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11. 发明专利

JP2008047257A Magnetic storage element, magnetic memory furnished with this magnetic storage element, and driving method of magnetic memory 有权
标题翻译：磁性存储元件，磁性存储元件和磁性存储器的驱动方法
公开(公告)号：JP2008047257A
公开(公告)日：2008-02-28
申请号：JP2006224012
申请日：2006-08-21
申请人： Toshiba Corp , 株式会社東芝
发明人： KITAGAWA EIJI , YOSHIKAWA MASATOSHI , KISHI TATSUYA , YODA HIROAKI
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08
CPC分类号： G11C11/1693 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： PROBLEM TO BE SOLVED: To attain the prevention of an erroneous writing operation at the read-out.
SOLUTION: A width of a write-in current pulse for writing information into a magnetic storage layer is larger than a width of a read-out current pulse for reading the information from the magnetic storage layer.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了防止读出时的错误写入操作。解决方案：用于将信息写入磁存储层的写入电流脉冲的宽度大于用于读取来自磁存储层的信息的读出电流脉冲的宽度。版权所有（C）2008，JPO＆INPIT

12. 发明专利

JP2008028362A Magnetoresistive element and magnetic memory 审中-公开
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2008028362A
公开(公告)日：2008-02-07
申请号：JP2007044176
申请日：2007-02-23
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIKAWA MASAHISA , KAI TADASHI , NAGASE TOSHIHIKO , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , H01F10/30 , H01F10/32 , H01F41/18 , H01L21/8246 , H01L27/105 , H01L29/82
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive element capable of further reducing reversed currents when magnetization is reversed and a magnetic memory using the same. SOLUTION: The magnetoresistive element includes a first magnetization reference layer 11 the magnetization direction of which is fixed, a magnetization free layer 13 the magnetization direction of which varies owing to the action of spin-polarized electrons, a second magnetization reference layer 15 the magnetization direction of which is fixed, a first intermediate layer 12 provided between the first magnetization reference layer 11 and the magnetization free layer 13, and a second intermediate layer 14 provided between the magnetization free layer 13 and the second magnetization reference layer 15, wherein the easy magnetization direction of the magnetization free layer 13 and the first magnetization reference layer 11 is vertical or parallel to the film surface and the easy magnetization directions of the first magnetization reference layer 11 and the second magnetization reference layer 15 are perpendicular to each other. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种当磁化反转时能够进一步减少反转电流的磁阻元件和使用该磁阻元件的磁存储器。解决方案：磁阻元件包括其磁化方向固定的第一磁化参考层11，其磁化方向由于自旋极化电子的作用而变化的无磁化层13，第二磁化参考层15 其磁化方向固定，设置在第一磁化参考层11和磁化自由层13之间的第一中间层12和设置在磁化自由层13和第二磁化参考层15之间的第二中间层14，其中磁化自由层13和第一磁化参考层11的易磁化方向垂直或平行于膜表面，并且第一磁化参考层11和第二磁化参考层15的易磁化方向彼此垂直。版权所有（C）2008，JPO＆INPIT

13. 发明专利

JP2008010590A Magnetoresistive element, and magnetic memory 审中-公开
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2008010590A
公开(公告)日：2008-01-17
申请号：JP2006178615
申请日：2006-06-28
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIKAWA MASAHISA , KITAGAWA EIJI , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , H01L21/8246 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To reduce an inverted current when magnetization is inverted while maintaining the thermal stability of a magnetization free layer. SOLUTION: A magnetoresistive element is used to record information when a current is passed through layer surfaces of a layer laminate. The magnetoresistive element comprises a magnetization reference layer 11 having a magnetic anisotropy vertical to a film surface and having a fixed magnetization direction, a magnetization free layer 13 having a magnetic anisotropy vertical to the film surface and having a varying magnetization direction, and an intermediate layer 12 provided between the magnetization reference layer 11 and the magnetization free layer 13. The magnetization free layer 13 has a laminated layer structure having at least two ferroelectric layers 13A, and an interlayer coupling layer 13B provided between the ferroelectric layers 13A. The ferroelectric layers 13A are ferroelectrically coupled each other with the interlayer coupling layer 13B disposed therebetween. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了减少磁化反转时的反转电流，同时保持无磁化层的热稳定性。解决方案：当电流通过层压层的层表面时，磁阻元件用于记录信息。磁阻元件包括具有垂直于膜表面并具有固定磁化方向的磁各向异性的磁化参考层11，具有垂直于膜表面并具有变化的磁化方向的磁各向异性的磁化自由层13和具有变化的磁化方向的中间层磁化自由层13具有至少两个强电介质层13A和设置在铁电层13A之间的层间结合层13B的叠层结构。铁电层13A通过层间耦合层13B彼此铁电电耦合。版权所有（C）2008，JPO＆INPIT

