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91. 发明专利

JPH02103921A PATTERN FORMATION METHOD AND MASK FOR PATTERN FORMATION 失效
公开(公告)号：JPH02103921A
公开(公告)日：1990-04-17
申请号：JP27798588
申请日：1988-11-01
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOSHIOKA NOBUYUKI
IPC分类号： G03F1/68 , G03F1/76 , G03F1/78 , G03F1/80 , H01L21/027 , H01L21/338 , H01L29/812
摘要： PURPOSE:To enable formation of a complete desired pattern by a lift-off method by making the exposure beam absorber of a mask into a projection or a recess, respectively, according to the positive type or the negative type of a resist film at a boundary between a pattern region and a region other than it. CONSTITUTION:In an X-ray mask 4, X-ray absorbers 4b at the boundaries C between T-type pattern region A and regions B other than it are made into projections in case that a resist film is positive type and are made into recesses in case of negative type. Next, an X-ray sensitive positive resist film 3 is formed on a semiconductor substrate 1, and is exposed with X-rays using a mask 4. It becomes X-ray absorbing distribution (D1>D2>D3>D4) in accordance with the thickness of the X-ray absorber 4b of the mask 4. When this is developed, it becomes a resist pattern wherein the boundaries C between the T-type pattern region and other regions B are peaked sharply. When gate metal 5 is deposited thereon, the metal 6 at the region A and the regions B is separated by the peaked resist at the boundary parts C. When the resist film 3 is removed, the metals at the regions B are lifted off, and a T-type gate electrode pattern is formed.

92. 发明专利

JPS63104373A SEMICONDUCTOR MEMORY DEVICE 失效
公开(公告)号：JPS63104373A
公开(公告)日：1988-05-09
申请号：JP25011386
申请日：1986-10-20
申请人： MITSUBISHI ELECTRIC CORP
发明人： MIHASHI JUNICHI , NAKAJIMA MASAYUKI , YOSHIOKA NOBUYUKI , MIYATAKE HIROSHI
IPC分类号： H01L21/8244 , H01L27/11
摘要： PURPOSE:To realize high integration and high densification, by making at least one of respective combinations of components, which compose static memory cells respectively, be formed into two layers on a polycrystal silicon layer or the like piled on an insulating film. CONSTITUTION:Memory nodes 2a, an insulating film 3 for element isolation, gate insulating films 4a and 5a are formed to compose driving transistors M2. A polycrystal silicon film 10 is formed on these driving transistors through insulating films 6, and gate insulating films 4b and 5b are formed on this polycrystal silicon film 10 so as to form transmission transistors M3. Next, wiring parts 7a, power lines 7b, and high resistance load elements 8 are formed on the prescribed parts of the polycrystal silicon layer 10, and moreover a passivation film 11 is formed on them.

93. 发明专利

JPS63104352A MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPS63104352A
公开(公告)日：1988-05-09
申请号：JP25011786
申请日：1986-10-20
申请人： MITSUBISHI ELECTRIC CORP
发明人： MIYATAKE HIROSHI , YOSHIOKA NOBUYUKI , KONO YOSHIO , SHIMANO HIROKI
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/822 , H01L27/04
摘要： PURPOSE:To form an interconnection layer which is highly resistive to electricity by implanting oxygen ions or nitrogen ions into a polycrystal silicon layer that functions as an interconnection layer and leaving a thin polycrystal silicon layer at an upper side of the above layer after heat treatment, thereby forming a silicon oxide film or a silicon nitriding film at its lower side. CONSTITUTION:An insulating film 12 and a polycrystal silicon layer 13 are deposited on a silicon semiconductor 11. And after oxygen ions are implanted into the layer 13, its layer is heat-treated Then, a silicon oxide film 14 is formed at a great part of the lower side of the layer 13 and at a remaining upper part of the layer 13, the polycrystal silicon layer 13 is left. Being shaped fully thinner, the layer 13 renders its electric resistance value more intense and what is more, oxygen ions which ere left in the layer make its electric resistance value higher than that developed in a state where oxygen is free from survival. Subsequently, as the layer 13 and the film 14 is selectively removed by a patterning process, a higher resistance interconnection layer 15 is formed.

