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11. 发明专利

JPS6085699A FORMATION OF COMPOSITE PIEZOELECTRIC MATERIAL 失效
公开(公告)号：JPS6085699A
公开(公告)日：1985-05-15
申请号：JP19241483
申请日：1983-10-17
申请人： HITACHI LTD , HITACHI MEDICAL CORP
发明人： NAKATANI CHITOSE , TAKEUCHI HIROYUKI , NAGASAWA MASAYUKI
IPC分类号： A61B8/00 , B06B1/06 , H04R17/00 , H04R31/00
摘要： PURPOSE:To make easily and securely a hardly workable composite piezoelectric material for a probe of a ultrasonic diagonostic device by cutting a surface of a piezoelectric vibrator with remaining some portion of its thickness, forming a cutting groove and processing said piezoelectric vibrator from its back side after filling said cutting groove with resin. CONSTITUTION:A piezoelectric vibrator 301 is temporarily applied to a base 303 having a satisfactory parallelism and flatness by an adhesive agent 302 which is softened by heating such as wax. Then the piezoelectric vibrator 301 is not completely cut, but is cut 304 in matrix-shaped with remaining its half thickness. The cut 304 is filled with a resin 307 such as polyurethane and epoxyresin and hardened. The adhesive 302 is melted and the piezoelectric vibrator is turned over to apply to the base 303 by wax. Next, the piezoelectric vibrator from a 401 face to a 402 face is polished, thereby making composite material.

12. 发明专利

JP2001355410A STEAM TURBINE PLANT 失效
公开(公告)号：JP2001355410A
公开(公告)日：2001-12-26
申请号：JP2000180741
申请日：2000-06-12
申请人： HITACHI LTD
发明人： NAGASAWA MASAYUKI , HAMAURA KIICHI
IPC分类号： F01D25/00 , F01D25/10 , F01K7/24
摘要： PROBLEM TO BE SOLVED: To provide a steam turbine plant capable of shortening a cooling time of a hygroscopic moisture separating device after stopping the steam turbine plant and remarkably shortening a plant periodic inspection time. SOLUTION: In this steam turbine plant comprising a high-pressure turbine 2, a low-pressure turbine 4 driven by the steam discharged from the high- pressure turbine, a steam condenser for condensing the steam discharged from the turbine, and the hygroscopic moisture separating device 3 for separating and removing the hygroscopic moisture of the steam discharged from the high- pressure turbine, a cooling water injection system 13 for injecting the cooling water into a hygroscopic moisture separator body in stopping the plant is mounted on the hygroscopic moisture separating device 3, the cooling water is injected into the hygroscopic moisture separator body in stopping the plant, to cool the hygroscopic moisture separator body, and the cooling water after the cooling is recovered in the steam condenser 5 through a drain tank 12 of the hygroscopic moisture separator.

13. 发明专利

JP2000038929A FUEL GAS PRESSURE REDUCTION AND HEATING EQUIPMENT FOR GAS TURBINE 失效
公开(公告)号：JP2000038929A
公开(公告)日：2000-02-08
申请号：JP20769998
申请日：1998-07-23
申请人： HITACHI LTD
发明人： NAGASAWA MASAYUKI , KAWAUCHI AKIHIRO , KOBAYASHI TOSHIKI , NONAKA SETSUO
IPC分类号： F02C7/22 , F02C7/224
摘要： PROBLEM TO BE SOLVED: To depress the expansion of a facility scale, the reinforcement of piping and device material, and an increase in the usage of a heating medium such as auxiliary steam relative to a variation in required heating rate caused by a flactuation in the pressure and temperature of a fuel gas supplied to a gas turbine and by a flactuation in fuel consumption and to supply fuel gas at an appropriate temperature. SOLUTION: This fuel gas pressure reduction and heating equipment has: a heater 1 placed at a fuel gas supply system for a gas turbine and used for heating a fuel gas; a bypass pipe conduit 3 for bypassing part of the fuel gas passing through the heater 1; a flow rate adjusting valve provided on the pipe conduit; and a pressure reduction device 2 placed at the downstream side of the heater 1 and used for pressure-reducing the gas heated by the heater 1. Fuel gas temperature at the outlet of the pressure reduction device is controlled by controlling the flow rate adjusting valve. The heating medium supply system of the heater is provided with a heating medium shut-off valve 7 for shutting off the flow of the heating medium. When the supplied fuel gas is not required for heating, the heating medium shut-off valve 7 shuts off the heating medium.

