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91. 发明专利

JP2009093787A Magnetic storage element, magnetic memory including the same, and driving method of magnetic memory 有权
标题翻译：磁性存储元件，包括其的磁性存储器和磁性存储器的驱动方法
公开(公告)号：JP2009093787A
公开(公告)日：2009-04-30
申请号：JP2008287601
申请日：2008-11-10
申请人： Toshiba Corp , 株式会社東芝
发明人： KITAGAWA EIJI , YOSHIKAWA MASATOSHI , KISHI TATSUYA , YODA HIROAKI
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/1693
摘要： PROBLEM TO BE SOLVED: To prevent an erroneous writing operation during a read operation. SOLUTION: A method is provided for driving a magnetic memory including a memory cell having a magnetic memory element wherein the magnetic memory element includes: a magnetic pinned layer which has magnetization in a direction substantially perpendicular to a film surface and has a pinned magnetization orientation; a magnetic storage layer which has magnetization in a direction substantially perpendicular to the film surface and has a variable magnetization orientation; and a tunnel barrier layer provided between the magnetic pinned layer and the magnetic storage layer. The magnetization orientation of the magnetic storage layer can be reversed by passing a current pulse through the magnetic storage layer to inject spin-polarized electrons. The width of a write current pulse for writing information into the magnetic storage layer is larger than that of a read current pulse for reading information from the magnetic storage layer. The magnetic anisotropic magnetic field Hk of the magnetic storage layer is 50 Oe to 5,000 Oe. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了防止在读取操作期间的错误写入操作。解决方案：提供一种用于驱动包括具有磁存储元件的存储单元的磁存储器的方法，其中磁存储元件包括：磁性钉扎层，其在基本上垂直于膜表面的方向上具有磁化并且具有固定磁化方向; 磁性存储层，其在基本上垂直于膜表面的方向上具有磁化并且具有可变的磁化取向; 以及设置在磁性被钉扎层和磁性存储层之间的隧道势垒层。通过使电流脉冲通过磁存储层以注入自旋极化电子，可以使磁存储层的磁化取向反转。用于将信息写入磁存储层的写入电流脉冲的宽度大于用于从磁存储层读取信息的读取电流脉冲的宽度。磁存储层的磁各向异性磁场Hk为50Oe〜5,000Oe。版权所有（C）2009，JPO＆INPIT

92. 发明专利

JP2008252036A Magnetoresistive element and magnetic memory 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2008252036A
公开(公告)日：2008-10-16
申请号：JP2007094886
申请日：2007-03-30
申请人： Toshiba Corp , 株式会社東芝
发明人： KITAGAWA EIJI , YOSHIKAWA MASAHISA , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , H01L21/8246 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To reduce further current density required for magnetization reversal.
SOLUTION: A magnetoresistive element 10 includes a first free layer 15 in which a direction of magnetization changes by action of electrons with spin polarized; a second free layer 13 in which the direction of the magnetization changes by the action of the electrons with the spin polarized; a fixed layer 11 in which the direction of the magnetization is fixed; a first nonmagnetic layer 14 provided between the first free layer 15 and the second free layer 13; and a second nonmagnetic layer 12 provided between the second free layer 13 and the fixed layer 11. The relation between a product Ku1×V1 of a magnetic anisotropy constant Ku1 and activation volume V1 of the first free layer 15, and a product Ku2×V2 of a magnetic anisotropy constant Ku2 and activation volume V2 of the second free layer 13 satisfies Ku1×V1>Ku2×V2.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了减少磁化反转所需的进一步的电流密度。解决方案：磁阻元件10包括第一自由层15，其中磁化方向随着具有自旋极化的电子的作用而改变; 第二自由层13，其中磁化方向由具有自旋极化的电子的作用而变化; 固定层11，其中固定磁化方向; 设置在第一自由层15和第二自由层13之间的第一非磁性层14; 以及设置在第二自由层13和固定层11之间的第二非磁性层12.将磁各向异性常数Ku1的乘积Ku1×V1与第一自由层15的激活体积V1与乘积Ku2×V2 第二自由层13的磁各向异性常数Ku2和活化体积V2满足Ku1×V1> Ku2×V2。版权所有（C）2009，JPO＆INPIT

