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11. 发明专利

JP2010011440A Acoustic wave device and high-frequency filter using the same 审中-公开
标题翻译：声波设备和高频滤波器使用相同
公开(公告)号：JP2010011440A
公开(公告)日：2010-01-14
申请号：JP2009071611
申请日：2009-03-24
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： ISOBE ATSUSHI , ASAI KENGO
IPC分类号： H03H9/145 , H03H9/25 , H03H9/64
CPC分类号： H03H9/0222
摘要： PROBLEM TO BE SOLVED: To provide a boundary acoustic wave device which is compact and excellent in temperature stability, possesses excellent Q-value, and features low cost. SOLUTION: A boundary acoustic wave device is obtained by patterning a comb electrode with a film thickness of hm and an electrode finger period of λ, whose main ingredient is aluminum, and a shorting reflector (thickness hr) onto the surface of a θYX-LN single crystalline piezoelectric substrate, and then by forming a silicon oxide film with a film thickness of h1 and an aluminum nitride film 6 with a film thickness of h2 on the comb electrode and the reflector, wherein: 2.5≤hr/λ≤8.5%. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种紧凑且温度稳定性优异的弹性边界波装置，具有优异的Q值，成本低廉。解决方案：通过将主要成分为铝的膜厚度为hm和电极指期λ的梳状电极和短路反射器（厚度hr）图案化，形成弹性边界声波器件 θYX-LN单晶压电基板，然后通过在梳电极和反射器上形成膜厚为h1的氧化硅膜和膜厚为h2的氮化铝膜6，其中：2.5≤hr/λ≤ 8.5％。版权所有（C）2010，JPO＆INPIT

12. 发明专利

JP2002152007A LAMB WAVE TYPE ELASTIC WAVE RESONATOR 失效
公开(公告)号：JP2002152007A
公开(公告)日：2002-05-24
申请号：JP2000352552
申请日：2000-11-15
申请人： HITACHI LTD
发明人： ISOBE ATSUSHI , KACHI TAKESHI
IPC分类号： H03H9/145 , H03H9/17 , H03H9/25
摘要： PROBLEM TO BE SOLVED: To provide a Lamb wave type elastic wave resonator that has a very width proportional bandwidth. SOLUTION: Interdigital electrodes and reflectors are formed on a lithium niobate single crystal piezoelectric substrate having its orientation rotated around the X axis from the Y axis toward the Z axis direction at angles within a range of -10 to 70-degrees, and the width of the electrode fingers is selected to be a multiple of 0.1 to 0.35 of the electrode pitch and the thickness of the piezoelectric substrate is selected to be smaller than a multiple of 0.23 of the electrode pitch.

13. 发明专利

JP2000286663A SURFACE ACOUSTIC WAVE ELEMENT 失效
公开(公告)号：JP2000286663A
公开(公告)日：2000-10-13
申请号：JP2000023270
申请日：2000-01-27
申请人： HITACHI LTD , HITACHI ELECTRONICS
发明人： ISOBE ATSUSHI , HIKITA MITSUTAKA , ASAI KENGO , SUMIOKA JUNJI
IPC分类号： H03H9/145
摘要： PROBLEM TO BE SOLVED: To obtain an inexpensive small-sized surface acoustic wave resonator which is reduced in spurious response. SOLUTION: In a surface acoustic wave resonator in which an IDT electrode weighted with the crossing widths W of electrode fingers 13 is formed on a piezoelectric substrate 11, bus bars 12-1 and 12-2 are installed with their direction being deviated from the direction of the group velocity of surface acoustic waves excited by the IDT electrode by 18 deg.-72 deg.. Consequently, such an effect that strongly suppresses spurious responses is realized. In addition, the chip size of the resonator is reduced. Therefore, the size and manufacturing cost of a surface acoustic wave element is reduced.

14. 发明专利

JPH11150438A BAND REJECTION TYPE FILTER USING IDT TYPE SURFACE ACOUSTIC WAVE RESONATOR 失效
公开(公告)号：JPH11150438A
公开(公告)日：1999-06-02
申请号：JP31479197
申请日：1997-11-17
申请人： HITACHI LTD
发明人： ISOBE ATSUSHI , HIKITA MITSUTAKA , SHIBAGAKI NOBUHIKO , ASAI KENGO
IPC分类号： H03H9/145 , H03H9/64
摘要： PROBLEM TO BE SOLVED: To obtain a band rejection type filter with high attenuation at a lock band. SOLUTION: Plural IDT surface acoustic wave resonators, each using a θYX-LT piezoelectric substrate 5 and Al electrodes 1A, 1B are connected in series and number of pairs of the resonators, the electrode period, the film thickness and a value θ are selected to be desired values. Thus, the propagation loss of a surface acoustic wave in the vicinity of an anti-resonance frequency o the resonator is negligibly small. As a result, the attenuation is improved by 4 dB or more compared to that of a conventional band rejection filter employing a 36 XY-LT piezoelectric substrate.

