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    • 12. 发明专利
    • Heat pipe device
    • 热管设备
    • JP2009145038A
    • 2009-07-02
    • JP2008268964
    • 2008-10-17
    • Denso CorpKyoto Univ国立大学法人京都大学株式会社デンソー
    • INOUE SEIJIOBARA KIMIKAZUSAKAKIBARA NOBUYOSHIHAGIWARA RIKANAKATA YOSHIHITO
    • F28D15/02
    • F28D15/0266F28F1/24
    • PROBLEM TO BE SOLVED: To provide a heat pipe device with a wide using temperature range.
      SOLUTION: An aqueous solution of an ionic liquid is used as a working medium 11 of the heat pipe device. The ionic liquid has a melting point of 0°C or less in a state of an aqueous solution. Cation constituting the ionic liquid is selected from dialkylimidazolium, alkylpyrdinium, tetraalkylammonium, tetraalkylphosphonium, trialkylsulfonium, N, N-dialkylpyrrolidinium, N, N-dialkylpiperidinium, and N, N-dialkylmorpholinium. An anion constituting the ionic liquid is selected from a halogen ion, SCN-, N(CN)
      2 -, (CF
      3 SO
      2 )
      2 N-, (C
      2 F
      5 SO
      2 )
      2 N-, CF
      3 SO
      3 -, (C
      2 F
      5 SO
      2 )
      3 C-, C
      2 H
      5 SO
      3 -, CH
      3 OSO
      3 -, C
      2 H
      5 OSO
      3 -, CH
      3 COO-, PF
      6 -, AsF
      6 -, ClO
      4 -, and BF
      4 -.
      COPYRIGHT: (C)2009,JPO&INPIT
    • 要解决的问题:提供具有宽的使用温度范围的热管装置。 解决方案:使用离子液体的水溶液作为热管装置的工作介质11。 离子液体在水溶液状态下的熔点为0℃以下。 构成离子液体的阳离子选自二烷基咪唑鎓,烷基吡啶鎓,四烷基铵,四烷基鏻,三烷基锍,N,N-二烷基吡咯烷鎓,N,N-二烷基哌啶鎓和N,N-二烷基吗啉鎓。 构成离子液体的阴离子选自卤素离子,SCN-,N(CN),SB(2),(CF 3 SB 3 SO 3) N 2,N 2,N 2,N 2,N 2,N 2, ,(CF 3),(C 2 SB 3),(C 3 SB 2) C 3,C 2,SB 3,SB 3,SO 3,SBO 3, 3,SB 3,SB 3,SB 3,SB 3,H 3,SB 3, ,PF 6,SBF,SBO,SBO,SBO,SBO,SBF,SBF。 版权所有(C)2009,JPO&INPIT
    • 16. 发明专利
    • Method for electrodepositing metal
    • 电沉积金属的方法
    • JP2007070698A
    • 2007-03-22
    • JP2005259827
    • 2005-09-07
    • Kyoto Univ国立大学法人京都大学
    • NOHIRA TOSHIYUKIHAGIWARA RIKASHIMANO JUN
    • C25D3/66
    • C25D3/66C25C3/00
    • PROBLEM TO BE SOLVED: To provide a method for electrodepositing various metals including a refractory metal and a rare earth metal using a molten salt.
      SOLUTION: The method for electrodepositing a metal uses a molten salt of a quaternary ammonium halide expressed by the general formula (I): Formula (I), (wherein R
      1 , R
      2 , R
      3 and R
      4 are each an alkyl group or a cycloalkyl group; and X represents a halide anion), and/or a molten salt of a pyrrolidinium halide expressed by the general formula (II): Formula (II), (wherein R
      5 and R
      6 are each an alkyl group or an cycloalkyl group; and X represents a halide anion), at 100°C to 200°C.
      COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:提供使用熔融盐电解沉积包括难熔金属和稀土金属的各种金属的方法。 电解沉积金属的方法使用由通式(I)表示的季铵盐的熔融盐:式(I),(其中R 1 ,R 2 ,R 3 和R 4 各自为烷基或环烷基; X表示卤素阴离子)和/或 由通式(II)表示的吡咯烷鎓卤化物:式(II),(其中R 6和R 6各自为烷基或环烷基; X 表示卤素阴离子),在100℃至200℃。 版权所有(C)2007,JPO&INPIT
    • 18. 发明专利
    • Method for producing metal by suspension electrolysis
    • 通过悬浮电解法生产金属的方法
    • JP2007016293A
    • 2007-01-25
    • JP2005200809
    • 2005-07-08
    • Kyoto Univ国立大学法人京都大学
    • NOHIRA TOSHIYUKIFUKUNAKA YASUHIROHAGIWARA RIKA
    • C25C3/34
    • PROBLEM TO BE SOLVED: To provide a method for inexpensively producing high-purity silicon, specifically by the steps of dispersing a metallic oxide powder in a molten salt and electrolytically reducing the metallic oxide.
      SOLUTION: The method for manufacturing a metal 3 such as silicon by electrolytically reducing the metallic oxide powder 2 such as silicon oxide powder comprises the steps of: suspending the metallic oxide powder 2 in the molten salt 5 of calcium chloride, any other chloride, fluoride or a mixture consisting of two or more of the compounds; and reducing the metallic oxide powder 2 on the surface of a cathode 1.
      COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:提供一种廉价生产高纯度硅的方法,特别是通过将金属氧化物粉末分散在熔融盐中并电解还原金属氧化物的步骤。 解决方案:通过电解还原氧化硅粉末等金属氧化物粉末2来制造诸如硅的金属3的方法包括以下步骤:将金属氧化物粉末2悬浮在氯化钙的熔融盐5中,任何其它 氯化物,氟化物或由两种或更多种化合物组成的混合物; 并减少阴极1表面上的金属氧化物粉末2.版权所有(C)2007,JPO&INPIT