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91. 发明专利

JPS6197188A Manufacture of silicon semiconductor rod 失效
标题翻译：硅半导体器件的制造
公开(公告)号：JPS6197188A
公开(公告)日：1986-05-15
申请号：JP22592985
申请日：1985-10-09
申请人： Siemens Ag
发明人： UORUFUGANGU KERAA , GERUHARUTO BAROUSUKII
IPC分类号： C30B15/22 , C30B15/00 , C30B29/06 , H01L21/18 , H01L21/208
CPC分类号： C30B29/06 , C30B15/00

92. 发明专利

JPS6117799B2 JPS6117799B2 - 失效
公开(公告)号：JPS6117799B2
公开(公告)日：1986-05-09
申请号：JP22486282
申请日：1982-12-23
申请人： Tohoku Metal Ind Ltd
发明人： YAMAZAKI TOORU , KIMURA MITSUHIRO
IPC分类号： C30B15/00 , C30B29/32 , G02F1/11
CPC分类号： C30B15/00 , C30B29/32
摘要： PURPOSE:To obtain an optically uniform optical element of lead molybdate single crystal having improved light transmission efficiency of laser on the short wavelength side, by cutting out the single crystal grown from a single crystal lump of lead molybdate as a starting material. CONSTITUTION:A single crystal of lead molybdate which does not generate striae and foggy bubbles is grown from a single crystal lump of lead molybdate as a starting material in a platinum crucible or the like by selecting adequately the conditions such as the pulling-up velocity, the number of revolutions of the crystal. The single crystal is cut to an adequate size and the laser transmitting surface is specularly polished to obtain an optical element. Due to the absence of foggy bubbles in the single crystal, the optical element has the superior efficiency of light transmission at the short wavelength side.

93. 发明专利

JPS59195596A Filter for lifting machine of silicon single crystal 失效
标题翻译：硅单晶提升机过滤器
公开(公告)号：JPS59195596A
公开(公告)日：1984-11-06
申请号：JP6804983
申请日：1983-04-18
申请人： Toshiba Mach Co Ltd
发明人： TAKAHASHI TAKAO , HAYASHI SHINGO , SUGIYAMA HISATAKA , TADA YOSHIAKI , OOISHI TOSHIO
IPC分类号： C30B15/00 , C30B29/06
CPC分类号： C30B15/00
摘要： PURPOSE:To collect silicon oxide without clogging by sucking a gas, generated in a lifting machine, through a hermetic vessel wherein a partition plate having a clearance over the oil which is stored in the lower part is provided, in the reduced-pressure type Si single crystal lifting machine. CONSTITUTION:An introducing pipe 12 which is connected with an Si single crystal lifting machine, and a discharge pipe 13 which is connected with a vacuum pump, are provided at both ends of the upper surface of a hermetic vessel 11 which is round- or square-shaped. An oil 14, having a low vapor pressure, is filled in the lower half part of the vessel 11, and >=1 partition plate 16 are provided in the upper space, leaving a clearance 15 between the lower end and the surface of the oil 14. A lid 17 is provided at the side of the vessel 11 for replacing the oil 14. The Si oxide, generated in the Si single crystal lifting machine, is sucked by a vacuum pump, and introduced into the vessel 11 along with the gas. At this time, the Si oxide, due to its high temp., is adsorbed into the low temp. oil 14 by the contact therewith. The stream of the Si oxide, which is left unadsorbed, is agitated by the plate 16, brought into contact with the oil 14, and adsorbed.
摘要翻译：目的：通过在提升机中产生的气体，通过在密闭容器中吸收气体来收集氧化硅而不堵塞，其中设置有存储在下部的油上的间隙的隔板，在减压型Si 单晶起重机。构成：与Si单晶提升机连接的导入管12和与真空泵连接的排出管13设置在圆形或正方形的密封容器11的上表面的两端 -成形。具有低蒸汽压力的油14被填充在容器11的下半部分中，并且> = 1分隔板16设置在上部空间中，在油的下端和表面之间留下间隙15 在容器11的侧面设置有用于更换油14的盖17.在Si单晶提升机中产生的Si氧化物被真空泵吸入，并与气体一起引入容器11 。此时，Si氧化物由于其高温吸附在低温下。油14与其接触。未吸附的Si氧化物流被板16搅拌，与油14接触并被吸附。

