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11. 发明专利

JP2005091830A Method for treating optical waveguide 审中-公开
标题翻译：用于处理光波导的方法
公开(公告)号：JP2005091830A
公开(公告)日：2005-04-07
申请号：JP2003325809
申请日：2003-09-18
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： TANI YOSHIYUKI , HISAKADO TAKAO
IPC分类号： G02F1/1333 , B29B17/02
摘要： PROBLEM TO BE SOLVED: To solve a problem associated with recycling of an optical waveguide which generally comprises breaking acrylic resin as it is, which has been discharged from a factory subsequent to impurity removal, and pelletizing it so as to turn it into acrylic pellets, and in which an organic solvent is used to remove a dot pattern, bringing about troubles of costing treatment, of being limited to treatment in a factory equipped with a plant for waste liquid disposal and of possibly being a factor of environmental deterioration, possibly putting the cart before the horse, when recently frequent soil pollution due to an organic solvent is taken into consideration. SOLUTION: The method for treating the optical waveguide composed of a plate with a predetermined pattern imparted on the surface is characterized by identifying the method for forming the dot pattern on the optical waveguide and physically grinding only the optical waveguide of which the dot pattern is composed of a composition other than the acrylic resin only on the surface with the dot pattern so as to remove the pattern. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：解决与通常包括断开丙烯酸树脂一样的光波导的再循环的问题，其在除去杂质之后已经从工厂排出，并将其造粒成为丙烯酸类丸剂，其中使用有机溶剂去除点状图案，造成成本计算处理的麻烦，限于在装有废液处理设备的工厂中的处理以及可能是环境恶化的因素，可能把马车放在马前，最近频繁地考虑到有机溶剂造成的土壤污染。解决方案：用于处理由表面赋予预定图案的板构成的光波导的方法的特征在于，识别在光波导上形成点阵图案的方法，并仅物理研磨光波导，其中点图案仅由具有点图案的表面上的丙烯酸树脂以外的组合物构成，以便去除图案。版权所有（C）2005，JPO＆NCIPI

12. 发明专利

JP2005005029A Separation method and separation device for flat display device 审中-公开
标题翻译：用于平板显示装置的分离方法和分离装置
公开(公告)号：JP2005005029A
公开(公告)日：2005-01-06
申请号：JP2003164972
申请日：2003-06-10
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： TANI YOSHIYUKI , YOSHIDA HISAHIKO , NAGASHIMA TAKASHI , HISAKADO TAKAO
IPC分类号： H01J9/50
CPC分类号： Y02W30/828
摘要： PROBLEM TO BE SOLVED: To provide a method of simply separating a face plate, a rear plate and a chassis in a flat display device without impairing their shapes. SOLUTION: The separation processing method of the flat display device wherein a display panel 20 having a structure with a face plate 10 and a rear plate 12 airtightly jointed to each other by a sealing member 11 is connected to a chassis 14 through a jointing member 13, is characterized by cutting the jointing member 13 with a wire 30 with a high-hardness chip stuck. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种简单地在平面显示装置中分离面板，后板和底架而不损害它们的形状的方法。解决方案：平板显示装置的分离处理方法，其中具有通过密封构件11彼此气密地接合的面板10和后板12的结构的显示面板20通过一个接合构件13的特征在于用高硬度芯片卡住的线30切割接合构件13。版权所有（C）2005，JPO＆NCIPI

13. 发明专利

JP2004311680A Substrate heating method and its equipment 审中-公开
公开(公告)号：JP2004311680A
公开(公告)日：2004-11-04
申请号：JP2003102612
申请日：2003-04-07
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： TANI YOSHIYUKI , YOSHIDA HISAHIKO , HIRATA MASAHIKO
IPC分类号： H05K3/34
摘要： PROBLEM TO BE SOLVED: To reduce the size of the entire system, prevent a waste of energy and complicated change in setting accompanying a change in profile, and to eliminate variations among components, in substrate heating equipment.
SOLUTION: In this substrate heating method, a printed board mounted with electronic components is put in a heating furnace having such a temperature gradient that the temperature in an upper part may become higher in the vertical direction, and then the printed board is moved up and down to be heat-treated in a desired temperature profile.
COPYRIGHT: (C)2005,JPO&NCIPI

