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11. 发明专利

JPS5161268A Handotaisochinoshikenho 失效
公开(公告)号：JPS5161268A
公开(公告)日：1976-05-27
申请号：JP13653674
申请日：1974-11-26
申请人： Mitsubishi Electric Corp
发明人： SAKAI TSUTOMU
IPC分类号： G01R31/26 , H01L21/66

12. 发明专利

JPS5146869A HANDOTAISOCHINO DENKYOKU 失效
公开(公告)号：JPS5146869A
公开(公告)日：1976-04-21
申请号：JP12057774
申请日：1974-10-18
申请人： MITSUBISHI ELECTRIC CORP
发明人： HIROSE YOSHIHIKO , SAKAI TSUTOMU
IPC分类号： H01L29/41 , H01L21/28 , H01L29/43

13. 发明专利

JP2000097990A BURN-IN TESTER FOR SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2000097990A
公开(公告)日：2000-04-07
申请号：JP26916498
申请日：1998-09-24
申请人： MITSUBISHI ELECTRIC CORP
发明人： NAITO KENSAKU , SAKAI TSUTOMU
IPC分类号： G01R31/26 , G01R31/28 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To make accurately measurable and controllable the temperature of a semiconductor chip by providing a temperature measuring wire at the chip having a plurality of semiconductor devices, measuring the temperature of the chip from an electric resistance change of the measuring wire of the chip, and regulating the temperature according to its result. SOLUTION: An Al, W, Cu, polycrystal silicon and the like are selectively used according to a requesting function for a wiring material of each layer of an integrated circuit 51 of a semiconductor chip 5, and a temperature measuring wiring 52 is formed of the same material and step as those of the circuit 51 at a predetermined position. The electric resistance of the wiring 51 linearly changed with respect to temperature rise is measured by a voltage and current measuring instrument 82, the temperature of the chip 5 is accurately obtained, and the air volume of temperature regulating units 70 is controlled by a controller 83 based on its result. Thus, the heating amount and the air volume of the burn-in tester can be individually controlled at the chips 5, and the surface temperature of the overall chips 5 can be accurately uniformly controlled.

14. 发明专利

JPS61255071A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPS61255071A
公开(公告)日：1986-11-12
申请号：JP9853085
申请日：1985-05-07
申请人： MITSUBISHI ELECTRIC CORP
发明人： SAKAI TSUTOMU , HATA TSUTOMU
IPC分类号： H01L21/8247 , G11C17/00 , H01L29/78 , H01L29/788 , H01L29/792
摘要： PURPOSE:To prevent the change of stored information due to defects of an insulating film or generation of contaminated ions by arranging plural floating gates when a selection gate and a floating gate are arranged on a semiconductor substrate. CONSTITUTION:A floating gate 7 is formed between a floating gate 6 and a selection gate 5 with the one end of it extended near the side part of the gate 6 so as to facilitate the implantation of hot electrons in a pinch-off state. When information is written, a voltage is applied to the gate 5 and a drain 3 so as to form a pinch-off state between a source 2 and the drain 3. The hot electrons generated at this time are attracted to the gate 5 and are implanted into two gates 6 and 7, thereby storing the information. Accordingly, if there is a defect in the oxide film formed around the gate 7, for example, and the electrons accumulated are released, a threshold value observed from the gate 6 does not become lower than a predetermined value and the stored information does not change.

15. 发明专利

JPS60160647A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS60160647A
公开(公告)日：1985-08-22
申请号：JP1624384
申请日：1984-01-31
申请人： MITSUBISHI ELECTRIC CORP
发明人： SAKAI TSUTOMU
IPC分类号： H01L27/04 , H01L21/82 , H01L21/822 , H01L27/08
摘要： PURPOSE:To enable externally control the resistance of an internal resistor in a semiconductor device by forming an oxidized film of varied thickness for each electrode of resistor on each electrode of resistor installed on plural resistors placed in parallel and forming an electrode for connection on the oxidized film. CONSTITUTION:Resistors 2-4 are placed in parallel and by connecting how many of these resistors 2-4, an expected resistance can be obtained. In order to connect the resistors 2-4, destruction of an oxidized film between an electrode 13 for connection and electrodes 9-11 of the resistors is used. Since voltage for the destruction is determined by the thickness of the oxidized film 12, number of the resistors to be connected can be decided by voltage applied to an external terminal connected to the electrode 13 for connection. That is, if the electrode 9 of the resistor 2 and the electrode 13 for connection are connected by the destruction of oxidized film, one resistor 2 is used and then if the electrode 10 of the resistor and the electrode 13 for connection are connected by increasing the applied voltage for destructing the oxidized film, the resistors 2, 3 are connected in parallel.