14. 发明专利

JPH08121117A STARTING METHOD FOR MULTI-SHAFT TYPE COMPOUND POWER GENERATION PLANT 失效
公开(公告)号：JPH08121117A
公开(公告)日：1996-05-14
申请号：JP26255694
申请日：1994-10-26
申请人： HITACHI LTD
发明人： NAGASAWA MASAYUKI , AKIYAMA KOSEI , UTAMURA MOTOAKI
IPC分类号： F01D19/00 , F01K13/02 , F01K23/10 , F02C6/00 , F02C6/18
摘要： PURPOSE: To shorten starting time by starting a gas turbine and an exhaust heat recovery boiler which have the smallest heat capacity in the main steam pipes from an exhaust heat recovery boiler to a main steam header and followed by starting other gas turbines and exhaust heat recovery boilers when a plant is started. CONSTITUTION: If metal heat capacities of main steam pipes 8a, 8b from exhaust heat recovery boilers 4a, 4b to a main steam header 17 are different, the smaller the metal heat capacity is, the less amount of lost heat of steam which is lost while pipes are heated to a predetermined temperature, so that the steam temperature flowing into a main steam header 17 is increased rapidly. For example, if the metal heat capacity of the main steam pipe 8a is smaller than that of the main steam pipe 8b, at first gas turbine 3a is started up when the only steam of one axis is used and then a steam turbine 27 is started by using the steam flowing through the main steam pipe 8a. An exhaust air of a turbine is sent to a circulating water vessel 31 flowing through a turbine by-pass system branched off from a medium pressure main steam pipe 22 and is condensated. Then, a gas turbine 3b is started.

15. 发明专利

JP2002043256A METHOD AND APPARATUS FOR PLANARIZING SEMICONDUCTOR WAFER 失效
公开(公告)号：JP2002043256A
公开(公告)日：2002-02-08
申请号：JP2000231389
申请日：2000-07-27
申请人： HITACHI LTD
发明人： YASUI KAN , KATAGIRI SOUICHI , NAGASAWA MASAYUKI , YAMAGUCHI TAKATADA , KAWAMURA YOSHIO
IPC分类号： B24B37/00 , C09K3/14 , H01L21/304 , H01L21/3105
摘要： PROBLEM TO BE SOLVED: To planarize a wafer surface pattern in a semiconductor device manufacturing process excellent in planarizing and superior in polish quantity uniformity and controllability. SOLUTION: A semiconductor wafer having at least two kinds of different films exposed thereon is planarized by polishing, using a grindstone and a process solution containing a dispersant. Adding the dispersant in the process using the grindstone improves the polishing selectivity with respect to the kind of films to obtain excellent planarizing and a good process quantity uniformity as well as the stability of process and the controllability. This improves the polishing rate, increases the throughput and makes possible reduction of the manufacturing time and cost. Especially the planarizing and the uniformity in a tradeoff relation in the prior art can be made compatible enough to facilitate the high-accuracy planarizing processes such as shallow trench element isolating process and reduce the cost.

16. 发明专利

JP2001196337A METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001196337A
公开(公告)日：2001-07-19
申请号：JP2000005866
申请日：2000-01-07
申请人： HITACHI LTD
发明人： KAWAMURA YOSHIO , YASUI KAN , SATO MASAHIKO , KATAGIRI SOUICHI , NAGASAWA MASAYUKI , HARADA KUNIO , OSABE SATOSHI , YAMAGUCHI TAKATADA
IPC分类号： B24B37/04 , B24B37/30 , B24B37/32 , H01L21/304 , H01L21/3105 , H01L21/321
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device by which a high-performance semiconductor device can be manufactured at a high yield by flatly polishing a thin film formed on the surface of a substrate all over the substrate without causing the so-called edge sagging by preventing the occurrence of nonuniform polishability on the outer peripheral surface of a substrate. SOLUTION: At the time of polishing a thin film formed on the surface of the substrate while the rear surface of the substrate is held, local stresses generated in the peripheral edge section of the substrate are reduced by a guide provided around the substrate. In addition, the deformation of the peripheral edge section is reduced by means of a recessed groove formed on the guide.

17. 发明专利

JPH11170155A POLISHING DEVICE 失效
公开(公告)号：JPH11170155A
公开(公告)日：1999-06-29
申请号：JP33845697
申请日：1997-12-09
申请人： HITACHI LTD
发明人： KONDO SEIICHI , HONMA YOSHIO , KUSUKAWA KIKUO , NAGASAWA MASAYUKI
IPC分类号： B24B53/017 , H01L21/304 , B24B37/00
摘要： PROBLEM TO BE SOLVED: To easily keep the flatness of an abrasive cloth by providing, on a conditioning equipment, a mechanism moved on the surface of the abrasive cloth on the basis of the measurement result of an unevenness measuring instrument to flatten the surface. SOLUTION: When an unevenness measuring instrument is moved on a transfer bar 15 set in parallel thereto on an abrasive surface plate 11, the radius vector directional uneven form on the surface of an abrasive cloth 12 is measured. When this measurement is repeated about 6 times while rotating the abrasive surface plate 11 by about 30 deg., the unevenness on the whole abrasive cloth can be measured. The unevenness measuring instrument 14 and a conditioner 13 are moved so that the conditioner 13 reaches the position on the abrasive cloth 12 measured by the unevenness measuring instrument 14 after a fixed time. The load added to the conditioner 13 is set by transmitting a signal 19 from a control device 17 in proportional to the output 18 of the unevenness measuring instrument 14. Thus, the conditioning can be ended in a minimum time while keeping the flatness of the surface of the abrasive cloth 12.