94. 发明专利

JPS5940175B2 JPS5940175B2 - 失效
公开(公告)号：JPS5940175B2
公开(公告)日：1984-09-28
申请号：JP296879
申请日：1979-01-17
申请人： Hitachi Chemical Co Ltd
发明人： TAKAGI KAZUMASA , FUKAZAWA TOKUMI , OOI TETSU
IPC分类号： C09K11/00 , C09K11/08 , C09K11/74 , C09K11/77 , G01T1/202
CPC分类号： G01T1/2023 , C09K11/745 , C09K11/7707 , C30B15/00 , C30B29/28

95. 发明专利

JPS59164699A Preparation of ga-as single crystal 失效
标题翻译： GA-AS单晶的制备
公开(公告)号：JPS59164699A
公开(公告)日：1984-09-17
申请号：JP3832183
申请日：1983-03-10
申请人： Agency Of Ind Science & Technol
发明人： KATSUMATA TOORU , TERAJIMA KAZUTAKA , FUKUDA TSUGUO
IPC分类号： C30B27/02 , C30B15/00 , C30B29/42
CPC分类号： C30B15/00 , C30B29/42
摘要： PURPOSE:To prepare a Ga-As single crystal of high quality having uniform characteristics of resistance distribution contg. no growth striation and uniform distribution of dislocation, etc. by adjusting a proportion of Ga to As in the melt of a raw material to a proportion of the compsn. of the congruent, and pulling out thereafter a single crystal through a liquid sealing material. CONSTITUTION:An evaporation loss of As is calculated from precise measurements of the amt. of starting materials, i.e. Ga and As to be mixed, the weight of pulled up single crystal, and the weight of the remaining melt of the starting materials. The starting materials are adjusted wherein a Ga-As melt admixed with excessive As exceeding the evaporated loss is decompressed from the pressure applied thereon to 1 atm by maintaining its temp. at the melting point. The excessive As is vaporized, and when the vaporization ceases, namely, when generation of foams from the melt is ended, a congruent compsn. is formed from the melt. The seed crystal is allowed to contact with the melt in this state, and a Ga-As single crystal is grown by the pulling up operation of the crystal. In this case, a high pressure sealing pulling up method is adopted using B2O3 as the sealing liquid.
摘要翻译：目的：制备具有均匀电阻分布特性的高品质Ga-As单晶。通过将原料熔体中的Ga与As的比例调整到比例的比例，无增长条纹和位错均匀分布等。的一次性，然后通过液体密封材料拉出单晶。构成：由Amt的精确测量计算As的蒸发损失。的起始材料，即混合的Ga和As，拉起的单晶的重量，以及原料的剩余熔体的重量。调整起始材料，其中与过量的超过蒸发损耗的Ga-As熔体通过保持其温度从施加在其上的压力减压至1atm。在熔点。过量的As被蒸发，当蒸发停止时，即当熔体发生泡沫结束时，一致的组成。由熔体形成。在该状态下使晶种与熔体接触，并且通过晶体的上拉操作生长Ga-As单晶。在这种情况下，采用B2O3作为密封液的高压密封拉拔方法。

96. 发明专利

JPS59116200A Optical element of lead molybdate single crystal 失效
标题翻译： LEED MOLYBDATE单晶的光学元件
公开(公告)号：JPS59116200A
公开(公告)日：1984-07-04
申请号：JP22486282
申请日：1982-12-23
申请人： Tohoku Metal Ind Ltd
发明人： YAMAZAKI TOORU , KIMURA MITSUHIRO
IPC分类号： C30B15/00 , C30B29/32 , G02F1/11
CPC分类号： C30B15/00 , C30B29/32
摘要： PURPOSE:To obtain an optically uniform optical element of lead molybdate single crystal having improved light transmission efficiency of laser on the short wavelength side, by cutting out the single crystal grown from a single crystal lump of lead molybdate as a starting material. CONSTITUTION:A single crystal of lead molybdate which does not generate striae and foggy bubbles is grown from a single crystal lump of lead molybdate as a starting material in a platinum crucible or the like by selecting adequately the conditions such as the pulling-up velocity, the number of revolutions of the crystal. The single crystal is cut to an adequate size and the laser transmitting surface is specularly polished to obtain an optical element. Due to the absence of foggy bubbles in the single crystal, the optical element has the superior efficiency of light transmission at the short wavelength side.
摘要翻译：目的：通过切割从单晶钼酸铅生长的单晶作为起始材料，获得具有提高激光在短波长侧的光传输效率的钼酸铅单晶的光学均匀光学元件。构成：通过充分选择诸如拉升速度等条件，将不产生条纹和雾气的单独的钼酸铅晶体从作为原料的钼酸铅单晶生长在铂坩埚等中，晶体的转数。将单晶切割成适当的尺寸，并将激光透射表面镜面抛光以获得光学元件。由于在单晶中没有雾气，所以光学元件在短波长侧具有优异的透光效率。

