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    • 94. 发明专利
    • Noise reduction circuit for semiconductor device
    • 用于半导体器件的噪声减少电路
    • JP2003008424A
    • 2003-01-10
    • JP2001191789
    • 2001-06-25
    • Matsushita Electric Ind Co Ltd松下電器産業株式会社
    • FUJITA NOBUKO
    • G02F1/133G09G3/20G09G3/291G09G3/296G09G3/36H03K19/0175G09G3/28
    • G09G3/20G09G3/293G09G3/296G09G3/3685G09G2330/025G09G2330/06
    • PROBLEM TO BE SOLVED: To provide a noise reduction circuit for a semiconductor device that can reduce a high level noise caused by concentrated flowing of a momentary transient current (peak current) through power lines of IO buffers when many outputs are inverted in each semiconductor, using the IO buffer with an output in a plurality of bits and capable of a high output current capability, such as a data control circuit for plasma display and liquid crystal display.
      SOLUTION: The noise reduction circuit is configured such that a delay circuit is inserted to each bit of each semiconductor to individually shift an inversion timing of output data so as to deviate a peak timing of the transient current momentarily flowing through the output IO buffer thereby reducing a noise due to a sudden change in a power supply voltage and a GND voltage in the inside of each semiconductor.
      COPYRIGHT: (C)2003,JPO
    • 要解决的问题:为了提供一种用于半导体器件的噪声降低电路,其可以在每个半导体中的许多输出反相时,通过IO缓冲器的电源线,通过瞬时瞬态电流(峰值电流)的集中流动来降低高电平噪声, 使用具有多个位的输出并且能够具有高输出电流能力的IO缓冲器,诸如用于等离子体显示和液晶显示的数据控制电路。 解决方案:噪声降低电路被配置为使得延迟电路插入到每个半导体的每个位以单独地移位输出数据的反转定时,以便偏离暂时流过输出IO缓冲器的瞬态电流的峰值定时,从而减少 由于每个半导体内部的电源电压和GND电压的突然变化引起的噪声。