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11. 发明专利

JPH0456314A MANUFACTURE OF SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPH0456314A
公开(公告)日：1992-02-24
申请号：JP16798990
申请日：1990-06-26
申请人： TOSHIBA CORP , TOSHIBA MICRO ELECTRONICS
发明人： ISHIHARA KATSUNORI , MIKATA YUICHI , OKUMURA KATSUYA
IPC分类号： C23C16/44 , C23C16/452 , C23C16/455 , H01L21/205 , H01L21/22 , H01L21/223 , H01L21/31 , H01L21/3215 , H01L21/768
摘要： PURPOSE:To make it possible to equalize the thickness of a film, the concentration of impurities, attain high purity, and enhance manufacturing performance by decomposing independently raw gas and impurity gas in a reaction vessel at least by different means from each other when forming a semiconductor film, on which impurities are added, on a substrate. CONSTITUTION:After impurity gas is decomposed by changing the temperature or gas decomposition method in a different reaction vessel 15, the decomposed gas is introduced into a reaction vessel 1 where raw gas is decomposed. An impurity additive semiconductor film is formed on a substrate 2 under the condition on which the both gases are decomposed to a satisfactory extent. Or the raw gas is decomposed in the reaction vessel 1 and the semiconductor film is deposited and then the impurity gas is decomposed in the same reaction vessel 1 under the gas decomposition condition different from the raw gas; impurities are added to the deposited semiconductor film where the impurity added semiconductor film is formed on the substrate 2. The impurity gas is decomposed by based on at least one means selected from heating, plasma discharge, and optical excitation.

12. 发明专利

JP2000232170A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JP2000232170A
公开(公告)日：2000-08-22
申请号：JP3245999
申请日：1999-02-10
申请人： TOSHIBA MICRO ELECTRONICS , TOSHIBA CORP
发明人： FUNO SAKAE , ISHIHARA KATSUNORI , MATSUMOTO SHUJI
IPC分类号： H01L21/8247 , H01L21/265 , H01L21/283 , H01L21/318 , H01L27/115 , H01L29/78 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To form an oxy-nitride film which contains nitrogen at a high concentration, exhibits a barrier effect against the diffusion of impurities, and has a good electrical characteristic. SOLUTION: An oxy-nitride film 12 based on a thin SiN film 11 is formed in such a way that oxygen is introduced to the SiN film 11 formed by the CVD method by controlling the introducing depth, introducing direction, and concentration of the oxygen by performing ion implantation or plasma doping. Thereafter, the oxygen is diffused in the film 11 and, at the same time, recombined through heat treatment. Therefore, a semiconductor device which can realize such an oxy-nitride film 12 that contains nitrogen at a high concentration, exhibits a barrier effect against the diffusion of impurities (boron, phosphorus, and arsenic), and has good electrical characteristics and a method for manufacturing the device can be provided.

13. 发明专利

JPH045824A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH045824A
公开(公告)日：1992-01-09
申请号：JP10529990
申请日：1990-04-23
申请人： TOSHIBA CORP , TOSHIBA MICRO ELECTRONICS
发明人： MIKATA YUICHI , OKUMURA KATSUYA , ISHIHARA KATSUNORI
IPC分类号： H01L21/205 , H01L21/28 , H01L21/3205 , H01L21/3215
摘要： PURPOSE:To make an impurity concentration in the depth direction uniform by a method wherein a polycrystalline silicon film which does not contain any impurities is formed, inside a low-pressure CVD apparatus, on a substrate provided with an insulating film in which a contact hole or the like has been opened, impurities are adsorbed and diffused, this process is repeated and a film thickness is prescribed. CONSTITUTION:An insulating film 42 is formed on the surface of a P type Si substrate 41 or the like; As or the like is doped; an N region 40 is formed in the substrate 41; an opening is made in the film 42 corresponding to the region 40; a contact hole is formed. Then, a prescribed gas is pyrolyzed at a prescribed temperature and under a reaction pressure inside a low-pressure CVD apparatus, and a polycrystalline silicon film 43 is formed on the film 42 including the contact hole part. In succession, a prescribed gas is pyrolyzed, and the surface of the film 43 is covered uniformly with impurities such as phosphorus or the like. In succession, the same process is repeated; a polycrystalline silicon film 44 is formed; the process is repeated until a laminated polycrystalline silicon film 45 becomes a required film thickness. Then, an electrode extraction wire whose impurity concentration in the depth direction is uniform can be formed.