93. 发明专利

JP2007188578A Magnetoresistive random access memory and its write control method 有权
标题翻译：磁性随机访问存储器及其写控制方法
公开(公告)号：JP2007188578A
公开(公告)日：2007-07-26
申请号：JP2006005202
申请日：2006-01-12
申请人： Toshiba Corp , 株式会社東芝
发明人： SHIMOMURA NAOHARU , KISHI TATSUYA , TAKIZAWA RYOSUKE
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： G11C11/16
摘要： PROBLEM TO BE SOLVED: To prevent a recording layer of a TMR element from becoming an intermediate state as much as possible even when data is written to an MRAM.
SOLUTION: This write control method is provided with at least one memory cell. The memory cell is used for the magnetoresistance random access memory having a magnetoresistive effect element 1 as a storage element, which is provided with: the recording layer 6 having a magnetization easy axis and a magnetization hard axis and being variable in magnetizing direction; a reference layer 2 having a fixed magnetizing direction; and an insulation layer 4 arranged between the recording layer and reference layer. The method includes a step to apply a first and second magnetic fields on the recording layer so that an application period of the pulse-like first magnetic field substantially parallel with the magnetization easy axis of the recording layer and the pulse-like second magnetic field substantially parallel to the magnetization hard axis is overlapped, and a step to apply a pulse-like third magnetic field in the direction substantially the same as the direction of the first magnetic field on the recording layer at least once.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：即使当数据被写入MRAM时，也尽可能地防止TMR元件的记录层尽可能地变成中间状态。解决方案：该写控制方法具有至少一个存储单元。存储单元用于具有磁阻效应元件1作为存储元件的磁阻随机存取存储器，其具有：具有易磁化轴和磁化硬轴并且在磁化方向上可变的记录层6; 具有固定磁化方向的参考层2; 以及布置在记录层和参考层之间的绝缘层4。该方法包括在记录层上施加第一和第二磁场的步骤，使得脉冲状第一磁场的施加周期基本上与记录层的易磁化轴平行，脉冲状的第二磁场大致平行与磁化硬轴平行的重叠的步骤，以及在与记录层上的第一磁场的方向基本相同的方向上施加脉冲状的第三磁场的步骤至少一次。版权所有（C）2007，JPO＆INPIT

94. 发明专利

JP2007027424A Magneto-resistance effect element and magnetic random access memory 有权
标题翻译：磁阻效应元件和磁性随机存取存储器
公开(公告)号：JP2007027424A
公开(公告)日：2007-02-01
申请号：JP2005207628
申请日：2005-07-15
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKAYAMA MASAHIKO , KAI TADASHI , IKEGAWA SUMIO , FUKUZUMI YOSHIAKI , KISHI TATSUYA
IPC分类号： H01L43/08 , G11C11/15 , H01F10/08 , H01L21/8246 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To reduce erroneous writing and improve thermal stability. SOLUTION: A magneto-resistance effect element, a magneto-resistance effect element 10, is provided with a magnetization fixed layer 11 having a fixed magnetization direction, a magnetization free layer 13 having a changing magnetization direction, and a non-magnetic layer 12 provided between the magnetization fixed layer 11 and the magnetization free layer 13. The magnetization free layer 13 has an extending portion 10a extending in a first direction, and projecting portions 10b, 10c each projecting from a part other than an end of the side surface of the extending portion 10a in a second direction perpendicular to the first direction. The plane shape of the magnetization free layer 13 has 180-degree rotation symmetry and does not have a reflection symmetry. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：减少写入错误并提高热稳定性。解决方案：磁阻效应元件，磁阻效应元件10设置有具有固定的磁化方向的磁化固定层11，具有变化的磁化方向的磁化自由层13和非磁性的层12设置在磁化固定层11和磁化自由层13之间。磁化自由层13具有沿第一方向延伸的延伸部分10a，以及从除侧面之外的部分突出的突出部分10b，10c 延伸部分10a的表面在垂直于第一方向的第二方向上。磁化自由层13的平面形状具有180度的旋转对称性，并且不具有反射对称性。版权所有（C）2007，JPO＆INPIT

95. 发明专利

JP2006128565A Magnetic storage device 审中-公开
标题翻译：磁性存储器件
公开(公告)号：JP2006128565A
公开(公告)日：2006-05-18
申请号：JP2004318215
申请日：2004-11-01
申请人： Toshiba Corp , 株式会社東芝
发明人： UEDA TOMOMASA , AIKAWA HISANORI , KISHI TATSUYA , KAJIYAMA TAKESHI , IWATA YOSHIHISA , YOSHIKAWA MASAHISA , YODA HIROAKI
IPC分类号： H01L27/105 , H01L21/8246 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To reduce a current which is necessary for write of data regarding a magnetic storage device. SOLUTION: The magnetic storage device comprises a magnetic record layer 19D whose magnetization direction is reversed according to the direction of an applied magnetic field and a magnetized deposition layer 19B whose magnetization direction is fixed. It also comprises a memory cell 19 which stores information by magnetoresistive effect and a wiring layer 11 which extends in a first direction, is narrower than the magnetic recording layer 19D in a second direction at right angles to the first direction, and writes the information in the memory cell 19. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：减少写入关于磁存储装置的数据所需的电流。解决方案：磁存储装置包括磁记录层19D，其磁化方向根据施加磁场的方向反转，磁记录层19B的磁化方向固定。它还包括通过磁阻效应存储信息的存储单元19和沿着第一方向延伸的布线层11，在与第一方向成直角的第二方向上比磁记录层19D窄，并将信息写入存储单元19.版权所有（C）2006，JPO＆NCIPI

