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11. 发明专利

JPH0357456B2 失效
公开(公告)号：JPH0357456B2
公开(公告)日：1991-09-02
申请号：JP17789480
申请日：1980-12-16
申请人： SEIKO EPSON CORP
发明人： KURIHARA HAJIME
IPC分类号： H01L45/00 , G02F1/136 , G02F1/1365 , H01L29/86 , H01L29/861 , H01L29/864 , H01L29/866 , H01L49/00

12. 发明专利

JPH01281462A IMAGE FORMING DEVICE 失效
公开(公告)号：JPH01281462A
公开(公告)日：1989-11-13
申请号：JP11192388
申请日：1988-05-09
申请人： SEIKO EPSON CORP
发明人： KURIHARA HAJIME , SHIMURA EIJI
IPC分类号： B41J2/385 , G03G15/00 , G03G15/05
摘要： PURPOSE:To eliminate the need of electrostatically charging and image exposing and forming processes and to make the title device smaller in size and lower in cost by making an image forming member interpose between a member for supporting conductive powder and an electrode head divided into plural and impressing a voltage corresponding to an image. CONSTITUTION:By impressing the specified voltage between the conductive powder 1 and the electrode head 8 divided into the plural, charges are injected into the conductive powder 1 from the member for supporting the conductive powder 1. At the same time, the opposite charges are injected into the image forming member 5 from the electrode head 8 corresponding to respective picture elements or the image forming member 5 is made to generate spontaneous polarization. The conductive powder 1 is thus held on the image forming member 5 with an electrostatic force to form a desirable image (character, picture and dotted picture, etc.). After forming the desirable image, the image is transferred on other image forming member (fine-quality paper, middle-quality paper, low-ranking paper and OHP paper, etc.) by using at least one force out of heat, pressure, magnetic force and electric force. Thus, the device can be made smaller in size and lower in cost.

13. 发明专利

JPS62219963A SOLID-STATE IMAGE PICKUP DEVICE 失效
公开(公告)号：JPS62219963A
公开(公告)日：1987-09-28
申请号：JP6327586
申请日：1986-03-20
申请人： SEIKO EPSON CORP
发明人： OKA HIDEAKI , KURIHARA HAJIME , TAKESHITA TETSUYOSHI , TAKENAKA SATOSHI , HASEGAWA KAZUMASA , MATSUO SHUICHI , KUNII MASABUMI , MACHIDA YOSHIHIKO
IPC分类号： H01L27/14 , H01L27/146 , H04N5/335 , H04N5/369
摘要： PURPOSE:To facilitate manufacturing a solid-state image pickup device which provides excellent reliabilities such as moisture resistant properties, environmental resistant properties and chemical resistant properties with high yield by a method wherein a passivation structure which is composed of laminated 1st layer made of inorganic insulating material, 2nd layer made of organic insulating material and 3rd layer made of inorganic insulating material is employed. CONSTITUTION:After a driving circuit composed of a TFT 202 is formed on an insulating transparent substrate 201 and a layer insulating film 203 is formed, a transparent lower electrode 204 and a photoconductive layer 205 are formed and a contact hole 206 is drilled in the layer insulating film 203 and an upper electrode and a wiring 207 are formed with the same material. Then, 1st passivation layer 208 made of inorganic insulating material is formed by a method such as sputtering, 2nd passivation layer 209 made of organic insulating material such as polyimide system resin, polyamide system resin or silicone system resin is applied by a method such as spin-coating and 3rd passivation layer 210 made of inorganic insulating material is formed by a method such as plasma CVD. Then a hole 211 for wire bonding is drilled in the passivation layers 208-210.

