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1. 发明专利

JP2004349238A Deposition material used for manufacture of lithium secondary battery negative electrode, manufacturing method of lithium secondary battery negative electrode, and lithium secondary battery negative electrode 有权
公开(公告)号：JP2004349238A
公开(公告)日：2004-12-09
申请号：JP2003297443
申请日：2003-08-21
申请人： Sumitomo Titanium Corp , 住友チタニウム株式会社
发明人： NATSUME YOSHITAKE , OGASAWARA TADASHI , AZUMA KAZUOMI
IPC分类号： C23C14/24 , C23C14/34 , H01M4/13 , H01M4/139 , H01M4/48 , H01M10/05 , H01M4/02 , H01M4/04
CPC分类号： Y02E60/122
摘要： PROBLEM TO BE SOLVED: To provide a deposition material used for manufacture of a lithium secondary battery negative electrode which can improve initial efficiency without the degradation of an initial charge capacity and at the same time can improve cycle characteristics, and a manufacturing method of the lithium secondary battery negative electrode.
SOLUTION: An SiO film as a negative electrode active material layer is formed by vacuum vapor deposition on a surface of a current collector used for a negative electrode of lithium secondary battery. SiO deposits having a weight reduction rate in which a rattler test (rattler value) are 1.0% or less are used as a vapor deposition source.
COPYRIGHT: (C)2005,JPO&NCIPI

2. 发明专利

JP2007053085A Negative electrode for lithium secondary battery and method of manufacturing same 有权
标题翻译：用于锂二次电池的负极及其制造方法
公开(公告)号：JP2007053085A
公开(公告)日：2007-03-01
申请号：JP2006198057
申请日：2006-07-20
申请人： Sumitomo Titanium Corp , 住友チタニウム株式会社
发明人： NATSUME YOSHITAKE
IPC分类号： H01M4/02 , H01M4/04 , H01M4/13 , H01M4/139 , H01M4/48 , H01M4/64
CPC分类号： Y02P70/54
摘要： PROBLEM TO BE SOLVED: To provide a negative electrode for a lithium secondary battery having high negative electrode capacity, high initial efficiency, high cycle characteristics, and high speed charge discharge characteristics. SOLUTION: An SiO thin film acting as a negative active material layer is formed on the surface of a current collector by vacuum deposition, preferable by an ion plating method. The surface roughness (Rz) of the current collector is made 5.0 or more in maximum height of irregularities. After the thin film is formed, it is heat treated in nonoxidative atmosphere at 650-850°C. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供具有高负极容量，高初始效率，高循环特性和高速充电放电特性的锂二次电池用负极。解决方案：通过真空沉积在集电体的表面上形成用作负极活性物质层的SiO薄膜，优选通过离子镀法。集电体的表面粗糙度（Rz）在最大不规则高度上为5.0以上。薄膜形成后，在650-850℃的非氧化性气氛中进行热处理。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2006348348A SILICON MONOXIDE-BASED VAPOR DEPOSITION MATERIAL, AND ITS MANUFACTURING METHOD 审中-公开
公开(公告)号：JP2006348348A
公开(公告)日：2006-12-28
申请号：JP2005176244
申请日：2005-06-16
申请人： SUMITOMO TITANIUM CORP
发明人： NATSUME YOSHITAKE
IPC分类号： C23C14/24 , C23C14/32 , G02F1/1333
摘要： PROBLEM TO BE SOLVED: To enable a powder-sintering type silicon monoxide-based vapor deposition material, which is used for depositing a vapor-deposited film of silicon monoxide, to suppress occurrence of splash and to ensure the material strength durable to use. SOLUTION: Raw powder consisting of deposited SiO is sintered at the temperature of 700-1,000°C. Deposition of Si in a sintering process is suppressed. In the measurement by XRD (X-Ray Diffraction spectroscopy), the relationship between the peak intensity P1 at the Si peak point occurring in a vicinity of 2θ=28°C and the base intensity P2 at the peak point imagined from the average intensity gradient before and behind the peak point is given by the inequality P1/P2≤3. The compressive disruptive strength is increased to ≥5MPa by selectively using deposited SiO manufactured by a vacuum coagulator. COPYRIGHT: (C)2007,JPO&INPIT