14. 发明专利

JP2006128394A Magnetoresistance effect element 有权
标题翻译：磁阻效应元素
公开(公告)号：JP2006128394A
公开(公告)日：2006-05-18
申请号：JP2004314359
申请日：2004-10-28
申请人： Toshiba Corp , 株式会社東芝
发明人： KISHI TATSUYA , NAKAYAMA MASAHIKO , FUKUZUMI YOSHIAKI , KAI TADASHI
IPC分类号： H01L43/08 , H01F10/16 , H01F10/26 , H01L21/8246 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To prevent the erroneous writing of a semi-selective cell and reduce a switching magnetic field.
SOLUTION: The magnetoresistance effect element has a laminated structure that comprises first and second ferromagnetic layers, and a nonmagnetic layer disposed between the ferromagnetic layers. At least one of the first and second ferromagnetic layers is constituted of a first part having a magnetic anisotropy in a first direction, and a second part that is connected to the first part and has a magnetic anisotropy in a third direction different from the first direction and a second direction which is reverse to the first direction.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了防止半选择性单元的错误写入并减少开关磁场。解决方案：磁阻效应元件具有包括第一和第二铁磁层的层压结构，以及设置在铁磁层之间的非磁性层。第一和第二铁磁层中的至少一个由在第一方向上具有磁各向异性的第一部分和与第一部分连接并且在与第一方向不同的第三方向上具有磁各向异性的第二部分和与第一方向相反的第二方向。版权所有（C）2006，JPO＆NCIPI

15. 发明专利

JP2006108565A Magnetoresistive effect element and magnetic storage device 审中-公开
标题翻译：磁电效应元件和磁存储器件
公开(公告)号：JP2006108565A
公开(公告)日：2006-04-20
申请号：JP2004296456
申请日：2004-10-08
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKAYAMA MASAHIKO , KAI TADASHI , KISHI TATSUYA , FUKUZUMI YOSHIAKI , NAGASE TOSHIHIKO
IPC分类号： H01L43/08 , G11C11/15 , H01L21/8246 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To reduce erroneous writing and improve thermal stability.
SOLUTION: This magnetoresistive effect element 10 comprises a fixing layer 11 fixed in its direction of magnetization, a recording layer 13 variable in its direction of magnetization, and a non-magnetic layer 12 provided between the fixing layer 11 and the recording layer 13. The thickness T of the recording layer 13 is 5 nm to 20 nm, and the recording layer 13 includes an extending part 10a extended in a first direction, and a projected part 10b projected in a second direction perpendicular to the first direction from the side surface of the extending part 10a. When a maximum length in the first direction of the recording layer 13 is specified as a first length L and a maximum length in the second direction of the recording layer 13 is specified as a second length W, a ratio of the first length L and the second length W is 1.5 to 2.2.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：减少写入错误并提高热稳定性。解决方案：该磁阻效应元件10包括沿其磁化方向固定的固定层11，沿其磁化方向可变的记录层13和设置在固定层11和记录层之间的非磁性层12 记录层13的厚度T为5nm至20nm，记录层13包括沿第一方向延伸的延伸部分10a和从第一方向垂直于第一方向的第二方向突出的突出部分10b 延伸部10a的侧面。当将记录层13的第一方向上的最大长度指定为第一长度L，将记录层13的第二方向上的最大长度指定为第二长度W时，第一长度L和第二长度W为1.5〜2.2。版权所有（C）2006，JPO＆NCIPI