14. 发明专利

JP2001351844A ALIGNER AND EXPOSURE METHOD 失效
公开(公告)号：JP2001351844A
公开(公告)日：2001-12-21
申请号：JP2000168479
申请日：2000-06-06
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TANI YOSHIYUKI
IPC分类号： G03B27/72 , G03F7/20 , G03F9/02 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide an aligner and an exposure method for carrying out photolithography by practical throughput and small resolution. SOLUTION: A first exposure is carried out by setting a lens numerical aperture NA at 0.6 and a coherence factor σ at 0.3 with each structure of an illumination system, a lens system and a stage system fixed. Then, a lens numerical aperture NA is changed to 0.5 and a coherence factor σ is changed to 0.8 without changing an exposure position of an exposure object, and each structure of an illumination system, a lens system and a stage system is adjusted to minimize aberration under the conditions. Thereafter, second exposure is carried out with each structure of an illumination system, a lens system and a stage system fixed. Both high resolution and deep focus depth can be realized simultaneously while keeping practical throughput by carrying out correction of an illumination system, a lens system and a stage system to be optimum for each exposure condition by dividing exposure for each illumination condition.

15. 发明专利

JPH06216068A METHOD FOR FORMING PHOTORESIST PATTERN 失效
公开(公告)号：JPH06216068A
公开(公告)日：1994-08-05
申请号：JP2420793
申请日：1993-02-12
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： KOIZUMI TAICHI , TANI YOSHIYUKI
IPC分类号： G03F7/16 , G03F7/38 , H01L21/30
摘要： PURPOSE:To restrain a photoresist pattern from varying in line width due to a standing wave effect when the pattern is formed on a substrate such as a semiconductor wafer or the like. CONSTITUTION:Photoresist material is applied onto a substrate 1 such as a semiconductor wafer or the like to form a photoresist film 2, and a first light exposure process is carried out by the use of a prescribed light source and a mask 4. Then, the photoresist film 2 is thermally treated on a hot plate 6 to be reduced by a prescribed value in thickness. Thereafter, a second light exposure process is carried out by the use of the same light, source and the mask as the first process. At this point, the thickness change of the photoresist film is set so as to enable the nodes and antinodes of light standing waves generated at the first and the second light exposure process to deviate from each other in position. By this setup, a resist pattern can be lessened in dispersion of line width by a resultant effect of standing waves. Especially, when a photoresist film is changed in thickness by an odd-numbered times as much as 1/4 of the wavelength of a light source in the film, a resist pattern can be most lessened in dispersion of line width.

16. 发明专利

JPH03223859A FORMATION OF PATTERN 失效
公开(公告)号：JPH03223859A
公开(公告)日：1991-10-02
申请号：JP1953190
申请日：1990-01-30
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TANI YOSHIYUKI , SASAKO MASARU
IPC分类号： G03F7/039 , G03F7/26 , H01L21/027 , H01L21/30
摘要： PURPOSE:To form fine patterns having a good shape and high dimensional accuracy by using a resin which copolymerized a component having high heat resistance together with a functional group which is soluble in alkalis in an acid atmosphere as a pattern forming material. CONSTITUTION:A pattern forming material film 2 contg. the resin having the functional group which is soluble in the alkalis in the acid atmosphere and the component having the heat resistance, a photosensitive compd. which generates an acid by exposing, and a solvent which can dissolve the resin and compd. is formed on a substrate 1. The material film 2 is subjected to selective exposing with far UV rays, heat treatment and developing to form the material film patterns. Since the heat resistance of the resin itself is high, there is no softening of the resin at the time of the heat treatment and a large difference in solubility in an alkaline developing soln. arises between the exposed parts and the unexposed parts; in addition, the resin in the unexposed parts does not soften at the time of the heat treatment. The pattern 2a, 2a' of a positive type having a good contrast and the high dimensional accuracy are formed in this way.

17. 发明专利

JPH02101468A FINE PATTERN FORMING METHOD 失效
公开(公告)号：JPH02101468A
公开(公告)日：1990-04-13
申请号：JP25511788
申请日：1988-10-11
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： YAMASHITA KAZUHIRO , HIRAI YOSHIHIKO , SASAKO MASARU , TANI YOSHIYUKI
IPC分类号： G03F7/016 , G03F7/09 , G03F7/38 , H01L21/027
摘要： PURPOSE:To enable a pattern sufficient in resolution to be formed by using a resist higher in the concentration of a photosensitive group in the surface and lower in the lower part in the resist applied on one of the surfaces of a semiconductor wafer. CONSTITUTION:The diazo type photoresist 2 is applied to the semiconductor substrate 1 and the substrate 1 is baked (e) from the reverse side, preferably, at a temperature of >=90 deg.C, and cooled (d) by dry air, preferably, at a tempera ture of

