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11. 发明专利

JP2006096640A Substrate for synthesizing single crystal diamond and method for producing single crystal diamond film 有权
标题翻译：用于合成单晶金刚石的基材和用于生产单晶金刚石薄膜的方法
公开(公告)号：JP2006096640A
公开(公告)日：2006-04-13
申请号：JP2004287668
申请日：2004-09-30
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： KOBASHI KOJI , TACHIBANA TAKESHI , YOKOTA YOSHIHIRO , HAYASHI KAZUYUKI , KAWAKAMI NOBUYUKI
IPC分类号： C30B29/04
摘要： PROBLEM TO BE SOLVED: To provide a substrate for synthesizing a single crystal diamond, with which a single crystal diamond film having a large area can be synthesized without generation of peeling, breakage or the like in the substrate and the single crystal diamond film formed thereon; a method for producing the same; and a method for producing the single crystal diamond film.
SOLUTION: A single crystal platinum layer 2 and a single crystal iridium layer 3 are formed on a base body 1 in this order. Then, after applying a solution obtained by dispersing a carbon fine powder 4 in an organic solvent on the surface of the single crystal iridium layer 3, the carbon fine powder 4 is arranged in a dispersed state on the surface of the single crystal iridium layer 3 by removing the organic solvent by heating it. Thereafter, a single crystal platinum layer 5 is formed so as to cover the carbon fine powder 4 and the single crystal iridium layer 3. Thereby, the substrate 10 for synthesizing the single crystal diamond, in which the carbon fine powder 4 is dispersed in the interface between the single crystal iridium layer 3 and the single crystal platinum layer 5, is obtained.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供用于合成单晶金刚石的基板，可以合成具有大面积的单晶金刚石膜，而不会在基板和单晶金刚石中产生剥离，断裂等现象在其上形成的膜; 其制造方法; 以及制造单晶金刚石膜的方法。解决方案：单晶铂层2和单晶铱层3依次形成在基体1上。然后，在将碳微细粉末4分散在有机溶剂中得到的溶液涂布在单晶铱层3的表面上之后，将碳细粉末4分散配置在单晶铱层3的表面通过加热除去有机溶剂。此后，形成单晶铂层5，以覆盖碳细粉末4和单晶铱层3.由此，用于合成单晶金刚石的基板10，其中碳细粉末4分散在获得单晶铱层3和单晶铂层5之间的界面。版权所有（C）2006，JPO＆NCIPI

12. 发明专利

JP2006080393A Method for manufacturing semiconductor element 有权
标题翻译：制造半导体元件的方法
公开(公告)号：JP2006080393A
公开(公告)日：2006-03-23
申请号：JP2004264607
申请日：2004-09-10
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： KAWAKAMI NOBUYUKI , YOKOTA YOSHIHIRO , HAYASHI KAZUYUKI , TACHIBANA TAKESHI , KOBASHI KOJI
IPC分类号： H01L21/205 , H01L29/417 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor element capable of decreasing a processing dimensional error when forming a semiconductor layer with an epitaxial growth method.
SOLUTION: A photosensitive mask layer is formed on a substrate 1 by baking after coating a photosensitive paste including an organic metallic compound. An epitaxial mask 4 comprising a metallic oxide in major proportions is formed on the substrate 1 by patterning the photosensitive mask layer with a photolithography method and further by conducting an oxidation treatment or a reductional treatment. And semiconductor diamond layers 5a, 5b are formed on the region on the surface of the substrate 1 with no epitaxial mask 4 formed with the epitaxial growth of the diamond. A source electrode 7 and a drain electrode 8 are respectively formed on the layers 5a, 5b after removing the epitaxial mask 4, and a gate electrode 9 is formed on a channel region on the surface of the substrate 1 through a gate insulating film 6.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种制造半导体元件的方法，该半导体元件能够通过外延生长法在形成半导体层时降低加工尺寸误差。解决方案：通过在涂覆包含有机金属化合物的感光浆料之后通过烘烤在基材1上形成感光掩模层。通过用光刻法对感光掩模层进行图案化，并进一步进行氧化处理或还原处理，在基板1上形成包括主要比例的金属氧化物的外延掩模4。并且半导体金刚石层5a，5b形成在基板1的表面上的区域上，没有形成有金刚石的外延生长的外延掩模4。在除去外延掩模4之后，在层5a，5b上分别形成源电极7和漏极8，并且通过栅极绝缘膜6在基板1的表面的沟道区上形成栅电极9。版权所有（C）2006，JPO＆NCIPI