15. 发明专利

JPH10255238A MAGNETIC HEAD AND MAGNETIC RECORDING DEVICE 失效
公开(公告)号：JPH10255238A
公开(公告)日：1998-09-25
申请号：JP6049197
申请日：1997-03-14
申请人： HITACHI LTD
发明人： MARUYAMA YOJI , ISOBE ATSUSHI
IPC分类号： G11B5/39 , G11B5/02
摘要： PROBLEM TO BE SOLVED: To reproduce high-density magnetic information close to the position in the longitudinal direction of a magnetoresistive film by providing an open termination line being constituted by the magnetoresistive film in a magnetic head, applying a high-frequency voltage, and detecting the presence of a reflection wave caused by an obtained, local resistance change. SOLUTION: A high-frequency voltage is applied to an open termination line 40 from a high-frequency lower supply 54. When there is a local resistance change in a magnetoresistive film, a reflection wave is generated at that part. A transmission line of a high-frequency voltage wave containing the reflection wave from the magnetoresistive film (a path via an amplifier 52) is provided in parallel with a transmission line from a high-frequency voltage source (a path via an amplifier 53) and the amplitude and the phase of a waveform from each transmission line are compared by a phase/amplitude comparator 61. The direction of the phase of the high-frequency voltage waveform is inverted at a part where a resistance is changed. The frequency of the high-frequency voltage is changed and distance information up to a detection point is obtained, thus detecting the existence position of a plurality of magnetic information close to the arbitrary place of the longitudinal direction of the magnetoresistive film simultaneously.

16. 发明专利

JPH1084245A SURFACE ACOUSTIC WAVE ELEMENT 失效
公开(公告)号：JPH1084245A
公开(公告)日：1998-03-31
申请号：JP23882796
申请日：1996-09-10
申请人： HITACHI LTD
发明人： ISOBE ATSUSHI , HIKITA MITSUTAKA , ASAI KENGO , TAKUBO CHISANORI
IPC分类号： H03H9/25
摘要： PROBLEM TO BE SOLVED: To provide a resonator which has a high transmission speed, a large electromechanical coupling coefficient and a large impedance ratio between the resonance frequency and the anti-resonance frequency by forming a comb- line electrode of specific thickness on a Y-cut surface having a specific rotation frequency of an LiNbO3 single crystal and using a surface acoustic wave of a transmission speed equal to a specific level or higher. SOLUTION: A comb-line electrode 1 is formed on a θ-degree rotation Y-cut surface of an LiNbO3 single crystal 2 by the patterning of a metallic film consisting primarily of Al. Thus, a single openirng resonator is obtained. The electrode 1 is positioned vertical (Z') against an X axis and the surface acoustic wave is transmitted in the Z' direction. Then -20

17. 发明专利

JPH06164305A SURFACE ACOUSTIC WAVE DEVICE 失效
公开(公告)号：JPH06164305A
公开(公告)日：1994-06-10
申请号：JP30674992
申请日：1992-11-17
申请人： HITACHI LTD
发明人： ISOBE ATSUSHI , HIKITA MITSUTAKA , ASAI KENGO
IPC分类号： H03H9/25
摘要： PURPOSE:To provide a low-loss filter and a filter whose attenuation amount is large by specifying the rotation angle of a cut surface measured from a Y axis and an angle between a surface acoustic wave propagating direction and an X axis. CONSTITUTION:In a surface acoustic wave device using Love wave type surface acoustic waves for not emitting energy to the inside of a substrate constituted of a rotation Y cut crystal piezoelectric substrate for which the rotation angle of the cut surface measured from the Y axis is (theta+90 deg.) and an electrode formed on its surface by a metallic film, when the angle between the surface acoustic wave propagating direction and the X axis is psi, it is defined as 20 deg. can be enlarged but also transmission/reception is facilitated by the electrode present on the substrate surface. Thus, energy loss can be reduced and the small high-performance surface acoustic wave device can be obtained since the spurious components of the Rayleigh waves are small.