94. 发明专利

JPS62152126A MASK FOR X-RAY EXPOSURE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS62152126A
公开(公告)日：1987-07-07
申请号：JP29640985
申请日：1985-12-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： FUJIWARA NOBUO , YOSHIOKA NOBUYUKI , NISHIKAWA KIICHI , SHIMANO HIROKI
IPC分类号： G03F1/00 , G03F1/22 , H01L21/027 , H01L21/30
摘要： PURPOSE:To improve the transfer precision of a mask pattern by a method wherein, when a mask substrate is arranged on the position for X-ray exposure, the side of X-ray absorbing pattern is formed to be made in parallel with the exposing X-rays entering into wide angular range with the mask substrate. CONSTITUTION:A mask substrate 2, a polymer layer 4 and a metallic layer 5 are laminated on a substrate 3b to form recessions 4a by reactive etching process using ion beam divergence focusing system. These recessions 4a are plated and filled with an X-ray absorbing material and then the polymer layer 4 is removed to form an X-ray exposing mask comprising the X-ray absorbing pattern 1 and the mask substrate 2. When the mask substrate 2 is arranged on the position for X-ray exposure, the X-ray exposing mask can be used so that the side of X-ray absorbing pattern 1 may be made in parallel with the exposing X-rays 20 entering into wide angular range with the mask substrate 2 to transfer a mask pattern to a silicon wafer 12 subject to high precision and no distortion at all.

95. 发明专利

JPS62144328A X-RAY MASK AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS62144328A
公开(公告)日：1987-06-27
申请号：JP28680785
申请日：1985-12-18
申请人： MITSUBISHI ELECTRIC CORP
发明人： SHIMANO HIROKI , YOSHIOKA NOBUYUKI , NISHIKAWA KIICHI , FUJIWARA NOBUO
IPC分类号： G03F1/00 , G03F1/22 , G03F1/58 , H01L21/027 , H01L21/30
摘要： PURPOSE:To obtain an X-ray mask having a high mask contrast, and to form a fine resist pattern having a steep edge profile by forming an X-ray absorption band pattern in multilayer film structure in which X-ray penetrating substances and substances having a large X-ray absorption coefficient are superposed alternately. CONSTITUTION:A resist pattern 4 is shaped onto an X-ray penetrating film 2. Thin-films 6, 7 consisting of (AuPd,C), (W,C), (ReW,C), etc. are evaporated alternately at proper intervals on the film, on which the resist pattern 4 is formed, by MBE, ion cluster beams, etc., thus shaping an X-ray absorption band 5 having multilayer film structure. The resist pattern 4 and the X-ray absorption band 5 on the pattern 4 are removed, and etching is conducted so as to leave a susceptor 1a for a substrate 1. Consequently, an X-ray mask having an X-ray absorption band pattern 5a having multilayer film structure is shaped. When X-rays 8 are projected to the X-ray mask, X-rays transmitting the X-ray absorption band pattern 5a are reduced extremely, thus acquiring the X-ray mask having a high mask contrast.

96. 发明专利

JPS6287955A FORMATION OF PATTERN 失效
公开(公告)号：JPS6287955A
公开(公告)日：1987-04-22
申请号：JP22930885
申请日：1985-10-14
申请人： MITSUBISHI ELECTRIC CORP
发明人： SUZUKI YOSHIKI , YOSHIOKA NOBUYUKI , ISHIO NORIAKI
IPC分类号： G03F7/20 , G03F7/038 , G03F7/30 , G03F7/32 , H01L21/027 , H01L21/30
摘要： PURPOSE:To improve definition and dry etching resistance by forming a thin film consisting of chlorinated polymethyl styrene one a substrate and selectively irradiating PdLalpha rays onto the thin film, then developing the same with a developing solvent contg. ethoxyethanol and/or methoxyethanol. CONSTITUTION:The thin film consisting of the chlorinated polymethyl styrene having 10-40% rate of chlorination and 400,000-700,000 weigh average mol. wt. is formed on the substrate and the PdLalpha rays are selectively irradiated onto the thin film; thereafter, the thin film is developed with the developing solvent contg. ethoxyethanol and/or methoxyethanol. The sensitivity Dg of the chlorinated polymethyl styrene with the PdLalpha rays increases with an increase in the rate of chlorination as shown in the figure. While the sensitivity Dg of the chlorinated polymethyl styrene having 20% rate of chlorination is 300mJ/cm , the sensitivity Dg of the chlorinated polymethyl styrene having 80% rate of chlorination is 120mJ/cm ; therefore, the sensitivity of the chlorinated polymethyl styrene can be increased by increasing the weight average mol. wt and rate of chlorination of the chlorinated polymethyl styrene. The pattern of a submicron region is thus satisfactorily formed.