14. 发明专利

JPS62196979A SOLID-STATE IMAGE PICKUP DEVICE 失效
公开(公告)号：JPS62196979A
公开(公告)日：1987-08-31
申请号：JP3972986
申请日：1986-02-25
申请人： SEIKO EPSON CORP
发明人： MATSUO SHUICHI , KURIHARA HAJIME , TAKESHITA TETSUYOSHI , TAKENAKA SATOSHI , OKA HIDEAKI , HASEGAWA KAZUMASA , KUNII MASABUMI
IPC分类号： H01L21/52 , H01L21/58 , H01L27/14 , H01L27/146 , H04N5/335
摘要： PURPOSE:To obtain picture information having high resolution and reduced noises by providing a guide line to fix a solid-state image pickup element at a fixed position on a packing substrate and also using a material serving as a light absorbing layer for said guide line to avoid a case where the light is made incident on a photodetecting element due to diffused reflection of the light produced at the chip end of said image pickup element. CONSTITUTION:A solid-state image pickup element 11 is fixed at a fixed position on a transparent packing substrate 15 with high accuracy by means of a guide plate 14. Here the plate 14 is made of a material that can serve as a light absorbing layer. Thus it is possible to avoid formation of a diffused reflection surface on the chip end face of the element 11. The plate 14 uses a glass plate obtained by laminating a silicone resin plate and a light absorbing layer of amorphous resin, etc. Furthermore, a guide plate 23 is provided on a transparent packing substrate 24. Thus the chips of plural solid-state image pickup elements 21 can be set on a straight line with high accuracy.

15. 发明专利

JPS62186650A SOLID-STATE IMAGE PICKUP DEVICE 失效
公开(公告)号：JPS62186650A
公开(公告)日：1987-08-15
申请号：JP2853586
申请日：1986-02-12
申请人： SEIKO EPSON CORP
发明人： KURIHARA HAJIME , TAKESHITA TETSUYOSHI , TAKENAKA SATOSHI , OKA HIDEAKI , HASEGAWA KAZUMASA , MATSUO SHUICHI , KUNII MASABUMI , NAKAZAWA YOSHIO , MACHIDA YOSHIHIKO
IPC分类号： H01L27/146 , H01L27/14 , H04N1/028 , H04N5/335
摘要： PURPOSE:To obtain a solid-state image pickup element with no optical adjustment, very short optical path and low cost by sending optical information to the solid-state image pickup element through the optical guide path close to the solid-state image pickup element having photoelectric transducing elements arranged linearly. CONSTITUTION:The solid-state image pickup element 204 consists of photoelectric transducing elements 203 arranged linearly and the optical guide path 202 close to the element 204. In case an original 201 is white, in the light transmitting through the original from a light source 200, only the light through the white light transmitting part of the optical guide path 202 reaches the elements 203. In case an original 201' is black, the light attenuated by an black original reaches the element 203 through the optical guide path 202 to read the original. In this case, the light transmitting part of the optical guide path 202 has the area of the elements 203 or below to prevent the leakage of the light of adjacent photoelectric transducing elements thereby preventing the deterioration in the resolution. Further, the optical guide path 202 consists of the white light transmitting part and the light untransmitting part shown in hatched lines.

16. 发明专利

JPS61234562A SOLID-STATE IMAGE PICK-UP DEVICE 失效
公开(公告)号：JPS61234562A
公开(公告)日：1986-10-18
申请号：JP7705585
申请日：1985-04-11
申请人： SEIKO EPSON CORP
发明人： TAKESHITA TETSUYOSHI , KURIHARA HAJIME , TAKENAKA SATOSHI , HASEGAWA KAZUMASA , OKA HIDEAKI , MATSUO SHUICHI , KUNII MASABUMI
IPC分类号： H01L27/146 , H01L27/14 , H04N1/028
摘要： PURPOSE:To improve chip arranging accuracy and to provide high resolution (8-16 dots/mm), by forming a connecting surface and a cutting part by a connecting part. CONSTITUTION:From an intersecting line with an element surface 16, in which a light receiving element 17 is formed, within a connecting surface 14, where chips face to each other, a part, whose length is 10mum or more, is made to remain. The connecting surface at the other part is cut out to the depth of 1mum or more. For example, in the case of 16 dots/mm, the distance from the center of the element to the connecting surface is about 30mum. When the width of the element is 50mum, the distance from the end of the light receiving element 17 to the connecting surface 14 is about 5mum. The connecting surface 14 must be brought to the close proximity of the connecting surface of the facing chip is submicron order. Therefore, a cutting part 13 is cut out of the connecting part of each chip, and the above-described requirement is satisfied.

