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1. 发明专利

JP2013127091A Granular vapor deposition material, method for depositing vapor deposition film, and vapor deposition film deposited using the vapor deposition material 审中-公开
标题翻译：颗粒蒸发沉积材料，沉积蒸镀沉积膜的方法和使用蒸气沉积材料沉积的蒸气沉积膜
公开(公告)号：JP2013127091A
公开(公告)日：2013-06-27
申请号：JP2011276612
申请日：2011-12-19
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： YOSHIDA YUUKI , SAKURAI HIDEAKI
IPC分类号： C23C14/24 , B65D23/08 , H01L51/50 , H05B33/04 , H05B33/10
摘要： PROBLEM TO BE SOLVED: To provide a granular vapor deposition material that is used for depositing an oxide thin film by a vacuum deposition method at high deposition rate with reduced splash, and to provide a method for depositing a vapor deposition film, and a vapor deposition film deposited using the vapor deposition material.SOLUTION: The granular vapor deposition material is formed of a granule with the average grain size of 1-10 mm, the granule formed so that a WOraw material powder (0≤x≤1) with a purity of 98% or more and less than 100% is subjected to granulation treatment. The method for depositing a vapor deposition film uses the granular vapor deposition material to deposit a film by means of a resistance heating method, electron beam deposition method or reactive plasma chemical vapor deposition method.
摘要翻译：解决的问题：提供一种用于通过真空沉积法以高沉积速率沉积氧化物薄膜的颗粒状气相沉积材料，并且提供沉积薄膜的方法，以及使用蒸镀材料沉积的蒸镀膜。解决方案：颗粒状气相沉积材料由平均粒径为1-10mm的颗粒形成，颗粒形成为使得WO

2. 发明专利

JP2013129893A Vapor deposition material for depositing water vapor barrier film, method for depositing water vapor barrier film, and water vapor barrier film deposited by the method 审中-公开
标题翻译：用于沉积水蒸汽障碍膜的蒸气沉积材料，用于沉积水蒸气障碍膜的方法和通过该方法沉积的水蒸气膜膜
公开(公告)号：JP2013129893A
公开(公告)日：2013-07-04
申请号：JP2011281563
申请日：2011-12-22
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： YOSHIDA YUUKI , SAKURAI HIDEAKI
IPC分类号： C23C14/24 , C04B35/00 , C04B35/14 , C04B35/453
摘要： PROBLEM TO BE SOLVED: To provide a vapor deposition material for depositing a water-vapor barrier film possessing both colorless transparent property and high water vapor barrier property, to provide a method for depositing the barrier film, and to provide a water vapor barrier film deposited by the method.SOLUTION: The vapor deposition material is a material for depositing a water vapor barrier film comprising a first oxide with a purity of 98% or more and below 100% and a second oxide with a purity of 98% or more and below 100%, wherein the first oxide is WO, the second oxide is at least either ZnO or SiO, and when the mol amounts of the first and second oxides contained are X mol and Y mol, respectively, the compositional ratio satisfies the relation: 0.05≤X mol/(X mol + Y mol) ≤0.95.
摘要翻译：要解决的问题：提供一种沉积具有无色透明性和高水蒸汽阻隔性的水蒸气阻隔膜的蒸镀材料，提供一种沉积阻挡膜的方法，并提供沉积蒸镀材料是用于沉积含有纯度为98％以上且低于100％的第一氧化物和纯度为98％以上且更低的第二氧化物的水蒸气阻隔膜的材料 100％，其中第一氧化物为WO，第二氧化物为至少ZnO或SiO，并且当所含的第一和第二氧化物的摩尔量分别为X mol和Y mol时，组成比满足关系：0.05 ≤Xmol /（X mol + Y mol）≤0.95。