16. 发明专利

JP2005203535A Magnetic memory 审中-公开
标题翻译：磁记忆
公开(公告)号：JP2005203535A
公开(公告)日：2005-07-28
申请号：JP2004007773
申请日：2004-01-15
申请人： Toshiba Corp , 株式会社東芝
发明人： KISHI TATSUYA , YODA HIROAKI , UEDA TOMOMASA , AIKAWA HISANORI , ASAO YOSHIAKI , KAJIYAMA TAKESHI , MIYAMOTO JUNICHI
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To reduce a write current and to ensure resistance to heat disturbance.
SOLUTION: This magnetic memory comprises a magnetic resistance effect element 6 having a magnetization secured layer composed of a magnetic layer securing a direction of magnetization, a record layer composed of the magnetic layer varying the direction of magnetization, and an unmagnetized layer provided between the magnetization secured layer and the record layer; a write wiring in which an induced magnetic field caused by a current is generated, and the direction of magnetization of the record layer is reversible by the induced magnetic field; a yoke 4 which covers a write wiring, and comprises a gap 5 having a substantially same width as a width of the magnetic resistance effect element on an opposed side of the magnetic resistance effect element; and a read wiring connected electrically to one end of the magnetic resistance effect element. The width of the gap is 0.2 times or less of the width of the write wiring.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：减少写入电流并确保抗热扰动。解决方案：该磁存储器包括磁阻效应元件6，该磁阻效应元件6具有由固定磁化方向的磁性层组成的磁化固定层，由磁化层组成的记录层改变磁化方向，以及提供非磁化层在磁化固定层和记录层之间; 产生由电流引起的感应磁场的写入布线，并且记录层的磁化方向由感应磁场可逆; 覆盖写入布线的磁轭4，并且包括在磁阻效应元件的相对侧具有与磁阻效应元件的宽度大致相同的宽度的间隙5; 以及与磁阻效应元件的一端电连接的读取布线。间隙的宽度是写入布线的宽度的0.2倍以下。版权所有（C）2005，JPO＆NCIPI

17. 发明专利

JP2005166896A Magnetic memory 审中-公开
标题翻译：磁记忆
公开(公告)号：JP2005166896A
公开(公告)日：2005-06-23
申请号：JP2003402891
申请日：2003-12-02
申请人： Toshiba Corp , 株式会社東芝
发明人： AIKAWA HISANORI , UEDA TOMOMASA , KISHI TATSUYA , KAJIYAMA TAKESHI , ASAO YOSHIAKI , YODA HIROAKI
IPC分类号： G11C11/22 , H01L21/8246 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To permit the elimination of variation in writing characteristics and the reduction of a writing current. SOLUTION: A magnetic memory is provided with a magnetic resistance effect element 6, having a magnetization fixed layer 6d wherein the direction of magnetization is fixed, a memory layer 6b whose direction of magnetization is variable and a tunnel barrier layer 6c provided between the magnetization fixed layer and the memory layer, and a first wiring layer 4 connected electrically to the magnetic resistance effect layer and extended into a direction orthogonal to the direction of easy magnetization axis of the memory layer. In this case, the end surface of the magnetic resistance effect element orthogonal to the direction of easy magnetization axis, and the end surface of the first wiring layer orthogonal to the direction of easy magnetization axis, are on the same plane. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了消除写入特性的变化和写入电流的降低。解决方案：磁存储器设置有磁阻效应元件6，其具有磁化方向固定的磁化固定层6d，磁化方向可变的存储层6b和设置在其间的隧道势垒层6c 磁化固定层和存储层，以及与磁阻效应层电连接并延伸到与存储层的容易磁化轴方向正交的方向的第一布线层4。在这种情况下，与易磁化轴方向正交的磁阻效应元件的端面和与易磁化轴方向正交的第一布线层的端面位于同一平面上。版权所有（C）2005，JPO＆NCIPI