13. 发明专利

JP2006040722A Secondary battery 有权
标题翻译：二次电池
公开(公告)号：JP2006040722A
公开(公告)日：2006-02-09
申请号：JP2004219230
申请日：2004-07-27
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： YOKOTA YOSHIHIRO , KAWAKAMI NOBUYUKI , KOBASHI KOJI , TACHIBANA TAKESHI , HAYASHI KAZUYUKI
IPC分类号： H01M14/00 , H01M4/02 , H01M10/36 , H01M10/38
CPC分类号： Y02E60/12
摘要： PROBLEM TO BE SOLVED: To provide a secondary battery having a lighter weight and a longer life in comparison with a conventional secondary battery.
SOLUTION: An electrode 5a, in which a low resistivity semiconductor layer 2 comprising a semiconductor material insoluble in an electrolyte 13, an ion deposition accelerating layer 6a, and an electrolyte layer 7a are formed in this order on one side of a substrate 1a, and an extraction electrode 9 is connected to the other side through a metallic film 8a, and a coating layer 11a is formed on the surface other than the surface on the low resistivity semiconductor 2 side, and an electrode 5b, in which a low resistivity semiconductor layer 3, a high resistivity semiconductor layer 4 of a semiconductor material insoluble in the electrolyte 13 while having resistance higher than the low resistivity semiconductor layer 2, and an ion deposition accelerating layer 6b are formed in this order on one side of a substrate 1b, and an extraction electrode 10 is connected to the other side through a metallic film 8b, and a coating layer 11b is formed on the surface other than the high resistivity semiconductor layer 4 side, are disposed in a vessel 12 so that the low resistivity semiconductor layer 2 faces the high resistivity layer 4, and the electrolyte 13 is filled between the electrode 5a and the electrode 5b.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：与传统的二次电池相比，提供一种重量更轻，使用寿命更长的二次电池。解决方案：其中包括不溶于电解质13的半导体材料的低电阻率半导体层2，离子沉积促进层6a和电解质层7a的电极5a依次形成在衬底的一侧 1a，并且引出电极9通过金属膜8a连接到另一侧，并且在除了低电阻率半导体2侧的表面之外的表面上形成涂层11a，其中低电阻电阻率半导体层3，不溶于电解质13的半导体材料的高电阻率半导体层4，同时具有高于低电阻率半导体层2的电阻，以及离子沉积加速层6b依次形成在基板的一侧 1b，并且引出电极10通过金属膜8b连接到另一侧，并且在除了高电阻率之外的表面上形成涂层11b 半导体层4侧设置在容器12中，使得低电阻率半导体层2面向高电阻率层4，并且电解质13填充在电极5a和电极5b之间。版权所有（C）2006，JPO＆NCIPI

14. 发明专利

JP2006019649A Diamond sensor and its manufacturing method 审中-公开
标题翻译：金刚石传感器及其制造方法
公开(公告)号：JP2006019649A
公开(公告)日：2006-01-19
申请号：JP2004198319
申请日：2004-07-05
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： HAYASHI KAZUYUKI , TACHIBANA TAKESHI , YOKOTA YOSHIHIRO , KAWAKAMI NOBUYUKI
IPC分类号： H01L31/0248
CPC分类号： H01L31/028 , G01J1/429 , H01L31/09 , H01L31/1085 , Y02E10/547
摘要： PROBLEM TO BE SOLVED: To provide a diamond sensor which can stably detect ultraviolet rays even though a distance between a lamp and object to be irradiated is short, and its manufacturing method.
SOLUTION: On an insulating base material 20 where a pair of metal wiring 21a, 21b are formed, an insulating diamond layer 31 is formed as a detecting layer on a substrate 30, and a diamond element 3, where a pair of comb-shaped electrodes 32a, 32b are formed, is mounted on the surface of the insulating diamond layer 31, and the comb-shaped electrodes 32a, 32b of the diamond element 3 and the metal wiring 21a, 21b formed on the insulating base material 20 are connected with wires 6a, 6b each other, respectively.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：即使在灯和被照射物体之间的距离短的情况下，也可以提供能够稳定地检测紫外线的金刚石传感器及其制造方法。解决方案：在形成一对金属布线21a，21b的绝缘基材20上，在基板30上形成绝缘金刚石层31作为检测层，并且金刚石元件3，其中一对梳子形成绝缘金刚石层31的表面上形成有形状的电极32a，32b，金刚石元件3的梳状电极32a，32b和形成在绝缘基材20上的金属布线21a，21b分别为分别与电线6a，6b相连。版权所有（C）2006，JPO＆NCIPI

