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11. 发明专利

JP2013251339A Erosion-preventing agent for chemical mechanical polishing, slurry for chemical mechanical polishing, and chemical mechanical polishing method 有权
标题翻译：化学机械抛光防腐剂，化学机械抛光浆料，化学机械抛光方法
公开(公告)号：JP2013251339A
公开(公告)日：2013-12-12
申请号：JP2012123471
申请日：2012-05-30
申请人： Kuraray Co Ltd , 株式会社クラレ
发明人： KATO MITSURU , OKAMOTO TOMOHIRO , KATO SHINYA
IPC分类号： H01L21/304 , B24B37/00 , C09K3/14
摘要： PROBLEM TO BE SOLVED: To provide an erosion-preventing agent for chemical mechanical polishing, allowing effective prevention of erosion and dishing and also suppression of polishing amount variation due to different wafer patterns.SOLUTION: An erosion-preventing agent for chemical mechanical polishing contains: a compound (a) having four or more hydroxy groups and no amino group; a compound (b) having four or more hydroxy groups and one amino group; and a compound (c) having four or more amino groups.
摘要翻译：要解决的问题：提供用于化学机械抛光的防腐蚀剂，能够有效地防止侵蚀和凹陷，并且还抑制由于不同晶片图案引起的抛光量变化。解决方案：用于化学机械抛光的防腐蚀剂包含：具有4个以上羟基而不具有氨基的化合物（a）具有4个以上羟基和1个氨基的化合物（b）和具有四个或更多个氨基的化合物（c）。

12. 发明专利

JP2012049477A Polishing method of compound semiconductor wafer 有权
标题翻译：复合半导体波片的抛光方法
公开(公告)号：JP2012049477A
公开(公告)日：2012-03-08
申请号：JP2010192804
申请日：2010-08-30
申请人： Kuraray Co Ltd , 株式会社クラレ
发明人： KATO SHINYA , TAKAOKA NOBUO
IPC分类号： H01L21/304 , B24B37/00
摘要： PROBLEM TO BE SOLVED: To provide a polishing method exhibiting an excellent polishing rate while suppressing polishing scratch when a compound semiconductor wafer is polished.SOLUTION: In the polishing method of polishing a compound semiconductor wafer by using an abrasive material and a slurry containing abrasive grains, the abrasive material contains a nonwoven fabric consisting of extra fine single fibers having an average cross-sectional area of 0.01-30 μmand a polymer elastic body in such a range as the mass ratio of nonwoven fabric/polymer elastic body falls within a range of 90/10-55/45, and has an apparent density of 0.70-1.2 g/cmand JIS hardness of 45D-75D. The abrasive grains have a mean particle diameter of 0.01-20 μm.
摘要翻译：要解决的问题：提供一种在抛光化合物半导体晶片时抑制抛光划痕的抛光速度优良的抛光方法。解决方案：在使用研磨材料和含有磨粒的浆料抛光化合物半导体晶片的抛光方法中，研磨材料包含由超细单纤维组成的无纺布，其平均截面积为0.011- 在无纺布/聚合物弹性体的质量比的范围内的聚合物弹性体为90 / 10-55 / 45的范围内，具有30μm 2 表观密度为0.70-1.2g / cm 2，JIS硬度为45D-75D。磨粒的平均粒径为0.01-20μm。版权所有（C）2012，JPO＆INPIT

13. 发明专利

JP2008184597A Method of producing polishing pad 审中-公开
标题翻译：生产抛光垫的方法
公开(公告)号：JP2008184597A
公开(公告)日：2008-08-14
申请号：JP2007021804
申请日：2007-01-31
申请人： Kuraray Co Ltd , 株式会社クラレ
发明人： OKAMOTO TOMOHIRO , KANEDA SHUNJI , KIKUCHI HIROBUMI , KATO SHINYA
IPC分类号： C08J5/14 , B24B37/20 , B29C45/26 , B29C45/70 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a method of efficiently producing a polishing pad with a uniform thickness useful for precisely polishing a material to be polished, such as a semiconductor wafer with high polishing efficiency. SOLUTION: The production method for the polishing pad involves a process of forming a sheet-like molded article by the injection compression molding of a thermoplastic resin. The production of the sheet-like molded article having a groove pattern is carried out, for example, by forming a sheet-like molded product free of a groove pattern by injection compression molding of a thermoplastic resin, and then the groove pattern is formed thereon, or by forming the sheet-like molded article having the groove pattern by injection compression molding of a thermoplastic resin with use of a mold equipped with a stamper. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种有效地生产具有均匀厚度的抛光垫的方法，其用于精确抛光抛光材料，例如具有高抛光效率的半导体晶片。解决方案：抛光垫的制造方法包括通过热塑性树脂的注射压缩成型形成片状模塑制品的方法。具有凹槽图案的片状成型体的制造例如通过用热塑性树脂的注射压缩成型形成不含凹槽图案的片状模制品，然后在其上形成凹槽图案或通过使用配备有压模的模具通过热塑性树脂的注射压缩成型形成具有凹槽图案的片状模塑制品。版权所有（C）2008，JPO＆INPIT