97. 发明专利

JPS61172334A PLASMA PROCESSOR 失效
公开(公告)号：JPS61172334A
公开(公告)日：1986-08-04
申请号：JP1382485
申请日：1985-01-28
申请人： MITSUBISHI ELECTRIC CORP
发明人： NAKAO SHUJI , YOSHIOKA NOBUYUKI , NISHIOKA KYUSAKU , CHIBA AKIRA
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To make the high speed wafer etching process feasible by a method wherein the magnetic field for producing electron cyclotron resonance (ECR) plasma in a magnetic microwave plasma processor is focussed on wafers by means of air-core coils. CONSTITUTION:The space between wafers 8 and a vacuum vessel 16 is impressed with high-frequency electric field by a high-frequency power supply 12 to negative-bias the wafers 8 effectively into plasma 15 for etching process with high anisotropy. When air-core coils 5 indispensable for producing and focusing ECR plasma arc mounted on the same plane as that of wafers 8, the flux density is maximized at wafers 8 while etching speed is also maximized. Finally the DC bias voltage of wafers 8 may be controlled further controlling the anisotropy of etching process since the space between wafers 8 and the vacuum vessel 16 is impressed with high-frequency electric field aside from the plasma production.

98. 发明专利

JPS61129841A Equipment for manufacturing semiconductor 失效
标题翻译：制造半导体设备
公开(公告)号：JPS61129841A
公开(公告)日：1986-06-17
申请号：JP25341084
申请日：1984-11-28
申请人： Mitsubishi Electric Corp
发明人： ISHIO NORIAKI , HOSHIKA HARUYUKI , YOSHIOKA NOBUYUKI
IPC分类号： H01L21/67 , H01L21/68 , H01L21/683
CPC分类号： H01L21/68 , H01L21/6838
摘要： PURPOSE:To facilitate the centering and alignment of wafers with different diameter dimensions by a method wherein a semiconductor wafer is moved by suction to a supporting base, and this wafer is brought into abutment against a cylinder conical in inner surface which is arranged in opposition to the supporting base. CONSTITUTION:The conical base cup 6 (cylindrical) of the titled equipment is supported with a supporting member 7, and the horizontal cross-section of the cup 6 is formed 2-dividably in right-left symmetry in the axial direction by having a part 61 corresponding to the facet of the semiconductor wafer 1 with a shape similar to that of the wafer 1. The wafer 1 is sucked to the wafer supporting base of this producer and moved immediately downward the conical cup 6, and the suction is released at this position. Thereafter, while the supporting base 2 is aligned by gradual ascent, this base 2 is set stationary at the part of coincidence between the wafer 1 and the conical cup 6 in cross-sectional shape, thus completing alignment. The wafer 1 is sucked to the supporting base 2, the the conical cup 6 is divided into two, resulting in the easy centering and alignment of wafers 1 with different diameter dimensions.
摘要翻译：目的：为了通过其中半导体晶片通过抽吸移动到支撑基底的方法来促进具有不同直径尺寸的晶片的对中和对准，并且该晶片与内表面中的圆锥体抵接，该圆柱体与内表面相对布置配套基地。构成：标题设备的锥形基座杯6（圆柱形）由支撑构件7支撑，并且杯6的水平横截面通过具有一部分在左右对称地沿轴向形成为可分开的对应于具有与晶片1相似形状的半导体晶片1的刻面。晶片1被吸入该制造商的晶片支撑基座并立即向下移动锥形杯6，并且在该位置释放吸力位置。此后，当支撑基座2通过逐渐上升对准时，该基座2在晶片1和圆锥形杯6之间的重合部分的横截面形状中被固定，从而完成对准。将晶片1吸引到支撑基座2，将锥形杯6分成两部分，从而可以容易地对准具有不同直径尺寸的晶片1。