4. 发明专利

JP2003246670A SINTERED COMPACT OF SILICON MONOXIDE AND PRODUCTION METHOD THEREOF 审中-公开
公开(公告)号：JP2003246670A
公开(公告)日：2003-09-02
申请号：JP2002046711
申请日：2002-02-22
申请人： SUMITOMO TITANIUM CORP
发明人： NATSUME YOSHITAKE , OGASAWARA TADASHI , WATANABE MUNETOSHI , AZUMA KAZUOMI , IWASE TOSHIHARU
IPC分类号： C04B35/14 , C04B35/645 , C23C14/24 , C23C14/34
摘要： PROBLEM TO BE SOLVED: To provide a sintered compact of silicon monoxide with has a high evaporation rate, and to provide a production method thereof. SOLUTION: The sintered compact of silicon monoxide is used as the material for depositing a silicon oxide-based thin film. When a sample of the sintered compact is subjected to thermogravimetric measurement at a heating temperature of 1,300°C under the pressure of ≤10 Pa in a vacuum atmosphere, the residue on evaporation is ≤4% of the mass of the sample before the measurement. The sintered compact can be produced, after press forming SiO particles having a particle diameter of ≥250 μm, or while pressurizing the SiO particles, by performing sintering in a nonoxidizing atmosphere. COPYRIGHT: (C)2003,JPO

5. 发明专利

JP2004349237A Cathode for lithium secondary battery, lithium secondary battery using cathode, deposition material used for cathode formation, and manufacturing method of cathode 有权
公开(公告)号：JP2004349237A
公开(公告)日：2004-12-09
申请号：JP2003295363
申请日：2003-08-19
申请人： Sumitomo Titanium Corp , 住友チタニウム株式会社
发明人： NATSUME YOSHITAKE
IPC分类号： C23C14/10 , C23C14/24 , C23C14/34 , H01M4/13 , H01M4/139 , H01M4/48 , H01M10/05 , H01M4/04 , H01M4/02 , H01M10/40
CPC分类号： Y02E60/122
摘要： PROBLEM TO BE SOLVED: To greatly improve the low level of an initial efficiency as its shortcoming without impairing the large level of an initial charge capacity which is a characteristic of a lithium secondary battery using SiO as a negative electrode.
SOLUTION: A film of a silicon oxide formed by vacuum vapor deposition or sputtering is formed on a surface of a current collector as a negative electrode active material layer. Preferably, the film is formed by an ion plating method. The silicon oxide is SiOx (0.5 ≤ x

6. 发明专利

JP2004323324A Silicon monoxide sintered compact and sputtering target 有权
公开(公告)号：JP2004323324A
公开(公告)日：2004-11-18
申请号：JP2003123210
申请日：2003-04-28
申请人： Sumitomo Titanium Corp , 住友チタニウム株式会社
发明人： NATSUME YOSHITAKE
IPC分类号： C04B35/14 , C23C14/34
摘要： PROBLEM TO BE SOLVED: To provide a silicon monoxide sintered compact which combines securement of a film deposition rate and stability of film properties by an RF (radio-frequency reactive sputtering) method.
SOLUTION: (1) The silicon monoxide sintered compact is obtained by molding raw material powder comprising, by mass, 3 to 30% silicon powder doped with boron, phosphorous or antimony, and the balance silicon monoxide or a silicon oxide based mixture. In this case, the content of silicon monoxide in the mixture is desirably controlled to ≥20%. Further, the bulk density of the silicon monoxide sintered compact after sintering is desirably controlled to ≥95%. (2) The silicon monoxide sintered compact has a specific resistance of 1 to 500 Ω cm. Further, the sputtering target is made of the silicon monoxide sintered compact in the (1) or (2).
COPYRIGHT: (C)2005,JPO&NCIPI

