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101. 发明专利

JP2007221149A Plasma processing method and method of manufacturing semiconductor device 有权
标题翻译：等离子体处理方法和制造半导体器件的方法
公开(公告)号：JP2007221149A
公开(公告)日：2007-08-30
申请号：JP2007046121
申请日：2007-02-26
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： SNIL WIKURAMANAYAKA , DOI HIROSHI
IPC分类号： H01L21/205 , C23C14/35 , C23C16/44 , H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing method capable of generating an almost uniform magnetic flux distribution pattern under the entire rf electrode surface and implementing uniform wafer processing rate, and a manufacturing method of a semiconductor device. SOLUTION: The plasma processing method is a plasma processing method for generating capacitive coupled plasma in a space near the surface of wafer 23 mounted on a lower electrode 2 and processing the wafer. A plurality of magnets 6 for making a point cusp magnetic field arranged on the exterior side of an upper electrode 1 facing the lower electrode or the inside is arranged extendedly in the same magnet arrangement in a direction extending in the peripheral region. A point cusp magnetic field 7 using a uniform magnetic flux distribution pattern is made near the inner side surface of the upper electrode. The wafer is processed by generating content connection type plasma based on the point cusp magnetic field 7. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供能够在整个rf电极表面产生几乎均匀的磁通分布图案并且实现均匀的晶片处理速率的等离子体处理方法以及半导体器件的制造方法。解决方案：等离子体处理方法是用于在安装在下电极2上的晶片23的表面附近的空间中产生电容耦合等离子体并处理晶片的等离子体处理方法。配置在面向下部电极或内部的上部电极1的外侧的点尖点磁场的多个磁铁6沿着在周边区域延伸的方向延伸配置在相同的磁体配置中。在上电极的内侧表面附近形成使用均匀磁通分布图案的点尖点磁场7。基于点尖点磁场7，通过产生内容连接型等离子体来处理晶片。版权所有（C）2007，JPO＆INPIT

102. 发明专利

JP2007100219A High temperature reflow sputtering system and high temperature reflow sputtering method 有权
标题翻译：高温反射溅射系统和高温反射溅射方法
公开(公告)号：JP2007100219A
公开(公告)日：2007-04-19
申请号：JP2007000012
申请日：2007-01-04
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： KOBAYASHI MASAHIKO , TAKAHASHI NOBUYUKI
IPC分类号： C23C14/34 , H01L21/285 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide a technique for high temperature reflow sputtering technique capable of sufficiently filling a metallic material into a hole even in the case a substrate is heated at a lower temperature.
SOLUTION: One of a plurality of treatment chambers airtightly connected to the circumference of a separation chamber 1 is a sputtering chamber 4, and two stage film deposition is performed. In the first stage, the distance between a target 42 and a substrate 9 is defined as the long first distance, so as to produce a base thin film 93 at the inside face of a hole 90, and, in the second stage, the distance between the target 42 and the substrate 9 is defined as the short second distance, and the substrate 9 is heated by a heater 441, thus the thin film is made to reflow, so as to be filled into the hole 90. The separation chamber 1 is provided with a panel 12 cooled to 130K to 50K by a refrigerator 13, and an impure gas is condensed on the surface of the panel 12.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：即使在基板在较低温度下被加热的情况下，也可以提供能够将金属材料充分地填充到孔中的高温回流溅射技术。解决方案：气密地连接到分离室1的圆周上的多个处理室中的一个是溅射室4，并且执行两级膜沉积。在第一阶段中，目标42与基板9之间的距离被定义为长的第一距离，以便在孔90的内表面产生基底薄膜93，在第二阶段中，距离将靶42与基板9之间的距离定义为短的第二距离，并且通过加热器441加热基板9，由此使薄膜回流以便填充到孔90中。分离室1 设置有通过冷藏库13冷却至130K至50K的面板12，并且不纯气体在面板12的表面上被冷凝。版权所有（C）2007，JPO＆INPIT

