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91. 发明专利

JPS5821363A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPS5821363A
公开(公告)日：1983-02-08
申请号：JP11761081
申请日：1981-07-29
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MATSUZAWA AKIRA , INOUE MICHIHIRO
IPC分类号： H01L21/70 , H01L21/331 , H01L21/761 , H01L21/822 , H01L27/04 , H01L29/73 , H01L29/8605
摘要： PURPOSE:To obtain the titled IC having high density by a method wherein an epitaxial layer is pinched by using an isolating diffusing layer from the upper section of a wafer and changed into a high resistor, and a collector and a load resistance can be unified to a transistor using the epitaxial layer as the collector. CONSTITUTION:B Is is diffused to a p type substrate, a reserve isolating layer 22 is formed and the epitaxial layer 23 is stacked. B Is diffused from the upper section of the n layer 23, and the isolating layers 24A are shaped, and connected to the layer 22. A p layer 24B is formed at the same time, and an n layer 25 is diffused while surrounding the layer 24B, used as both ends of the resistor and connected to wiring metals 29. That is, high resistance is shaped by employing the epitaxial layer as the resistor and positioning the p layer 24B in the epitaxial layer 23. The depth of the p layer 24B is made approximately half the epitaxial layer 23 and the high resistance value of approximately twice as high as when using epitaxial layer itself, the potential of the epitaxial layer is made considerably higher than the substrate, or remarkably high resistance value is acquired when the epitaxial layer is brought to low concentration and depletion layer diffuses to the epitaxial layer. According to this constitution, the resistor can be formed with high density without increasing processes.

92. 发明专利

JPS57170546A SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPS57170546A
公开(公告)日：1982-10-20
申请号：JP618882
申请日：1982-01-20
申请人： IBM
发明人： JIYOOJI RICHIYAADO GOSU , SHIYAN DAARU MARABIYA
IPC分类号： H01L21/70 , C08G12/34 , C08G12/40 , H01L21/302 , H01L21/3065 , H01L21/308 , H01L21/331 , H01L21/762 , H01L21/768 , H01L21/822 , H01L21/8222 , H01L21/8224 , H01L27/04 , H01L27/06 , H01L27/082 , H01L29/47 , H01L29/73 , H01L29/735 , H01L29/8605 , H01L29/872

93. 发明专利

JPS5771164A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS5771164A
公开(公告)日：1982-05-01
申请号：JP14783180
申请日：1980-10-22
申请人： Fujitsu Ltd
发明人： YAMAUCHI TSUNENORI
IPC分类号： H01L27/04 , H01L21/822 , H01L29/8605
CPC分类号： H01L29/8605
摘要： PURPOSE:To make a high-resistor element with a small occupied are by an N-P-N transistor process by a method wherein a one conductivity-type and high-concentration layer is diffused to reverse conductivity-type epitaxial layer provided on a substrate with the one conductivity-type from the position deviated in the transverse direction of the substrate side and the surface side. CONSTITUTION:After forming a P type impurity region 18 used as a diffusion source from a substrate side by ion implantation on a P type substrate 11 by an isolation region formation process, an N type epitaxial layer 12 is grown and the implantation region is simultaneously diffused upwards. Next, a P diffusion layer 13A is formed on the surface of the layer 12 at the position alternatively offset from the diffusion layer 18 by a process diffusing a P layer 13 demarcating the isolation region. Next, electrodes 16, 17 are provided by forming an N region 14 on the layer 12 by a collector contact formation process, for example and a nearly U- shaped N type resistor layer is formed between the electrodes 16, 17. In this way, effective length of resistor can be increased comparing with normal pinch resistor and resistor element having a high resistance value can be made with a small area.
摘要翻译：目的：通过NPN晶体管工艺制造具有较小占用面积的高电阻元件，其中将一个导电型和高浓度层扩散到具有一个电导率的基板上提供的反向导电型外延层的方法型从基板侧的横向偏离的位置和表面侧。构成：通过隔离区域形成工艺在P型衬底11上通过离子注入从衬底侧形成用作扩散源的P型杂质区18后，生长N型外延层12，同时扩散注入区向上。接下来，通过扩散划分隔离区域的P +层13的工艺，在与扩散层18交替偏移的位置的层12的表面上形成P +扩散层13A。接下来，例如通过集电极接触形成工艺在层12上形成N +区14来提供电极16,17，并且在电极16,17之间形成大致U形的N型电阻层。这样，与普通的夹持电阻器相比，电阻器的有效长度可以增加，并且可以以小的面积进行具有高电阻值的电阻器元件。