99. 发明专利

JPS61128526A Plasma etching device 失效
标题翻译：等离子体蚀刻装置
公开(公告)号：JPS61128526A
公开(公告)日：1986-06-16
申请号：JP25073684
申请日：1984-11-27
申请人： Mitsubishi Electric Corp
发明人： CHIBA AKIRA , NAKAO SHIYAKUJI , YOSHIOKA NOBUYUKI , NISHIOKA KYUSAKU
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
CPC分类号： H01L21/302
摘要： PURPOSE:To keep the concentration of plasma on a body to be treated constant, and to enable uniform etching having reproducibility by confining plasma onto the body to be treated by a magnetic field and revolving the magnetic field on the body to be treated. CONSTITUTION:High-frequency power is applied between an upper electrode 21 and a lower electrode 22 from a high-frequency power supply 1, thus generating plasma extending over the whole region between both electrodes 21, 22. When a magneticfield formed by opposite N and S poles is shaped at that time, however, plasma localized on a body to be treated 5 is generated because plasma is confined by the magnetic field. When the direction of the magnetic field electrically covering the body to be treated 5 is changed and the direction of the magnetic field is turned around the central axis of the body to be treated 5, localized plasma also transfers. When the intensity and speed of revolution of the magnetic field are increased at that time, localized shifting plasma is formed in one having uniform concentration, thus enabling equal etching.
摘要翻译：目的：使等离子体的浓度保持在要被处理的身体上，并且通过将等离子体通过磁场限制待处理的身体并使待处理的身体上的磁场旋转来实现具有再现性的均匀蚀刻。构成：从高频电源1向上电极21和下电极22之间施加高频电力，由此产生在两电极21,22之间的整个区域上延伸的等离子体。当由相反N形成的磁场此时S极成形，然而，由于等离子体被磁场所限制，所以产生位于被处理体5上的等离子体。当电性地覆盖被处理体5的磁场的方向发生变化，并且磁场的方向围绕被处理体5的中心轴线转动时，局部等离子体也转移。当此时磁场的强度和转速增加时，局部移位等离子体形成为具有均匀浓度的等离子体，从而能够进行相等的蚀刻。

100. 发明专利

JPS61110950A X-ray generator 失效
标题翻译： X射线发生器
公开(公告)号：JPS61110950A
公开(公告)日：1986-05-29
申请号：JP23475484
申请日：1984-11-05
申请人： Mitsubishi Electric Corp
发明人： SUZUKI YOSHIKI , HOSHIKA HARUYUKI , YOSHIOKA NOBUYUKI , ISHIO NORIAKI , CHIBA AKIRA
IPC分类号： H01J35/10
CPC分类号： H01J35/10
摘要： PURPOSE:To reduce the size of a rotary metallic part and minimize noise and vibration generated by the rotary metallic part by irradiating electron rays upon a part of the conical cut surface while rotating the rotary metallic part along the axis of the conical form in a vacuum. CONSTITUTION:A rotary metallic part 4 having a conical cut 5 is made of a metallic material such as Pd, Al, Cu, W or Mo or one of the complexes of these elements. The inner area of the metallic part 4 is cooled by cooling water 3. X-rays are produced by irradiated electron rays upon a part of the surface of the cut wall while rotating the metallic part 4 along the axis of the conical form. Since the diameter of the rotary metallic part 4 may be at most 5mm-20mm, the size of the metallic part 4 can be reduced and a large space can be secured for the cooling water flow path. Furthermore, since the rotary metallic part 4 is of the small type, it is possible to produce an X-ray generator generating almost no vibration and noise.
摘要翻译：目的：为了减小旋转金属部件的尺寸，并通过在圆锥形切割面的一部分上照射电子射线，使旋转金属部件沿着圆锥形的轴线在真空中旋转而使由旋转金属部件产生的噪音和振动最小化。构成：具有锥形切口5的旋转金属部件4由诸如Pd，Al，Cu，W或Mo的金属材料或这些元件的复合物之一制成。金属部件4的内部区域被冷却水3冷却。通过沿着锥形的轴线旋转金属部件4，在切割壁的一部分表面上照射的电子射线产生X射线。由于旋转金属部件4的直径可以至多为5mm-20mm，所以可以减小金属部件4的尺寸，并且可以确保冷却水流动路径的大的空间。此外，由于旋转金属部件4是小型的，所以可以产生几乎不产生振动和噪音的X射线发生器。

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