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11. 发明专利

JP2013120935A Method of characterizing semiconductor light-emitting device on the basis of features of product wafer 有权
标题翻译：基于产品特征的半导体发光器件表征方法
公开(公告)号：JP2013120935A
公开(公告)日：2013-06-17
申请号：JP2012249254
申请日：2012-11-13
申请人： Ultratech Inc , ウルトラテックインク
发明人： HAWRYLUK M ANDREW , DAVID OWEN
IPC分类号： H01L21/66 , H01L33/00
CPC分类号： G01R31/2635
摘要： PROBLEM TO BE SOLVED: To provide a method of characterizing a semiconductor light-emitting device (LED) on the basis of the characteristics of a product wafer.SOLUTION: The method of characterizing a semiconductor light-emitting device includes a step for measuring at least one characteristic, such as the curvature or the device layer stress, of a product wafer. The relationship of at least one characteristic and the emission wavelength of an LED die formed of a product wafer is established. According to the relationship, emission wavelength from an LED structure formed on the device layer of a product wafer formed similarly is predicted. This method may also be used for characterizing a product wafer, more specifically an LED structure formed on the product wafer, and may be used for process control when manufacturing a large capacity LED.
摘要翻译：要解决的问题：提供基于产品晶片的特性来表征半导体发光器件（LED）的方法。解决方案：表征半导体发光器件的方法包括用于测量产品晶片的至少一个特性（例如曲率或器件层应力）的步骤。建立由产品晶片形成的LED管芯的至少一个特性与发射波长的关系。根据该关系，预测了形成在类似地形成的产品晶片的器件层上的LED结构的发射波长。该方法还可以用于表征产品晶片，更具体地说是形成在产品晶片上的LED结构，并且可以在制造大容量LED时用于过程控制。版权所有（C）2013，JPO＆INPIT

12. 发明专利

JP2013048236A FAST THERMAL ANNEALING FOR GaN LEDS 审中-公开
标题翻译： GaN LED的快速热退火
公开(公告)号：JP2013048236A
公开(公告)日：2013-03-07
申请号：JP2012179993
申请日：2012-08-15
申请人： Ultratech Inc , ウルトラテックインク
发明人： WANG YUN , HAWRYLUK M ANDREW
IPC分类号： H01L33/36 , H01L21/265 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a GaN light-emitting diode which realizes enhanced output power, lower turn-on voltage and reduced series resistance.SOLUTION: A method includes forming a GaN multilayer structure 30 having an n-GaN layer 40 and a p-GaN layer 50 between which an active layer 60 is sandwiched. The method also includes performing fast thermal annealing, having time duration of 10 seconds or shorter, of the p-GaN layer 50 using either a laser or a flash lamp. The method further includes forming a transparent conducting layer 70 on the GaN multilayer structure 30, and adding a p-contact 90p to the transparent conducting layer 70 and an n-contact 90n to the n-GaN layer 40.
摘要翻译：解决的问题：提供一种实现增强输出功率，降低接通电压和降低串联电阻的GaN发光二极管的制造方法。解决方案：一种方法包括形成具有n-GaN层40和p-GaN层50的GaN多层结构30，其间夹有有源层60。该方法还包括使用激光或闪光灯执行p-GaN层50的持续时间为10秒或更短的快速热退火。该方法还包括在GaN多层结构30上形成透明导电层70，并将p型接触90p加到n-GaN层40上的透明导电层70和n型接触90n上。 C）2013，JPO＆INPIT

13. 发明专利

JP2013120936A Ganled laser anneal with reduced pattern effect 审中-公开
标题翻译：具有减少图案效果的GANLED LASER ANNEAL
公开(公告)号：JP2013120936A
公开(公告)日：2013-06-17
申请号：JP2012249286
申请日：2012-11-13
申请人： Ultratech Inc , ウルトラテックインク
发明人： HAWRYLUK M ANDREW , WANG YUN
IPC分类号： H01L33/32
CPC分类号： H01L33/32 , H01L33/0075 , H01L33/0095 , H01L33/38
摘要： PROBLEM TO BE SOLVED: To provide a method for laser-annealing a GaN light emitting diode (LED) with a reduced pattern effect.SOLUTION: The method has a step of forming plural elongated conductive structures 70E having a long dimension and a short dimension and spaced from each other substantially in a long dimension direction on a n-type GaN 50 or a surface 52 of a p-type GaN layer of a GaN LED structure 10. Also, it has a step of generating a p-polarized anneal laser beam 120 having an anneal wavelength longer than the short dimension. Also, it has a step of directing the anneal laser beam to a conductive structure so that a polarization direction 122 is orthogonal to the long dimension of the conductive structure, and irradiating the n-type GaN layer or the p-type GaN layer of the GaN LED structure with the p-polarized anneal laser beam via the conductive structure.
摘要翻译：要解决的问题：提供一种减少图案效应的GaN发光二极管（LED）的激光退火方法。解决方案：该方法具有在n型GaN 50或p的表面52上形成具有长尺寸和短尺寸并且基本上在长尺寸方向上彼此间隔开的多个细长导电结构70E的步骤 GaN LED结构10的GaN型GaN层。此外，其具有产生退火波长比短尺寸长的p极化退火激光束120的步骤。此外，它具有将退火激光束引导到导电结构的步骤，使得偏振方向122与导电结构的长尺寸正交，并且照射n型GaN层或p型GaN层 GaN LED结构与p偏振退火激光束通过导电结构。版权所有（C）2013，JPO＆INPIT

14. 发明专利

JP2013048237A Programmable light-emitting body used for photolithography system 有权
标题翻译：用于光刻机系统的可编程发光体
公开(公告)号：JP2013048237A
公开(公告)日：2013-03-07
申请号：JP2012179995
申请日：2012-08-15
申请人： Ultratech Inc , ウルトラテックインク
发明人： BORISLAV ZLATANOV , HAWRYLUK M ANDREW
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： G03F7/70066 , G02B26/0833 , G03F7/70558
摘要： PROBLEM TO BE SOLVED: To provide a programmable light-emitting body used for photolithography, which causes no vibrations of an optical system, has no possibility of adverse effects on a mean time between failures (MTBF) of a photolithography system, and irradiates a reticle having a reticle field through an optical path.SOLUTION: A programmable light-emitting body 10 used for a photolithography system 200 comprises: a light source 310; a first optical system 340 having a light uniformizing element; a programmable micro-mirror device 350; and a second optical system 360 that forms an irradiation field for irradiating a reticle 210. The programmable micro-mirror device 350 can realize shutter and edge-exposure-blocking functions that have previously been required for relatively large mechanical devices. Methods relating to uniformity improvement of the irradiation field using the programmable light-emitting body 10 are also disclosed.
摘要翻译：要解决的问题：为了提供用于光刻的可编程发光体，其不会导致光学系统的振动，不可能对光刻系统的平均故障间隔时间（MTBF）和通过光路照射具有光罩场的掩模版。解决方案：用于光刻系统200的可编程发光体10包括：光源310; 具有光均匀化元件的第一光学系统340; 可编程微镜装置350; 以及第二光学系统360，其形成用于照射标线210的照射场。可编程微镜装置350可以实现先前对于相对大的机械装置所需要的快门和边缘曝光阻挡功能。还公开了使用可编程发光体10照射场的均匀性改善的方法。版权所有（C）2013，JPO＆INPIT

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