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    • 13. 发明专利
    • Transparent substrate treatment method, and pressure-sensitive adhesive for transparent substrate treatment
    • 透明基板处理方法和用于透明基板处理的压敏粘合剂
    • JP2013213206A
    • 2013-10-17
    • JP2013044419
    • 2013-03-06
    • Sekisui Chem Co Ltd積水化学工業株式会社
    • TONEGAWA TORUASO TAKAHIRO
    • C09J5/06C09J4/02C09J7/02C09J183/07
    • PROBLEM TO BE SOLVED: To provide a transparent substrate treatment method, capable of surely protecting a transparent substrate by a support plate and easily peeling the support plate by irradiation with light even after a treatment step of performing a treatment accompanied by heating to 150°C or higher, and to provide a pressure-sensitive adhesive for transparent substrate treatment which can be used for the transparent substrate treatment method.SOLUTION: A transparent substrate treatment method includes: a support plate fixing step of fixing a transparent substrate to a support plate through a pressure-sensitive adhesive for transparent substrate treatment; a transparent substrate treatment step of performing a treatment accompanied by heating to 150°C or higher on the surface of the transparent substrate fixed to the support plate; and a support plate peeling step of irradiating the transparent substrate after the treatment with light to harden the pressure-sensitive adhesive for transparent substrate treatment, and peeling the support plate from the transparent substrate. The pressure-sensitive adhesive for transparent substrate treatment includes an adhesive component, a photopolymerization initiator, and a silicone compound having a functional group crosslinkable with the adhesive component.
    • 要解决的问题:提供一种透明基板处理方法,即使在进行了加热至150℃的处理步骤的处理步骤之后,也能够通过支撑板确保保护透明基板,并且通过照射轻易剥离支撑板 以上,并且提供可用于透明基板处理方法的透明基板处理用粘合剂。解决方案:透明基板处理方法包括:将透明基板固定到支撑板上的支撑板固定步骤 用于透明基板处理的压敏粘合剂; 透明基板处理步骤,在固定在所述支撑板上的所述透明基板的表面上进行150℃以上的加热处理; 以及支撑板剥离步骤,用光照射所述透明基板,使所述粘合剂硬化,进行透明基板处理,并从所述透明基板剥离所述支撑板。 用于透明基板处理的压敏粘合剂包括粘合剂组分,光聚合引发剂和具有可与粘合剂组分交联的官能团的硅氧烷化合物。
    • 14. 发明专利
    • Semiconductor component manufacturing method
    • 半导体元器件制造方法
    • JP2013157470A
    • 2013-08-15
    • JP2012017029
    • 2012-01-30
    • Sekisui Chem Co Ltd積水化学工業株式会社
    • SUGITA TAIHEIASO TAKAHIROTONEGAWA KYO
    • H01L21/56C09J5/00C09J7/02C09J11/06C09J201/00H01L25/04H01L25/18
    • H01L24/96H01L21/568H01L2924/181H01L2924/00
    • PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor component which allows easy detachment of a support substrate after encapsulation by a molding resin.SOLUTION: In a manufacturing method of a semiconductor component 6 in which a plurality of semiconductor chips 1 are mounted on a support substrate 2 via a double-sided adhesive tape 3 and the support substrate 2 and the double-sided adhesive tape 3 are detached by irradiation of light from the support substrate 2 side of the semiconductor component 6 encapsulated by an encapsulation resin 5, the double-sided adhesive tape 3 includes: a gas-generating agent-containing photo-curing adhesive layer 32 which contains a gas-generating agent that generates gas by irradiation of light, and which is arranged on a base material 31 on the side to be adhered to the support substrate 2; and a high-cross-linkage low-polarity photo-curing adhesive layer 33 which has a degree of cross-linkage of 70-90% and a surface polarity of 45 dyn/cmor less, and which is arranged on the base material 31 on the side to be adhered to the semiconductor chip 1.