94. 发明专利

JPS5732663A Resistance element and its manufacture 失效
标题翻译：电阻元件及其制造
公开(公告)号：JPS5732663A
公开(公告)日：1982-02-22
申请号：JP10853880
申请日：1980-08-04
申请人： Mitsubishi Electric Corp
发明人： TORII YUTAKA
IPC分类号： H01L27/04 , H01L21/822 , H01L27/01 , H01L29/8605
CPC分类号： H01L29/8605
摘要： PURPOSE:To obtain a high resistor stably in excellent reproducibility even by a minute occupying area by putting an insulating film with an opening section between conductive layers and forming a resistance film, which can contact with the upper and lower conductive layers, in the opening section. CONSTITUTION:Nitrogen ions are injected to the surface of a semiconductor layer 2 and the sections where aluminum electrodes are formed are nitrified before shaping aluminum electrodes 4, 4'. When ions with 40KeV energy and of the amount of N doped in 1X10 pcs./cm are injected, the surfaces of the semiconductor layer 2 are nitrified, the silicon nitride films 7 with approximately 100-200Angstrom thickness are formed to the surfaces, and the silicon nitride films 7 function as the high resistors.
摘要翻译：目的：即使通过在导电层之间放置具有开口部分的绝缘膜并且在开口部分中形成可与上部和下部导电层接触的电阻膜，即使通过微小的占据面积也能以优异的再现性稳定地获得高电阻。构成：在形成铝电极4,4'之前，将氮离子注入到半导体层2的表面，并且形成有铝电极的部分被硝化。当注入具有40KeV能量和在1×10 17 / cm 2中掺杂的N +的量的离子时，半导体层2的表面被硝化，氮化硅膜7具有大约100-200A 厚度形成在表面上，氮化硅膜7用作高电阻。

95. 发明专利

JPS56158465A FORMATION OF RESISTANCE FOR INTEGRATED CIRCUIT 失效
公开(公告)号：JPS56158465A
公开(公告)日：1981-12-07
申请号：JP6191580
申请日：1980-05-09
申请人： HITACHI LTD
发明人： KUDOU HIROYUKI , MAKINO JIYUNICHI , MIYAGAWA NOBUAKI
IPC分类号： H01L27/04 , H01L21/822 , H01L29/8605
摘要： PURPOSE:To accurately control the resistance value or the ratio of the resistance value and enable to change the characteristics of the circuit having the same function for subject resisting material by a method wherein the shape of a diffusion mask is partially changed in proportion to the resistance value within the prescribed diffused resistance formed region. CONSTITUTION:For instance, in order to obtain the circuit having a different gain in the amplifying circuit consisting of an arithmetic operational amplifier A, resistors Ri, Rf and Rg, the resisting material for which the resistance value of Rf is formed by having the same Ri, for example. The resisting material to be used for the circuit is formed by providing the diffusing region of a reverse conductive type in an isolated island, but the diffusing region is limited within the fixed range when the resistance value is to be changed and the patterning of the diffusion mask is performed by making a partial change on it. To be more precise, the length l1 section in a resistance layer, consisting of width w0 and length l0, for example, is changed to a narrower width w1, a diffusion layer is provided within the region of the length l0 in a Z-shape and the width w1 is changed (l1 is also changed). Through these procedures, the resistance material having a different resistance value and a resitance ratio can be controllably formed and also this can be applied to the circuit having different characteristics.

96. 发明专利

JPS56134755A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS56134755A
公开(公告)日：1981-10-21
申请号：JP3785180
申请日：1980-03-25
申请人： CITIZEN WATCH CO LTD
发明人： SEKINE MITSUO
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8238 , H01L27/092 , H01L29/78 , H01L29/8605
摘要： PURPOSE:To obtain an ideal P-well resistor showing a stabilized value by a method wherein an N type impurity is injected in a P-well resistive region in higher density than an N type region before the P-well resistor is formed. CONSTITUTION:An N layer 17 (in a density difference by more than one figure at the minimum) is formed on an N -substrate by ion-injection before the formation of the P-well resistor. Therefore, even a field threshold Vth at this part rises and a potential of an Al wiring 12 changes, a channel is not formed in P-channel type FEt just below the N layer. Accordingy, the stabilized and ideal P-well resistor can be attained.

