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91. 发明专利

JPH0433360A SEMICONDUCTOR DEVICE COOLER 失效
公开(公告)号：JPH0433360A
公开(公告)日：1992-02-04
申请号：JP13818990
申请日：1990-05-30
申请人： HITACHI LTD
发明人： NAKAMURA KOJI , HONDA ATSUSHI , MIWA TAKASHI , NOSE FUJIAKI
IPC分类号： H01L23/467
摘要： PURPOSE:To improve a heat diffusion efficiency and obtain a high heat radiation effect by a method wherein a rotary fin which has a plurality of rotary blades and is made to rotate by the application of an external wind pressure is provided on the radiation plane of a semiconductor device. CONSTITUTION:A radiation fin 7 having protrusions with certain intervals is attached to the surface of a heat transmitting plate 3. A shaft 8 is fixed to the center part of the radiation fin 7 with screws. A rotary fin 7 is supported by the shaft 8 with bearings 9 therebetween. A plurality of rotary blades are attached to the rotary fin 10 symmetrically and radially along its vertical direction. If an air flow is produced by the rotation of a fan 11, the rotary fin 10 is made to rotate by a wind pressure caused by the air flow. By the rotation of the rotary fin 10, the heat coming out of the radiation fins 10 is made to ascend and the heat is diffused. With this constitution, heat is radiated by the fan 11 not only along a horizontal direction but also along a vertical direction to improve a heat radiation efficiency. Therefore, the temperature rise of the air supplied to a semiconductor device provided behind the radiation fin can be reduced, so that the cooling efficiency can be improved.

92. 发明专利

JPS6038112A DICING DEVICE 失效
公开(公告)号：JPS6038112A
公开(公告)日：1985-02-27
申请号：JP14633383
申请日：1983-08-12
申请人： HITACHI LTD
发明人： NAKAMURA KOUJI , OOTSUKA KANJI , MIWA TAKASHI , HONDA ATSUSHI
IPC分类号： H01L21/683 , B28D5/02 , H01L21/301 , H01L21/67 , H01L21/68 , H01L21/78

93. 发明专利

JPS57138145A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS57138145A
公开(公告)日：1982-08-26
申请号：JP2311481
申请日：1981-02-20
申请人： HITACHI LTD , NITSUKAN DENSHI KK , HITACHI MICROCUMPUTER ENG
发明人： USAMI TAMOTSU , OOTSUKA KANJI , ARAKI TAKASHI , TSUKITA MUTSUO , TSUBOI TOSHIHIRO , SUGIMOTO SHIYUUICHI , MIWA TAKASHI
IPC分类号： H01L21/52 , H01L21/58
摘要： PURPOSE:To improve the adhesive strength of a pellet, and to reduce cost by using polyimide resin, into which the metallic powder of Al, etc. is mixed, as paste fast sticking the pellet onto a base. CONSTITUTION:A pellet sticking section 3 is metallized and formed to the inner bottom of the base 1 of a package consisting of a substance such as ceramics, and the Si pellet 2 to which an element is shaped is fast stuck by using the paste 5. A connecting process with a lead by wires 7 and an airtight sealing process through the glass welding of a cap are conducted after the pellet is fast stuck. A material obtained by mixing the Al powder to the polyimide resin, heatproof temperature thereof is higher than glass sealing temperature, is used as the paste 1, and an Al layer is preferably formed previously onto the back of the pellet 2. Accordingly, the device resists the high temperature of a post process and the adhesive strength can be kept while cost can be reduced because the precious metals are not employed.

94. 发明专利

JPS57121260A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS57121260A
公开(公告)日：1982-07-28
申请号：JP638081
申请日：1981-01-21
申请人： Hitachi Ltd
发明人： OOTSUKA KANJI , MIWA TAKASHI , EMOTO YOSHIAKI
IPC分类号： H01L23/34 , H01L23/12 , H01L23/36 , H01L23/40
CPC分类号： H01L23/36 , H01L2224/48 , H01L2224/48091 , H01L2924/15312 , H01L2924/16152 , H01L2924/00014 , H01L2924/00
摘要： PURPOSE:To improve the heat radiation of a heat sink layer in a semiconductor device by providing the layer having good thermal conductivity in a substrate. CONSTITUTION:A pellet 12 is mounted on a substrate 10 made of a ceramic material, the electrode of the pellet 12 is connected via a wire 14 to the conductor part on the substrate 10, and a cap 16 is placed on the pellet 12 and is hermetically seated. On the other hand, the substrate 10 is formed in a shape that a copper layer 20 is sandwiched in the intermediate. In this manner, the heat produced from the pellet 12 is radiated from the direction of the cap 16, is further radiated directly externally through the layer 10 from the upper half of the substrate 10, and is radiated externally via the lower half of the substrate 10 from the layer 20, thereby improving the heat radiation of the heat sink layer.
摘要翻译：目的：通过在衬底中提供具有良好导热性的层来改善半导体器件中的散热层的散热。构成：将颗粒12安装在由陶瓷材料制成的基板10上，颗粒12的电极经由导线14连接到基板10上的导体部分，盖16被放置在颗粒12上，并且是气密地坐着另一方面，基板10形成为中间层夹着铜层20的形状。以这种方式，从颗粒12产生的热量从盖16的方向辐射，从衬底10的上半部分直接通过层10从外部辐射，并且经由衬底10的下半部分向外辐射 10，从而改善散热层的热辐射。

