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91. 发明专利

JPS6175554A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS6175554A
公开(公告)日：1986-04-17
申请号：JP19666484
申请日：1984-09-21
申请人： Hitachi Ltd
发明人： AKEYAMA MASAMOTO , OKIKAWA SUSUMU
IPC分类号： H01L21/60 , H01L23/49 , H01L23/495
CPC分类号： H01L23/4952 , H01L2224/32245 , H01L2224/45 , H01L2224/45144 , H01L2224/45565 , H01L2224/45572 , H01L2224/456 , H01L2224/45647 , H01L2224/48 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/00011 , H01L2924/01029 , H01L2924/01079 , H01L2924/01082 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2224/45686 , H01L2924/00012 , H01L2924/00015 , H01L2924/01033
摘要： PURPOSE:To strengthen the bonding between wire surface and package forming resin as compared with that of wire consisting of gold only and prevent exfolia tion at the interface of wire and resin by electrically connecting pellet and lead with a wire consisting of copper-clad gold. CONSTITUTION:A wire 6 to be used for electrical connection between pellet 1 and lead 5 is formed by placing gold wire 6a with copper 6b. The physical and chemical characteristics of gold can be used and bonding ability of copper with resin can also be utilized by forming a wire through coverage of copper 6b at the surface. Thereby, stronger bonding between package forming resin 7 and lead 6 can be attained in comparison with the case where a wire consisting only of gold is used for electrical connection.
摘要翻译：目的：为了加强线材表面和成型包装树脂之间的接合，与仅由金子组成的线材相比，可以防止钢丝和树脂界面的剥落，并通过由铜包金线构成的导线进行电连接。构成：通过将金线6a与铜6b放置而形成用于颗粒1和引线5之间的电连接的导线6。可以使用金的物理和化学特性，也可以通过在表面覆盖铜6b形成导线来利用铜与树脂的结合能力。因此，与仅使用黄金的导线用于电连接的情况相比，可以获得封装形成树脂7和引线6之间的更强的结合。

92. 发明专利

JPS6146035A Manufacture of semiconductor device 失效
标题翻译：半导体器件的制造
公开(公告)号：JPS6146035A
公开(公告)日：1986-03-06
申请号：JP16638884
申请日：1984-08-10
申请人： Hitachi Ltd
发明人： OKIKAWA SUSUMU , MIKINO HIROSHI , KITAMURA WAHEI , SUZUKI HIROMICHI
IPC分类号： H01L21/60 , H01L21/603
CPC分类号： H01L2224/32225 , H01L2224/32245 , H01L2224/43 , H01L2224/45 , H01L2224/45015 , H01L2224/45124 , H01L2224/48 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/48699 , H01L2224/73265 , H01L2224/78 , H01L2224/78301 , H01L2224/85 , H01L2224/85009 , H01L2224/85045 , H01L2224/85181 , H01L2924/01013 , H01L2924/01014 , H01L2924/15153 , H01L2924/15165 , H01L2924/181 , H01L2924/20753 , H01L2924/00014 , H01L2924/00012 , H01L2924/00 , H01L2924/013
摘要： PURPOSE:To allow the hardness of a pole to be within an optimum range and thereby obtain excellent bonding performance, by annealing a bonding wire of aluminum or an aluminum alloy before it is connected. CONSTITUTION:A bonding wire 6 made of aluminum and a substance other than aluminum is annealed before it is used to connect together a bonding pad 5 formed on a semiconductor pellet 3 and a conductor layer 14 formed on a member than the pellet 3. For example, the wire 6 is made of aluminum containing 1wt% of silicon and has a diameter of 30mum. Before being used for wire bonding, this wire 6 is heat-treated under predetermined temperature conditions in a continuous annealing furnace. In this way, bonding using an aluminum alloy wire is made possible to reduce costs. In addition, the hardness of the aluminum ball 6a can be selected to fall within a specific range, so that it is possible to improve bonding performance and bonding strength.
摘要翻译：目的：为了使极点的硬度处于最佳范围内，通过在连接之前对铝或铝合金的接合线进行退火，可获得良好的接合性能。构成：将由铝制成的接合线6和铝以外的物质进行退火，然后将其形成在半导体芯片3上的接合焊盘5和形成在构件上的导体层14连接在一起。例如，，电线6由含有1重量％硅的铝制成，直径为30μm。在用于引线接合之前，将该导线6在连续退火炉中在预定温度条件下进行热处理。以这种方式，可以使用铝合金线进行接合以降低成本。此外，铝球6a的硬度可以选择在特定范围内，从而可以提高接合性能和接合强度。