3. 发明专利

JP2015030870A Ｃｕ−Ｇａ合金スパッタリングターゲット及びその製造方法有权
标题翻译： Cu-Ga合金溅射靶及其生产方法
公开(公告)号：JP2015030870A
公开(公告)日：2015-02-16
申请号：JP2013160134
申请日：2013-08-01
申请人：三菱マテリアル株式会社 , Mitsubishi Materials Corp
发明人： YOSHIDA YUUKI , ISHIYAMA KOICHI , MORI AKIRA
IPC分类号： C23C14/34 , C22C1/04 , C22C1/05 , C22C9/00
CPC分类号： C23C14/3414 , B22F3/16 , B22F5/00 , B22F2201/01 , B22F2301/10 , B22F2302/45 , B22F2303/01 , B22F2303/15 , B22F2304/10 , C22C1/0425 , C22C9/00 , C22C32/00 , C23C14/14 , H01J37/3429
摘要：【課題】酸素含有量をさらに低減可能であると共に異常放電を抑制可能なCu−Ga焼成体のスパッタリングターゲット及びその製造方法を提供すること。【解決手段】本発明のスパッタリングターゲットは、Cu−Ga合金のγ相及びζ相を有する素地中に、Na化合物相が分散した組織を有し、20原子%以上30原子%未満のGaを含有し、Na:0.05〜10原子%を含有し、NaがNaF、Na2S、Na2Se、Na3AlF6のうち少なくとも1種の状態で含有され、残部がCu及び不可避不純物(Na化合物におけるNa以外の元素を含む)からなる成分組成を有し、X線回折によりCuGaのγ相に帰属する回折ピークとζ相に帰属する回折ピークとが観察される焼成体からなり、前記γ相の平均粒径が100μm以下であり、前記Na化合物相の平均粒径が、8.5μm以下である。【選択図】図1
摘要翻译：要解决的问题：提供一种能够进一步降低氧含量并能够抑制异常放电的Cu-Ga烧结体的溅射靶及其制造方法。本发明的溅射靶是包括具有：其中Na化合物相分散在具有Cu-Ga合金的γ相和ζ相的基体中的结构的烧制体; 含有20原子％以上且小于30原子％的Ga，0.05〜10原子％的Na，余量的Cu与不可避免的杂质（含有Na化合物中的Na以外的元素）组成的组成成分，含有Na化合物以NaF，NaS，NaSe或NaAlF中的至少一种的形式存在。在烧成体中，利用X射线衍射观察归因于CuGa的γ相的衍射峰和归属于ζ相的衍射峰。 γ相的平均粒径为100μm以下，Na化合物相的平均粒径为8.5μm以下。