97. 发明专利

JPS56110251A HIGH WITHSAND VOLTAGE SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS56110251A
公开(公告)日：1981-09-01
申请号：JP1150680
申请日：1980-02-04
申请人： HITACHI LTD
发明人： IMAIZUMI ICHIROU , KIMURA MASATOSHI , OCHI SHIKAYUKI , YOSHIMURA MASAYOSHI , YAMAGUCHI TAKASHI , KOUDA TOYOMASA
IPC分类号： H01L21/331 , H01L21/768 , H01L21/822 , H01L23/522 , H01L27/04 , H01L29/06 , H01L29/08 , H01L29/40 , H01L29/73 , H01L29/8605
摘要： PURPOSE:To provide a high withstand voltage semiconductor device and prevent generation of a parasitic MOS transistor by arranging wiring on a low impurity region around an impurity region. CONSTITUTION:A P type diffusion layer 2 is formed on an N type semiconductor base 1, and a P type region 3 where impurity concentration is low is formed around the diffusion layer 2. Wiring 5 is provided on this substrate 1 through an insulation film 4. The wiring 5 exists on the low impurity concentration region 3 only, and ends up there. This impurity region 2, 3 and the wiring 5 represent, as an example, the elongated part of an electrode for leading a resistor element and the high potential sides of a resistor element and also, as an example, the elongated part of an electrode for leading the collector region of PNP transistor and an emitter electrode. Under this constitution, it is possible to prevent deterioration of withstand voltage in the impurity region 2 and eliminate the risk that the P type region 2 and the adjoining P type region are short-circuited by parasitic MOS effect.

98. 发明专利

JPS5691460A MANUFACTURING OF DISPERSION LAYER RESISTOR 失效
公开(公告)号：JPS5691460A
公开(公告)日：1981-07-24
申请号：JP16870279
申请日：1979-12-25
申请人： SUWA SEIKOSHA KK
发明人： KANO TOSHIO
IPC分类号： H01C17/06 , H01L21/28 , H01L21/822 , H01L27/04 , H01L29/8605
摘要： PURPOSE:To reduce fluctuation of resistance value, by applying beam onto a resistor at the time when processing of the resistance body into its final shape and processing of take-out electrode wiring were all completed. CONSTITUTION:A dispersion layer 3 is formed on main surface of a silicon substrate 1 after or at the time of completion of building of a transistor and other elements in the substrate. And, after a silicon oxide membrane 2 was formed and a contact window was opened, a take-out electrode 4 is formed. And then, laser beam is applied by a ruby laser pulse oscillation for annealing of the product. Thus annealed dispersion layer resistance body takes resistance values of less fluctuation. Other than the aforementioned ruby laser, Ar laser and YAC laser may be used, and even in the case of continuous oscillation or pulse oscillation, the same effect can be obtained.

99. 发明专利

JPS55138267A MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT CONTAINING RESISTANCE ELEMENT 失效
公开(公告)号：JPS55138267A
公开(公告)日：1980-10-28
申请号：JP4492779
申请日：1979-04-12
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： FUJITA TSUTOMU
IPC分类号： H01L27/04 , H01L21/265 , H01L21/761 , H01L21/822 , H01L21/8222 , H01L27/06 , H01L29/8605
摘要： PURPOSE:To obtain a resistance element with a value controlled easily by a method wherein by reverse conducting ion to a semiconductor substrate is implanted thereto by which, a buried resistance layer and its wiring layer is formed. CONSTITUTION:When B ion is implanted in an opening of an oxide film 9 on an n- type Si substrate 11 and a buried p-type high resistance layer 12 is formed by a specified dose selected, the surface is not changed to a p-type region. A resist mask 13 is applied and a wiring layer 14 which has a p-type low resistance structure is formed by B ion having low energy and implanted in a high dose. After the resist mask 13 is removed and sintering at low temperature is performed, an oxide film is applied on them by a wet oxidizing process at low temperature, and electrodes 16 are formed through an opening selectively formed on it. By this constitution resistance of the buried layer can be suitably controlled because of ion implantation method, and diffusion process at high temperature is eliminated, and resistance is held to be constant, and process of manufacturing is simple and profitable when integration with other elements is taken.

100. 发明专利

JPS55110065A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS55110065A
公开(公告)日：1980-08-25
申请号：JP1649879
申请日：1979-02-15
申请人： NIPPON ELECTRIC CO
发明人： MATSUDA KOUHEI
IPC分类号： H01L27/04 , H01L21/822 , H01L29/8605
摘要： PURPOSE:To obtain a resistance layer by providing a mask having two openings at a fixed distance on the main surface of a semiconductor and connecting diffusion layers on both sides. CONSTITUTION:From diffusion windows 20, 21 provided at a distance on n -type Si substrate 19, p-layers 17, 18 are formed and connected in their low concentration parts. When the depth from the surface of the p-layer is xj, the distance xi of diffusion from end 31 of the diffusion window is xi 0.9xj. Consequently, if the distance l between windows 20 and 21 is set at l

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