103. 发明专利

JP2007036285A Apparatus and method for high-temperature reflow sputtering 有权
标题翻译：高温反射溅射的装置和方法
公开(公告)号：JP2007036285A
公开(公告)日：2007-02-08
申请号：JP2006271253
申请日：2006-10-02
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： KOBAYASHI MASAHIKO , TAKAHASHI NOBUYUKI
IPC分类号： H01L21/285 , C23C14/34 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide a technique for high-temperature reflow sputtering capable of thoroughly embedding metal material in a hole even when the substrate is heated at a lower temperature.
SOLUTION: A control unit not shown in the figure allows the heat transfer efficiency between the substrate 9 and a substrate holder 44 to be low by not operating an electrostatic chucking mechanism 49 in the first step of forming a film in two steps, and allows the heat transfer efficiency between the substrate 9 and the substrate holder 44 to be high by operating the electrostatic chucking mechanism 49 in the second step, thereby heating the substrate 9 efficiently by a heater. Since a thick base thin-film 93 is formed on the inner surface of the hole 90 in the first step, the metal material is thoroughly embedded in the hole 90 by reflowing the metal material at a relatively low temperature in the second step.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供即使在较低温度下加热基板时也能将金属材料彻底地嵌入孔中的高温回流溅射技术。解决方案：图中未示出的控制单元通过在两步形成膜的第一步骤中不通过不操作静电吸附机构49来使基板9和基板保持件44之间的传热效率降低，并且通过在第二步骤中操作静电吸附机构49使基板9和基板保持件44之间的传热效率高，从而通过加热器有效地加热基板9。由于在第一步骤中在孔90的内表面上形成厚的基底薄膜93，所以通过在第二步骤中以较低的温度回流金属材料，将金属材料彻底地嵌入到孔90中。版权所有（C）2007，JPO＆INPIT

104. 发明专利

JP2007019529A Device for forming semiconductor thin film 审中-公开
标题翻译：形成半导体薄膜的器件
公开(公告)号：JP2007019529A
公开(公告)日：2007-01-25
申请号：JP2006228727
申请日：2006-08-25
申请人： Canon Anelva Corp , Nec Corp , Sumitomo Heavy Ind Ltd , キヤノンアネルバ株式会社 , 住友重機械工業株式会社 , 日本電気株式会社
发明人： TANABE HIROSHI , AKASHI TOMOYUKI , WATABE YOSHI
IPC分类号： H01L21/268 , H01L21/02 , H01L21/20 , H01L21/265 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a device for forming a semiconductor thin film which projection-exposes an exposure pattern formed on a photo-mask onto a semiconductor thin film on a substrate mounted on a substrate stage, and for upgrading the quality of a given region of the semiconductor thin film. SOLUTION: A device for forming a semiconductor thin film projection-exposes an exposure pattern formed on a photo-mask onto a semiconductor thin film on a substrate mounted on a substrate stage, and upgrades the quality of a given region of the semiconductor thin film. The exposure pattern is sequentially scanned by driving separately the photo-mask or the substrate stage. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于形成半导体薄膜的装置，其将形成在光掩模上的曝光图案投影到安装在基板台上的基板上的半导体薄膜上，并且用于提高质量的半导体薄膜的给定区域。解决方案：用于形成半导体薄膜投影的装置将形成在光掩模上的曝光图案暴露在安装在基板台上的基板上的半导体薄膜上，并且提高半导体的给定区域的质量薄膜。通过单独驱动光掩模或基板台来依次扫描曝光图案。版权所有（C）2007，JPO＆INPIT

105. 发明专利

JP2006228909A Surface treatment method and surface treatment system using gas decomposing apparatus 有权
标题翻译：使用气体分解装置的表面处理方法和表面处理系统
公开(公告)号：JP2006228909A
公开(公告)日：2006-08-31
申请号：JP2005039765
申请日：2005-02-16
申请人： Canon Anelva Corp , Foi:Kk , Kanto Denka Kogyo Co Ltd , National Institute Of Advanced Industrial & Technology , Randomaaku Technol:Kk , Taiyo Nippon Sanso Corp , キヤノンアネルバ株式会社 , 大陽日酸株式会社 , 株式会社エフオーアイ , 株式会社ランドマークテクノロジー , 独立行政法人産業技術総合研究所 , 関東電化工業株式会社
发明人： NAKAGAWA KOJIN , SATO TOMOKAZU , SEKIYA AKIRA
IPC分类号： H01L21/205 , C23C16/44 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To ensure reliability of an electrode used for generating a plasma in a vacuum container and to surely prevent emission of a gas with high global warming potential.
SOLUTION: The method is used to clean a vacuum treatment apparatus (plasma CVD apparatus) 10 for film formation of a substrate 12 within a vacuum container 11, and it includes a step to introduce a non-reactive gas (inert gas) to a gas decomposing apparatus 24 separately provided from the vacuum container 11, and to generate a plasma by using the non-reactive gas; and a step to introduce a reactive gas (nitrogen trifluoride NF
3 ) into the gas decomposing apparatus 24 where the plasma is generated by the non-reactive gas, to separate it, and to produce active species (atom-like fluorine F). The active species (atom-like fluorine F) are introduced into the vacuum container 11 for cleaning.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了确保用于在真空容器中产生等离子体的电极的可靠性，并且可靠地防止具有高全球变暖潜能的气体的排放。解决方案：该方法用于清洁在真空容器11内用于成膜基板12的真空处理装置（等离子体CVD装置）10，并且其包括引入非反应性气体（惰性气体）分配给从真空容器11提供的气体分解装置24，并通过使用非反应性气体产生等离子体; 以及将反应性气体（三氟化氮NF SB 3）引入气体分解装置24中的步骤，其中通过非反应性气体产生等离子体，将其分离，并产生活性物质（原子类氟F）。将活性物质（原子状氟F）引入真空容器11中进行清洗。版权所有（C）2006，JPO＆NCIPI