4. 发明专利

JP2012158820A Method for producing thin film and vapor deposition material for co-vapor deposition for forming thin film, thin film obtained by the method, thin film sheet having the thin film, and laminated sheet 审中-公开
标题翻译：用于生产薄膜的蒸汽沉积材料和用于形成薄膜的蒸发沉积材料的方法，通过该方法获得的薄膜，具有薄膜的薄膜和层压板
公开(公告)号：JP2012158820A
公开(公告)日：2012-08-23
申请号：JP2011020713
申请日：2011-02-02
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： ARIIZUMI KUMIKO , YOSHIDA YUUKI , SAKURAI HIDEAKI
IPC分类号： C23C14/08 , B32B9/00
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a thin film superior in transparency and gas barrier property, to provide a vapor deposition material for co-vapor deposition, which is suitable for forming the thin film, to provide a thin film obtained by the method, and to provide a thin film sheet having the thin film and a laminated sheet.SOLUTION: The method for producing a thin film is characterized by using a sublimable vapor deposition material composed of a first oxide and a meltable vapor deposition material composed of a second oxide, and then forming an oxide thin film constituted of the first oxide and the second oxide on a substrate by a co-vapor deposition method comprising simultaneously vapor depositing the oxides by a vacuum film deposition process.
摘要翻译：要解决的问题：为了提供一种透明性和气体阻隔性优异的薄膜的制造方法，提供适合于形成薄膜的共蒸气沉积用气相沉积材料，以提供薄的通过该方法获得的膜，并提供具有薄膜的薄膜片和层压片。解决方案：制造薄膜的方法的特征在于使用由第一氧化物和由第二氧化物组成的可熔融气相沉积材料组成的升华性气相沉积材料，然后形成由第一氧化物构成的氧化物薄膜并且通过共蒸镀方法在基板上形成第二氧化物，其包括通过真空膜沉积工艺同时气相沉积氧化物。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2012154865A Evaluation method of steam barrier property 有权
标题翻译：蒸汽障碍物的评价方法
公开(公告)号：JP2012154865A
公开(公告)日：2012-08-16
申请号：JP2011015964
申请日：2011-01-28
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： YOSHIDA YUUKI , ARIIZUMI KUMIKO , SAKURAI HIDEAKI , MAYUZUMI YOSHITAKA
IPC分类号： G01N15/08
摘要： PROBLEM TO BE SOLVED: To provide an evaluation method of a steam barrier property with which the steam barrier property of a steam barrier membrane can easily be evaluated without actually measuring steam permeability.SOLUTION: A method of evaluating a steam barrier property of a steam barrier membrane formed according to a vacuum film formation technique using a deposition material comprised of a first oxide (X) and a deposition material comprised of a second oxide (Y) or a deposition material containing both the first oxide (X) and the second oxide (Y) is characterized in evaluating a value of Scalculated from a formula (1) logS=-0.015×(θ×ΔB)-0.25 as a steam permeability S(g/m*day) of the steam barrier membrane measured under a condition of temperature 40°C and relative humidity 90%RH after leaving the steam barrier membrane for one hour under the condition of temperature 40°C and relative humidity 90%RH. In the formula (1), θ indicates a water droplet contact angle and ΔB indicates an absolute value of a difference between a basicity Bx of the first oxide (X) abd a basicity By of the second oxide (Y).
摘要翻译：要解决的问题：提供一种蒸气阻隔性能的评估方法，其中蒸汽阻隔膜的蒸汽阻隔性能可以容易地评估，而实际上不测量蒸汽渗透性。解决方案：根据使用由第一氧化物（X）和由第二氧化物（Y）构成的沉积材料构成的沉积材料的真空成膜技术形成的蒸气阻隔膜的蒸汽阻隔性的评价方法，或包含第一氧化物（X）和第二氧化物（Y）的沉积材料的特征在于评估由公式（1）计算的S 1 的值 POS =“POST”> 10 S 1 = - 0.015×（θ×ΔB）-0.25作为透水率S（g / m 2 *天）湿度90％RH。在式（1）中，θ表示水滴接触角，ΔB表示第一氧化物（X）的碱度Bx与第二氧化物（Y）的碱度In之差的绝对值。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2012158821A Method for producing thin film and vapor deposition material for co-vapor deposition for forming thin film, thin film obtained by the method, thin film sheet having the thin film, and laminated sheet 有权
标题翻译：用于生产薄膜的蒸汽沉积材料和用于形成薄膜的蒸发沉积材料的方法，通过该方法获得的薄膜，具有薄膜的薄膜和层压板
公开(公告)号：JP2012158821A
公开(公告)日：2012-08-23
申请号：JP2011020717
申请日：2011-02-02
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： ARIIZUMI KUMIKO , YOSHIDA YUUKI , SAKURAI HIDEAKI
IPC分类号： C23C14/08 , B32B9/00
