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91. 发明专利

JPH06267028A MAGNETORESISTANCE EFFECT TYPE HEAD AND MAGNETIC DISC DEVICE 失效
公开(公告)号：JPH06267028A
公开(公告)日：1994-09-22
申请号：JP5161393
申请日：1993-03-12
申请人： HITACHI LTD
发明人： WATANABE KATSURO , FUKUI HIROSHI , KAWABE TAKASHI , FUYAMA MORIAKI , IMAGAWA TAKAO
IPC分类号： G11B5/39
摘要： PURPOSE:To obtain a MR head with a large reproduction output even when a magnetic domain control film with a higher resistance is used by a method wherein the magnetic domain control film and an electrode are arranged on a magnetoresistance effect film and a surface is provided to have the magnetoresistance effect film and an electrode film continuing electrically. CONSTITUTION:It is so arranged to have a magnetoresistance effect film 10, a magnetic domain control film 11 having a surface continuing therefrom magnetically, a pair of electrode films 12 to supply a current to the effect film 10 and a means to apply a bias magnetic field to the effect film 11. The control film 11 and the electrode film 12 are arranged on the effect film 10 and has a surface to have the effect film 10 and the control film 11 continuing magnetically and a surface to have a solidified film 10 and the electrode film 12 continuing electrically at a part on both sides sandwiching a reading track. The control film 11 is made of NiO. This enables the suppressing of Barkhausen noise to obtain a large reproduction output even when the magnetic domain control film 11 with a higher resistance is used. Thus, an MR head adaptable to a narrow track can be obtained.

92. 发明专利

JPH0693439A SPUTTERING DEVICE AND PRODUCTION OF MAGNETIC FILM 失效
公开(公告)号：JPH0693439A
公开(公告)日：1994-04-05
申请号：JP24671792
申请日：1992-09-16
申请人： HITACHI LTD
发明人： KOMURO MATAHIRO , MITSUOKA KATSUYA , FUYAMA MORIAKI , WATANABE KATSURO , SETOYAMA HIDETSUGU , SANO MASAAKI , HOSHIYA HIROYUKI , TAKAHASHI HIROMASA
IPC分类号： C23C14/18 , C23C14/34 , G11B5/39 , H01F41/18 , H01L43/12
摘要： PURPOSE:To maintain the specified growth bearings of films and to enhance the crystal orientability of the films so as to form the thin film having low resistivity by providing a planar collimator having through-holes between a target and a substrate and allowing the rectilinearly advancing sputtered particles to arrive preferentially at the substrate surface. CONSTITUTION:This sputtering device is formed of a vacuum vessel 1, the collimator 3 for separating this vessel to a film forming chamber 10 and a sputtering chamber 11, target holders 12a to 12e and a substrate holder 3. The collimator 3 holds the film forming chamber 10 and the sputtering chamber 11 respectively at different vacuum degrees. The directions of the sputtered particles flying from the targets 4a to 4e are limited and are introduced from the plural through-holes 14a to 14e into the film forming chamber 10 where the oriented and sputtered particle are deposited on the substrate 2.

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