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11. 发明专利

JPH1097960A SILICON CARBIDE DEPOSITED DUMMY WAFER 失效
公开(公告)号：JPH1097960A
公开(公告)日：1998-04-14
申请号：JP27151096
申请日：1996-09-19
申请人： TOYO TANSO CO
发明人： OKADA MASAKI , NOGAMI AKIRA , HIRANO HIROYUKI , IMAMURA KAZUHIRO , YOSHIMOTO YOSHIAKI , KIKU HIDEKI
IPC分类号： H01L21/205 , H01L21/02 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To suppress a semiconductor wafer from warping after being processed, by forming g a silicon carbide film by chemical vapor deposition on the surface of a high-purity Si substrate having almost the same shape and thickness as the wafer. SOLUTION: A single crystal Si wafer substrate 1 is laid on a single wafer processing silicon carbide covered graphite susceptor 2 in a quartz glass tube 6, the tube 6 is once evacuated, the susceptor 2 and substrate 1 are heated up to a specified temp. in an H atmosphere by the induction heat of an induction coil 9 and held for a specified time. With holding them at a specified temp. silane dichloride, H carrier gas and ethane dichloride gas are fed parallel to the substrate 1 from slits 7a of a gas feed pipe 7 set in the glass tube 6 held at a high pressure to react with each side for specified time.

12. 发明专利

JPH09249455A PRODUCTION OF SILICON CARBIDE COMPACT 失效
公开(公告)号：JPH09249455A
公开(公告)日：1997-09-22
申请号：JP5802896
申请日：1996-03-14
申请人： TOYO TANSO CO
发明人： NOGAMI AKIRA
IPC分类号： C04B41/87 , C04B35/565 , C04B35/573
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a silicon carbide compact, not causing crack or release in an adhesive layer even when carbon members are bonded to each other and converted to SiC and further SiC layer is formed by chemical deposition method. SOLUTION: This method for producing silicon carbide compact comprises bonding carbon members obtained by processing the carbon material with an adhesive, converting the carbon members to silicon carbide by a conversion method and forming a silicon carbide layer on the surface or surface layer by chemical deposition method. In the method, an adhesive obtained by dispersing carbonaceous particles having true density and >0.3356nm X ray parameter d (002) to a liquid thermosetting resin such as polyimide resin, polyamideimide resin or polycarbodiimide resin is used as the adhesive. Further, after the carbon member is converted to silicon carbide by a conversion method, silicon is impregnated into the converted member.

13. 发明专利

JPH08143385A CARBON MEMBER WITH COMBINED COATING FILM AND ITS PRODUCTION 失效
公开(公告)号：JPH08143385A
公开(公告)日：1996-06-04
申请号：JP30712794
申请日：1994-11-17
申请人： TOCALO CO LTD , TOYO TANSO CO
发明人： HARADA YOSHIO , TAKEUCHI JUNICHI , TOJO TETSURO , NOGAMI AKIRA
IPC分类号： C04B41/88 , C04B35/66 , C04B41/51 , C04B41/89 , C04B41/90 , C23C4/02 , C23C4/10
摘要： PURPOSE: To increase the bonding strength of a coating film and to obtain a carbon member with a combined coating films excellent in high-temp. oxidation resistance by depositing metal Cr on the surface of a carbon substrate and carrying out coating by thermal spraying with a metal, ceramics or cermet. CONSTITUTION: Reactive metal Cr is deposited in a vapor phase on the surface of a carbon substrate having 0.1-2.5μm average pore radius and 5-30% porosity of open pores by heat-treating the substrate at 600-1,2O0 deg.C for 1-20hr in gaseous chromium halide contg. gaseous hydrogen, the metal Cr is impregnated into the substrate through the open pares and the surface of the substrate is also coated with the metal Cr. The resultant reactive metal Cr layer is coated by thermal spraying with one or more selected from among a metal, ceramics and cermet to obtain the objective carbon member with a laminated coating film.