18. 发明专利

JPH05129878A SURFACE ACOUSTIC WAVE DEVICE 失效
公开(公告)号：JPH05129878A
公开(公告)日：1993-05-25
申请号：JP28836591
申请日：1991-11-05
申请人： HITACHI LTD
发明人： ISOBE ATSUSHI , HIKITA MITSUTAKA , ASAI KENGO
IPC分类号： H03H9/25 , H03H9/64
摘要： PURPOSE:To provide the small sized surface acoustic wave device with a low loss, a zero temperature characteristic by using a crystal substrate whose angles theta, phi have a specific relation, where PHI is an angle with respect to the X axis in the surface acoustic wave propagation direction in the theta+90 deg. rotation Y-cut crystal substrate and the electrode made of gold or silver on the surface of the substrate. CONSTITUTION:Angles theta, phi are selected to have a relation in equation I, where phiis the surface acoustic wave propagation direction measured from the X axis by using a crystal Love wave and theta+90 deg. is a rotation angle of a cut face measured from the Y axis. The device is made of the crystal substrate whose angles theta, phi have a specific relation and of the metallic thin film electrode formed on the surface of the crystal substrate. Thus, the characteristic of a low loss and a high Q is realized. Furthermore, since gold with a large reflection coefficient is employed for the electrode, a very high Q (=1000) is obtained with a few electrode finger logarithum and the element is made smaller than a conventional element by using it.

19. 发明专利

JPH0563498A SURFACE ACOUSTIC WAVE DEVICE 失效
公开(公告)号：JPH0563498A
公开(公告)日：1993-03-12
申请号：JP22564391
申请日：1991-09-05
申请人： HITACHI LTD
发明人： ISOBE ATSUSHI , HOSHINA YOSHINORI , ASAI KENGO , IMURA AKIRA , HIKITA MITSUTAKA
IPC分类号： H03H9/25
摘要： PURPOSE:To easily obtain the surface acoustic wave device reducing a temperature characteristic and a change with the passage of time by fixing a piezoelectric substrate to a stem or a substrate by sandwiching the piezoelectric substrate between two solids. CONSTITUTION:A leaf spring 4 is put under a piezoelectric substrate 1, the piezoelectric substrate 1 is sandwiched by pawls 5 from the upside, the piezoelectric substrate 1 is pressed to the leaf spring 4 by fastening screws 6, and the piezoelectric substrate 1 is fixed by utilizing this elasticity. Thus, since the piezoelectric substrate 1 is fixed to a stem 2 by sandwiching the piezoelectric substrate 1 with the two solids 4 from the surface and the back or from both side faces, etc., any adhesive agent as a gas generating source is not used. Since metal generates no gas differently from silicone resin, no change is generated with the passage of time, and the thermal expansion of the piezoelectric substrate 1 is not blocked by using the elasticity. Further, since the solid springs 4 are utilized in place of the adhesive agent, the device can be easily realized by improving the stem 2 a little. In this case, non-metal such as plastic or ceramic, etc., not to generate gas can be used in place of metal.

20. 发明专利

JPH04192611A SURFACE ACOUSTIC WAVE DEVICE 失效
公开(公告)号：JPH04192611A
公开(公告)日：1992-07-10
申请号：JP17521090
申请日：1990-07-04
申请人： HITACHI LTD
发明人： ISOBE ATSUSHI , HIKITA MITSUTAKA , IMURA AKIRA , HOSHINA YOSHINORI , SAKIYAMA KAZUYUKI
IPC分类号： H03H9/145 , H03H9/25
摘要： PURPOSE:To realize a surface acoustic wave device with an excellent temperature characteristic by making a rate of a change in a propagation speed of a surface acoustic wave with respect to a temperature substantially equal to a thermal expansion rate of a piezoelectric substrate. CONSTITUTION:The device is provided with a piezoelectric substrate 1 through which a surface acoustic wave is propagated, and metallic films 2, 3 to stimulate, to receive or to reflect the surface acoustic wave on the piezoelectric substrate 1. Then a sum of a rate of a chance in a propagation speed of a surface acoustic wave with respect to a temperature while the metallic films 2, 3 are provided onto the piezoelectric substrate 1 and a thermal expansion rate of the piezoelectric substrate 1 is selected smaller than a sum of a rate of a change in a propagation speed of a surface acoustic wave with respect to a temperature while the metallic films 2, 3 are not provided onto the piezoelectric substrate 1 and a thermal expansion rate of the piezoelectric substrate 1. Thus, the temperature characteristic of the amplitude or phase of a surface acoustic wade while the metallic films 2, 3 for an aluminum electrode or the like are provided is improved.

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