95. 发明专利

JP2001077133A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JP2001077133A
公开(公告)日：2001-03-23
申请号：JP25146399
申请日：1999-09-06
申请人： HITACHI LTD
发明人： MIWA TAKASHI
IPC分类号： H01L21/56 , H01L23/29 , H01L23/31
摘要： PROBLEM TO BE SOLVED: To prevent decrease of working efficiency, generation of voids and exposure of wire groups. SOLUTION: In a resin sealing body 21, a chip 15 bonded to a heat sink 12, an electric wiring 5 laid on a wiring board 3, and a bonding wire 16 electrically connecting the chip 15 and the electric wiring 5 are sealed with resin. The resin sealed body 21 is constituted of an inside sealing part 18, molded by potting of low viscosity resin and an outside sealing part 20 molded by potting of high viscosity resin. Since the inside sealing part is molded by using the low viscosity resin, the resin can be effectively potted without generation of voids. Since the outside sealing part is molded by using the high viscosity resin and can be swollen, wire groups can be prevented from being exposed on the surface of the resin-sealing body.

96. 发明专利

JP2000077555A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2000077555A
公开(公告)日：2000-03-14
申请号：JP26088398
申请日：1998-08-31
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SHIRAISHI TOMOHIRO , MATSUNAGA TOSHIHIRO , SUWA MOTOHIRO , KUBOSONO MINORU , NOSE FUJIAKI , TSUTSUMI YASUKI , SHIRAI MASAYUKI , MIWA TAKASHI
IPC分类号： H01L23/12
CPC分类号： H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/49171 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To ensure proper through-hole conductors and further reduce the pitch of the conductors.
SOLUTION: A BGA 2 of a BGA.IC 1 is provided with a base 3 as a core 4. A ground conductor 5 is formed on the first major surface of the core 4, and an insulating film 9 is formed on the entire ground conductor 5, a plurality of signal lines 10 being formed on the insulating film 9 into a radial pattern. A bonding pad 11 is formed on the inside ends of the signal lines 10, and a pad 12 for bump is connected electrically with the outside ends of the signal lines 10 through the through-hole conductors 15 formed into narrow through- holes 14. Since the pitch of the signal lines can be reduced by forming the through-holes into narrow shape, the wiring density of the signal lines can be improved. In addition, the diameter of the through-holes is small but their length is large and sufficient areas can be ensured on the inner surface of the through-holes. Therefore, the through-hole conductors can be formed properly, and degradation in the electrical characteristics of the through-hole conductors can be prevented.
COPYRIGHT: (C)2000,JPO
摘要翻译：要解决的问题：确保适当的通孔导体，进一步降低导体间距。解决方案：BGA.IC1的BGA2具有基体3作为芯4.在芯体4的第一主表面上形成接地导体5，并且在整个接地导体上形成绝缘膜9 如图5所示，多个信号线10在绝缘膜9上形成为径向图案。在信号线10的内侧形成有接合焊盘11，通过形成为窄通孔14的通孔导体15，将信号线10的外侧端部与凸起的焊盘12电连接。由于可以通过将通孔形成为窄的形状来减小信号线的间距，可以提高信号线的配线密度。此外，通孔的直径小，但是它们的长度大，并且在通孔的内表面上可以确保足够的面积。因此，可以适当地形成通孔导体，并且可以防止通孔导体的电特性的劣化。