14. 发明专利

JPH01302747A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH01302747A
公开(公告)日：1989-12-06
申请号：JP9272488
申请日：1988-04-15
申请人： TOSHIBA CORP , TOSHIBA MICRO ELECTRONICS
发明人： MIKATA YUICHI , ISHIHARA KATSUNORI
IPC分类号： H01L21/8247 , H01L21/28 , H01L21/31 , H01L21/314 , H01L21/3205 , H01L21/336 , H01L23/52 , H01L29/78 , H01L29/788 , H01L29/792
摘要： PURPOSE:To improve the withstand voltage of an insulating film by a method wherein a non-single crystal silicon film is formed on the insulating film, while said silicon film is converted into a polycrystalline film by conducting annealing thereon, and a non-single crystal silicon film containing impurities is formed on the polycrystalline silicon film. CONSTITUTION:A first gate oxide film 2 is formed on the main surface of a silicon-substrate 1 by conducting thermal oxidization, and a non-single crystal silicon film 3 is formed by deposition by the oxide film 2. Crystal grains are generated and crystallized on the silicon film 3 by conducting an annealing treatment without exposing the substrate 1 to the ambient air. Said crystal becomes a polycrystalline-silicon film 3 by conducting a heat treatment in a furnace at 600 deg.C or higher. A phosforus-doped polycrystalline silicon film 4 is formed thereon without exposing the substrate 1 to the ambient air. The second gate oxide film 5 is formed by conducting thermal oxidization on the silicon film 4. A polycrystalline silicon film 6 is deposited on the oxide film 5. As a result, the withstand voltage of the oxide film 2 can be improved.

15. 发明专利

JPH10144610A SEMICONDUCTOR MANUFACTURING DEVICE 失效
公开(公告)号：JPH10144610A
公开(公告)日：1998-05-29
申请号：JP29353496
申请日：1996-11-06
申请人： TOSHIBA MICRO ELECTRONICS , TOSHIBA CORP
发明人： SAKURAI YOSHINOBU , ISHIHARA KATSUNORI , FUNO SAKAE
IPC分类号： C23C16/44 , C23C16/455 , C23C16/50 , H01L21/205 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To suppress variation in film thickness and sheet resistance of a CVD film by a method wherein an opening which has approximately the same shape as a semiconductor substrate placed on a susceptor is formed nearly directly above the susceptor in a hollow partition plate between a reactive gas supply outlet and the semiconductor substrate and the ejection outlets of diluting gas are provided on the side wall of the opening. SOLUTION: A substrate 2 is placed on a susceptor 3. After the inside of a reaction chamber 1 is evacuated, carrier gas and reactive gas are spouted from a reactive gas supply pipe 5A and diluting gas is ejected from diluting gas outlets 12. At that time, the exhaust gas is continuously exhausted from a reactive gas exhaust pipe 6A to keep the pressure in the reaction chamber 1 constant. After that, the susceptor 3 and the substrate 2 are heated by a heating mechanism 4 and a CVD treatment is applied to the surface of the substrate 2. At that time, the diluting gas is made to flow from the ejection outlets 12 on a partition plate 11 which is placed directly above the substrate 2 at a position corresponding nearly to the outer circumference of the substrate 2 to dilute the reactive gas near the substrate 2 locally and the flow rate of the reactive gas at that part is increased to increase the flow velocity. As a result, the increase of the film thickness and the increase of a sheet resistance on the circumferential part of the substrate 2 can be suppressed.

16. 发明专利

JPH06232159A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH06232159A
公开(公告)日：1994-08-19
申请号：JP1360093
申请日：1993-01-29
申请人： TOSHIBA CORP , TOSHIBA MICRO ELECTRONICS
发明人： ISHIHARA KATSUNORI , MIKATA YUICHI
IPC分类号： H01L27/11 , H01L21/336 , H01L21/8244 , H01L29/78 , H01L29/786 , H01L29/784
摘要： PURPOSE:To manufacture the field effect transistor with high positional precision giving no damage due to ion implantation to a silicon oxide film to be a gate insulating film by a method wherein the transistor is provided with the second non-single crystalline silicon film containing the first conductivity type impurity to be formed in contact with the first non-single crystalline silicon film. CONSTITUTION:A gate insulating film 14 is formed on the first conductivity type semiconductor substrate 10; the second conductivity type impurity diffused layer corresponding to the gate electrode is formed in the semiconductor substrate 10; the first non-single crystalline film 16 is formed on the insulating film 14; and then layer insulating film 17 is formed on the first non-single crystalline film 16. Next, contact holes 19 are formed by selectively removing the first non-crystalline silicon film 16 and the layer insulating film 17 using anisotropical etching step so that the second non-single crystalline silicon films 21 may be formed in the contact holes 19 while doping the contact holes 19 with the first conductivity type impurities.

