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11. 发明专利

JPS5596658A SEMICONDUCTOR CONTAINER 失效
公开(公告)号：JPS5596658A
公开(公告)日：1980-07-23
申请号：JP513279
申请日：1979-01-19
申请人： NIPPON ELECTRIC CO
发明人： NAKASHIMA MASATO
IPC分类号： H01L23/32 , H01L23/00
摘要： PURPOSE:To accurately provide a chip carrying position in a semiconductor container by providing a positioning mark for carrying the chip while positioning a semiconductor chip at the terminal and the center in a container of laminated ceramic structure for containing the chip. CONSTITUTION:Upper, middle and lower ceramic layers 12, 11, 10 are formed at a container for containing a semiconductor chip. A metallized layer is coated on the surface of the layer 10, and etched to thereby form a chip carrying pattern 15. Simultaneously, positioning mark 16 disposed at the center and standard positioning marks 17 disposed at four corners are provided by utilizing the other portion of the metallized layer. A metal pattern 13 connected to the electrode pads of the chip is extended through the external wall of the layer 10 to the bottom surface on the surface of the farme of the layer 11 having an opening. Then, the layer 12 having an opening is placed on the layer 11. After the chip is contained in the container, the container is coated with mask sheet, and the pattern 13 is connected to external lead terminal 14. In this construction, cut-off portion 18 is formed at the outer peripheral corner between the layers 12 and 11 to see the mark 16.

12. 发明专利

JPS54141596A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS54141596A
公开(公告)日：1979-11-02
申请号：JP5031578
申请日：1978-04-26
申请人： NIPPON ELECTRIC CO
发明人： NAKASHIMA MASATO
IPC分类号： H01L29/73 , H01L21/331 , H01L29/06 , H01L29/861 , H01L29/866 , H01L31/10 , H01L31/107
摘要： PURPOSE:To improve dielectric strength by providing an operation region of opposite conductivity type within a semiconductor substrate of one conductivity type, encircling the outer side thereof with a first guard ring of the same conductivity type and a low impurity concentration and further encircling this with a second guard ring of the same conductivity type as that of the substrate and a low concentration. CONSTITUTION:A pi type first epitaxial layer 2 of an extremely low impurity concentration and a P type second epitaxial layer 3 of an impurity concentration slightly higher than this are epitaxially grown in lamination on a P type Si substrate 1. Next, an N type operating region 4 is diffusion formed in the layer 3 to grow a PN junction between these. Thereafter an N type first guard ring 5 is provided in contact with the surface region of the region 4 within the layer 3 and further a P type second guard ring 6 of a impurity concentration lower than that of the layer 3 is diffusion formed in contact with the outer side thereof. Next, a shallow P type channel stopper region 7 entering this ring 6 is provided on the outer side of this ring and the portions other than the region 4 are covered with a protecting film 8 such as SiO2.

13. 发明专利

JPS54101296A PHOTO SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS54101296A
公开(公告)日：1979-08-09
申请号：JP798278
申请日：1978-01-26
申请人： NIPPON ELECTRIC CO
发明人： NAKASHIMA MASATO , NOGUCHI SHIYOUZOU , FUKUI KIYOETSU , YONEZU HIROO , SHINOHARA YASUO
IPC分类号： H01L33/58 , H01L33/62 , H01L33/64 , H01S5/00
摘要： PURPOSE:To make easy the coupling with optical fiber and the detection of monitor light, by providing the center of the emitting window of main laser light and monitor light on one optical axis vertical to the bottom surface, and forming the cap bottom and the screw part cocentrically. CONSTITUTION:The screw 4 having the hollow part 3 is placed at the center of the bottom 1 made of kovar cocentrically with the bottom 1 with common center axis, and the hole 2 is made at the bottom 1 so that the center shaft is in agreement with the screw 4. The hole 10 is made at the center of the cap 9 so arranged that the it is in agreement with the center line 5, and the sapphire plate 11 optically polished for the both sides parallelly and smoothly is sealed with solder inside of it. The both laser lights of the main beam 14 and monitor 15 radiated from the laser crystal 13 are determined so that they are in agreement with the center line 5 for the direction and the size of heat sink 12 and radiator 6. The electrode of the crystal 13 is connected to the bottom 1 and the kovar made pole.

14. 发明专利

JPS53108454A LIGHT EMITTING DEVICE 失效
公开(公告)号：JPS53108454A
公开(公告)日：1978-09-21
申请号：JP2363677
申请日：1977-03-04
申请人： NIPPON ELECTRIC CO
发明人： NAKASHIMA MASATO
IPC分类号： G02B3/00 , G02B27/00 , H01S5/00
摘要： PURPOSE:To make it possible to improve the condensing characteristics of a reference light from a light emitting element of end face radiation type, which is mounted on a heat emitting body, by mounting a semi-cylindrical light collecting element on the upper surface of the heat emitting element at at least one side of the output surface of the light emitting element.

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