14. 发明专利

JP2007246804A Method for producing resin foam 审中-公开
标题翻译：生产树脂泡沫的方法
公开(公告)号：JP2007246804A
公开(公告)日：2007-09-27
申请号：JP2006074318
申请日：2006-03-17
申请人： Kuraray Co Ltd , 株式会社クラレ
发明人： KATO MITSURU , KATO SHINYA , OKAMOTO TOMOHIRO , KANEDA SHUNJI , KIKUCHI HIROBUMI
IPC分类号： C08J9/28
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a resin foam having a relatively small foam diameter, with which a uniform foam structure is formed even in the case of a crosslinking type resin.
SOLUTION: The method for producing a resin foam comprises a process (process 1) for curing a dispersion having a polymer (A) having a structural unit derived from a hydrophilic group-containing ethylenic unsaturated monomer (a1), an ethylenic unsaturated monomer (B) and a volatile liquid (C) and a process (process 2) for removing the volatile liquid (C).
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种具有较小泡沫直径的树脂泡沫塑料的制造方法，即使在交联型树脂的情况下也形成均匀的泡沫结构。解决方案：树脂发泡体的制造方法包括使具有含有含亲水性基团的烯属不饱和单体（a1）的结构单元的聚合物（A）的分散体固化的方法（工序1），烯键式不饱和单体单体（B）和挥发性液体（C）和用于除去挥发性液体（C）的方法（方法2）。版权所有（C）2007，JPO＆INPIT

15. 发明专利

JP2014133290A Polishing pad, and method for measuring thickness of polishing layer of polishing pad 审中-公开
标题翻译：抛光垫及测量抛光垫抛光层厚度的方法
公开(公告)号：JP2014133290A
公开(公告)日：2014-07-24
申请号：JP2013002858
申请日：2013-01-10
申请人： Kuraray Co Ltd , 株式会社クラレ , Toho Engineering Kk , 東邦エンジニアリング株式会社
发明人： OKAMOTO TOMOHIRO , TAKEKOSHI YUTAKA , KIKUCHI HIROBUMI , KATO MITSURU , KATO SHINYA
IPC分类号： B24B37/24 , B24B37/22 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a polishing pad where thickness of a polishing layer can easily be measured.SOLUTION: A polishing pad comprises a polishing layer and a conductive layer laminated on the polishing layer. The polishing pad has volume resistivity of the conductive layer of 200×10Ω m or less at 20°C.
摘要翻译：要解决的问题：提供可以容易地测量抛光层的厚度的抛光垫。解决方案：抛光垫包括层压在抛光层上的抛光层和导电层。抛光垫的导电层体积电阻率为200×10＆OHgr; m以下。

16. 发明专利

JP2012210683A Polishing pad 有权
标题翻译：抛光垫
公开(公告)号：JP2012210683A
公开(公告)日：2012-11-01
申请号：JP2011077603
申请日：2011-03-31
申请人： Kuraray Co Ltd , 株式会社クラレ
发明人： TAKAOKA NOBUO , KATO SHINYA , OKAMOTO TOMOHIRO , KATO MITSURU
IPC分类号： B24B37/24 , B24D3/00 , B24D11/00 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a polishing pad which includes an entangled nonwoven fabric and a polymeric elastomer, and in which wear resistance and a polishing rate are enhanced.SOLUTION: The polishing pad includes: the entangled nonwoven fabric formed of an ultrafine fiber; and a complex of the polymeric elastomer and inorganic particles which is impregnated in the entangled nonwoven fabric where the complex contains 1-50 mass% of the inorganic particles. The inorganic particle is preferably an inorganic oxide particle having an average particle size of 50-450 nm. The inorganic particle is preferably a silica particle. The polymeric elastomer is preferably a nonporous polyurethane resin.
摘要翻译：要解决的问题：提供一种包括缠结非织造织物和聚合弹性体的抛光垫，其中提高了耐磨性和抛光速率。解决方案：抛光垫包括：由超细纤维形成的缠结非织造布; 以及在络合物含有1-50质量％无机粒子的缠结无纺布中浸渍的高分子弹性体和无机粒子的配合物。无机粒子优选为平均粒径为50〜450nm的无机氧化物粒子。无机颗粒优选为二氧化硅颗粒。聚合弹性体优选为无孔聚氨酯树脂。版权所有（C）2013，JPO＆INPIT