14. 发明专利

JPH10256108A SILICON CARBIDE DUMMY WAFER 失效
公开(公告)号：JPH10256108A
公开(公告)日：1998-09-25
申请号：JP6261497
申请日：1997-03-17
申请人： TOYO TANSO CO
发明人： OKADA MASAKI , NOGAMI AKIRA
IPC分类号： H01L21/205 , H01L21/02
摘要： PROBLEM TO BE SOLVED: To markedly reduce the contamination degree of a semiconductor than that of a Si dummy wafer at the semiconductor manufacturing process, by laminating a CVD-Si film and CVD-SiC film on the surface of a porous SiC substrate. SOLUTION: A graphite base is heated together with a silicic acid or one of C, Si or SiC added thereto to produce SiO gas which is brought into reaction with the graphite base to produce a porous SiC base 7. After adjusting the thickness of the base 7, a dry halogen gas is blown on the base 7 to remove mixed impurity metals, the CVD is applied to form a high-purity compact CVD-Si film 8, and a CVD-Si film 9 of specified thickness is formed by the usual CVD method on the film 8, thus greatly reducing the contamination degree of the semiconductor.

15. 发明专利

JPH07223895A HEAT SHIELD FOR DRAW-UP DEVICE FOR SILICON SINGLE CRYSTAL 失效
公开(公告)号：JPH07223895A
公开(公告)日：1995-08-22
申请号：JP5004894
申请日：1994-02-09
申请人： TOYO TANSO CO
发明人： OKADA MASAKI , NOGAMI AKIRA , TAGATA HIROKAZU
IPC分类号： C30B15/00 , C30B15/14 , C30B29/06
摘要： PURPOSE:To provide a long-life heat shield made of carbon, increased in capacity for absorption of silicon without reducing the function of the heat shield and free from cracking or swelling. CONSTITUTION:This heat shield is made of a carbon material having &40 vol% 3 overall porosity, 1.7 to 2.2 Mg/m true density measured by butanol immersion method and 0.10 to 0.35m /Mg volume of open pores of 0.01 to 50mum pore radius measured by the method of mercury penetration. Among them, in the case of the overall porosity , a heat shield made of a carbon material having 0.10 to 0.20 m /Mg volume of open pores of 0.01 to 50mum pore radius measured by the method of mercury penetration is especially preferable.

16. 发明专利

JPH01264969A BETA-SILICON CARBIDE MOLDING AND PRODUCTION THEREOF 失效
公开(公告)号：JPH01264969A
公开(公告)日：1989-10-23
申请号：JP7240888
申请日：1988-03-25
申请人： TOYO TANSO CO
发明人： NOGAMI AKIRA
IPC分类号： C04B35/565 , C01B31/36 , C04B35/573 , C04B41/87
摘要： PURPOSE:To improve purity and the workability of the SiC molding by introducing an Si source into a specific graphite-base material, heating the material and bringing the generated gaseous SiO into reaction with the graphite-base material. CONSTITUTION:The beta-SiC molding is obtd. by adding the mixture composed of 2-20kg silicic acid having bulk density, >=1.5mum average bore radius, >=25% porosity, >=20X10 /g total pore volume, and

17. 发明专利

JP2000160343A CORROSION RESISTANT CVD-SILICON CARBIDE AND CORROSION RESISTANT CVD-SILICON CARBIDE COATING MATERIAL 失效
公开(公告)号：JP2000160343A
公开(公告)日：2000-06-13
申请号：JP23660299
申请日：1999-08-24
申请人： TOYO TANSO CO
发明人： HIRANO HIROYUKI , NOGAMI AKIRA , FUJIWARA HIROKAZU
IPC分类号： H01L21/683 , C01B31/36 , C04B41/87 , C23C16/42 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To improve the etching resistance to various gases and corrosion resistance to various metals, in the crystals composing β-SiC formed by a CVD method, by specifying the ratio of the (111) plane to be occupied. SOLUTION: A graphite substrate is coated with SiC by a CVD method, next, graphite is mechanically or chemically removed to form into dense CVD- SiC only, by which β-SiC as cubic crystals is obtd. At this time, by controlling the substance temp. at the time of CVD treatment to about 1300 deg.C, desirably to about >=1400 deg.C and controlling the CVD treating conditions, in the crystals composing the surface of β-SiC, the ratio of the crystals showing the crystal orientation in the (111) plane to be occupied is controlled to

