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11. 发明专利

JP2009158108A Field emission electron source, and manufacturing method thereof 审中-公开
标题翻译：场发射电子源及其制造方法
公开(公告)号：JP2009158108A
公开(公告)日：2009-07-16
申请号：JP2007331451
申请日：2007-12-25
申请人： Panasonic Electric Works Co Ltd , パナソニック電工株式会社
发明人： HATAI TAKASHI , ICHIHARA TSUTOMU
IPC分类号： H01J1/312 , H01J9/02
摘要： PROBLEM TO BE SOLVED: To provide a field emission electron source capable of improving the electron emission characteristics, and to provide a manufacturing method thereof. SOLUTION: A field emission electron source 10 ((f) in Fig.1) includes a silicon substrate (semiconductor substrate) 1, a strong-field drift region 3 formed on a side of one of the surfaces of the silicon substrate 1, a lower electrode 2 formed on a side of other surface of the silicon substrate 1, and a surface electrode 4 formed on the strong-field drift region 3. The strong-field drift region 3 has a plurality of protrusions 31 formed at preset intervals of nanometers by etching the one of surfaces of the silicon substrate 1, lots of silicon micro-crystals (semiconductor micro-crystals) 33 of nanometers formed on the surface of each protrusion 31, and a silicon oxide film (insulating film) 34 formed on the surface of each silicon micro-crystal 33 and having a thickness smaller than the grain size of the silicon micro-crystal 33. Silicon micro-crystals 33 whose surface is covered with a silicon oxide film 34 are formed continuously along the surface of each protrusion 31. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供能够提高电子发射特性的场发射电子源，并提供其制造方法。解决方案：场致发射电子源10（图1（f））包括硅衬底（半导体衬底）1，形成在硅衬底的一个表面侧的强场漂移区3 如图1所示，形成在硅衬底1的另一表面侧的下电极2和形成在强场漂移区3上的表面电极4。强场漂移区3具有多个形成在预定位置的突起31 通过蚀刻硅衬底1的表面之一的纳米的间隔，形成在每个突起31的表面上的许多纳米的硅微晶（半导体微晶）33和形成的氧化硅膜（绝缘膜）34 在每个硅微晶体33的表面上并且具有比硅微晶体33的晶粒尺寸小的厚度。表面被氧化硅膜34覆盖的硅微晶体33沿着每个硅表面连续地形成突起31. COPYRI GHT：（C）2009，JPO＆INPIT

12. 发明专利

JP2009155676A Manufacturing method of periodical nanostructure, field emission electron source, and its manufacturing method 有权
标题翻译：周期性纳米结构的制造方法，场发射电子源及其制造方法
公开(公告)号：JP2009155676A
公开(公告)日：2009-07-16
申请号：JP2007332872
申请日：2007-12-25
申请人： Panasonic Electric Works Co Ltd , パナソニック電工株式会社
发明人： HATAI TAKASHI , ICHIHARA TSUTOMU
IPC分类号： C25D11/32 , H01J1/312 , H01J9/02
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method capable of easily manufacturing a periodical nanostructure in which a large number of semiconductor microcrystals of the order of nanometer are formed to range in the thickness direction of a semiconductor substrate and the semiconductor microcrystals are periodically formed in plane of the semiconductor substrate; to provide a field emission electron source capable of improving an electron emission characteristic; and to provide a manufacturing method of the field emission electron source. SOLUTION: The periodical nanostructure is manufactured through: a process of forming a lower electrode 2 on the silicon substrate (semiconductor substrate) 1; a process of forming a plurality of vertical holes 31 periodically arranged on one surface of the silicon substrate 1 according to anodization; and a process of forming silicon microcrystals (semiconductor microcrystals) 33 which range in the thickness direction of the silicon substrate 1 along inner circumferential surfaces of the vertical holes 31 according to anodization. Further, the field emission electron source 10 is manufactured through: a process of forming a silicon oxide film (insulation film) 34 on each surface of respective silicon microcrystals 33 to form a strong field drift part 3; and a process of forming a surface electrode 4 on the strong field drift part 3. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决问题的方案为了提供能够容易地制造周期性纳米结构的制造方法，其中在半导体衬底和半导体微晶的厚度方向上形成大量纳米级的半导体微晶的范围是周期性地形成在半导体衬底的平面中; 以提供能够改善电子发射特性的场致发射电子源; 并提供场致发射电子源的制造方法。解决方案：周期性纳米结构通过以下方式制造：在硅衬底（半导体衬底）1上形成下电极2的工艺; 根据阳极氧化法，在硅衬底1的一个表面周期性地形成多个垂直孔31的工艺; 以及根据阳极氧化在垂直孔31的内周面形成硅基板1的厚度方向的硅微晶（半导体微晶）33的工序。此外，场发射电子源10通过以下方式制造：在各硅微晶33的各表面上形成氧化硅膜（绝缘膜）34的工序，形成强场漂移部3; 以及在强场漂移部分3上形成表面电极4的工艺。版权所有（C）2009，JPO＆INPIT

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