15. 发明专利

JP2017088916A シリコン原料を用いる成膜装置审中-公开
公开(公告)号：JP2017088916A
公开(公告)日：2017-05-25
申请号：JP2015216859
申请日：2015-11-04
申请人：株式会社神戸製鋼所 , Kobe Steel Ltd
发明人： NARAI SATORU , KAWAKAMI NOBUYUKI , JIKO NORIHIRO
IPC分类号： C23C16/44 , C23C16/505 , H01L21/31
摘要：【課題】成膜装置の大型化や成膜コストを増加することなく、PECVD法を用いた薄膜層(バリア膜)の成膜速度を高め、安定操業を行うことができる成膜装置を提供する。【解決手段】試料となる基材に薄膜層を形成する成膜装置であって、試料保持機構と排気機構とを備えた反応室を有し、前記反応室は、シリコン原料と酸化性ガスとを混合する原料供給手段と、エネルギーを加えて前記シリコン原料を酸化させて薄膜層を形成するエネルギー供給手段と、未反応の原料を前記排気機構で分解又は分解物に吸着する未反応の原料回収手段とを有し、かつ前記シリコン原料はシリコン、酸素及び炭素を含有する少なくとも1の有機化合物であり、前記シリコン原料1分子を化学量論的に完全に酸化した場合に生成される全酸化物の合計の分子数Aと前記シリコン原料中に含まれるシリコンの原子数Bとが(A−B)/B≦6.75の関係を満たすように供給量を調整することを特徴とする成膜装置。【選択図】図1

16. 发明专利

JP2008166479A Wiring board and method for forming wiring 审中-公开
标题翻译：接线板和接线方法
公开(公告)号：JP2008166479A
公开(公告)日：2008-07-17
申请号：JP2006354176
申请日：2006-12-28
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： KAWAKAMI NOBUYUKI , HIRANO TAKAYUKI , AMANAKA MASAHITO
IPC分类号： H05K1/09 , H05K3/06
摘要： PROBLEM TO BE SOLVED: To provide a wiring board with wiring excellent in a corrosion resistance formed on the surface of the board comprising a porous material by a wet process such as etching or the like without increase in a relative permittivity and influence of a structure disorder, and to provide a method for forming the wiring.
SOLUTION: The method for forming the wiring on the surface of the substrate comprising the inorganic porous material having a hydrophobic property comprises a first metallic layer film forming step (a step S10) for forming the first metallic layer film on the surface of the substrate, a second metallic layer wiring pattern forming step (a step S20) for forming the second metallic layer having the predetermined wiring pattern on the surface of the first metallic layer by the metal having an ionization tendency smaller than that of the metal for forming the first metallic layer, and a first metallic layer wiring processing step (a step S30) for forming the wiring by etching the first metallic layer so as to form the predetermined wiring pattern with the second metallic layer as a mask.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供布线板，在不增加相对介电常数和相对介电常数的情况下，通过诸如蚀刻等的湿法，在包含多孔材料的板的表面上形成的耐腐蚀性优良的布线结构紊乱，并提供形成布线的方法。解决方案：在包含具有疏水性的无机多孔材料的基材表面上形成布线的方法包括：第一金属层成膜步骤（步骤S10），用于在第一金属层膜的表面上形成第一金属层膜基板，第二金属层布线图形形成步骤（步骤S20），用于通过具有比用于形成的金属的电离倾向小的金属形成在第一金属层的表面上具有预定布线图案的第二金属层第一金属层和通过蚀刻第一金属层形成布线以形成第二金属层作为掩模的预定布线图案的第一金属层布线处理步骤（步骤S30）。版权所有（C）2008，JPO＆INPIT