96. 发明专利

JP2004047027A Magnetic random access memory system and method for manufacturing magnetic random access memory 审中-公开
标题翻译：磁性随机访问存储器系统和制造磁性随机存取存储器的方法
公开(公告)号：JP2004047027A
公开(公告)日：2004-02-12
申请号：JP2002206172
申请日：2002-07-15
申请人： Toshiba Corp , 株式会社東芝
发明人： ASAO YOSHIAKI , IWATA YOSHIHISA , SAITO YOSHIAKI , YODA HIROAKI , UEDA TOMOMASA , AMANO MINORU , TAKAHASHI SHIGEKI , KISHI TATSUYA
IPC分类号： G01R31/28 , G11C11/15 , G11C29/00 , G11C29/56 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic random access memory system in which the irregularities of spins on a pin layer can be modified after assembly and electrical evaluation. SOLUTION: This magnetic random access memory system is provided with tunnel magnetic resistance elements 10, word lines WL1 to WLn, bit lines BL1 to BLm, a writing driver and a writing circuit 52 that can simultaneously select all writing drivers. The pin layer 12, insulating layer 13 and a memory layer are laminated on the tunnel magnetic resistance elements. The respective tunnel magnetic resistance elements are respectively arranged near crossing positions between the word lines WL1 to WLn and the bit lines BL1 to BLm and operate as memory cells MC11 to MCmn. In modifying the irregularities of spins on the pin layer of the tunnel magnetic resistance elements, a current supplying means makes current flow to at least one of the word lines or the bit lines. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种磁性随机存取存储器系统，其中可以在组装和电气评估之后修改针层上的自旋的不规则性。解决方案：该磁性随机存取存储器系统设置有隧道磁阻元件10，字线WL1至WLn，位线BL1至BLm，可同时选择所有写入驱动器的写入驱动器和写入电路52。引线层12，绝缘层13和存储层层叠在隧道磁阻元件上。各隧道磁阻元件分别布置在字线WL1至WLn和位线BL1至BLm之间的交叉位置附近，并作为存储单元MC11至MCmn工作。在修改隧道磁阻元件的引脚层上的自旋的不规则性时，电流供给装置使电流流到至少一个字线或位线。版权所有（C）2004，JPO

97. 发明专利

JP2003298025A Magnetic storage device 有权
标题翻译：磁性存储器件
公开(公告)号：JP2003298025A
公开(公告)日：2003-10-17
申请号：JP2002097889
申请日：2002-03-29
申请人： Toshiba Corp , 株式会社東芝
发明人： TAKAHASHI SHIGEKI , SAITO YOSHIAKI , UEDA TOMOMASA , YODA HIROAKI , AMANO MINORU , KISHI TATSUYA , NISHIYAMA KATSUYA , ASAO YOSHIAKI , IWATA YOSHIHISA
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： G11C11/1675
摘要： PROBLEM TO BE SOLVED: To provide a magnetic storage device which can prevent increase in the switching magnetic field and can realize stable storage holding operation, even if an element becomes microminiaturized.
SOLUTION: The magnetic storage device comprises a tunnel magnetoresistance effect element, having the junction including a recording layer which is formed of a ferromagnetic material in which the switching magnetic field changes with temperature, to change the magnetizing direction with external magnetic field, an insulation layer and a magnetized deposition layer formed of a ferromagnetic material, a temperature control layer laminated on the recording layer of the tunnel magnetoresistance effect element, and bit lines and digit lines which are allocated in the direction to cross with each other in order to give the current field for writing operation to the tunnel magnetoresistance effect element. When data is written to the tunnel magnetoresistance effect element, a current larger than that in the read operation is supplied.
COPYRIGHT: (C)2004,JPO
摘要翻译：解决的问题：即使元件变得微型化，提供一种可以防止开关磁场增加并且可以实现稳定的存储保持操作的磁存储装置。解决方案：磁存储装置包括隧道磁阻效应元件，其结点包括由开关磁场随温度变化的铁磁材料形成的记录层，以用外部磁场改变磁化方向，由铁磁材料形成的绝缘层和磁化沉积层，层叠在隧道磁阻效应元件的记录层上的温度控制层以及在彼此交叉的方向上分配的位线和数字线，以便给予隧道磁阻效应元件的写入操作的当前场。当数据被写入隧道磁阻效应元件时，提供大于读操作的电流。版权所有（C）2004，JPO

