- mask or the like. A pattern on the photo mask is transcribed, in step and repeat manner, onto the resist layer 16 on the wafer 10. A multiplicity of pattern transcribing areas are arranged on the wafer 10.

12. 发明专利

JPH1174274A FORMATION OF WIRING 失效
公开(公告)号：JPH1174274A
公开(公告)日：1999-03-16
申请号：JP20125398
申请日：1998-07-01
申请人： YAMAHA CORP
发明人： TAWARA TAKASHI , NAKATANI HIROSHI
IPC分类号： G03F7/11 , H01L21/027 , H01L21/3213
摘要： PROBLEM TO BE SOLVED: To improve the dimensional precision of wiring patterning. SOLUTION: After forming a wiring material layer 14 composed of WSi2 or the like on an insulating film 12 that covers the surface of a semiconductor substrate 10, a first antireflection film, composed of TiON or TiN and a second reflection preventing film 18 composed of an organic material such as acrylic acid resin, are successively formed on the layer 14, and resist layers 20a-20c are formed on the film 18. After dry etching the film 18 by using the layers 20a-20c as a mask, the film 16 is dry etched by using layers 20a-20c and the remaining part of the film 18 as a mask, and the layer 14 is dry-etched by using the layers 20a-20c and the remaining parts of the films 16 and 18 as a mask. The layers 20a-20c and the remaining part of the film 18 are removed, and a laminated layer that includes the remaining parts of the layer 14 and the film 16 is left as a wiring layer. After etching the film 16, the layers 20a-20c and the remaining part of the film 18 may be removed, and the layer 14 may be etched by using the remaining part of the film 16 as a mask.

13. 发明专利

JPH03278518A RESIST DRIPPING DEVICE 失效
公开(公告)号：JPH03278518A
公开(公告)日：1991-12-10
申请号：JP7937290
申请日：1990-03-28
申请人： YAMAHA CORP
发明人： NAKATANI HIROSHI
IPC分类号： G03F7/16 , B05C11/08 , H01L21/027
摘要： PURPOSE:To obtain a novel device, which can control the dripping quantity and dripping speed of resist, etc., simply and surely by equipping the device with respectively specific resist container, cylinder pump, dripping nozzle, pulse motor, conversion means and control means. CONSTITUTION:This device is equipped with a resist container 30 accommodating resist 32, a cylinder pump 18 arranging a piston 22 in freely reciprocating manner within a cylinder 20 having a suction pipe 24 and connecting the suction pipe 24 with the resist container 30 to suck in the resist 32, a dripping nozzle 26 connected with a part of the cylinder 30 to drip the resist 32 within the cylinder 20 to a processed article 14, a pulse motor 34 capable of forward and reverse rotation, conversion means 36, 22a converting the forward and reverse rotation of the pulse motor 34 into the reciprocation of the piston 22, and control means controlling the rotation of the pulse motor 34 and the pressure in the resist container 30 according to numerical information to control the resist suction from the resist container 30 to the cylinder 20 and resist dripping from the cylinder 20 via the dripping nozzle 26.

14. 发明专利

JPH0814836A SIZE MEASUREMENT DEVICE 失效
公开(公告)号：JPH0814836A
公开(公告)日：1996-01-19
申请号：JP16743194
申请日：1994-06-27
申请人： YAMAHA CORP
发明人： NAKATANI HIROSHI
IPC分类号： G01B11/02 , G01B15/00
摘要： PURPOSE:To provide a size measurement device automated to detect the abnormality of the cross sectional form of a micro sample. CONSTITUTION:This device has a scanning electron microscope(SEM) 1, and a data processing device 8 to measure the cross sectional size of a resist pattern 4 by processing an output signal from the SEM 1. The device 8 has a binarizing circuit 21 for binarizing the output signal from the SEM 1 using a plurality of threshold values, an edge detection circuit 22 for detecting the edges of respective data binarized with each threshold value, a size calculation circuit 23 for calculating a size at each threshold value, on the basis of edge information found with each threshold value, and an error detection circuit 24 for detecting a shape error through judgement about whether a correlation between a plurality of obtained cross sectional sizes and the threshold values is within the scope of the preset criterion.

15. 发明专利

JPH07218224A METHOD AND APPARATUS FOR OPTICALLY MEASURING DISTANCE 失效
公开(公告)号：JPH07218224A
公开(公告)日：1995-08-18
申请号：JP3095494
申请日：1994-02-02
申请人： YAMAHA CORP
发明人： NAKATANI HIROSHI
IPC分类号： G01B11/14 , H01L21/027
摘要： PURPOSE:To eliminate a measuring error based on a deviation, an inclination of an optical axis. CONSTITUTION:Images of objects such as marks M1, M2, etc., are sensed by enlarging and projecting it to a CCD sensor, etc., and an output of the sensor is processed to measure a distance between the marks. When an optical axis is deviated or inclined as (a), (b) to an ideal optical axis (i), a measuring error occurs. Then, the axes (a), (b) are switched to a position '0 deg.', distances La, Lb between the marks are measured, the axes (a), (b) are switched to a position '180 deg.', distances La', Lb' are measured, and measured values equal to a distance Li (=Li') between the marks to be calculated by using the axis (i) are obtained. This method is effective to accurately measure a deviation of a registration pattern to a base.

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