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11. 发明专利

JP2013130471A High-temperature superconducting magnetic sensor 有权
标题翻译：高温超导磁传感器
公开(公告)号：JP2013130471A
公开(公告)日：2013-07-04
申请号：JP2011280040
申请日：2011-12-21
申请人： International Superconductivity Technology Center , 公益財団法人国際超電導産業技術研究センター , Hitachi Ltd , 株式会社日立製作所
发明人： TSUKAMOTO AKIRA , ADACHI SEIJI , OSHIKUBO YASUO , TANABE KEIICHI
IPC分类号： G01R33/035 , H01L39/22
CPC分类号： G01R33/0354 , G01R33/035 , H01L39/025 , H01L39/22 , H01L39/225
摘要： PROBLEM TO BE SOLVED: To provide a high-temperature superconducting magnetic sensor 1 which is hard to generate a magnetic flux trap.SOLUTION: The high-temperature superconducting magnetic sensor 1 having superconducting layers DL, UL formed on a substrate and forming a superconducting quantum interference device (SQUID) 2 on the superconducting layers DL, UL includes: a detection coil 6 formed on the superconducting layer UL and directly connected to an inductor 4 of the SQUID 2; and an input coil 5 formed on the superconducting layer DL, connected to the inductor 4 of the SQUID 2 and the detection coil 6 to form a closed loop 7 and magnetically coupled to the inductor 4 of the SQUID 2. At least one turn of the input coil 5 surrounds the inductor 4 of the SQUID 2 or is surrounded by the inductor 4 of the SQUID 2 in planar view. The width of a superconductor forming the inductor 4 of the SQUID 2 is 10 μm or less.
摘要翻译：要解决的问题：提供难以产生磁通阱的高温超导磁传感器1.解决方案：具有形成在衬底上并形成超导量子的超导层DL，UL的高温超导磁传感器1 超导层DL，UL上的干涉装置（SQUID）2包括：形成在超导层UL上并直接连接到SQUID 2的电感器4的检测线圈6; 以及形成在超导层DL上的输入线圈5，其连接到SQUID 2的电感器4和检测线圈6，以形成闭环7，并且与SQUID 2的电感器4磁耦合。至少一圈输入线圈5围绕SQUID 2的电感器4，或者在平面视图中被SQUID 2的电感器4包围。形成SQUID2的电感器4的超导体的宽度为10μm以下。

12. 发明专利

JP2009294062A Magnetic signal measuring method and magnetic signal measuring instrument 审中-公开
标题翻译：磁信号测量方法和磁信号测量仪器
公开(公告)号：JP2009294062A
公开(公告)日：2009-12-17
申请号：JP2008147560
申请日：2008-06-05
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TSUKAMOTO AKIRA , KANDORI AKIHIKO , MIZOGUCHI TAKAKO
IPC分类号： G01N27/72
摘要： PROBLEM TO BE SOLVED: To make it easy to detect the magnetic signal of a foreign matter by eliminating the magnetization of an inspection material by applying a cancelling magnetic field in a reverse direction to the inspection material after the magnetization of the inspection material.
SOLUTION: This magnetic signal measuring instrument is equipped with a feed mechanism capable of moving a sample, a magnetic shield part for forming an inspection region where the sample is inspected, the magnetic sensor installed in the magnetic shield part, a magnetizing magnetic field applying mechanism for applying a magnetizing magnetic field to the sample, a cancelling magnetic field applying mechanism for applying the cancelling magnetic field in the direction reverse to the direction of the magnetizing magnetic field to the sample, and an arithmetic part for recording the result measured by the magnetic sensor within the inspection region as measured data and executing analysis on the basis of the measured data to determine the quality of the sample.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了通过在检查材料的磁化之后通过在与检查材料相反的方向上施加取消磁场来消除检查材料的磁化来容易地检测异物的磁信号。解决方案：该磁信号测量仪器配备有能够移动样品的进给机构，用于形成检查样品的检查区域的磁屏蔽部分，安装在磁屏蔽部分中的磁传感器，磁化磁体用于向样品施加磁化磁场的场施加机构，用于将与抵消磁化方向相反的方向的取消磁场施加到样本的消除磁场施加机构，以及用于记录测量结果的运算部分由检测区域内的磁传感器作为测量数据，并根据测量数据进行分析，以确定样品的质量。版权所有（C）2010，JPO＆INPIT