17. 发明专利

JP2012200712A Piping washing method 审中-公开
标题翻译：管道清洗方法
公开(公告)号：JP2012200712A
公开(公告)日：2012-10-22
申请号：JP2011070360
申请日：2011-03-28
申请人： Kuraray Co Ltd , 株式会社クラレ
发明人： KATO SHINYA , KATO MITSURU , KABASHIMA HIROSHI
IPC分类号： B08B9/027 , B08B3/04
摘要： PROBLEM TO BE SOLVED: To provide an inexpensive washing method capable of removing an adhered object such as aggregate adhered on an inner wall of piping by impact when liquid collides and not by chemical action of a chemical or by using pressure of high pressure gas.SOLUTION: The piping washing method for transporting a liquid fluid includes a step of passing a plurality of washing liquid domains and a plurality of gas domains alternately and in pulse form continuously in the piping having an inner diameter D. When an average length occupied by each washing liquid domain is L, and an average unit length occupied by each gas domain is L, the followings are satisfied: L/(L+L) is 0.15-0.85, and L+L≤50D.
摘要翻译：要解决的问题：提供一种便宜的洗涤方法，其能够在液体碰撞时通过冲击而不被化学物质的化学作用或通过使用高压的压力除去附着在管道内壁上的粘附物体加油站。解决方案：用于输送液体流体的管道清洗方法包括在具有内径D的管道中连续地交替地和脉冲形地使多个清洗液畴和多个气体域通过的步骤。当平均长度每个洗涤液畴占据的是L W ，每个气体域所占据的平均单位长度为L G 满足：L W /（L W + L G ） 0.15-0.85，L W + L G ≤50D。版权所有（C）2013，JPO＆INPIT

18. 发明专利

JP2012045690A Method for lapping object to be polished 有权
标题翻译：用于抛光物体的抛光方法
公开(公告)号：JP2012045690A
公开(公告)日：2012-03-08
申请号：JP2010192073
申请日：2010-08-30
申请人： Kuraray Co Ltd , 株式会社クラレ
发明人： KATO SHINYA , TAKAOKA NOBUO
IPC分类号： B24B37/24 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a lapping method which is excellent in the polishing rate and the surface smoothness of an object being polished and resistant to scratching in lapping an object to be polished.SOLUTION: The method for lapping an object to be polished includes providing a polishing pad stuck on a metal-made surface plate for lapping, the polishing pad satisfying the following (1)-(3) conditions; and supplying abrasive grains for polishing between the object to be polished and the polishing pad to perform lapping. (1) The polishing pad includes a nonwoven fabric which is formed from bundles of extra-fine long fibers composed of mono-fibers having an average cross sectional area of 0.01-30 μm, and polymeric elastomer, (2) the polishing pad has an apparent density of 0.7-1.2 g/cm, and (3) the polishing surface of the polishing pad has a JIS-D hardness of 45-75.
摘要翻译：要解决的问题：提供研磨抛光对象物的抛光速度和表面光滑性优异且耐划伤的研磨物的研磨方法。研磨抛光对象物的方法包括提供粘贴在金属制的表面板上进行研磨的抛光垫，所述抛光垫满足以下（1） - （3）条件; 并且在待抛光对象物与抛光垫之间供给用于研磨的磨粒以进行研磨。（1）抛光垫包括由平均截面积为0.01-30μm的单纤维组成的超细长纤维束形成的非织造织物 2 ，和聚合物弹性体，（2）抛光垫的表观密度为0.7-1.2g / cm 3，SP研磨面的研磨面为JIS -D硬度为45-75。版权所有（C）2012，JPO＆INPIT

