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    • 12. 发明专利
    • GAS DETECTING SENSOR
    • JP2000171422A
    • 2000-06-23
    • JP34550198
    • 1998-12-04
    • FUJIKIN KKOMI TADAHIRO
    • OMI TADAHIROKAWADA KOJIIKEDA SHINICHIMORIMOTO AKIHIROMINAMI YUKIOKOMEHANA KATSUNORIMOTOIDEN AKIOENOHARA TAKAAKIHIRANO TAKANORIFUJII YUICHI
    • G01N25/32G01N27/00G01N27/16G01N33/00
    • PROBLEM TO BE SOLVED: To obtain a sensor which is high in reliability and superior in stability by a method wherein a first detecting sensor composed of a thermocouple in which one end side of a metal of a different kind is fixed and bonded to the backside of a diaphragm comprising a platinum coating film on a gas contact face is provided and a second detecting sensor whose structure is identical to that of the first detecting sensor and which does not comprise a platinum coating film is provided. SOLUTION: A detecting sensor 2, a detector body 3 and connecting cables 4 which connect both compose a combustible-gas detector 1. A first detecting sensor 5 and a second detecting sensor 6 comprise the detecting sensor 2. A first temperature detector 3a and a second temperature detector 3b which detect temperature signals from the first and second detecting sensors 5, 6, a temperature-difference detector 3e and the like compose the detector body 3. The first gas detecting sensor 5 is composed of a thermocouple or the like in which a platinum coating film film is formed on the gas contact face of a barrier film and in which one end part of a metal of a different kind is fixed and bonded to the backside. The second detecting sensor 6 is constituted so as to remove a platinum coating film from the first detecting sensor 5, and other constitutions of it are identical to those of the first detecting sensor 5.
    • 14. 发明专利
    • REACTION FURNACE FOR GENERATING WATER
    • JP2000072405A
    • 2000-03-07
    • JP24787498
    • 1998-09-02
    • OMI TADAHIROFUJIKIN KK
    • OMI TADAHIROKAWADA KOJIMINAMI YUKIOHIRAO YOSHIYUKIIKEDA SHINICHI
    • H01L21/31B01J23/42C01B5/00H01L21/316
    • PROBLEM TO BE SOLVED: To provide a reaction furnace for generating water capable of stably attaining water generation reaction rate exceeding 99% even under the condition that the temp. of the furnace is =1000 sccm. SOLUTION: The inside of a reaction furnace main body 1 is partitioned into two of upper and lower chambers 14 and 15 by a gas permeable diffusion filter 2. A gaseous starting material being a gaseous mixture of hydrogen with oxygen is fed to the upper part 1st chamber 14 from a gaseous starting material feed port 4 formed on the top wall 12 of the reaction furnace main body 1 and introduced into the lower part 2nd chamber 15 while being diffused by a 1st reflection plate 3 and the diffusion filter 2. Hydrogen and oxygen introduced to the 2nd chamber 15 radically react with each other by bringing it to contact with a platinum catalytic film 5 formed on the peripheral wall 11 and the bottom wall 13 of the reaction furnace main body 1 and the produced water is taken out from a water take-out port 7 of the bottom wall 13. The reaction of hydrogen with oxygen occurs mainly in a narrow space 15a between a 2nd reflection plate 6 and the bottom wall having the size that the outer peripheral part is adjacent to the inner surface of the peripheral wall 11 of the reaction furnace main body 1.
    • 17. 发明专利
    • PRESSURE DETECTOR
    • JPH1082707A
    • 1998-03-31
    • JP23870696
    • 1996-09-10
    • OMI TADAHIROFUJIKIN KK
    • OMI TADAHIRODOI RYOSUKENISHINO KOJIIKEDA SHINICHI
    • G01L9/04G01L9/00G01L19/00G01L19/06
    • PROBLEM TO BE SOLVED: To eliminate the possibility of lowering the quality of product even a pressure detector is applied to a semiconductor production process, by forming a passive film on the gas-contact face of a stainless steel diaphragm having specified dimensions provided on a diaphraqm base. SOLUTION: A diaphragm 3 of about 50μm thick having an inside diameter of about 10mm is made of stainless steel and has a gas-contact face 3a on which a passive film 3b of chromium oxide, a fluorinated passive film 3b or a mixed oxide passive film 3b of aluminum oxide and chromium oxide is formed. After forming the diaphragm 3 integrally with a diaphragm base 4, the diaphragm base 4 formed with the passive film 3b and a sensor base 1 are abutted against the gas contact face 3a of the diaphragm 3 and the entire circumference of the side wall face is welded 8. Subsequently, an oil injection hole 1b is filled with a pressure transmission medium (silicon oil) 5 and a sealing body (ball) 6 is welded 10 to the sensor base 1 thus sealing the silicon oil 5 hermetically.