18. 发明专利

JPH08229809A SUBSTRATE HOLDER FOR POLISHING DEVICE, AND POLISHING METHOD THEREOF 失效
公开(公告)号：JPH08229809A
公开(公告)日：1996-09-10
申请号：JP4157895
申请日：1995-03-01
申请人： HITACHI LTD
发明人： KUSUKAWA KIKUO , HONMA YOSHIO , NAGASAWA MASAYUKI , MORIYAMA SHIGEO
IPC分类号： B24B37/04 , B24B37/30 , H01L21/304 , H01L21/68 , H01L21/683
摘要： PURPOSE: To provide a substrate holder structure for a polishing device, and a polishing method thereof for forming a flat substrate surface. CONSTITUTION: A suction hole 5 for carrying a sample to a porous resin layer 4 on the surface of a holder 3 of a substrate 1 and for fixing the sample to the holder 3, and a back pressure hole 6 for improving uniformity of polishing are provided separately. Suction pressure and back pressure at the time of polishing can thus be separately adjusted, thereby polishing work can be performed in the condition where a substrate surface is kept flat.

19. 发明专利

JPH08153696A ABRASIVE AND POLISHING 失效
公开(公告)号：JPH08153696A
公开(公告)日：1996-06-11
申请号：JP25240295
申请日：1995-09-29
申请人： HITACHI LTD
发明人： HONMA YOSHIO , KUSUKAWA KIKUO , MORIYAMA SHIGEO , NAGASAWA MASAYUKI
IPC分类号： B24B37/00 , C09K3/14 , H01L21/304
摘要： PURPOSE: To enable polishing of a fragile insulating film CL formed at a relatively low temperature without deteriorating current characteristics of a semiconductor device by polishing the main surface of an organic insulating film on a board with cerium oxide. CONSTITUTION: A wiring board 20 comprises an aluminum-alloy wiring 21, a first insulating film 22 consisting of SiO2 formed on the wiring 21 by means of PECVD, and an organic insulating film 23 applied on the film 22. Then the organic insulating film 23 is polished with ceria-abrasive which uses cerium oxide. The first insulating film 22 is scarcely polished with this ceria-abrasive so that the end-point decision margin for the polishing is sufficiently large. After the polishing, the wiring board 20 is immersed in a mixed solution of nitric acid and hydrogen peroxide, by which solution the cerium oxide is etched, the ceria-abrasive is liberated, and cleaning is carried out effectively. Thereafter, neutralizing treatment or cleaning treatment for deposited material other than the ceriaabrasive is carried out, and then a second inorganic insulating film 24 consisting of SiO2 is formed by means of PECVD.

20. 发明专利

JPH0786214A METHOD OF FLATTENING POROUS RESIN 失效
公开(公告)号：JPH0786214A
公开(公告)日：1995-03-31
申请号：JP22986793
申请日：1993-09-16
申请人： HITACHI LTD
发明人： FURUSAWA KENJI , HONMA YOSHIO , KUSUKAWA KIKUO , MORIYAMA SHIGEO , NAGASAWA MASAYUKI
IPC分类号： H01L21/304
摘要： PURPOSE:To flatten the surface of a backing pad so as to get a flat insulating film without unevenness by polishing or grinding the surface of solid resin and the surface of porous resin thereby removing the solid resin so as to flatten the porous resin. CONSTITUTION:A backing pad 2 or polishing made of foaming urethane 0.5mm thick on the market is stuck to a polishing jig 1 being a support member. Next, 6% polyvinyI aqueous solution is dropped while keeping the backing pad 2 horizontally, and it is heated for one hour or more on a hot plate kept at 50 deg.C. As a result, water evaporates, and a polyvinyl film 4 is made. Next, this surface is dry-polished. Further it is polished by 30mum from the point of time when polyurethane 2 begins to be exposed on the surface. Then, this backing pad 2 is washed, and the polyvinyl 4 is removed. Hereby, a flat insulating film without unevenness in polishing can be gotten.

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