97. 发明专利

JPS5945993A Manufacture of optical fiber made of silver halide 失效
标题翻译：白炽灯光纤制造
公开(公告)号：JPS5945993A
公开(公告)日：1984-03-15
申请号：JP15129282
申请日：1982-08-31
申请人： Fujikura Ltd
发明人： SHIODA TAKAO , CHIGIRA SADAO
IPC分类号： C30B15/00 , C30B29/12 , G02B6/00
CPC分类号： C30B15/00 , C30B29/62
摘要： PURPOSE:To manufacture an optical fiber made of a silver halide single crystal having high transmission characteristics, by pulling the single crystal from molten silver halide keeping the atmosphere at the pulling zone to a halogen-containing atmosphere and shielding from the radiation of ultraviolet ray and visible light. CONSTITUTION:Silver halide 2 is put into the crucible 1, and molten by the high- frequency heating coil 3. The halogen gas of the same kind as the halogen of the silver halide 2 or a mixture of the gas with an inert gas, is introduced into the shield pipe 4 through the halogen gas introducing pipe 6. The cylindrical seed crystal made of the single crystal of silver halide of the same kind as the silver halide in the crucible 2 is dipped in the molten silver halide 2 from the shaper 8 and pulled up slowly to form a continuous optical fiber 9 made of the single crystal of silver halide through the shaper 8. The formed optical fiber 9 is taken out through the shield pipe 4 and the light-shielding box 7 by the take- off device.
摘要翻译：目的：制造由具有高透射特性的卤化银单晶制成的光纤，通过从熔融卤化银拉出单晶，将拉动区的气氛保持为含卤素气氛，并遮蔽紫外线辐射，可见光。构成：将卤化银2放入坩埚1中，并由高频加热线圈3熔化。与卤化银2的卤素相同的卤素气体或气体与惰性气体的混合物为通过卤素气体导入管6将其引入到屏蔽管4中。由坩埚2中与卤化银相同种类的卤化银单晶制成的圆柱形晶体从成形器8浸入熔融卤化银2中并缓慢拉起，通过整形器8形成由卤化银单晶形成的连续光纤9.所形成的光纤9通过屏蔽管4和遮光盒7被取出装置取出。

98. 发明专利

KR102223709B1 KR102223709B1 - A semiconductor wafer made of single crystal silicon, and a method of manufacturing a semiconductor wafer made of single crystal silicon 有权
公开(公告)号：KR102223709B1
公开(公告)日：2021-03-05
申请号：KR1020197017133A
申请日：2017-12-08
申请人： 실트로닉 아게
发明人： 티모 뮐러 , 미카엘 겜리히 , 안드레아스 자틀러
IPC分类号： H01L21/02 , C30B15/04 , C30B15/20 , C30B29/06 , C30B33/00 , C30B33/02 , H01L21/324
CPC分类号： C30B29/06 , H01L21/02002 , C30B15/00 , C30B15/04 , C30B15/203 , C30B33/005 , C30B33/02 , H01L21/00 , H01L21/02598 , H01L21/3225 , H01L21/324
摘要： 본 발명은 전면, 후면, 중심 및 엣지를 갖는, 단결정 실리콘으로 이루어진 반도체 웨이퍼 및 이의 제조에 관한 것으로서, 여기서 상기 반도체 웨이퍼는 하기를 포함한다:
중심으로부터 엣지로 연장되는 Nv 영역;
반도체 웨이퍼의 전면으로부터 20 ㎛ 이상의 깊이까지 내부로 연장되는 무결함 구역으로서, 여기서 백금 확산 및 DLTS에 의해 결정된, 무결함 구역 내 베이컨시의 밀도는 1×10
13 베이컨시/cm
3 이하인 무결함 구역;
4.5×10
17 원자/cm
3 이상 및 5.5×10
17 원자/cm
3 이하의 산소의 농도;
무결함 구역에 인접하며 열처리에 의해 피크 밀도가 5.5×10
9 /cm
3 이상인 BMD로 발달될 수 있는 핵을 갖는, 반도체 웨이퍼의 내부의 영역으로서, 여기서 열처리는, 4 시간의 기간에 걸쳐 800℃의 온도로, 그리고 16 시간의 기간에 걸쳐 1000℃의 온도로, 반도체 웨이퍼를 가열하는 것을 포함하는 반도체 웨이퍼의 내부의 영역.