98. 发明专利

JP2003282842A Magnetic memory 审中-公开
标题翻译：磁记忆
公开(公告)号：JP2003282842A
公开(公告)日：2003-10-03
申请号：JP2003008781
申请日：2003-01-16
申请人： Toshiba Corp , 株式会社東芝
发明人： KISHI TATSUYA , AMANO MINORU , SAITO YOSHIAKI , TAKAHASHI SHIGEKI , NISHIYAMA KATSUYA , UEDA TOMOMASA , YODA HIROAKI , ASAO YOSHIAKI , IWATA YOSHIHISA
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a high integration reliable magnetic memory element of low consumption by applying a magnetic field efficiently to a magnetic storage layer using a smaller writing current than the present. SOLUTION: The magnetic memory comprises a magnetoresistive element (21) having a magnetic storage layer, a writing wiring (22, 23) running in a first direction on or under the magnetoresistive element. The magnetization direction of the magnetic storage layer is varied by the magnetic field generated when a current is applied to the writing wiring. The center of gravity (G) of the cross section of the writing wiring provided by cutting it in the perpendicular direction to the first direction is deviated from the center of the thickness (C) of the wiring at the center of gravity toward the magnetoresistive element. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：通过使用比目前更小的写入电流将磁场有效地施加到磁存储层来提供低消耗的高集成度可靠的磁存储元件。解决方案：磁存储器包括具有磁存储层的磁阻元件（21），在磁阻元件上或下方沿第一方向延伸的写入布线（22,23）。磁存储层的磁化方向由电流施加到写入布线时产生的磁场而变化。通过沿着与第一方向垂直的方向切割而提供的书写布线的横截面的重心（G）从布线重心朝向磁阻元件的厚度（C）的中心偏离。版权所有（C）2004，JPO

99. 发明专利

JP2008187048A MAGNETORESISTIVE EFFECT ELEMENT 审中-公开
公开(公告)号：JP2008187048A
公开(公告)日：2008-08-14
申请号：JP2007019973
申请日：2007-01-30
申请人： TOSHIBA CORP
发明人： YOSHIKAWA MASAHISA , KITAGAWA EIJI , SHIMOMURA NAOHARU , IKEGAWA SUMIO , KISHI TATSUYA , YODA HIROAKI , UEDA TOMOMASA
IPC分类号： H01L43/08 , H01L21/8246 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To achieve both reduction in writing currents and improvement in MR ratio at reading. SOLUTION: The magnetoresistive effect element comprises first and second ferromagnetic layers 11A and 11B of which magnetizing directions are fixed mutually opposite; a third ferromagnetic layer 12, which is arranged between the first and second ferromagnetic layers 11A and 11B with magnetizing direction changing; a first non magnetic layer 13A arranged between the first ferromagnetic layer 11A and the third ferromagnetic layer 12; and a second non magnetic layer 13B arranged between the second ferromagnetic layer 11B and the third ferromagnetic layer 12. When a reading voltage Ir is biased, MR ratio of a first unit U1 is in inverse state, while the MR ratio of a second unit U2 is in normal state. When writing voltages Iw"0" and Iw"1" are biased, the MR ratio of the first and second units U1 and U2 are both in the normal state. COPYRIGHT: (C)2008,JPO&INPIT

100. 发明专利

JP2002299574A MAGNETIC STORAGE ELEMENT, MAGNETIC STORAGE DEVICE AND PORTABLE TERMINAL 失效
公开(公告)号：JP2002299574A
公开(公告)日：2002-10-11
申请号：JP2001095976
申请日：2001-03-29
申请人： TOSHIBA CORP
发明人： SAITO YOSHIAKI , SUNAI MASAYUKI , AMANO MINORU , NAKAJIMA KENTARO , TAKAHASHI SHIGEKI , KISHI TATSUYA
IPC分类号： G11C11/14 , G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To improve power consumption, crosstalk and EM at the time of writing, in a magnetic storage element or a magnetic storage device. SOLUTION: Two write lines 2 and 3 are arranged in parallel in the vicinity of a TMR cell 1 and the easy axis of magnetization of the TMR cell 1 is inclined 45 deg. against the write lines. Two write lines 2 and 3 are provided with a magnetic shield 4 for interrupting the influence of external magnetic field at least in the vicinity of the TMR cell 1.

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