19. 发明专利

JP2011177884A Polishing pad 有权
标题翻译：抛光垫
公开(公告)号：JP2011177884A
公开(公告)日：2011-09-15
申请号：JP2011020303
申请日：2011-02-02
申请人： Kuraray Co Ltd , 株式会社クラレ
发明人： KATO MITSURU , KIKUCHI HIROBUMI , OKAMOTO TOMOHIRO , KATO SHINYA
IPC分类号： B24B37/00 , B24B37/26 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a polishing pad especially useful when an insulation film of an oxidation film or the like formed on a semiconductor substrate and a metal film or the like are chemically and mechanically polished, capable of obtaining a high polishing speed and being also excellent in polishing uniformity and flattening performance. SOLUTION: A radial groove 2 and a concentric circular groove 3 are provided on a polishing side surface 1a of a polishing layer 1. The radial groove 2 and the concentric circular groove 3 are formed so as to satisfy the following conditions (A) and (B) while a crossing portion of the radial groove 2 and the concentric circular groove 3 belong to the radial groove 2 to make the polishing pad. (A) A ratio of an area (s1) of the radial groove occupied in sum (s1+s2) of the area (s1) of the radial groove and an area (s2) of the concentric circular groove on the polishing side surface is 8-17%. (B) A ratio of the sum (s1+s2) of the area (s1) of the radial groove and the area (s2) of the concentric circular groove occupied in an area (S) of the polishing side surface on the polishing side surface is 18-25%. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种在半导体衬底上形成的氧化膜等的绝缘膜和金属膜等进行化学和机械抛光时特别有用的抛光垫，能够获得高的抛光并且抛光均匀性和平整性能也优异。解决方案：在抛光层1的研磨侧表面1a上设置径向槽2和同心圆形槽3.径向槽2和同心圆形槽3形成为满足以下条件（A ）和（B），而径向槽2和同心圆形槽3的交叉部分属于径向槽2，以制造抛光垫。（A）径向槽的面积（s1）和抛光侧面的同心圆形槽的面积（s2）之和（s1 + s2）所占的径向槽的面积（s1） 8-17％。（B）径向槽的面积（s1）的和（s1 + s2）与抛光侧的研磨侧面的面积（S）中占有的同心圆形槽的面积（s2）的比表面积为18-25％。版权所有（C）2011，JPO＆INPIT

20. 发明专利

JP2010135493A Polishing pad and polishing method 有权
标题翻译：抛光垫和抛光方法
公开(公告)号：JP2010135493A
公开(公告)日：2010-06-17
申请号：JP2008308766
申请日：2008-12-03
申请人： Kuraray Co Ltd , Kyushu Univ , 国立大学法人九州大学 , 株式会社クラレ
发明人： DOI TOSHIRO , KUROKAWA SHUHEI , UMEZAKI YOJI , NAKAYAMA KIMIO , TAKAOKA NOBUO , KATO SHINYA
IPC分类号： H01L21/304 , B24B37/00 , B24B37/24
摘要： PROBLEM TO BE SOLVED: To provide an electrolytic CMP method excellent in the polish rate and a polishing pad used for the method. SOLUTION: The polishing pad is used for an electrolytic chemical mechanical polishing method that presses a polishing pad to a wafer, whose front surface is covered with a metal film while supplying an electrolytic solution, and voltage is applied between the wafer and the polishing pad whereby it polishes the wafer while electrolyzing the metal film, wherein a polishing pad is used that has an ultra-fine fiber entangled object containing an ultra-fine fiber with an average fineness range of 0.01-0.8 dtex united with a polymer elastic body, a bend elastic constant range of 150 to 650 MPa, a voidage range of 25-65 vol.%, and continuous holes. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供抛光速度优异的电解CMP方法和用于该方法的抛光垫。解决方案：抛光垫用于电解化学机械抛光方法，其将抛光垫压在晶片上，其晶片在其表面被供应电解液的同时被金属膜覆盖，并且在晶片和晶片之间施加电压抛光垫，由此其在电解金属膜的同时抛光晶片，其中使用具有超细纤维缠结物的抛光垫，该超细纤维缠结物体含有平均细度范围为0.01-0.8分特的超细纤维，其与聚合物弹性体，弯曲弹性常数范围为150〜650MPa，空隙率为25-65体积％，连续孔。版权所有（C）2010，JPO＆INPIT

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