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a thin film superior in transparency and gas barrier property, to provide a vapor deposition material for co-vapor deposition, which is suitable for forming the thin film, to provide a thin film obtained by the method, and to provide a thin film sheet having the thin film and a laminated sheet.SOLUTION: The method for producing a thin film is characterized by using a sublimable vapor deposition material composed of a first oxide and a sublimable vapor deposition material composed of a second oxide different from the first oxide, and then forming an oxide thin film constituted of the first oxide and the second oxide on a substrate by a co-vapor deposition method comprising simultaneously vapor depositing the oxides by a vacuum film deposition process.
摘要翻译：要解决的问题：为了提供一种透明性和气体阻隔性优异的薄膜的制造方法，提供适合于形成薄膜的共蒸气沉积用气相沉积材料，以提供薄的通过该方法获得的膜，并提供具有薄膜的薄膜片和层压片。解决方案：薄膜的制造方法的特征在于，使用由第一氧化物构成的升华性气相沉积材料和由与第一氧化物不同的第二氧化物构成的升华性气相沉积材料，然后形成氧化物薄膜通过共蒸镀方法在基板上由第一氧化物和第二氧化物构成，其包括通过真空膜沉积工艺同时气相沉积氧化物。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2012092428A Vapor deposition material for thin film deposition, thin film sheet provided with the thin film, and laminated sheet 有权
标题翻译：用于薄膜沉积的蒸气沉积材料，薄膜提供的薄膜和层压板
公开(公告)号：JP2012092428A
公开(公告)日：2012-05-17
申请号：JP2011182337
申请日：2011-08-24
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： MAYUZUMI YOSHIAKI , ARIIZUMI KUMIKO , YOSHIDA YUUKI , SAKURAI HIDEAKI
IPC分类号： C23C14/24 , B32B9/00 , C23C14/08 , H01L51/50 , H05B33/02 , H05B33/04
摘要： PROBLEM TO BE SOLVED: To provide: a vapor deposition material which is suitable for the deposition of a thin film having excellent transparency and gas barrier properties; a thin film sheet provided with the thin film; and a laminated sheet.SOLUTION: In the vapor deposition material made by mixing first oxide powder and second oxide powder, the first oxide powder is composed of MgO powder, purity of the first oxide in the first oxide powder is ≥98%, the second oxide powder is composed of CaO powder, and purity of the second oxide in the second oxide powder is ≥98%, the vapor deposition material is composed of a pellet comprising first oxide particles and second oxide particles, the molar ratio between the first oxide and second oxide in the vapor deposition material is (5 to 99):(95 to 1), and also, basicity of the pellet is ≥0.1.
摘要翻译：要解决的问题：提供：适用于沉积具有优异的透明性和阻气性的薄膜的气相沉积材料; 设置有薄膜的薄膜片; 和层压片。解决方案：在通过混合第一氧化物粉末和第二氧化物粉末制备的蒸镀材料中，第一氧化物粉末由MgO粉末组成，第一氧化物粉末中第一氧化物的纯度≥98％，第二氧化物粉末由CaO粉末构成，第二氧化物粉末中的第二氧化物的纯度为≥98％，蒸镀材料由包含第一氧化物粒子和第二氧化物粒子的粒料构成，第一氧化物和第二氧化物之间的摩尔比在蒸镀材料中为（5〜99）：（95〜1），粒料的碱度≥0.1。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2014019934A Sputtering target and method for producing the same 有权
标题翻译：溅射目的及其制造方法
公开(公告)号：JP2014019934A
公开(公告)日：2014-02-03
申请号：JP2012162291
申请日：2012-07-23
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： IGARASHI KAZUNORI , WATANABE MUNEAKI , YOSHIDA YUUKI , ISHIYAMA KOICHI , MORI AKIRA
IPC分类号： C23C14/34 , C22C1/04 , C22C9/00
摘要： PROBLEM TO BE SOLVED: To provide a sputtering target of Cu-Ga sintered body capable of further reducing an oxygen content and suppressing an abnormal discharge, and a method for producing the same.SOLUTION: The sputtering target comprises a sintered body, which has a component composition containing 20 at% to less than 30 at% of Ga, and a remainder of Cu and inevitable impurities, in which a diffraction peak attributed to a γ phase and a diffraction peak attributed to a ζ phase of CuGa are observed via an X-ray diffraction. A main peak intensity of the diffraction peak attributed to the ζ phase is more than 10% of a main peak intensity of the diffraction peak attributed to the γ phase, an oxygen content is 100 ppm or less, and a mean particle diameter is 100 μm or less.
摘要翻译：要解决的问题：提供能够进一步降低氧含量并抑制异常放电的Cu-Ga烧结体的溅射靶及其制造方法。解决方案：溅射靶包括烧结体，其具有含有20at％至小于30at％的Ga的组分组合物，剩余的Cu和不可避免的杂质，其中归因于γ相的衍射峰和归因于CuGa的ζ相的衍射峰通过X 射线衍射。归因于ζ相的衍射峰的主峰强度大于归因于γ相的衍射峰的主峰强度的10％以上，氧含量为100ppm以下，平均粒径为100μm 或更少。

