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    • 92. 发明专利
    • Processing support apparatus and method, semiconductor manufacturing support apparatus and method, and program
    • 处理支持装置和方法,半导体制造支持装置和方法及程序
    • JP2012212730A
    • 2012-11-01
    • JP2011076626
    • 2011-03-30
    • Lapis Semiconductor Co Ltdラピスセミコンダクタ株式会社
    • MITSUNARI HARUKI
    • H01L21/02G05B19/418G06Q50/04
    • G06F17/10B24B51/00G03F7/70483G06F17/50H01L21/67276Y02P90/86
    • PROBLEM TO BE SOLVED: To easily and highly accurately support implementation of predetermined processing on schedule on an object to be processed with a predetermined facility.SOLUTION: Among segments of a straight line that passes through a reference coordinate point satisfying a first predetermined condition, and that is in parallel to an X axis representing the number X of wafers, and segments of straight lines that pass through coordinate points in a region surrounded by a Y axis representing processing time Y and straight lines passing through the reference coordinate point and an origin, and that pass through the reference coordinate point, a segment satisfying a second predetermined condition is derived by using a facility-unit processing result database (step 156). Among inclinations of straight lines that pass through all coordinate points representing the number X of wafers which is not less than a predetermined number, among coordinate points indicated by a facility-recipe-unit processing result database, and pass through the derived segment, the inclination of a straight line satisfying a third predetermined condition is derived (step 158). By using a regression expression for which the derived segment and the derived inclination are substituted, processing time is calculated (step 160).
    • 要解决的问题:为了容易且高度准确地支持在预定设施处理对象上按计划执行预定处理。

      解决方案:在通过满足第一预定条件的基准坐标点并且与表示晶片数X的X轴平行的直线段中,以及通过坐标点的直线段 在表示处理时间Y的Y轴和通过基准坐标点和原点的直线包围的区域中,通过基准坐标点,通过使用设备单位处理导出满足第二规定条件的段 结果数据库(步骤156)。 在通过由设施配方单位处理结果数据库指示的坐标点之间通过表示不少于规定数量的晶片的数量X的所有坐标点的直线倾斜,并且通过导出的段,倾斜 导出满足第三预定条件的直线(步骤158)。 通过使用代入导出段和导出倾斜度的回归表达式,计算处理时间(步骤160)。 版权所有(C)2013,JPO&INPIT

    • 94. 发明专利
    • Eyeglass lens processing apparatus
    • 眼镜镜片加工设备
    • JP2012076173A
    • 2012-04-19
    • JP2010222883
    • 2010-09-30
    • Nidek Co Ltd株式会社ニデック
    • SHIBATA RYOJI
    • B24B9/14B24B49/02
    • B24B9/148B24B9/14B24B9/144B24B47/22B24B49/02B24B51/00
    • PROBLEM TO BE SOLVED: To enable processing of effectively restraining "axial deviation" of a thermoplastic lens.SOLUTION: This eyeglass lens processing apparatus includes: a lens rotating unit for rotating a chuck shaft for holding an eyeglass lens; a processing tool rotating unit for rotating a processing tool rotating shaft attached with a rough processing tool for roughly processing the lens; an axis-to-axis distance changing unit for varying a distance between the chuck shaft and the processing tool rotating shaft; and a selecting unit for selecting a construction material of the lens. The eyeglass lens processing apparatus roughly processes the lens based on a rough processing locus. The eyeglass lens processing apparatus includes a control unit which processes the lens by the rough processing tool based on the rough processing locus by controlling the lens rotating unit and the axis-to-axis distance changing unit, and which performs processing of two stages of processing a remaining processing area based on the rough processing locus while rotating the lens, after performing the processing of the first stage of cutting in, with the rough processing tool, to the rough processing locus without rotating the lens in a plurality of lens rotation angle directions, when selecting the lens of a thermoplastic raw material.