93. 发明专利

JPS60195945A Wire bonding device 失效
标题翻译：电线连接装置
公开(公告)号：JPS60195945A
公开(公告)日：1985-10-04
申请号：JP5094884
申请日：1984-03-19
申请人： Hitachi Ltd
发明人： OKIKAWA SUSUMU , KITAMURA WAHEI , SUZUKI HIROMICHI , MIKINO HIROSHI
IPC分类号： H01L21/60
CPC分类号： H01L2224/48091 , H01L2224/48247 , H01L2224/78 , H01L2224/78301 , H01L2224/85 , H01L2224/85205 , H01L2924/01082 , H01L2924/00014 , H01L2924/00012
摘要： PURPOSE:To preferably bond wires in high reliability by forming projections on a supporting base, disposing a pressing member at plane position different from the projections, and constructing to a slightly deflect leads when a lead frame is pressed by both. CONSTITUTION:A semiconductor structure 1 is moved on a heat block 4, stopped at the prescribed position, and when a heat block 4 is moved upward, a lead frame 3 is contacted with the ends of pressing pieces 24, 24a of a pressing member 14 on the upper surface, and interposed tightly between a lower plate 12 and the member 14. Leads 11 are contacted with a projection 18 and a plane projection 16 on the lower surface, and with the end of the piece 24 at the intermediate upper surface,and the leads 11 are interposed at the intermediate positions by the elastic force of the piece 24 by the contacting force in the slightly downwardly deflected state. Thus, even if irregular thickness or irregular surface flatness occurs between the leads 11, it is absorbed by the deflection of the leads, and the all leads are reliably supported.
摘要翻译：目的：通过在支撑基座上形成凸起来优选地将导线以高可靠性接合，将按压构件设置在与凸起不同的平面位置处，并且当引线框架被两者按压时构造成稍微偏转的引线。结构：半导体结构1在加热块4上移动，停止在规定位置，当加热块4向上移动时，引线框架3与按压部件14的按压片24,24a的端部接触在上表面上并且牢固地夹在下板12和构件14之间。引线11与下表面上的突起18和平面突起16接触，并且在件24的端部处于中间上表面处，并且引线11通过在略微向下偏转的状态下的接触力通过件24的弹力插入中间位置。因此，即使在引线11之间发生不规则的厚度或不规则的表面平坦度，它被引线的偏转所吸收，并且所有的引线被可靠地支撑。

94. 发明专利

JPS60161650A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS60161650A
公开(公告)日：1985-08-23
申请号：JP1523184
申请日：1984-02-01
申请人： HITACHI LTD , HITACHI METALS LTD , TANAKA ELECTRONICS IND
发明人： OKIKAWA SUSUMU , SUZUKI HIROMICHI , MIKINO HIROSHI , KITAMURA WAHEI , SAKAMOTO DAIJI , MATSUBARA SATORU , YAMAMOTO TAIYOU
IPC分类号： H01L21/60 , H01L23/49
摘要： PURPOSE:To check corrosion of bonding wires, and to enhance reliability of a semiconductor device by a method wherein the bonding wire is formed of the main component of aluminum containing nickel of 0.03wt% or more. CONSTITUTION:A pellet 3 of silicon (Si), etc. is fitted according to gold-silicon eutectic, etc. to a tab 2 consisting of the 42 alloy or a copper alloy, for example, the bonding pads (the electrodes) of the pellet 3 thereof and the inner lead parts 4 (the outside conductive parts) of leads 1 consisting of the same material with the tab 2 are connected by wires 5, and a dual-in-line type plastic package construction sealed with resin 6 is formed. The wires 5 in the semiconductor device thereof is mainly consisting of aluminum, and nickel of 0.03wt% or more, desirably 0.075wt% or more is contained therein.