13. 发明专利

JP2004337478A Magnetic field measuring device 有权
公开(公告)号：JP2004337478A
公开(公告)日：2004-12-02
申请号：JP2003139754
申请日：2003-05-19
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TSUKAMOTO AKIRA , YOKOZAWA KOICHI , SUZUKI DAISUKE , KANDORI AKIHIKO , TSUKADA KEIJI
IPC分类号： A61B5/05 , G01R33/025 , G01R33/035
CPC分类号： G01R33/0358 , G01R33/025
摘要： PROBLEM TO BE SOLVED: To provide a magnetic field measuring device which can cancel efficiently a foreign magnetic field and measure a faint magnetic field. SOLUTION: The magnetic field measuring device comprises a plurality of two-dimensionally disposed measuring magnetic flux meters 3 positioned on the parallel face to the central axis of a cylindrical magnetic shield 1, and a reference magnetic flux meter 4 positioned on the vertical face to the parallel face to the central axis, wherein the meters 3 measure magnetic signals toward the vertical direction to the central axis, and the meter4 measures a parallel foreign magnetic field to the central axis as a reference signal. The magnetic field measuring device is set to subtract a specific factor multiplied reference signal from the signal differences among the neighboring measuring magnetic flux meters 3. COPYRIGHT: (C)2005,JPO&NCIPI

14. 发明专利

JP2004233231A Cryogenic cooling container and magnetic field distribution measuring instrument using the same 审中-公开
公开(公告)号：JP2004233231A
公开(公告)日：2004-08-19
申请号：JP2003022986
申请日：2003-01-31
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SAOTOME ETSUHISA , SAITO KAZUO , TAKAGI KAZUMASA , TSUKAMOTO AKIRA
IPC分类号： G01R33/035 , G01N27/72
摘要： PROBLEM TO BE SOLVED: To provide a cryogenic cooling container for cooling only a superconductive magnetic field sensor by piercing a magnetic probe through the detection loop of the sensor in a non-contact state to fix the same and thermally insulating the sensor and the magnetic probe.
SOLUTION: The cryogenic cooling container has the superconductive magnetic field sensor located in the cryogenic cooling container, which can be internally cooled to a superconductive transfer temperature or below, at one end and fixed to the other end of the cooling block located outside the cryogenic cooling container at its other end, an outer container for forming a vacuum tank outside the cooling container and the magnetic probe fixed to the outer container. Further, a position adjusting support component is joined to the inside of the screw hole formed to the side of the outer container and the cooling block is fixed by one end of the support component. By this constitution, the position of the superconductive magnetic field sensor can be regulated and fixed using the support component and the magnetic probe can be pierced through the detection loop of the superconductive magnetic field sensor in a non-contact state. The positional shift of the superconductive magnetic field sensor due to the thermal shrinkage of the cooling block at the time of cooling can be prevented.
COPYRIGHT: (C)2004,JPO&NCIPI

15. 发明专利

JP2001345488A SUPERCONDUCTING SIGNAL AMPLIFIER CIRCUIT 失效
公开(公告)号：JP2001345488A
公开(公告)日：2001-12-14
申请号：JP2001082755
申请日：2001-03-22
申请人： HITACHI LTD , INT SUPERCONDUCTIVITY TECH
发明人： TAKAGI KAZUMASA , TARUYA YOSHINOBU , SAITO KAZUO , SAOTOME ETSUHISA , FUKAZAWA TOKUMI , TSUKAMOTO AKIRA
IPC分类号： H01L39/22 , H03F19/00
摘要： PROBLEM TO BE SOLVED: To provide a superconducting signal amplifier circuit with which a weak high-frequency signal at several tens GHz generated in a superconducting circuit is increased in voltage amplitude without decreasing frequency for outputting outside from the superconducting circuit. SOLUTION: An output of a superconducting flux quantum circuit where a flux quantum is a carrier for signal is provided with a superconducting joint line for transferring the flux quantum and a branch circuit for generating two flux quantums at the same time from a single flux quantum. The flux quantum signals in the number of a plurality of SQUIDs connected in series are generated, which are inputted into the SQUIDs so that the SQUIDs are switched to a voltage state at the same time. Two SQUIDs are combined to provide a pair while an inductor is partially shared to reduce inductance, so that the output voltage of the SQUIDs connected in series is incresed. A magnetic shield film at the lower part of the SQUID is electrically insulated from ground to prevent signal delay caused by parasitic capacitance.

