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91. 发明专利

JPS63221687A SUPERCONDUCTING TRANSISTOR 失效
公开(公告)号：JPS63221687A
公开(公告)日：1988-09-14
申请号：JP5401587
申请日：1987-03-11
申请人： HITACHI LTD
发明人： NISHINO JUICHI , HATANO MUTSUKO , HASEGAWA HARUHIRO , KAWABE USHIO
IPC分类号： H01L39/22
摘要： PURPOSE:To obtain a highly integrated circuit in which a so-called short-channel effect is less, and many superconducting transistors can be manufactured without loss of the properties of a superconductor by forming part of electrodes formed of the superconductor upper than the surface of a channel forming region and the remaining part lower than the surface of the region. CONSTITUTION:The source and drain of a superconducting transistor are composed of 2 layers of a superconductive electrode 3 and a high impurity concentration layer 2. The upper surfaces of the source and the drain are formed upper than part formed with a channel, i.e., the surface of a semiconductor substrate 1 in contact with a gate insulating film 4, and the lower surfaces of the source and the drain are located under the surface of, or inside, the substrate 1. Since a junction formed by the layer 2 becomes shallow, a leakage current which cannot be controlled by a gate voltage by means of short channel effect is not generated. Even when an integrated circuit formed by integration is formed, a stable operation can be performed, and the yield of manufacture can be enhanced.

92. 发明专利

JPS6345873A SUPERCONDUCTING TRANSISTOR 失效
公开(公告)号：JPS6345873A
公开(公告)日：1988-02-26
申请号：JP18845186
申请日：1986-08-13
申请人： HITACHI LTD
发明人： NISHINO JUICHI , KAWABE USHIO , HATANO MUTSUKO
IPC分类号： H01L29/78 , H01L39/02 , H01L39/22
摘要： PURPOSE:To efficiently control wave functions attributable to superconduction even in the presence of a control electrode with its width narrowed by a method wherein a structure is adopted wherein a high impurity concentration layer in contact with a superconducting electrode is caused to extend to a location just under an end of the control electrode. CONSTITUTION:On a semiconductor substrate 1, a gate insulating film 2 that is an evaporation-formed SiO thin film and a control electrode 3 that is a thin Mo film are deposited, which are then subjected to reactive ion etching with a resist pattern serving as a mask. Next, with the gate insulating film 2 and control electrode 3 serving as a mask, Si ions are implanted into the semiconductor substrate 1, for the formation and activation of a high impurity concentration layer 4. A stop follows wherein Nb is deposited by direct current magnetron suputtering, the Nb film is subjected to reactive plasma etching with a photoresist pattern serving as a mask, for the construction of two superconducting electrodes 6.

93. 发明专利

JPS6345871A SUPERCONDUCTING DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS6345871A
公开(公告)日：1988-02-26
申请号：JP18844786
申请日：1986-08-13
申请人： HITACHI LTD
发明人： NISHINO JUICHI , KAWABE USHIO , HATANO MUTSUKO
IPC分类号： H01L39/22 , H01L39/24
摘要： PURPOSE:To improve device characteristics and uniformity in a counter electrode type superconductive weak coupling device wherein normal conductors are linked together by a method wherein proper material and structure are chosen so that no superconductive weak coupling is formed between the ends of superconducting electrodes facing each other. CONSTITUTION:An approximately 100nm-thick thermal oxide film is formed on the surface of a normal conductor 1 and subjected to etching for the formation of an insulating layer 2. A step follows wherein an approximately 150 nm-thick Nb is deposited on the surface of the normal conductor 1 and is subjected to etching for the formation of superconducting electrodes 3. The superconducting electrodes 3 is 25mum-thick and there is a 0.15mum-wide gap between the portions, facing each other, of the two superconducting electrodes 3. There is no direct contact, at the right and left ends, between the superconducting electrodes 3 and normal conductor 1, which eliminate the possibility of the formation of a superconductive weak coupling at these points.