17. 发明专利

JPH0594954A FORMING METHOD OF SEMICONDUCTOR FILM 失效
公开(公告)号：JPH0594954A
公开(公告)日：1993-04-16
申请号：JP25532891
申请日：1991-10-02
申请人： TOSHIBA CORP , TOSHIBA MICRO ELECTRONICS
发明人： ISHIHARA KATSUNORI , MIKATA YUICHI , MIYAZAKI SHINJI
IPC分类号： H01L21/20 , H01L21/205 , H01L21/336 , H01L29/78 , H01L29/786
摘要： PURPOSE:To provide a method of forming a semiconductor film which enables an element provided with an amorphous silicon film to be enhanced in characteristics by a method wherein the amorphous silicon film is subjected to a thermal treatment process and then enlarged in grain diameter when it is recrystallized. CONSTITUTION:When an amorphous silicon film is formed on an insulating film 12 provided onto a semiconductor wafer 10, a process where the semiconductor wafer 10 is inserted into the reaction tube of a reduced pressure type or a normal pressure type CVD device, the reaction tube is kept in a reduced pressure or a normal pressure state, and oxidizing gas is made to flow through the reaction tube to execute the oxygen purge of the surface of the wafer and another process where an amorphous silicon film is successively formed on the surface of the wafer by deposition in the above reaction tube are provided.

18. 发明专利

JP2000100809A FILM-FORMING METHOD 失效
公开(公告)号：JP2000100809A
公开(公告)日：2000-04-07
申请号：JP28201398
申请日：1998-09-17
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP , TOSHIBA MICRO ELECTRONICS
发明人： SHIOZAWA JUNICHI , FUNO SAKAE , ISHIHARA KATSUNORI , SAKURAI YOSHINOBU , TSUNASHIMA YOSHITAKA , SAIDA SHIGEHIKO , INUMIYA SEIJI , OZAWA YOSHIO , IKEGAWA HIROAKI , YONEKAWA TSUKASA , SAITO YUKIMASA
IPC分类号： H01L21/316 , C23C16/24 , C23C16/42 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To provide a film forming method for forming an insulating film made of layers continuously in the same film forming apparatus, and keeping good insulation in the insulating film, despite the film being thin. SOLUTION: In this film forming method, an insulating film made up of at least a silicon oxide film and a silicon nitride film is formed. The film forming method includes a silicon oxide film forming step for forming a silicon film by using SiCl4 gas which is included in part in a raw gas in a CVD method, a silicon nitride film forming step for forming a silicon nitride film by using an SiCl4 gas partly in a raw gas in a CVD method. These steps are carried out continuously in the same heat treating apparatus 2. Then, an insulating film made up of layers can be formed continuously in the same film forming apparatus, and moreover, insulating film with extremely satisfactory insulation can be obtained despite the film being thin.

19. 发明专利

JP2000091337A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JP2000091337A
公开(公告)日：2000-03-31
申请号：JP25547998
申请日：1998-09-09
申请人： TOSHIBA MICRO ELECTRONICS , TOSHIBA CORP
发明人： FUNO SAKAE , ISHIHARA KATSUNORI , INUMIYA SEIJI , OZAWA YOSHIO
IPC分类号： H01L21/31 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To eliminate a heat treatment conducted after forming a film and to reduce the number of processes, by forming an oxynitride film through a CVD method, using a mixed gas including three material gases of a silicon-based material gas or a silicon-based liquid source which includes no hydrogen, a silicon-based oxidizing material gas and a nitrogen monooxide gas. SOLUTION: A mixed gas supply system 16 supplies at least three kinds of film-forming gases. A supply source 16A supplies a silicon-based material gas or a silicon-based liquid source (SiCl4), including on hydrogen into a processing chamber 11, a supply source 16B supplies a silicon-based oxidizing material gas (N2O) which does not include hydrogen, and a supply source 16C supplies a nitrogen monooxide gas (NO) to form an oxynitride film by a CVD method. Accordingly, a bond related to hydrogen such as-H group,-OH group or the like or a bond related to hydrogen such as Si-H bond, Si-OH bond, N-H bond or the like is not substantially included by a film. This eliminates heat treatment process to remove a bond group after forming the film and hence enables reducing the number of manufacturing processes and to adopt process for producing low temperature.

20. 发明专利

JPH10335500A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH10335500A
公开(公告)日：1998-12-18
申请号：JP14784497
申请日：1997-06-05
申请人： TOSHIBA MICRO ELECTRONICS , TOSHIBA CORP
发明人： FUNO SAKAE , ISHIHARA KATSUNORI , TSUNODA HIROAKI , MIKATA YUICHI
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To improve yield and reliability, by easily rejecting the increase in the film thickness of a CVD oxide film that becomes a gate insulation film, suppressing the deterioration, and scattering in the characteristics of each cell transistor. SOLUTION: A method for manufacturing a semiconductor device contains a method for forming a CVD oxide film 24 on a polycrystalline silicon layer 23a by the CVD method for a semiconductor substrate with the polycrystalline silicon layer 23a on a surface and a process for forming oxidation resistance layers 24x and 24y simultaneously for both the surface of the CVD oxide film, and the interface between the CVD oxide film and the polycrystalline silicon layer.

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