    • 要解决的问题:提供一种半导体部件的制造方法,其能够通过模制树脂封装后容易地分离支撑基板。解决方案:在其中安装有多个半导体芯片1的半导体部件6的制造方法中 通过双面胶带3和支撑基板2和双面胶带3在支撑基板2上的照射被从由密封树脂5包封的半导体部件6的支撑基板2侧照射, 双面胶带3包括:含气体发生剂的光固化粘合剂层32,其含有通过照射产生气体的气体发生剂,并且其布置在侧面的基材31上 粘附到支撑基板2上; 以及交联度为70〜90%,表面极性为45dyn / cm以下的高交联性低极性光固化粘合剂层33,并且配置在基材31上 要粘附到半导体芯片1的一侧。
    • 17. 发明专利
    • Inorganic fine particle dispersed paste composition
    • 无机细颗粒分散的糊剂组合物
    • JP2011122129A
    • 2011-06-23
    • JP2010070149
    • 2010-03-25
    • Sekisui Chem Co Ltd積水化学工業株式会社
    • INAOKA MIKIASO TAKAHIROYAMAUCHI KENJIMIYAZAKI HIROKOSUGITA TAIHEI
    • C09D11/00C08F220/10C09D7/12C09D133/00H01B1/22
    • PROBLEM TO BE SOLVED: To provide an inorganic fine particle dispersed paste composition having high viscosity, excellent printability or dispense printability and capable of being fired at a low temperature. SOLUTION: The inorganic fine particle dispersed paste composition contains a gelated particle containing a cross-linked (meth)acrylic resin, the inorganic fine particle and an organic solvent. The gelated particle containing the cross-linked (meth)acrylic resin is swelled with the organic solvent, has ≤10 μm particle diameter and the cross-linked (meth)acrylic resin is a copolymer having a segment orienting in a single functional (meth)acrylic monomer and a segment originating in a multi-functional (meth)acrylic monomer. COPYRIGHT: (C)2011,JPO&INPIT
    • 要解决的问题:提供一种具有高粘度,优异的可印刷性或分配印刷性并能够在低温下烧制的无机细颗粒分散糊剂组合物。 解决方案:无机细颗粒分散糊组合物含有含有交联(甲基)丙烯酸树脂,无机细颗粒和有机溶剂的凝胶化颗粒。 含有交联的(甲基)丙烯酸树脂的凝胶化颗粒与有机溶剂一起膨胀,粒径≤10μm,交联的(甲基)丙烯酸树脂是具有单官能(甲基)丙烯酸系单体的链段取向的共聚物, 丙烯酸类单体和源自多官能(甲基)丙烯酸类单体的链段。 版权所有(C)2011,JPO&INPIT
    • 19. 发明专利
    • Processing method of wafer
    • WAFER的处理方法
    • JP2014053623A
    • 2014-03-20
    • JP2013211215
    • 2013-10-08
    • Sekisui Chem Co Ltd積水化学工業株式会社
    • TONEGAWA KYOASO TAKAHIROUEDA KOZOYABUGUCHI HIROHIDE
    • H01L21/02C09J11/06C09J201/00H01L21/683
    • C30B33/00C09J5/00C09J2203/326C09J2205/302C09J2205/31C30B29/06H01L21/6835H01L21/6836H01L2221/68327H01L2221/6834H01L2221/68381
    • PROBLEM TO BE SOLVED: To provide a processing method of wafer for processing a wafer while being fixed to a support plate via an adhesive composition, in which high production efficiency is achieved.SOLUTION: A processing method of wafer includes a support plate fixing step for fixing a wafer to a support plate via an adhesive composition containing an adhesive component, and a gas generating agent generating gas when being irradiated with UV ray, a wafer processing step for processing the wafer fixed to the support plate, and a support plate peeling step for peeling the support plate from the wafer by irradiating the wafer thus processed with UV ray thereby generating gas from the gas generating agent. In the support plate peeling step, the wafer is irradiated with spot-like or linear UV ray having irradiation intensity of 100 mW/cmor more so as to scan the whole surface.
    • 要解决的问题:提供一种通过经过粘合剂组合物固定到支撑板上的晶片加工方法,该粘合剂组合物实现了高生产效率。解决方案:晶片的加工方法包括:支撑板固定步骤,用于 通过含有粘合剂组分的粘合剂组合物将晶片固定到支撑板上,以及当用紫外线照射时产生气体的气体发生剂,用于处理固定到支撑板上的晶片的晶片加工步骤和支撑板剥离步骤 用于通过用紫外线照射如此处理的晶片从而从晶片剥离支撑板,从而从气体发生剂产生气体。 在支撑板剥离工序中,利用具有100mW / cm 2以上的照射强度的斑点状或线状的紫外线照射晶片,以扫描整个表面。