94. 发明专利

JP2003168645A SEMICONDUCTOR THIN FILM DEVICE, ITS MANUFACTURING METHOD, AND IMAGE DISPLAY DEVICE 审中-公开
公开(公告)号：JP2003168645A
公开(公告)日：2003-06-13
申请号：JP2001368078
申请日：2001-12-03
申请人： HITACHI LTD
发明人： HATANO MUTSUKO , YAMAGUCHI SHINYA , SHIBA TAKEO
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To control grain boundaries, particle diameters, and crystal orientations on an insulating substrate. SOLUTION: A semiconductor thin film device has a semiconductor thin film having a thickness of ≤200 nm and formed on an insulating transparent substrate having a distortion spot of ≤600°. The semiconductor thin film has an area where first semiconductor thin film areas having defect densities of 17 cm -3 and second semiconductor thin film areas having defect densities of ≥1×10 17 cm -3 are alternately arranged in a stripe-like state. The first semiconductor thin film areas have widths broader than the second semiconductor thin film areas have. Consequently, a semiconductor thin film device having a high-quality semiconductor thin film can be obtained. COPYRIGHT: (C)2003,JPO

95. 发明专利

JP2003124230A THIN FILM TRANSISTOR DEVICE, METHOD FOR MANUFACTURING THE DEVICE, AND IMAGE DISPLAY APPARATUS USING THE DEVICE 审中-公开
公开(公告)号：JP2003124230A
公开(公告)日：2003-04-25
申请号：JP2001314719
申请日：2001-10-12
申请人： HITACHI LTD
发明人： YAMAGUCHI SHINYA , HATANO MUTSUKO , SHIBA TAKEO
IPC分类号： G02F1/1345 , G02F1/1368 , G09F9/30 , G09F9/35 , H01L21/20 , H01L21/268 , H01L21/336 , H01L21/77 , H01L27/02 , H01L27/12 , H01L29/04 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a high function thin film transistor device wherein the occurrence of a defect in a crystalline thin film forming the thin film transistor is reduced. SOLUTION: There is obtained a high function thin film transistor device wherein the occurrence of a defect is sharply reduced by scanning laser light laterally of Si or the other element of a IV group (one from among of C, Si, Ge, Sn, Pb or their mixed crystal) thin film in which direction crystal grains of the thin film are most likely to be grown, and a high quality polycrystal is formed at a controlled position.

96. 发明专利

JP2002231958A THIN FILM TRANSISTOR AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2002231958A
公开(公告)日：2002-08-16
申请号：JP2001025531
申请日：2001-02-01
申请人： HITACHI LTD
发明人： YAMAGUCHI SHINYA , SHIBA TAKEO , HATANO MUTSUKO , BOKU NARIMOTO
IPC分类号： G02F1/1368 , H01L21/20 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a technique for materializing a polycrystalline thin film having crystal structure capable of materializing high mobility as regards a positive hole carrier, by suppressing the grain boundary dispersion and lessening the surface irregularity in a cryogenic poly-Si thin film to serve as the element material of a thin film transistor, so as to materialize an image display of high performance and large area at low cost. SOLUTION: A thin film transistor device can materialize high mobility TFT by introducing Ge into the polycrystalline Si film, and varying Ge composition ratio between a crystal grain 7 and a crystal grain boundary 8 by the phase separation accompanying the crystallization thereby suppressing the carrier scattering factors at the crystal grain boundary 8, and besides by suppressing the surface irregularity, making use of the volume difference of the crystals.

97. 发明专利

JPH11121752A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH11121752A
公开(公告)日：1999-04-30
申请号：JP28016797
申请日：1997-10-14
申请人： HITACHI LTD
发明人： HATANO MUTSUKO , AKIMOTO HAJIME
IPC分类号： H01L21/265 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To make it possible to constitute a MIS field-effect transistor, which is actuated on a low-cost insulating board in a low voltage and at a high speed, is highly reliable and consists of a polycrystalline silicon thin film, by a method wherein an excimer laser having a prescribed wavelength irradiates the surface of the polycrystalline silicon thin film to form a gate insulating film. SOLUTION: An excimer laser irradiates an amorphous silicon thin film layer 1 deposited on an insulative substrate 10, which consists of glass, by a CVD method, whereby the thin film layer 1 is crystallized to form a polycrystalline silicon thin film layer 9 on the substrate 10. Subsequently, the excimer laser irradiates the surface of the thin film layer 9 in an oxygen atmosphere and a gate insulating film 17 consisting of an SiO2 film is formed on the layer 9. Here, when a laser beam of an ultraviolet-range wavelength (shorter than 400 nm) irradiates the layer 9 being put in the oxygen atmosphere, the surface of the layer 9 not only can be locally heated but also a reaction in the interface between the layer 9 and the film 17 can be accelerated. Moreover, an oxide film is a linearity proportional region until its thickenss is a thickness of 100 nm and the thickness of the oxide film is increased in proportion to the number of times of laser irradiation.