18. 发明专利

JPS6473722A RESIST FILM FORMATION 失效
公开(公告)号：JPS6473722A
公开(公告)日：1989-03-20
申请号：JP23130687
申请日：1987-09-16
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TANI YOSHIYUKI , OGAWA KAZUFUMI
IPC分类号： H01L21/027 , G03C1/00 , G03F7/00 , G03F7/095 , G03F7/16 , H01L21/30
摘要： PURPOSE:To facilitate the pattern formation at the low energy level by a method wherein a filming process of resist to form a semiconductor element manufacturing positive pattern is divided into two phases wherein the resist in the low molecular weight level easily melted down or etched away is used for the lower layer while the resist in the normal molecular weight level is used for the upper layer. CONSTITUTION:In order to form a positive resist pattern, the resist to be formed is divided into an upper layer and a lower layer to be used. At this time, the resist in the molecular weight easily melted down or etched away is used for the lower layer while the resist in the normal molecular weight is used for the upper layer. In other words, the energy level suffices for cutting off the main chain of the upper layer resist part while the transfer to the lower layer is managed with development or etching process eliminating the pattern transfer to the lower layer by oxygen plasma despite the consequent use of the two layer resist. Therefore, the resist filming process can be simplified to form a fine pattern in a sharp contrast.

19. 发明专利

JPS63240543A PATTERN FORMING MATERIAL 失效
公开(公告)号：JPS63240543A
公开(公告)日：1988-10-06
申请号：JP7465187
申请日：1987-03-27
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TANI YOSHIYUKI , ENDO MASATAKA , OGAWA KAZUFUMI
IPC分类号： G03F7/016 , G03F7/038
摘要： PURPOSE:To evaporate away a solvent which hinders fine working by heating of a substrate without thermally decomposing a photoreactive reagent with a resist using the photoreactive reagent by previously including at least >=1 nitrogen atoms., for example, imide group or amide group in a polymer. CONSTITUTION:The compd. expressed by the formula I is used as the polymer. This material includes the imide group, has small absorption near excimer laser light (249nm) and improves the thermal stability of the compd. expressed by the formula II by interaction of the pi electrons of the nitrogen atoms. in the polymer and the compd. expressed by the formula II. The thermal decomposition of the photoreactive reagent by the heating of the substrate is thereby suppressed and the ultrafine resist pattern having good shapes is formed with good sensitivity by photoirradiation.

20. 发明专利

JP2008026211A Method and apparatus for discriminating component of plastic material 审中-公开
标题翻译：用于分辨塑料材料组分的方法和装置
公开(公告)号：JP2008026211A
公开(公告)日：2008-02-07
申请号：JP2006200556
申请日：2006-07-24
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： NAGASHIMA TAKASHI , TANI YOSHIYUKI , IRIE SHOICHI , YAMASHITA TAKEHIKO , IWATA YUKIHIRO
IPC分类号： G01N21/75 , G01N21/35
摘要： PROBLEM TO BE SOLVED: To provide a method for rapidly discriminating the content of the target detection component of a plastic material even if a very small amount of the target detection component is contained in the plastic material. SOLUTION: The first infrared absorption spectrum, which is obtained by irradiating the plastic material with infrared rays having a continuous spectrum and measuring the intensity of totally reflected or transmitted infrared rays, is compared with the second infrared absorption spectrum obtained by irradiating the plastic material with infrared rays having the continuous spectrum while or after processing for applying a change to the wave number inherent to the target detection component in the plastic material is performed and measuring totally reflected or transmitted infrared rays to recognize the presence of the content of the target detection component. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：即使在塑料材料中含有极少量的目标检测组分，也提供用于快速鉴别塑料材料的目标检测部件的含量的方法。解决方案：通过用具有连续光谱的红外线照射塑料并测量全反射或透射的红外线的强度获得的第一红外吸收光谱与通过照射所得到的第二红外吸收光谱进行比较执行具有连续光谱的具有连续光谱的红外线的塑料材料，或者在对塑料材料中的目标检测部件固有的波数进行改变的处理之后，测量全反射或透射的红外线，以识别出目标检测组件。版权所有（C）2008，JPO＆INPIT

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