17. 发明专利

JP2007103688A Superconductive diamond substrate, superconductive device, and its manufacturing method 审中-公开
标题翻译：超导型金刚石基板，超导型器件及其制造方法
公开(公告)号：JP2007103688A
公开(公告)日：2007-04-19
申请号：JP2005291920
申请日：2005-10-05
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： KOBASHI KOJI , TACHIBANA TAKESHI , YOKOTA YOSHIHIRO , HAYASHI KAZUYUKI , KAWAKAMI NOBUYUKI
IPC分类号： H01L39/24 , C23C16/27 , H01L39/22
摘要： PROBLEM TO BE SOLVED: To provide superconductive diamond laminated film which is equipped with a (111) crystal plane on its surface, doped with B with high concentration, and equipped with outstanding superconductivity properties, and to provide a device and a manufacturing method. SOLUTION: The surface of a lower diamond film 2 is formed of the diamond (111) crystal plane, and quadrangular pyramidal diamond projections are formed on the above surface through a vapor-phase composition method. A superconductive diamond film 4 is laminated on the lower diamond film 2 and doped with boron with high concentration, wherein for example the atomic ratio of boron B to carbon C (B/C) is set at 5.0% or above. The diamond particles are oriented in a certain direction. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供在其表面上配备（111）晶面的超导金刚石层压膜，掺杂了高浓度的B，并且具有优异的超导性能，并且提供了一种器件和制造方法。解决方案：下金刚石膜2的表面由金刚石（111）晶面形成，并且通过气相组成法在上表面上形成四棱锥形金刚石突起。超导金刚石膜4层叠在下金刚石膜2上并掺杂高浓度的硼，其中例如硼B与碳C（B / C）的原子比为5.0％以上。金刚石颗粒沿一定方向取向。版权所有（C）2007，JPO＆INPIT

18. 发明专利

JP2006219314A Diamond membrane for electron beam transmission, and method for manufacturing the same 审中-公开
标题翻译：用于电子束传输的金刚石膜及其制造方法
公开(公告)号：JP2006219314A
公开(公告)日：2006-08-24
申请号：JP2005032305
申请日：2005-02-08
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： HAYASHI KAZUYUKI , TACHIBANA TAKESHI , KOBASHI KOJI , YOKOTA YOSHIHIRO , KAWAKAMI NOBUYUKI
IPC分类号： C30B29/04
摘要： PROBLEM TO BE SOLVED: To provide a diamond membrane for electron beam transmission hardly damaged even transmitting high output beams therethrough, and a method for manufacturing the same.
SOLUTION: An electron beam transmission membrane 2 with ≤5 μm thickness comprising a polycrystalline diamond thin film is synthesized in a vapor phase on a highly resistant Si substrate. Then a mask is formed at the central part of the electron beam transmission membrane 2, and a supporting frame 3 with ≥50 μm thickness comprising a polycrystalline diamond thin film is synthesized in a vapor phase at the periphery of the electron beam transmission membrane 2. After that, the highly resistant Si substrate is dissolved by immersing it in boiling nitric acid so as to leave the diamond membrane 1.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供用于电子束传输的金刚石膜，甚至透射高输出光束几乎不损坏，及其制造方法。解决方案：包含多晶金刚石薄膜的厚度≤5μm的电子束透射膜2在气相中合成在耐高温Si衬底上。然后在电子束透射膜2的中央形成掩模，并且在电子束透射膜2的周围以蒸汽相合成包含多晶金刚石薄膜的厚度≥50μm的支撑框架3。之后，通过将高耐蚀Si衬底浸入沸腾的硝酸中以离开金刚石膜1而溶解。版权所有（C）2006，JPO＆NCIPI