18. 发明专利

JPH11103106A REFLECTOR MIRROR FOR LASER 失效
公开(公告)号：JPH11103106A
公开(公告)日：1999-04-13
申请号：JP13451298
申请日：1998-04-27
申请人： YOSHIDA KUNIO , TOYO TANSO CO
发明人： YOSHIDA KUNIO , WATANABE YOSHIHIRO , NOGAMI AKIRA
IPC分类号： G02B5/08 , H01S3/04 , H01S3/08
摘要： PROBLEM TO BE SOLVED: To provide a reflector mirror having a high-reflective index and high- heat resistance reflective layer and durable against a high power laser oscillation beam by forming a precisely polished SiC film on the surface of an isotropic carbonaceous material. SOLUTION: The mirror base is made of a carbonaceous material esp. very high-isotropic graphite to ensure required characteristics and uniformity for a high power laser reflection mirror and has on the surface an SiC layer good in heat resistance from which a good mirror surface having approximately the same expansion coefficient as that of the graphite is easily obtained by polishing, without peeling. This SiC layer is precisely polished as required to obtain a high-precision reflective plane by repeating the SiC layer deposition and precise polishing steps, thus obtaining a defect-less good-reproducibility mirror surface. A heat-resistive dissimilar metal film may be formed on the SiC layer to obtain a high-reflective index mirror surface suited for various wavelength lights.

19. 发明专利

JPH10289882A WAFER PLACING VERTICAL BOAT 失效
公开(公告)号：JPH10289882A
公开(公告)日：1998-10-27
申请号：JP9693797
申请日：1997-04-15
申请人： TOYO TANSO CO
发明人： KIKU HIDEKI , NOGAMI AKIRA
IPC分类号： H01L21/683 , H01L21/22 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To markedly restrain particles from occurring and to reduce a wafer placing vertical boat in cost by a method wherein ring members are assembled to a support through the intermediary of spacers provided at a prescribed interval and freely fixed. SOLUTION: When a heat equalizing ring 8b identical to a heat equalizing ring 8a located just below it is fitted in three supports 5, 6, and 7 after a spacer 10b is fitted into the supports 5, 6, and 7 which extend upward penetrating the lowermost bottom base 3 of a ring boat 12, a second ring boat from bottom is secured. As mentioned above, a spacer 10 and a heat equalizing ring 8 just above the spacer 10 are combined in a pair, and pairs of the spacers 10 and the rings 8 are stacked up. Finally, fastening nuts 9 are put on the male screws of the supports 5, 6, and 7 and firmly tightened, whereby the heat equalizing rings 8 are arranged and fixed in a horizontal position at a prescribed pitch as sandwiched in between the bottom base 3 and an upper base 4. When the ring boat 12 is loaded into or unloaded from a thermal treatment section with an automatic loading device, the supports 5, 6, and 7 and the heat equalizing rings 8 are restrained from rubbing against each other even if the ring boat 12 shakes slightly.

20. 发明专利

JPH10182278A CRUCIBLE FOR PULLING SINGLE CRYSTAL 失效
公开(公告)号：JPH10182278A
公开(公告)日：1998-07-07
申请号：JP34682496
申请日：1996-12-26
申请人： TOYO TANSO CO
发明人： NOGAMI AKIRA
IPC分类号： C30B15/10 , C30B29/06 , H01L21/208
摘要： PROBLEM TO BE SOLVED: To obtain a crucible which prevents earlier run-out of the service life of a crucible made of graphite, etc., to support the crucible on the inner side and obviates the occurrence of the intrusion of impurities into the single crystal to be pulled up, etc., by accumulating the raw materials for the single crystal including a melt in contact with the inner side and including glassy carbon into at least part thereof. SOLUTION: The crucible 1 consisting of the glassy carbon consists of a straight cylindrical part 2 and a bottom 3 inclusive of a round part in the section shape of the crucible 1 and is formed to a specified thickness. A recess 5 is formed on the inner side of the crucible 1 and the silicon melt as a raw material melt or polycrystalline silicon before melting is accumulated into the recess 5 in the state of maintaining contact with the inner sides 2a, 3a. The crucible 1 contains the glassy carbon in at least part thereof. The glassy carbon forming the parts along at least the inside surfaces 2a, 3a has open porosity of

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