    • 要解决的问题:能够有效地抑制热塑性透镜的“轴向偏离”的处理。 解决方案:该眼镜透镜处理装置包括:透镜旋转单元,用于旋转用于保持眼镜镜片的卡盘轴; 处理工具旋转单元,用于旋转附加有粗加工工具的加工工具旋转轴,用于粗加工透镜; 轴对轴距离改变单元,用于改变卡盘轴和加工工具旋转轴之间的距离; 以及用于选择透镜的构造材料的选择单元。 眼镜透镜处理装置基于粗加工轨迹大致处理透镜。 眼镜透镜处理装置包括:控制单元,其通过控制透镜旋转单元和轴对轴距离变化单元,通过粗加工工具基于粗加工轨迹来处理透镜,并且执行两个阶段的处理 在通过粗加工工具进行第一阶段的切削处理之后,在使透镜在多个透镜旋转角度方向上旋转的同时对粗加工轨迹进行处理之后,在旋转透镜的同时基于粗加工轨迹的剩余处理区域 当选择热塑性原料的透镜时。 版权所有(C)2012,JPO&INPIT
    • 98. 发明专利
    • Spectacle lens machining apparatus
    • 镜面镜头加工设备
    • JP2010125573A
    • 2010-06-10
    • JP2008305459
    • 2008-11-28
    • Nidek Co Ltd株式会社ニデック
    • TAKEICHI KYOJI
    • B24B9/14B24B47/22G02C7/02G02C13/00
    • B24B9/14B24B51/00
    • PROBLEM TO BE SOLVED: To easily machine a lens with favorable external appearance by avoiding the interference of a nose pad arm with the lens. SOLUTION: A spectacle lens machining apparatus includes a means for detecting edge positions of the front surface of the lens and the back surface of the lens in accordance with lens shape data, an edge corner machining tool for machining the edge corner of the back surface of the lens, a correction amount data input means for inputting correction amount data of the edge corner necessary for avoiding the interference of the edge of the back surface of the lens after finish work and the nose pad arm of a spectacle frame, wherein the correction data include a machining amount at the edge position of the nose pad arm and a machining range of the edge corner, a machining data calculating means for obtaining a machining locus of the edge corner of the back surface of the lens in accordance with edge position detected data and the correction amount data to obtain correction machining data, and a machining control means for machining the edge corner of the back surface of the lens by the edge corner machining tool in accordance with the correction machining data. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:通过避免鼻梁臂与镜片的干涉,轻松加工具有良好外观的镜片。 解决方案:眼镜镜片加工设备包括用于根据透镜形状数据检测透镜的前表面和透镜的后表面的边缘位置的装置,用于加工透镜形状数据的边角的边角加工工具 校正量数据输入装置,用于输入边缘角的修正量数据,该修正量数据避免了镜面完成后的镜片的后表面的边缘与眼镜框的鼻垫臂的干涉,其中 校正数据包括在鼻梁臂的边缘位置处的加工量和边缘角的加工范围,加工数据计算装置,用于根据边缘获得透镜的后表面的边缘角的加工轨迹 位置检测数据和校正量数据以获得校正加工数据;以及加工控制装置,用于通过e加工透镜背面的边缘角 dge角加工刀具按照校正加工数据。 版权所有(C)2010,JPO&INPIT
    • 99. 发明专利
    • Polish requirement management device for cmp device and method of managing polish requirement
    • 用于CMP设备的抛光要求管理设备和管理抛光要求的方法
    • JP2008258510A
    • 2008-10-23
    • JP2007101200
    • 2007-04-07
    • Tokyo Seimitsu Co Ltd株式会社東京精密
    • YOKOYAMA TOSHIYUKIFUJITA TAKASHITANAKA KATSUNORI
    • H01L21/304B24B37/00
    • B24B49/03B24B51/00
    • PROBLEM TO BE SOLVED: To reduce running cost and also improve yield by eliminating variations of wafer film thickness and increasing polish efficiency. SOLUTION: A CMP device 1 includes a film thickness measuring means 6 to measure the wafer film thickness before it is polished, a polish recipes preparing means 7 to prepare polish requirements so that the polish requirements such as the wafer polish speed and pressure and the like are optimal, a polishing time prediction means 8 to predict the wafer polishing time based on the optimal polish requirement and the measured thickness value, a polishing time measuring means 8 to measure the real wafer polishing time, and a computer 9 to manage the polish requirements based on the measured values of the polishing time and the like. Further, the computer 9 includes a calculating portion 23 to calculate the difference between the measured and predicted values of the polishing time, and a polish requirements correcting and modifying portion 24 to correct and modify the polish requirements so that the calculated difference becomes minimum. This enables correction and modification of the polish requirements to the extent a real time basis is made possible. COPYRIGHT: (C)2009,JPO&INPIT
    • 要解决的问题:通过消除晶片膜厚度的变化和提高抛光效率,降低运行成本并提高产量。 解决方案:CMP装置1包括在抛光之前测量晶片膜厚度的膜厚测量装置6,用于制备抛光要求的抛光配方制备装置7,以便抛光要求如晶片抛光速度和压力 抛光时间预测装置8,用于基于最佳抛光要求和测量的厚度值来预测晶片抛光时间;抛光时间测量装置8,用于测量实际的晶片抛光时间;以及计算机9,用于管理 基于抛光时间的测量值等的抛光要求。 此外,计算机9包括用于计算抛光时间的测量值和预测值之间的差的计算部分23以及抛光要求校正和修改部分24,以校正和修改抛光要求,使得计算的差值变得最小。 这使得可以在实时基础上修正和修改抛光要求。 版权所有(C)2009,JPO&INPIT