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    • 11. 发明专利
    • DEVICE FOR FORMING THIN FILM
    • JPH03264662A
    • 1991-11-25
    • JP6307290
    • 1990-03-13
    • MITSUBISHI ELECTRIC CORP
    • OHASHI SEIICHI
    • C23C14/32
    • PURPOSE:To prevent spitting due to the liquefaction of vapor in a nozzle by heating the vicinity of the nozzle fitted to a crucible to a temp. nearly equal to that of the body of the crucible when vapor of an evaporating substance is spouted from the nozzle. CONSTITUTION:A substrate 19 and a crucible 31 are set in a vacuum vessel 10, an evaporating substance 12 is charged into the crucible 31 and the body of the crucible 31 is heated with a filament 33. Vapor 15 of the evaporating substance 12 is spouted from a nozzle 31a fitted to the crucible 31 and a thin film 20 is formed on the surface of the substrate 19. At this time, the filament 33 is structured so that the lid of the crucible 31 receives a larger number of collided electrons than the body and the vicinity of the nozzle 31a is heated to a temp. nearly equal to that of the body. Since the vapor 15 generated from the crucible 31 does not liquefy in the nozzle 31a, spitting can be prevented.
    • 12. 发明专利
    • THIN FILM FORMING DEVICE
    • JPH02247377A
    • 1990-10-03
    • JP6606689
    • 1989-03-20
    • MITSUBISHI ELECTRIC CORP
    • OHASHI SEIICHI
    • C23C14/32C23C14/56
    • PURPOSE:To prevent damage of a base plate and to enable the device to cope with mass production of a formed film by carrying the base plate transferred to a single article cassette from the base plate cassettes into/from a vapor deposition chamber while intactly housing the base plate on the single article cassette and performing vapor deposition. CONSTITUTION:The base plate cassettes 9a, 9b and a single article cassette 11 are arranged in a base plate carrier chamber 15. One sheet of the base plate 1 is transferred at a time to the single article cassette 11 via a feeder 10 from the cassette 9a with a plurality of base plates 1 housed thereon. This base plate 1 is passed through a gate valve 8 via a feeder 7 and carried into a vapor deposition chamber 4 while intactly housing this base plate 1 on the single article cassette 11. Therein a vapor deposited film is formed on the surface of the base plate 1 by the vapor depositing ion beams supplied from the ICB sources 5 provided to the under part. The base plate 1 is taken out by the feeder 7 after the thin film has been formed. The base plate 1 is transferred on the cassette 9b from the single article cassette 11 via a discharger 14.