9. 发明专利

JP2012167359A Steam barrier film 有权
标题翻译：蒸汽干燥膜
公开(公告)号：JP2012167359A
公开(公告)日：2012-09-06
申请号：JP2011070151
申请日：2011-03-28
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： YOSHIDA YUUKI , ARIIZUMI KUMIKO , SAKURAI HIDEAKI , MAYUZUMI YOSHIAKI
IPC分类号： C23C14/08 , B32B9/00
摘要： PROBLEM TO BE SOLVED: To provide a steam barrier film having high steam barrier properties.SOLUTION: The steam barrier film is composed of two types of oxides, and formed by a co-evaporation method in which an evaporation material composed of a first oxide (X) and an evaporation material composed of a second oxide (Y) are used and simultaneously evaporated by reactive plasma evaporation. The barrier film satisfies θ×ΔB≥50 (50°≤θ≤125°, ΔB>0.4) when the film thickness of the barrier film is within the range of 30-500 nm, wherein θ represents a droplet contact angle in the steam barrier film which is held for one day in conditions of temperature 25°C and relative humidity 50% RH after the film formation, and ΔB represents an absolute value of the difference between basicity Bof the first oxide (X) and basicity Bof the second oxide (Y). When the content ratio of the first oxide (X) in the steam barrier film is x mole, and the content ratio of the second oxide (Y) is y mole, x and y satisfy 0.05≤x/(x+y)≤0.95.
摘要翻译：要解决的问题：提供具有高蒸汽阻隔性的蒸气阻隔膜。解决方案：蒸气阻挡膜由两种氧化物组成，并通过共蒸发法形成，其中由第一氧化物（X）和由第二氧化物（Y）组成的蒸发材料组成的蒸发材料，被反应等离子体蒸发同时蒸发。当阻挡膜的膜厚在30-500nm的范围内时，阻挡膜满足θ×ΔB≥50（50°≤θ≤125°，ΔB> 0.4），其中θ表示蒸汽中的液滴接触角在成膜后在温度25℃，相对湿度50％RH的条件下保持一天的阻挡膜，ΔB表示碱度B X Y 。当蒸气阻隔膜中的第一氧化物（X）的含量比为x摩尔，第二氧化物（Y）的含量比为y摩尔时，x和y满足0.05≤x/（x + y）≤0.95 。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2012092429A Vapor deposition material for depositing thin film, thin film sheet provided with the thin film, and laminated sheet 有权
标题翻译：用于沉积薄膜的蒸气沉积材料，薄膜提供的薄膜和层压片
公开(公告)号：JP2012092429A
公开(公告)日：2012-05-17
申请号：JP2011182339
申请日：2011-08-24
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： MAYUZUMI YOSHIAKI , ARIIZUMI KUMIKO , YOSHIDA YUUKI , SAKURAI HIDEAKI
IPC分类号： C23C14/24 , B32B9/00 , C23C14/08
摘要： PROBLEM TO BE SOLVED: To provide: a vapor deposition material which is suitable for the deposition of a thin film having excellent transparency and gas barrier properties; a thin film sheet provided with the thin film; and a laminated sheet.SOLUTION: In the vapor deposition material made by mixing first oxide powder and second oxide powder, the first oxide powder is composed of MgO powder, purity of the first oxide in the first oxide powder is ≥98%, the second oxide powder is composed of a powdery mixture of CaO and ZnO, and purity of the second oxide in the second oxide powder is ≥98%. The vapor deposition material is composed of a pellet comprising first oxide particles and second oxide particles, the molar ratio between the first oxide and the second oxide in the vapor deposition material is (5 to 90):(95 to 10), and also, basicity of the pellet is ≥0.1.
摘要翻译：要解决的问题：提供：适用于沉积具有优异的透明性和阻气性的薄膜的气相沉积材料; 设置有薄膜的薄膜片; 和层压片。解决方案：在通过混合第一氧化物粉末和第二氧化物粉末制备的蒸镀材料中，第一氧化物粉末由MgO粉末组成，第一氧化物粉末中第一氧化物的纯度≥98％，第二氧化物粉末由CaO和ZnO的粉末混合物组成，第二氧化物粉末中的第二氧化物的纯度为≥98％。气相沉积材料由包含第一氧化物颗粒和第二氧化物颗粒的颗粒组成，气相沉积材料中第一氧化物和第二氧化物之间的摩尔比为（5-90）：（95-10）），颗粒的碱度≥0.1。版权所有（C）2012，JPO＆INPIT

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