106. 发明专利

JP2006221852A INDUCTION COUPLED PLASMA GENERATOR 审中-公开
公开(公告)号：JP2006221852A
公开(公告)日：2006-08-24
申请号：JP2005031817
申请日：2005-02-08
申请人： CANON ANELVA CORP
发明人： NAKAGAWA KOJIN
IPC分类号： H05H1/46 , H01L21/304 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide an induction coupled plasma generator in which plasma density unevenness can be improved by properly controlling the ratio of high frequency electric current that flows in two or more of high frequency antennae outside a vacuum window. SOLUTION: This induction coupled plasma generating device is equipped with a vacuum container 11 in order to treat a substrate 21 to form the plasma 26, a vacuum window 12 installed at the vacuum container wall part, the high frequency antenna 13 consisting of two or more of antenna parts arranged at the outside of the vacuum window, a high frequency power source 14 to supply high frequency to the high frequency antenna, and a substrate holder 22. Furthermore, two or more of the antenna parts have wire connection structures connected in series, in which capacitors 31A, 31B are connected in parallel at least to one of the antenna parts. Capacitance of the capacitor is set so that the ratio of the high frequency electric current that flows in the two or more of antenna parts may be adjusted optimally. COPYRIGHT: (C)2006,JPO&NCIPI

107. 发明专利

JP2006203084A Method and device for injecting liquid formulation 有权
标题翻译：用于注射液体配方的方法和装置
公开(公告)号：JP2006203084A
公开(公告)日：2006-08-03
申请号：JP2005014909
申请日：2005-01-21
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： DOI YOSHIYUKI , SASAKI NAOKI , MATSUMURA YASUHARU
IPC分类号： H01L21/02
摘要： PROBLEM TO BE SOLVED: To reduce sticking of an adhesive to the outer surface of a laminated wafer for higher injection efficiency and perfect injection, in injecting a liquid formulation into the gap between of wafers of a laminated wafer.
SOLUTION: A liquid formulation L is held in a liquid formulation container 3 in an injection chamber 2, which is raised by a surface tension force and is protruded while not run over from the edge of the liquid formulation container 3. The protruded part is continuous across the entire circumference along the peripheral edges of laminated wafers 11 and 12. The injection chamber 2 is made to be vacuum pressure, so that the entire circumference of the peripheral edges of the laminated wafers 11 and 12 contact the liquid formulation L at the part of protruding and continuing in entire circumference, closing the peripheral edge opening. Here, banks 61 and 62 so fit the outer surface that the liquid formulation L does not spread along the outer surfaces of the laminated wafers 11 and 12. Then, the inside of injection chambers 2 is made to be atmospheric pressure so that the liquid formulation is injected into between wafers.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题为了减少粘合剂对层压晶片的外表面的粘附，以便更高的注射效率和完美的注射，将液体制剂注入层压晶片的晶片之间的间隙中。解决方案：液体制剂L被保持在注射室2中的液体制剂容器3中，其通过表面张力而升高，并且在不从液体制剂容器3的边缘流出的同时突出。部分沿着层叠的晶片11和12的周缘在整个圆周上是连续的。注射室2被制成真空压力，使得层压晶片11和12的周边的整个圆周与液体制剂L接触在突出并且在整个圆周上连续的部分，闭合周边边缘开口。这里，堤61和62适合于液体制剂L不沿着层压晶片11和12的外表面扩展的外表面。然后，将注射室2的内部制成大气压，使得液体制剂被注入晶片之间。版权所有（C）2006，JPO＆NCIPI