18. 发明专利

JP2004179192A Magnetic random access memory 有权
公开(公告)号：JP2004179192A
公开(公告)日：2004-06-24
申请号：JP2002340043
申请日：2002-11-22
申请人： Toshiba Corp , 株式会社東芝
发明人： YODA HIROAKI , UEDA TOMOMASA , AIKAWA HISANORI , KAJIYAMA TAKESHI , KISHI TATSUYA , AMANO MINORU , ASAO YOSHIAKI , MIYAMOTO JUNICHI
IPC分类号： G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： G11C11/16
摘要： PROBLEM TO BE SOLVED: To realize high write efficiency and high write reproducibility.
SOLUTION: A write line 5 is covered with a yoke material 8. A recording layer 1A of an MTJ element 6 is to exchange coupled with the yoke material 8. The value of the total magnetic volume ΣMs
i *t
i of the recording layer 1A of the MTJ element 6 and the exchange coupling part of the yoke material 8 to the recording layer 1A is smaller than that of the magnetic volume ΣMs
i '*t
i ' of the other parts of the yoke material 8 covering the write line 5.
COPYRIGHT: (C)2004,JPO

19. 发明专利

JP2004152449A Magnetic memory 有权
公开(公告)号：JP2004152449A
公开(公告)日：2004-05-27
申请号：JP2002318958
申请日：2002-10-31
申请人： Toshiba Corp , 株式会社東芝
发明人： KISHI TATSUYA , KAI TADASHI , AMANO MINORU , SAITO YOSHIAKI
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To induce stable magnetization inversion even when a magnetic memory is highly integrated.
SOLUTION: The magnetic memory is provided with a memory cell which is provided with a magneto-resistive element having a memory layer whose magnetization direction is changed according to external magnetic fields and a magnetic field generating mechanism which generates magnetic fields and makes a first magnetic field having a first angle which is larger than 0 degree and smaller than 90 degrees on the basis of the magnetization direction of the memory layer act on the the memory layer and makes a second magnetic field having a second angle which is larger than the first angle act on the magnetic layer when the magnetization direction of the magneto-resistive element is reversed.
COPYRIGHT: (C)2004,JPO

20. 发明专利

JP2003309251A Magnetic random-access memory 审中-公开
标题翻译：磁性随机存取存储器
公开(公告)号：JP2003309251A
公开(公告)日：2003-10-31
申请号：JP2002116387
申请日：2002-04-18
申请人： Toshiba Corp , 株式会社東芝
发明人： ASAO YOSHIAKI , IWATA YOSHIHISA , SAITO YOSHIAKI , YODA HIROAKI , UEDA TOMOMASA , AMANO MINORU , TAKAHASHI SHIGEKI , KISHI TATSUYA
IPC分类号： H01L27/105 , H01L21/8246 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To efficiently make a write magnetic field act on a TMR element of an MRAM.
SOLUTION: A write work line 20B is arranged immediately below the TMR element 23. The write word line 20B is extended in an X-direction, and the lower surface thereof is covered by a yoke member 25B having high magnetic permeability. A data selection line (read/write bit line) 24 is arranged immediately above the TMR element 23. The data selection line 24 is extended in a Y- direction, intersecting with the X-direction, and the upper surface thereof is covered by another yoke member 27 having high magnetic permeability. A magnetic field generated by a write current, which flows through the write work line 20B and the data selection line 24 upon write operation, acts efficiently on the TMR element 23 by the yoke members 25B, 27.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：有效地使写入磁场作用在MRAM的TMR元件上。写入工作线20B布置在TMR元件23的正下方。写字线20B在X方向上延伸，并且其下表面被具有高磁导率的磁轭构件25B覆盖。数据选择线（读/写位线）24布置在TMR元件23的正上方。数据选择线24沿Y方向延伸，与X方向相交，其上表面被另一个覆盖轭构件27具有高磁导率。通过写入操作流过写入工作线20B和数据选择线24的写入电流产生的磁场通过磁轭部件25B，27有效地作用在TMR元件23上。（C） 2004年，JPO

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