97. 发明专利

JPH11317473A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH11317473A
公开(公告)日：1999-11-16
申请号：JP7513499
申请日：1999-03-19
申请人： HITACHI LTD
发明人： SHIRAI MASAYUKI , OTSUKA KANJI , MIWA TAKASHI , NAKANO TETSUO , KOIDE KAZUO , YAMAGIWA AKIRA , OBA TAKAO , HATADA TOSHIO , MATSUSHIMA HITOSHI , MIYAZAKI KUNIO
IPC分类号： H01L23/12 , H01L23/34
摘要： PROBLEM TO BE SOLVED: To prevent mismatchings caused by the difference in the expansion coefficient of a materials for constituting a package by forming an area between a semiconductor chip and a cooling part and the entire surface of the semiconductor chip in a structure which is covered with a specific soft material. SOLUTION: Since a chip 1 and a wiring layer are connected by a soft material, such as elastomers 3, 5 and 8 for connecting members, a bonding wire 7 in a loop is used for absorbing the displacement of each rigid body. Also, since epoxy potting with strong stiffness cannot be used due to the similar reasons for sealing, recently potting is made by using silicon gel that has been highly regarded as a reliable sealing material as a coating gel 11. Also, for soft material, namely the elastomers 3, 5, and 8 and the coating gel 11, a materials with an coefficient of elasticity of 0.001-100 kg/mm , preferably 0.01-10 kg/mm , is used.

98. 发明专利

JPH11186440A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH11186440A
公开(公告)日：1999-07-09
申请号：JP35299597
申请日：1997-12-22
申请人： HITACHI LTD
发明人： SUWA MOTOHIRO , MIWA TAKASHI , NOSE FUJIAKI
IPC分类号： H01L23/12 , H01L21/52 , H01L21/60
摘要： PROBLEM TO BE SOLVED: To prevent failure of disconnection of a BGA(ball grid array) in which a semiconductor chip is loaded on a package substrate made of plastic. SOLUTION: A stress generated due to a thermal expansion coefficient difference between a package substrate 1 constituted of plastic and a semiconductor chip 2 is eased and absorbed by two layer solder resists 10 and 11, so that the disconnection of wiring 5 formed on the surface of the package substrate 1 can be prevented. Thus, a BGA whose reliability and temperature cycle life is improved can be realized.

99. 发明专利

JPH10284635A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH10284635A
公开(公告)日：1998-10-23
申请号：JP8854997
申请日：1997-04-07
申请人： HITACHI LTD
发明人： YAMAGUCHI EIJI , MIWA TAKASHI , TAZAKI KOJI
IPC分类号： H01L23/12 , H01L23/14
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device on which the exfoliation between filling resin and a semiconductor chip can be prevented, and reliability can be improved. SOLUTION: A PIQ protective film (polyimicle resin protective film) 2 is formed on the main surface of a semiconductor chip such as an LSI (large scale integrated circuit) chip, the semiconductor chip 1 is mounted on a P-BGA (plastic ball-grid array) substrate 4 with its main surface facing down through a solder bump 3, and a filling resin 5 is embedded between the PIQ protective film 2 on the main surface of the semiconductor chip 1 and the P-BGA substrate 4.

100. 发明专利

JPH1022413A WIRING BOARD, MANUFACTURE OF SEMICONDUCTOR DEVICE USING IT AND MOUNTING METHOD THEREOF 失效
公开(公告)号：JPH1022413A
公开(公告)日：1998-01-23
申请号：JP17796496
申请日：1996-07-08
申请人： HITACHI LTD
发明人： YAMAGUCHI EIJI , MIWA TAKASHI
IPC分类号： H01L21/60 , H01L23/12
摘要： PROBLEM TO BE SOLVED: To prevent the top of an opening from being covered with a solder electrode and improve the life of connection between the semiconductor electrode and an electrode pad by extracting a part of the opening circumference to the outer side of the outer periphery of the electrode pad. SOLUTION: A wiring board 1 has an electrode pad 2A whose surface is exposed from two openings 4A formed on a protection film 3A on a mounting face, and a spherical solder electrode 6 is connected to the surface of the electrode pad 2A. A part of the circumference of the opening 4A is extracted to the outer side of the outer periphery of the electrode pad 2A. Thus, when a solder electrode 6 is arranged on the surface of the electrode pad 2A, the circumference of the opening 4A extracted to the outer side of the outer periphery of the electrode pad 2A does not contact the solder electrode 6, and the top of the opening 4A is not covered with the solder electrode 6. Therefore, at the time of connecting the solder electrode 6 to the surface of the electrode pad 2A with activator, since the vaporized activator is discharged outside not to be left in the opening 4A, no void is generated in the solder electrode 6.

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