19. 发明专利

JP2006120885A Process for fabricating semiconductor element 有权
标题翻译：制造半导体元件的工艺
公开(公告)号：JP2006120885A
公开(公告)日：2006-05-11
申请号：JP2004307673
申请日：2004-10-22
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： KOBASHI KOJI , YOKOTA YOSHIHIRO , KAWAKAMI NOBUYUKI , TACHIBANA TAKESHI , HAYASHI KAZUYUKI
IPC分类号： H01L29/786 , H01L21/28 , H01L21/336
摘要： PROBLEM TO BE SOLVED: To provide a process for fabricating a semiconductor element in which the fabrication process can be simplified and the characteristics can be enhanced without increasing the number of steps.
SOLUTION: A gap layer 2 is formed on an insulating diamond substrate 1 and conductive diamond layers 3a and 3b are formed on the opposite sides thereof. The gap layer 2 is then dissolved and removed and a high resistance diamond layer 4 is formed to cover a part of the substrate 1 and the conductive diamond layers 3a and 3b. Subsequently, a gate insulating film 5 is formed on the high resistance diamond layer 4, and protective films 6a and 6b are formed between a gate electrode forming region and a source electrode forming region and between the gate electrode forming region and a drain electrode forming region. After a metal electrode layer 7 is formed to cover them, the metal electrode layer 7 is removed by a focusing ion beam excepting the portions becoming a source electrode 8, a gate electrode 9, and a gate electrode 10.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种制造半导体元件的工艺，其中可以简化制造工艺，并且可以在不增加台阶的情况下提高特性。解决方案：在绝缘金刚石基板1上形成间隙层2，并且在其相对侧上形成导电金刚石层3a和3b。然后将间隙层2溶解并除去，形成高电阻金刚石层4以覆盖基板1和导电金刚石层3a和3b的一部分。接着，在高电阻金刚石层4上形成栅极绝缘膜5，在栅极形成区域和源极电极形成区域之间以及栅极形成区域和漏极形成区域之间形成保护膜6a，6b 。在形成金属电极层7以覆盖它们之后，除了成为源电极8，栅电极9和栅电极10的部分之外，通过聚焦离子束除去金属电极层7.权利要求（ C）2006，JPO＆NCIPI

20. 发明专利

JP2006104441A Method for forming porous film and porous film formed by the same method 有权
标题翻译：用于形成多孔膜和多孔膜的方法
公开(公告)号：JP2006104441A
公开(公告)日：2006-04-20
申请号：JP2005199598
申请日：2005-07-08
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： KAWAKAMI NOBUYUKI , HIRANO TAKAYUKI
IPC分类号： C08J9/26 , C01B33/12 , C08L83/00
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02343 , H01L21/31695
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a porous film in which various kinds of materials can be used irrespective of superiority or inferiority of compatibility with supercritical fluid which is an extracting solvent as a pore-forming material for forming pores of the porous film and furthermore, selective freedom of pore size and skeleton structure is large.
SOLUTION: The method for forming a porous film includes the precursor film forming step for forming a precursor film containing a skeleton material and a pore-forming material in a mixed state, a decomposition step for decomposing the pore-forming material constituting the precursor film by oxidation in an oxidizing atmosphere, and the extraction step for extracting the decomposed pore-forming material with a supercritical fluid. The pore-forming material may be a surfactant. The surfactant may be decomposed by oxidation in an oxidizing atmosphere at 100 to 150°C.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种形成多孔膜的方法，其中可以使用各种材料，而不管与作为用于形成孔的成孔材料的萃取溶剂的超临界流体的相容性的优异性或劣化性的多孔膜，此外，孔尺寸和骨架结构的选择性自由度大。解决方案：用于形成多孔膜的方法包括用于形成含有骨架材料和混合状态的成孔材料的前体膜的前体膜形成步骤，用于分解构成材料的成孔材料的分解步骤在氧化气氛中通过氧化的前体膜，以及用超临界流体萃取分解的造孔材料的提取步骤。造孔材料可以是表面活性剂。表面活性剂可以在100〜150℃的氧化性气氛中通过氧化分解。版权所有（C）2006，JPO＆NCIPI

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