16. 发明专利

JP2000357823A SUPERCONDUCTING CIRCUIT 失效
公开(公告)号：JP2000357823A
公开(公告)日：2000-12-26
申请号：JP17051799
申请日：1999-06-17
申请人： HITACHI LTD , INT SUPERCONDUCTIVITY TECH
发明人： TARUYA YOSHINOBU , SAITO KAZUO , TAKAGI KAZUMASA , FUKAZAWA TOKUMI , SAOTOME ETSUHISA , TSUKAMOTO AKIRA
IPC分类号： H03K19/195 , H01L39/22
摘要： PROBLEM TO BE SOLVED: To readily mount a resistance element on a circuit at a low resistance by connecting a superconducting junction wherein a magnetic field current of a superconducting junction constituting a resistance element is set to be a current as specified or lower at a specified temperature or lower in series in two or more stages and connecting them in parallel. SOLUTION: A superconducting junction 20 is formed at a position wherein oxide superconducting films 12, 15 are close through an oxide thin film 14. The superconducting junction 20 is connected in series by the oxide superconducting thin film 15 and is connected to the oxide superconducting thin film 12 as a wiring pattern. When a resistance element is constituted, it has a superconducting critical current of 5 to 10 μA at a low temperature of a liquid helium temperature or lower and a zero voltage current is not detected. This is because an electrode between junctions wherein the resistance element 1 is connected in series to allow phase difference of each junction to fluctuate independently even in parallel connection is isolated and phase difference changes mutually independently, and a voltage is generated in each junction even if a superconducting current flows.

17. 发明专利

JPH06177446A SUPERCONDUCTING DEVICE 失效
公开(公告)号：JPH06177446A
公开(公告)日：1994-06-24
申请号：JP33139492
申请日：1992-12-11
申请人： HITACHI LTD
发明人： OKAMOTO MASAKUNI , KABASAWA TAKANORI , TSUKAMOTO AKIRA , FUKAZAWA TOKUMI , AKAMATSU SHOICHI , IMAGAWA KAZUSHIGE , TARUYA YOSHINOBU , TAKAGI KAZUMASA
IPC分类号： H01L39/22
摘要： PURPOSE:To obtain an S-FET which has a higher switching speed by a method wherein doping quantity of impurities is controlled and a gate voltage region to which a surface diffusion has no or very little contribution is produced and the S-FET is operated in the region. CONSTITUTION:When an Nb-Si-Nb system S-FET is composed, Schottky barriers are formed in both the surfaces between a source 1 and a semiconductor layer 5 and between a drain 6 and the superconductor layer 5 by the difference in work functions. In order to reduce the thicknesses of the Schottky barriers, high impurity concentration doped layers 2 are provided in the semiconductor layer near the surfaces. If the whole semiconductor layer 5 is doped with impurities whose type is different from the type of carriers, the gate voltage dependency of the mobility of the carriers is varied in accordance with the doping quantity of the impurities. Therefore, as the impurity concentration necessary for having a peak gate voltage 1V is valued at approximately 1X10 cm , by selecting this value, an S-FET which facilitates a higher switching speed than a conventional constitution with the gate voltage not higher than 1V can be obtained.