16. 发明专利

JPS5783028A Manufacture of semiconductor device 失效
标题翻译：半导体器件的制造
公开(公告)号：JPS5783028A
公开(公告)日：1982-05-24
申请号：JP15922080
申请日：1980-11-11
申请人： Mitsubishi Electric Corp
发明人： SAKAI TSUTOMU , TAKEUCHI MASAHARU , TANAKA TERUICHIROU
IPC分类号： H01L21/22 , H01L21/00
CPC分类号： H01L21/67115
摘要： PURPOSE:To obtain a uniform and highly precise diffusion layer by a method wherein, when a plurality of semiconductor wafers are placed in an airtight diffusion furnace and a diffusion is performed by contacting the wafers with an inert air stream containing impurities, a through-hole is provided in the center of each wafer and it is supported by a supporting shaft. CONSTITUTION:When the plurality of semiconductor wafers 1 to be diffused are placed in the airtight diffusion furnace 3, a through-hole is provided at the center of the wafers 1 in advance, a supporting shaft 7 is inserted in the hole and the wafers 1 are arranged with prescribed intervals. Then, an inert air stream containing impurities flows from an opening of the diffusion furnance 3, and a desired diffusion layer is grown on the surface of the wafers 1. At this time, when the wafers 1 are rotated together with the supporting shaft 7, a more uniform diffusion layer can be obtained. Through these procedures, there develops no unsatisfactorily diffused section at the part contacting a boat, since a wafer supporting boat is not used, the yielding rate is improved and the distortion in the wafer is reduced because the wafers are supported as above-mentioned.
摘要翻译：目的：通过以下方法获得均匀且高度精确的扩散层：其中当将多个半导体晶片放置在气密扩散炉中并且通过使晶片与含有杂质的惰性气流接触来进行扩散时，通孔设置在每个晶片的中心并且由支撑轴支撑。构成：当要扩散的多个半导体晶片1被放置在气密扩散炉3中时，预先在晶片1的中心处设置通孔，将支撑轴7插入孔中，并且晶片1 以规定的间隔排列。然后，含有杂质的惰性空气流从扩散炉3的开口流出，并且在晶片1的表面上生长期望的扩散层。此时，当晶片1与支撑轴7一起旋转时，可以获得更均匀的扩散层。通过这些方法，由于不使用晶片支撑舟皿，所以在与船接触的部分没有发生不令人满意的扩散部分，因为如上所述支撑晶片，所以屈服率提高并且晶片的变形减小。

17. 发明专利

JPS5477074A TESTING METHOD OF SEMICONDUCTOR DEVICES 失效
公开(公告)号：JPS5477074A
公开(公告)日：1979-06-20
申请号：JP14466677
申请日：1977-12-01
申请人： MITSUBISHI ELECTRIC CORP
发明人： ONODERA YASUHIKO , SAKAI TSUTOMU
IPC分类号： G01R31/26 , H01L21/66
摘要： PURPOSE:To markedly increase the practicability and severity of reliability testing by observing the inside of specimens during and after completion of the electrical reliability testing. CONSTITUTION:Internal observation of a part of the specimens which have been kept beforehand as the specimens for internal observation during the respective measurement times under electrical reliability testing of semiconductor elements and the internal observation of a part or the whole of the specimens afer finishing of the test are performed. These internal observations are performed by decomposing the sealing resins covering the elements or opening their hermetic seals and through direct observation by naked eyes or visual observation by the used of a microscope.

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