7. 发明专利

JP2007056362A Sputtering target, method for producing same, sputtering thin film formed by using the sputtering target, and organic el device using the thin film 有权
标题翻译：溅射靶，其制造方法，使用溅射靶形成的薄膜，以及使用薄膜的有机EL器件
公开(公告)号：JP2007056362A
公开(公告)日：2007-03-08
申请号：JP2006103195
申请日：2006-04-04
申请人： International Manufacturing & Engineering Services Co Ltd , Junji Kido , Sumitomo Titanium Corp , 住友チタニウム株式会社 , 淳二城戸 , 株式会社アイメス
发明人： NATSUME YOSHITAKE , OGASAWARA TADASHI , AZUMA KAZUOMI , KIDO JUNJI , MORI KOICHI
IPC分类号： C23C14/34 , H01L51/50 , H05B33/02 , H05B33/04
CPC分类号： C23C14/3414 , C23C14/08 , H01B1/08 , H01L51/5253 , H05B33/26
摘要： PROBLEM TO BE SOLVED: To provide a sputtering target capable of providing high moisture barrier properties and high flexibility to a sputtering film, ensuring the high film deposition rate in the sputtering, and reducing damages on an object for film deposition as much as possible. SOLUTION: A powder mixture containing, in a weight ratio, 20-80% of SiO powder and the balance of TiO 2 powder and/or Ti powder is subjected to pressure sintering. The sintered body has a composition expressed as SiαTiβOγ (wherein α, β and γ represent respective molar ratios of Si, Ti and O), and α/β satisfies 0. 45-7.25 while γ/(α+β) satisfies 0.80-1.70. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供能够对溅射膜提供高水分阻隔性和高柔性的溅射靶，确保溅射中的高成膜速度，并且减少对膜沉积物体的损害，就像可能。解决方案：将重量比为20-80％的SiO粉末和余量的TiO 2 SBB粉末和/或Ti粉末的粉末混合物进行加压烧结。烧结体具有以SiαTiβOγ表示的组成（其中α，β和γ表示Si，Ti和O的摩尔比），α/β满足0.45〜7.25，而γ/（α+β）满足0.80-1.70 。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2007053084A Method of manufacturing negative electrode for lithium secondary battery 有权
标题翻译：锂二次电池负极制造方法
公开(公告)号：JP2007053084A
公开(公告)日：2007-03-01
申请号：JP2006198051
申请日：2006-07-20
申请人： Sumitomo Titanium Corp , 住友チタニウム株式会社
发明人： NATSUME YOSHITAKE
IPC分类号： H01M4/04 , H01M4/02 , H01M4/13 , H01M4/139 , H01M4/48
CPC分类号： Y02P70/54
摘要： PROBLEM TO BE SOLVED: To remarkably improve low initial efficiency which is a defect without obstructing initial charge capacity characterizing a lithium secondary battery using an SiO negative electrode and hinder drop in cycle characteristics caused by increasing the thickness of the SiO layer.
SOLUTION: A thin film of SiO of a negative active material is formed on the surface of a current collector by vacuum deposition, preferably by an ion plating method. An Si-SiO mixture powder sintering target containing Si powder of 5-30 wt.% is used as a film forming target. The thickness of the SiO thin film is made 5 μm or more. The surface roughness (Rz) of the current collector is made 5.0 or more in maximum height of irregularities. After the thin film is formed, it is heat-treated in the nonoxidative atmosphere at 650-850°C.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了显着提高作为缺陷的低初始效率，而不会阻碍表征使用SiO负极的锂二次电池的初始充电容量，并且阻止由于增加SiO层的厚度而引起的循环特性的下降。解决方案：通过真空沉积，优选通过离子镀法在集电体的表面上形成负极活性材料的SiO薄膜。使用含有5-30重量％的Si粉末的Si-SiO混合粉末烧结靶作为成膜靶。 SiO薄膜的厚度为5μm以上。集电体的表面粗糙度（Rz）在最大不规则高度上为5.0以上。薄膜形成后，在650-850℃的非氧化气氛中进行热处理。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2005071782A Manufacturing method of negative electrode for lithium secondary battery 有权
标题翻译：锂二次电池负极电极的制造方法
公开(公告)号：JP2005071782A
公开(公告)日：2005-03-17
申请号：JP2003299701
申请日：2003-08-25
申请人： Sumitomo Titanium Corp , 住友チタニウム株式会社
发明人： NATSUME YOSHITAKE , OGASAWARA TADASHI , AZUMA KAZUOMI
IPC分类号： C23C14/10 , H01M4/139 , H01M4/48 , H01M4/66 , H01M10/05 , H01M4/04 , H01M4/02
CPC分类号： Y02E60/122
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a negative electrode for a lithium secondary battery capable of improving initial efficiency without causing the degradation of initial charge capacity of the lithium secondary battery, and improving a cycle characteristic. SOLUTION: A SiO film is formed, as a negative electrode active material layer, on the surface of a collector used for the negative electrode for a lithium secondary battery by vacuum deposition. Then, the surface of the collector is cleaned in a vacuum or an inert atmosphere, and thereafter the SiO film is formed without being exposed to the atmosphere. COPYRIGHT: (C)2005,JPO&NCIPI

10. 发明专利

JP2004176135A Material for sputtering target, and sintered compact thereof 审中-公开
公开(公告)号：JP2004176135A
公开(公告)日：2004-06-24
申请号：JP2002344262
申请日：2002-11-27
申请人： Sumitomo Titanium Corp , 住友チタニウム株式会社
发明人： NATSUME YOSHITAKE
IPC分类号： C04B35/14 , C04B35/645 , C23C14/34
CPC分类号： C04B35/14 , C04B35/645 , C04B2235/428 , C04B2235/77 , C04B2235/79 , C04B2235/80 , C23C14/3414
摘要： PROBLEM TO BE SOLVED: To provide a material for a sputtering target with which a thin film of silicon oxide having excellent barrier property to gas and moisture can be deposited on the surface of a substrate material, and to provide a sintered compact thereof.
SOLUTION: The material for a sputtering target consists of 30 to 100% silicon monoxide and 0 to 70% silicon dioxide (wherein, ≤5% silicon may be included), and is used for reactive sputtering. Alternatively, the material for a sputtering target consists of 30 to 90% silicon monoxide and 10 to 70% silicon dioxide (wherein, ≤5% silicon may be included), and is used for nonreactive sputtering. The silicon oxide sintered compact is obtained by subjecting the material to pressure sintering at ≥1,250°C, and has a sintered density of ≥95% to a theoretical density.
COPYRIGHT: (C)2004,JPO

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