18. 发明专利

JPH05226711A SUPERCONDUCTIVE TRANSISTOR AND ITS OPERATING METHOD 失效
公开(公告)号：JPH05226711A
公开(公告)日：1993-09-03
申请号：JP2355892
申请日：1992-02-10
申请人： HITACHI LTD
发明人： TARUYA YOSHINOBU , FUKAZAWA TOKUMI , KABASAWA TAKANORI , AKAMATSU SHOICHI , TSUKAMOTO AKIRA , HIRATANI MASAHIKO , SUGA MITSUO , OKAMOTO MASAKUNI
IPC分类号： H01L39/22
摘要： PURPOSE:To provide a superconductive transistor, wherein a superconductive current can be gotten to an optional distance between electrodes. CONSTITUTION:This is a superconductive transistor which has a channel layer 52 consisting of copper oxide material, two pieces of source and drain superconductive electrodes 53 and 54 consisting of copper oxide material, and a gate electrode 56 being provided on he channel layer through an oxide insulating film and being one for controlling the transition between the superconductive condition of the channel layer and the normal conductive condition. This superconductive transistor is operated by applying voltage to the gate electrode 56 and changing the normal conductive condition of the channel layer 52 to the superconductive condition, and letting a superconductive current flow between two pieces of superconductive electrodes or performing its reverse.

19. 发明专利

JPH05218514A PERSISTENT CURRENT SWITCH DEVICE 失效
公开(公告)号：JPH05218514A
公开(公告)日：1993-08-27
申请号：JP1591192
申请日：1992-01-31
申请人： HITACHI LTD
发明人： TARUYA YOSHINOBU , FUKAZAWA TOKUMI , KABASAWA TAKANORI , TAKAGI KAZUMASA , TSUKAMOTO AKIRA , HIRATANI MASAHIKO , SUGA MITSUO , OKAMOTO MASAKUNI
IPC分类号： H01L39/22 , H01F6/00 , H01L39/16
摘要： PURPOSE:To realize a persistent current switch which has stability and reproducibility, ensures high current level and critical current density and can carry out switching at a velocity of microsecond or less when a superconducting switch is used as a persistent current switch of a superconducting magnet. CONSTITUTION:An oxide superconducting film and an oxide normal conducting film 2 are formed on an insulating substrate 1, the normal conductive film and the superconducting film are laminated, the normal conducting film is separated into two regions as a source electrode 3 and a drain electrode 4. A distance between the source electrode 3 and the drain electrode 4 is 0.5 to 1mum. A superconducting element constituted by connecting two superconducting films electrically through the normal conducting film 2 is formed. A third electrode film 6 having conductivity is arranged in a region wherein a superconducting film does not exist in the superconducting element. A persistent current switch device is made by connecting the switch element parallel to a superconducting magnet consisting of an oxide linear material.

20. 发明专利

JPH02196008A MULTI-SOURCE VAPOR DEPOSITION DEVICE 失效
公开(公告)号：JPH02196008A
公开(公告)日：1990-08-02
申请号：JP1392189
申请日：1989-01-25
申请人： HITACHI LTD
发明人： TSUKAMOTO AKIRA , AIDA TOSHIYUKI , IMAGAWA KAZUSHIGE , FUKAZAWA TOKUMI , MIYAUCHI KATSUMI
IPC分类号： C01B13/28 , C01B13/20 , C01G1/00 , C01G3/00 , C23C14/24 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To restrain the decrease of raw material and to control precisely by separating plural vapor deposition source with partition plates to prevent the interference to the monitor of film thickness, and disposing base plates so that they can move above the vapor deposition sources. CONSTITUTION:Two or more vapor coating source raw materials 19, such as Ba, are received in K-cells 18 in a vacuum vessel 26 of multi-source vapor deposition device, and partition plates 23 are fixed. Then, base plates 12 of Si, etc., are fixed to a rotary holder 10, and the inside of the vessel 26 is evacuated to about 10 Torr by a pump 28. Then, the base plates 12 are heated to 400-900 deg.C by a heater 9 and rotated with 10-60r.p.m. Then, the reactive gas O2 of high purity is introduced, the microwave of 60-300W is generated through a magnetron 1, the critical state is made by a magnet 6, and O2-plasma is generated in a discharge tube 5. After the vaporization of raw material 19, the vapor deposition accumulation velocity and the plasma generation are put in stable states, a shutter 11 is opened to coat the base plates 12 for about 90 minutes. Then, the shutter 11 is closed, an electric power source 34 is turned off, and the base plates 12 is cooled to produce the film of high temp. oxide superconductive body having critical temp. of not lower than the temp. of liquefied nitrogen.

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