99. 发明专利

JP2018197340A 向上した耐放射線性を有する多重ドープルテチウム系オキシオルトシリケートシンチレータ审中-公开
公开(公告)号：JP2018197340A
公开(公告)日：2018-12-13
申请号：JP2018120603
申请日：2018-06-26
申请人：ゼコテックフォトニクスインコーポレイテッド , ZECOTEK PHOTONICS INC.
发明人：アレクサンドルイオシフォヴィッチザグメニイ , ユーリドミトリエヴィッチザヴァルツェフ , セルゲイアレクサンドロヴィッチクトヴォイ , ヴァレンティンアレクシーヴィッチコズロフ , ファオウジアブデルモナイムゼロウク , ミハイルヴァシレヴィッチザヴェルトヤエフ
IPC分类号： C30B29/34 , C09K11/00 , G01T1/20 , C09K11/79
CPC分类号： C09K11/7795 , C09K11/7774 , C09K11/7783 , C09K11/7792 , C30B15/00 , C30B17/00 , C30B29/34 , C30B33/02
摘要：【課題】改善された耐放射線性などの改善されたフォトニック特性を有する共ドープおよび多重共ドープルテチウム系オキシオルトシリケートシンチレータ(結晶およびセラミックス)を提供する。【解決手段】本発明は、希土類シリケートを主成分とし、ルテチウムを含み、化学式:(Lu 2−w−x+2y A w Ce x Si 1−y ) 1−z Me z J j O q および(Lu 2−w−x−2y A w Ce x Si 1+y ) 1−z Me z J j O q で表される組成を有する固溶体の一連の多重ドープセリウム活性化シンチレーション材料に関する。本発明は、高エネルギー物理学における素粒子および原子核の検出、原子力産業;医療、陽電子放射断層撮影法(TOF PETおよびDOI PETスキャナー)および単光子放射型コンピューター断層撮影法(SPECT)、磁気共鳴画像法を有する陽電子放射断層撮影法(PET/MR);X線コンピューターフルオログラフィー;空港セキュリティシステム、トラックおよび貨物用コンテナの検査用のガンマ線システムなどの固体構造の非破壊試験に有用である。【選択図】なし

100. 发明专利

JPWO2018008561A1 単結晶シリコン板状体およびその製造方法审中-公开
公开(公告)号：JPWO2018008561A1
公开(公告)日：2018-11-29
申请号：JP2017024235
申请日：2017-06-30
申请人：株式会社トクヤマ
发明人：正田勲 , 橘昇二
IPC分类号： C30B15/20 , C30B33/02 , C30B29/06
CPC分类号： C30B15/00 , C30B29/06
摘要：高い酸素濃度の単結晶シリコン板状体において、デバイス製造工程で行われる800〜1100℃の加熱処理が施されても、ライフタイムの低下が抑えられ、太陽電池やパワーデバイスとして高性能のものになる単結晶シリコンを開発することを目的とする。径方向中心部において、結晶中の格子間酸素濃度が25〜45ppmaであり、且つ置換型炭素濃度が0.5ppma以下である、CZ法単結晶シリコンインゴットの直胴部上部から切り出されたような、単結晶シリコン板状体であって、前記径方向中心部が、透過電子顕微鏡による20万倍の画像において、バルク内に酸素析出物が観察されず、且つ、該単結晶シリコン板状体を、950℃で60分加熱した後では、前記20万倍の画像において、バルク内に酸素析出物が観察され、この酸素析出物の形状が、200万倍の画像で多面体構造に観察される、単結晶シリコン板状体が提供される。

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