98. 发明专利

JPH1131852A SUPERCONDUCTING DEVICE 失效
公开(公告)号：JPH1131852A
公开(公告)日：1999-02-02
申请号：JP17432698
申请日：1998-06-22
申请人： HITACHI LTD
发明人： NISHINO JUICHI , KAWABE USHIO , TARUYA YOSHINOBU , AIDA TOSHIYUKI , FUKAZAWA TOKUMI , KOMINAMI SHINYA , HATANO MUTSUKO
IPC分类号： H01L39/22 , C01G1/00 , C01G3/00 , C23C14/08 , C30B29/22 , H01B12/00 , H01L39/24
摘要： PROBLEM TO BE SOLVED: To stabilize the operation against temperature change and enable a superconducting device to operate at a high temperature of a liquid nitrogen temperature or higher, by providing the c axis of the crystal of an oxide superconductor that constitutes the superconducting device to be substantially vertical to the direction of a superconducting electromagnetic wave that flows in the oxide superconductor. SOLUTION: On a substrate 11 formed of single crystal SrTiO3 , a superconductor having a composition of (La0.9 Sr0.1 )2 CuO4 is deposited for a prescribed thickness by sputtering so as to permit the c axis of the crystal to be vertical to the substrate 11. A weakly coupling part 9 having a prescribed thickness is formed by performing Ar ion etching on a part of a heated superconductor, which is heated in a prescribed oxygen atmosphere, and a photoconductive semiconductor 8 composed of CdS is formed on the weakly coupling part 9. The value of a current that flows in the X axis direction of the semiconductor 8 can be easily controlled by projecting a fine intensity light, and the semiconductor operates as a highly sensitive and high speed photo detecting device. Thus, the superconducting device having the superconducting weakly coupled part that operates at a low temperature is provided without deteriorating the superconducting characteristics of the Ba-Y-Cu oxide.

99. 发明专利

JP2515751B2 失效
公开(公告)号：JP2515751B2
公开(公告)日：1996-07-10
申请号：JP18845186
申请日：1986-08-13
申请人： HITACHI LTD
发明人： NISHINO JUICHI , KAWABE USHIO , HATANO MUTSUKO
IPC分类号： H01L29/78 , H01L39/02 , H01L39/22

100. 发明专利

JPH07176800A SUPERCONDUCTING SIGNAL PROCESSOR 失效
公开(公告)号：JPH07176800A
公开(公告)日：1995-07-14
申请号：JP31954893
申请日：1993-12-20
申请人： HITACHI LTD
发明人： HATANO MUTSUKO , SAITO KAZUO , SUGA MITSUO , TAKAGI KAZUMASA
IPC分类号： H01L39/22 , G06J1/00 , H03H17/02
摘要： PURPOSE:To process signals as a digital filter and in Fourier transform at high speed and with high sensitivity, by passing all of output current of a first to fourth superconducting electron wave elements through an inductance, and detecting the current by means of a Josephson magnetic flux quantum interference type element, composed of an inductance and Josephson elements, connected with the superconducting electron wave elements. CONSTITUTION:Bias current is removed from the output current of detectors, and the Andreyev reflected wave that contributes to interference is extracted. Positive D.C. bias current plus input signal current is applied to two 201, 203 of six-input superconducting electron wave elements 201-204, and negative D.C. bias current plus input signal current is applied to the other two 202, 204. The detector electrodes of the superconducting electron wave elements 201 and 202, and 203 and 204 are connected with each other, respectively, and an inductance 210 is placed between the respective connections. The current passing through the inductance 210 is detected using a Josephson magnetic flux quantum interference type element composed of an inductance 211 and Josephson junctions 212, 213.

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