17. 发明专利

JPS61231759A SOLID-STATE IMAGE PICKUP DEVICE 失效
公开(公告)号：JPS61231759A
公开(公告)日：1986-10-16
申请号：JP7370485
申请日：1985-04-08
申请人： SEIKO EPSON CORP
发明人： HASEGAWA KAZUMASA , KURIHARA HAJIME , TAKESHITA TETSUYOSHI , TAKENAKA SATOSHI , OKA HIDEAKI , KUNII MASABUMI , MATSUO SHUICHI
IPC分类号： H01L27/146 , H01L27/14 , H04N5/335 , H04N5/341 , H04N5/365 , H04N5/374
摘要： PURPOSE:To eliminate an output signal containing switching noise by a method wherein the titled device is constituted of photoelectric conversion elements and driving circuits which drive those photoelectric conversion elements and a bit in which the photoelectric conversion element is not provided is provided at the first stage. CONSTITUTION:With some signal processing methods, sometimes signals like different data are detected from the first stage and the final stage by the influence of switching noises. Therefore, these switching noises are shifted by 1 stage respectively. As shown in an output signal 608, on the times (t2) and (t3), switching noises of analog switches 501 and 112 and switching noises of analog switches 116 and 502 cancel each other so that no noise component is detected in an output signal. Therefore, the switching noise component is eliminated from one bit before and one bit after the output signal waveform and the signals like different data are not detected after signal processing.

18. 发明专利

JPS61142769A Solid state image pickup device 失效
标题翻译：固态图像拾取器件
公开(公告)号：JPS61142769A
公开(公告)日：1986-06-30
申请号：JP26564484
申请日：1984-12-17
申请人： Seiko Epson Corp
发明人： TAKESHITA TETSUYOSHI , KURIHARA HAJIME , OKA HIDEAKI , HASEGAWA KAZUMASA
IPC分类号： H01L27/146 , H04N1/028 , H04N5/335 , H04N5/359 , H04N5/374
CPC分类号： H01L27/14665
摘要： PURPOSE:To obtain a solid-state image pickup device having a large S/N ratio and a large amount of saturated light without reducing a light receiving area, by laminating an additional capacitor part at the lower part of a thin film light receiving element. CONSTITUTION:On an insulating substrate 101, the following parts are formed by ordinary forming method of a polycrystalline silicon TFT: a non-doped polycrystalline Si layer 102, a gate electrode 103, source and drain electrodes, an interlayer insulating film 104, a vertical line 105 and an interlayer insulating film 106. A contact hole is formed in the interlayer insulating film. A conducting thin film as an individual electrode 107 for forming an additional capacitor is formed. A dielectric thin film as an insulating film 108 or an oxide film, which is obtained by oxidizing the electrode 107, is formed. A common electrode 109 for a light receiving element is formed on the individual electrode 107 so as to hold said insulating film. The electrode 109 is commonly used as the common electrode for the additional capacitor. A light receiving thin film 10 is deposited. A contact hole and a transparent conducting thin film 111 are formed at the position of the individual electrode 107. An additional capacitor is provided at the lower part of the light receiving element in electrically parallel with the light receiving element.
摘要翻译：目的：通过在薄膜光接收元件的下部层叠附加的电容器部分，获得具有大S / N比和大量饱和光的固态摄像装置，而不会降低光接收面积。构成：在绝缘基板101上，通过多晶硅TFT的普通成形方法形成以下部件：非掺杂多晶硅层102，栅极103，源极和漏极，层间绝缘膜104，垂直线路105和层间绝缘膜106.在层间绝缘膜中形成接触孔。形成作为用于形成附加电容器的单独电极107的导电薄膜。形成通过氧化电极107而获得的绝缘膜108或氧化膜的电介质薄膜。在单独电极107上形成用于光接收元件的公共电极109，以便保持所述绝缘膜。电极109通常用作附加电容器的公共电极。沉积光接收薄膜10。在单独电极107的位置处形成接触孔和透明导电薄膜111.另外的电容器设置在光接收元件的下部，与光接收元件电并联。