95. 发明专利

JPS6070750A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6070750A
公开(公告)日：1985-04-22
申请号：JP17794483
申请日：1983-09-28
申请人： HITACHI LTD
发明人： OKIKAWA SUSUMU , SUZUKI HIROMICHI , KITAMURA WAHEI , MIKINO HIROSHI
IPC分类号： H01L21/60 , H01L21/48
摘要： PURPOSE:To enable to obtain a favorable bonding property by a method wherein a ball part formed on a bonding wire made of aluminum or aluminum alloy is selected its hardness in a specific extent. CONSTITUTION:A ball part 6a formed on a bonding wire made of aluminum or aluminum alloy has been selected its hardness at a Vickers hardness of about 30-50. A bonding of the bonding wire 6 as aforementioned is performed by the following method, for example. The ball part 6a is formed at the point of the bonding wire 6 by discharge between the point of the wire 6 held on a wire bonder and the electrode 9 of the wire bonder. Immediately after this, the ball part 6a is sprayed with low-temperature nitrogen, etc., and is quenched, thereby enabling to obtain a favorable ball hardness.

96. 发明专利

JPS6013132B2 失效
公开(公告)号：JPS6013132B2
公开(公告)日：1985-04-05
申请号：JP13572177
申请日：1977-11-14
申请人： HITACHI LTD
发明人： OKIKAWA SUSUMU , MIKINO HIROSHI
IPC分类号： G01L1/00 , G01L5/00

97. 发明专利

JPS59208767A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS59208767A
公开(公告)日：1984-11-27
申请号：JP8263783
申请日：1983-05-13
申请人： Hitachi Ltd
发明人： OKIKAWA SUSUMU , KITAMURA WAHEI , SUZUKI HIROMICHI , MIKINO HIROSHI
IPC分类号： H01L21/60 , H01L23/485 , H01L23/49
CPC分类号： H01L24/05 , H01L2224/02166 , H01L2224/04042 , H01L2224/05554 , H01L2224/05556 , H01L2224/45 , H01L2224/45124 , H01L2224/48 , H01L2224/4807 , H01L2224/48091 , H01L2224/48247 , H01L2224/48453 , H01L2224/48465 , H01L2224/48472 , H01L2224/48699 , H01L2924/00014 , H01L2924/01013 , H01L2924/01082 , H01L2924/15153 , H01L2924/15165 , H01L2924/16152 , H01L2924/00 , H01L2224/48463 , H01L2224/05599 , H01L2924/00012
摘要： PURPOSE:To prevent the corrosion of a pad as well as to contrive reduction in cost of production by a method wherein, when the bonding pad provided on a semiconductor pellet and the outside lead side are connected using a fine wire, an Al wire is used as the fine wire, and the end part of said Al wire is formed in the shape which covers the whole or the larger part of the pad. CONSTITUTION:A recessed part is provided on the surface of the base 1 of the package consisting of ceramic, a semiconductor pellet 2 is adhered to the recessed part, and the bonding pad provided therein and the inner lead part of a lead pin 4 adhered to the region ranging from the surface of the base 1 to the outer circumference are connected using a fine wire 3. Subsequently, the pellet 2 and the pin 4 located in the vicinity of the pellet 2 are covered by a ceramic cap 5 through the intermediary of low melting point glass 6, and they are airtightly sealed. According to this constitution, Al is used for the fine wire 3, said fine wire 3 is provided on the substrate 2a of the pellet 2, the ball part 3a located at the tip of the fine wire 3 is made larger so that it can cover the whole surface and squeezed out of the pad 2b of the wiring part 2d which is surrounded by an SiO2 protective film 2c.
摘要翻译：目的：为了防止垫的腐蚀，以及通过以下方法降低生产成本的方法，其中当使用细线连接设置在半导体颗粒上的接合焊盘和外部引线侧时，使用Al线作为细线，并且所述Al线的端部形成为覆盖垫的整体或较大部分的形状。构成：在由陶瓷构成的封装的基座1的表面上设置有凹部，半导体芯片2粘附到凹部，并且设置在其中的焊盘，引线针4的内引线部分粘附到使用细线3将从基座1的表面到外周的区域连接。接着，位于颗粒2附近的颗粒2和销4被陶瓷盖5覆盖，通过中间的低熔点玻璃6，并且它们被气密密封。根据该结构，使用Al作为细线3，在芯片2的基板2a上设置细线3，使位于细线3的前端的球部3a变大，使其能够覆盖整个表面被从SiO 2保护膜2c包围的配线部2d的焊盘2b挤出。