108. 发明专利

JP2006059931A Rapid thermal process device 审中-公开
标题翻译：快速热处理装置
公开(公告)号：JP2006059931A
公开(公告)日：2006-03-02
申请号：JP2004238751
申请日：2004-08-18
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： SNIL WIKURAMANAYAKA
IPC分类号： H01L21/268 , H01L21/26 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a rapid thermal process (RTP) device that is used in the semiconductor industry for manufacturing a semiconductor device and can obtain more accurate temperature controlling performance and uniformity over a broad substrate by improving the conversion efficiency of the electric power used for heating a film deposited on the substrate to IR radiation. SOLUTION: The RTP device is provided with a chamber having a gas inlet port and gas exhaust port, a substrate holder provided in the chamber, and an infrared-ray emitting diode or infrared laser diode provided in the chamber. The substrate arranged on the substrate holder is heated to a high temperature by the infrared ray emitted from the infrared-ray emitting diode or infrared laser diode. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供半导体工业中用于制造半导体器件的快速热处理（RTP）器件，并且可以通过提高半导体器件的转换效率来获得更广泛的基板上的更精确的温度控制性能和均匀性用于将沉积在衬底上的膜加热到IR辐射的电力。解决方案：RTP设备设置有具有气体入口和排气口的腔室，设置在腔室中的衬底保持器，以及设置在腔室中的红外线发射二极管或红外激光二极管。通过从红外线发射二极管或红外激光二极管发射的红外线将布置在衬底保持器上的衬底加热到高温。版权所有（C）2006，JPO＆NCIPI

109. 发明专利

JP2006043965A Takeup type surface treatment apparatus and surface treatment method 审中-公开
标题翻译：采用类型表面处理装置和表面处理方法
公开(公告)号：JP2006043965A
公开(公告)日：2006-02-16
申请号：JP2004225907
申请日：2004-08-02
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： NAMIKI SHINICHI
IPC分类号： B29C63/02 , B29L7/00 , B29L9/00 , C23C14/56
摘要： PROBLEM TO BE SOLVED: To provide a takeup type surface treatment apparatus capable of preventing the contamination or the like of a base film caused by the contact of a guide roller with the surface or back of the base film during surface treatment and capable of eliminating the effect of the impurity gas such as steam or oxygen remaining in the base film on a laminated film, and a surface treatment method using it. SOLUTION: The takeup type surface treatment apparatus is equipped with the base film and a superposing means capable of superposing a protective film, which protects the treatment surface of the base film, on the base film. The superposing means is constituted so as to be capable of superposing the protective film on the treatment surface of the base film to take up and/or peel the same. Further, the treatment surface of the base film and the protective film can be superposed one upon another by the superposing means capable of superposing the base film and the protective film for protecting the treatment surface of the base film one upon another to be taken up and/or peeled. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够防止在表面处理期间由于导辊与基膜的表面或背面的接触而导致的基膜的污染等的卷取型表面处理装置，消除基膜中残留的蒸汽或氧气等杂质气体对叠层膜的影响，以及使用它的表面处理方法。卷取式表面处理装置配备有基膜和能够将保护膜叠加在底膜上的保护膜的重叠装置。叠置装置被构造成能够将保护膜叠加在基膜的处理表面上以吸收和/或剥离基底膜。此外，基膜和保护膜的处理面可以通过能够叠加基膜和保护膜的重叠装置相互重叠，以保护基膜的处理表面一个接一个地被吸收， /或去皮。版权所有（C）2006，JPO＆NCIPI

110. 发明专利

JP2006028577A Cvd system 审中-公开
标题翻译： CVD系统
公开(公告)号：JP2006028577A
公开(公告)日：2006-02-02
申请号：JP2004208460
申请日：2004-07-15
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： SNIL WIKURAMANAYAKA
IPC分类号： C23C16/44 , H01L21/205 , H01L21/677 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a CVD system capable of depositing films on the wafers with a higher throughput and without a contamination on the wafer surface.
SOLUTION: A CVD system is provided with wafer input/output chambers 1a and 1b, a process chamber 3 and a wafer transfer chamber 2. The process chamber is comprised of two or more wafer stages 6a-6d each of which is connected to a rotatable central pole via horizontal arms 8a-8d, a wafer load/unload compartment 5, and two or more separate process-reactors 4a and 4b wherein each process-reactor is supplied with only one type of process gas that needed for the chemical vapor deposition of a film. The wafer load/unload compartment and process-reactors are placed at the same radial distance from the central pole so that, when the central pole is rotated, each of the wafer stage passes through each of the process-reactors and the wafer load/unload compartment.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供能够以更高的生产量在晶片上沉积薄膜并且在晶片表面上没有污染的CVD系统。解决方案：CVD系统设置有晶片输入/输出室1a和1b，处理室3和晶片传送室2.处理室由两个或更多个晶片级6a-6d组成，每个晶片级连接通过水平臂8a-8d，晶片装载/卸载室5和两个或更多个分离的处理反应器4a和4b到可旋转的中心极，其中每个处理反应器仅供给化学品所需的一种类型的工艺气体膜的气相沉积。晶片装载/卸载室和处理反应器放置在与中心极相同的径向距离处，使得当中心极旋转时，每个晶片台通过每个处理反应器和晶片装载/卸载车厢。版权所有（C）2006，JPO＆NCIPI

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