19. 发明专利

JPS61141173A Solid state image pickup device and manufacture thereof 失效
标题翻译：固态图像拾取器件及其制造
公开(公告)号：JPS61141173A
公开(公告)日：1986-06-28
申请号：JP26336584
申请日：1984-12-13
申请人： Seiko Epson Corp
发明人： KURIHARA HAJIME , TAKENAKA SATOSHI , OKA HIDEAKI , TAKESHITA TETSUYOSHI , HASEGAWA KAZUMASA , KUNII MASABUMI
IPC分类号： H01L27/146 , H01L31/0224
CPC分类号： H01L31/0224 , H01L27/14665
摘要： PURPOSE:To improve the yield by means of preventing disconnection from metallic wiring from occurring by a method wherein a metallic oxide film is formed on a metallic wiring of a driving circuit. CONSTITUTION:A resist 20 is provided on a sensor lower electrode 16 and then a substrate 11 is heated to supply the surface with steam oxidizing the metallic wiring 16 to form a metallic oxide film layer 19. Through these procedures, any disconnection from metallic wiring 16 due to etchant such as ITO etc. may be prevented from occurring to improve the yield.
摘要翻译：目的：通过在驱动电路的金属布线上形成金属氧化物膜的方法，通过防止与金属布线断开而提高产量。构成：在传感器下电极16上设置抗蚀剂20，然后加热基板11，使表面向氧化金属布线16的蒸气供给表面，形成金属氧化物膜层19.通过这些步骤，与金属布线16断开可以防止由于诸如ITO等的蚀刻剂而发生，以提高产率。

20. 发明专利

JPS61108165A Solid-state image pickup sensor 失效
标题翻译：固态图像拾取传感器
公开(公告)号：JPS61108165A
公开(公告)日：1986-05-26
申请号：JP23094984
申请日：1984-11-01
申请人： Seiko Epson Corp
发明人： OKA HIDEAKI , TAKESHITA TETSUYOSHI , KURIHARA HAJIME
IPC分类号： H01L27/14 , H01L27/146 , H01L31/0248 , H01L31/09 , H01L31/10 , H04N5/335 , H04N5/361 , H04N5/369
CPC分类号： H01L27/14665 , H01L31/095
摘要： PURPOSE:To obtain a light current close to a theoritical value even at a low voltage with a dark current being suppressed to a low level, by laminating a plurality of specified amorphous semiconductor layers on an amorphous semiconductor layer including silicon, and mixing an adequate amount of impurities in said layers. CONSTITUTION:On a transparent electrode 11, the following layers are laminat ed: an amorphous semiconductor layer 12 inclusing silicon; an amorphous semi conductor layer 13, which includes at least one element among carbon, oxygen and nitrogen, in addition to silicon; an amorphous semiconductor layer 14 includ ing silicon and corbon; and an amorphous semiconductor layer 15. An adequate amount of impurities such as elements in the II-b group or the V-b group in the element periodic table and oxygen in the layers 14 and 15. Thus injection of holes from an electrode 16 is prevented, and a dark current can be suppressed. Even if a voltage, which is applied to a sensor is low, a light current to a theroritical value can be obtained. The above described characteristics can be obtained with good reproducibility without depending on the material quality of the electrode.
摘要翻译：目的：即使在暗电流被抑制到低电平的情况下，即使在低电压下也能获得接近正常值的光电流，通过在包括硅的非晶半导体层上层叠多个指定的非晶半导体层，并将足量的的所述层中的杂质。构成：在透明电极11上，层叠以下层：包含硅的非晶半导体层12; 除了硅之外，还包括碳，氧和氮中的至少一种元素的无定形半导体层13; 包括硅和金属的非晶半导体层14; 和非晶半导体层15.适当量的诸如元素周期表II-b族中的元素或元素周期表中的Vb基的元素以及层14和15中的氧。因此，防止了从电极16注入空穴，并且可以抑制暗电流。即使施加到传感器的电压低，也可以获得达到临界值的光电流。可以在不依赖于电极的材料质量的情况下以良好的再现性获得上述特征。

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