98. 发明专利

JPS59976B2 JPS59976B2 - 失效
公开(公告)号：JPS59976B2
公开(公告)日：1984-01-10
申请号：JP13403475
申请日：1975-11-10
申请人： Hitachi Ltd
发明人： OKIKAWA SUSUMU
IPC分类号： H01L21/52 , H01L23/02 , H01L23/08 , H01L23/28 , H01L23/29 , H01L23/31
CPC分类号： H01L24/32 , H01L2224/32245 , H01L2224/48247 , H01L2224/73265 , H01L2224/8592 , H01L2924/181 , H01L2924/00 , H01L2924/00012
摘要： PURPOSE:To eliminate the breakdown of the silver paste film which connects a semiconductor pellet to a substrate.

99. 发明专利

JPS58200559A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS58200559A
公开(公告)日：1983-11-22
申请号：JP8314282
申请日：1982-05-19
申请人： Hitachi Ltd , Hitachi Micro Comput Eng Ltd
发明人： SUZUKI HIROMICHI , OOTSUKA KENICHI , KITAMURA WAHEI , SATOU HAJIME , MIKINO HIROSHI , OKIKAWA SUSUMU , KIMOTO RIYOUSUKE
IPC分类号： H01L23/50 , H01L23/28 , H01L23/495
CPC分类号： H01L23/49582 , H01L2224/32245 , H01L2224/48 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/73265 , H01L2224/83424 , H01L2924/01012 , H01L2924/01013 , H01L2924/01022 , H01L2924/01025 , H01L2924/01078 , H01L2924/01082 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PURPOSE:To improve adhesive property between a lead and a resin, and to enhance humidity-proof property and reliability while reducing cost by forming an aluminum layer to a contact interface with the resin of the lead. CONSTITUTION:The aluminum layers 4 are formed to the inner leads 3, a tab 2 and the surfaces of tab leads, and a semiconductor element pellet 5 is fixed to the tab 2. The aluminum layers 4 are formed through plating, evaporation or cladding or the like, and pure aluminum or an aluminum alloy is used. The so- called corrosion-risisting aluminum containing manganese of 0.1-5.0% or magnesium of the same % or titanium of the same % or the like may be used. Since the aluminum layers 4 interpose to the contact interface between the leads 1 and the resin 8, adhesive propety between the lead and the resin is improved by high adhesive property between aluninum and the resin, and the intrusion of moisture through the interface is prevented.
摘要翻译：目的：提高铅和树脂之间的粘合性，并且通过在与铅的树脂的接触界面形成铝层而降低成本的同时提高耐湿性和可靠性。构成：铝层4形成在内引线3，突片2和突片引线的表面上，半导体元件片5被固定到突片2上。铝层4通过电镀，蒸发或包层形成使用纯铝或铝合金。可以使用所谓的含有0.1-5.0％的含锰锰，或相同％或相同％的钛的镁等。由于铝层4插入到引线1和树脂8之间的接触界面上，所以通过铝和树脂之间的高粘附性，提高引线和树脂之间的粘合性，防止了通过界面侵入水分。

100. 发明专利

JPS5868944A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5868944A
公开(公告)日：1983-04-25
申请号：JP16721981
申请日：1981-10-21
申请人： HITACHI LTD
发明人： SUZUKI HIROMICHI , OKIKAWA SUSUMU , SATOU HAJIME
IPC分类号： H01L21/52 , H01L21/60 , H01L23/50
摘要： PURPOSE:To reduce the cost of a semiconductor device by a method wherein Al parts of a pellet equipping part and an inner lead part of a lead frame, and an Al part on the back of the pellet are soldered, and an electrode part and the inner lead part are connected with Al wires. CONSTITUTION:Al layers are formed by plating, etc., on a tab 2 and inner leads 3 of a lead frame 1. While an Al layer 8 is formed by plating, etc., on the back of a semiconductor pellet 5. By heating the tab 2 on a heater up to the fusion temperature using a nitrogen atmosphere and moreover using solder 7 wettable favorably with Al, solder is fused in several seconds, the pellet 5 is fusion welded by swing and scrubbing, the Al layer 8 on the back of pellet and the Al layer 6 on the tab 2 are unified in one body by solder 7, and the pellet 5 is fixed to the tab 2 when solder is cooled and soldified again. After then, the pellet 5 and the inner leads 3 are connected with Al wires 9.

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