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1. 发明专利

JP2015060884A 太陽電池およびその製造方法审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：JP2015060884A
公开(公告)日：2015-03-30
申请号：JP2013192228
申请日：2013-09-17
申请人：三菱電機株式会社 , Mitsubishi Electric Corp
发明人： SHINAGAWA TOMOHIRO , FURUHATA TAKEO , YAMAGUCHI SHINSAKU
IPC分类号： H01L31/06
CPC分类号： Y02E10/545 , Y02E10/547 , Y02E10/548
摘要：【課題】n型の非晶質シリコン系薄膜層中へのボロン原子の拡散を抑制し、裏面電界効果の低下を抑制することのできる太陽電池およびその製造方法を得る。【解決手段】少なくとも最表面がn型である第2主面1Bをもつ、一導電型のシリコン系基板としてのn型単結晶シリコン基板1の第1主面1Aに順次積層された、第1の非晶質シリコンi層21と、非晶質シリコンp層22と、第1の透光性導電膜23とを備えている。そして少なくともn型単結晶シリコン基板1の側面から第2主面1Bの周縁にかけて、ジボラン(B2H6)の分解により得られたボロン原子を不純物とする非晶質シリコンp層22の下層に酸化シリコン層4を有する。【選択図】図1
摘要翻译：要解决的问题：提供一种通过抑制硼原子扩散到n型非晶硅基薄膜层中能够抑制背面电场效应降低的太阳能电池，并且还提供一种制造相同。解决方案：太阳能电池包括依次层压在n型单晶硅衬底的第一主表面1A上的第一非晶硅i层21，非晶硅p层22和第一半透明导电膜23 1作为一种导电型硅衬底，其具有至少最外表面为n型的第二主表面1B。然后，从n型单晶硅衬底1的至少侧表面到第二主表面1B的周缘，将氧化硅层4设置为具有硼原子的非晶硅p层22下面的层通过分解乙硼烷（BH）作为杂质获得。

2. 发明专利

JP2012117089A Thin film production apparatus, and method of producing thin film solar cell 审中-公开
标题翻译：薄膜生产设备，以及生产薄膜太阳能电池的方法
公开(公告)号：JP2012117089A
公开(公告)日：2012-06-21
申请号：JP2010265501
申请日：2010-11-29
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： NAKAMURA KEISUKE , FURUHATA TAKEO , YAMAGUCHI SHINSAKU , NISHIKAWA YUSUKE
IPC分类号： C23C14/34 , H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a thin film production apparatus that can control temperature with high accuracy by preventing the temperature on surfaces of such apparatus that come into contact with a gas phase as a high-frequency application electrode, a substrate electrode, and a wall of a reaction chamber from rising even if a large electric power is applied to the high-frequency application electrode.SOLUTION: The thin film production apparatus 10 includes: a film-forming chamber 11 having thereinside the substrate electrode 12 and the high-frequency application electrode 13 provided opposite to the substrate electrode 12; and a high-frequency power source 15 for supplying a high-frequency electric power to the high-frequency application electrode 13. The thin film production apparatus further includes: a plurality of cooling systems 20 and 30 to be provided for each coolant having different temperature, the cooling systems respectively including pipe arrangements 22 and 32 provided on a component of which a region comes into contact with the gas, and chillers 21 and 31 for circulating the coolant having predetermined temperature through the pipe arrangements 22 and 32; and a flow rate-controlling unit 16 for controlling flow rates of the coolants in the cooling systems 20 and 30 respectively, so that the temperature of the component becomes a predetermined temperature, according to the change of heat-input volume to the component due to on/off of the supply of electric power to the high-frequency application electrode 13 by the high-frequency power source 15.
摘要翻译：解决的问题：为了提供一种可以通过防止与气相接触的这种装置的表面上的温度作为高频施加电极而能够高精度地控制温度的薄膜制造装置，基板电极即使向高频施加电极施加大的电力，反应室的壁也上升。解决方案：薄膜制造装置10包括：在基板电极12和与基板电极12相对设置的高频施加电极13之间的膜形成室11; 以及用于向高频施加电极13提供高频电力的高频电源15.薄膜制造装置还包括：为具有不同温度的每个冷却剂提供的多个冷却系统20和30 分别包括设置在区域与气体接触的部件上的管道装置22和32以及用于使具有预定温度的冷却剂循环通过管道装置22和32的冷却器21和31; 以及流量控制单元16，用于分别控制冷却系统20和30中的冷却剂的流量，使得部件的温度变为预定温度，根据由于通过高频电源15对高频施加电极13的电力供应的开/关。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2011003663A Thin-film photoelectric conversion device 审中-公开
标题翻译：薄膜光电转换装置
公开(公告)号：JP2011003663A
公开(公告)日：2011-01-06
申请号：JP2009144491
申请日：2009-06-17
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： YAMAGUCHI SHINSAKU , KONISHI HIROFUMI , TOKIOKA HIDETADA
IPC分类号： H01L31/052 , H01L31/04
CPC分类号： Y02E10/52
摘要： PROBLEM TO BE SOLVED: To provide a thin-film photoelectric conversion device that is configured by improving utilization efficiency of converted light and preventing a series resistive component from being increased by utilizing an up conversion material.SOLUTION: In this thin-film photoelectric conversion device, a transparent conductive layer 2, photoelectric conversion layers 32, 42, 62, a transparent conductive layer 7 and a back reflecting electrode layer 9 are sequentially laminated on an insulating transparent substrate 1. The thin-film photoelectric conversion device includes a wavelength conversion layer 8 between the transparent conductive layer 7 and the back reflecting electrode layer 9, wherein the wavelength conversion layer 8 contains a material for converting the wavelength of light having entered from the insulating transparent substrate 1 and having passed through the photoelectric conversion layers 32, 42, 62 to further small wavelength, and includes conductive parts 10 for electrically connecting the transparent conductive layer 7 to the back reflecting electrode layer 9 in the layer.
摘要翻译：要解决的问题：提供一种薄膜光电转换装置，其通过提高转换光的利用效率和通过利用上转换材料来防止串联电阻分量增加而构成。解决方案：在该薄膜光电转换装置透明导电层2，光电转换层32,42,62，透明导电层7和背反射电极层9依次层叠在绝缘透明基板1上。薄膜光电转换元件包括波长转换层透明导电层7和背反射电极层9之间的距离为8°，其中波长转换层8含有用于转换从绝缘性透明基板1进入并穿过光电转换层32,42的光的波长的材料， 62进一步小波长，并且包括导电部件 10，用于将透明导电层7电连接到层中的背反射电极层9。

4. 发明专利

JP2014130943A Solar cell and manufacturing method therefor 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：JP2014130943A
公开(公告)日：2014-07-10
申请号：JP2012288408
申请日：2012-12-28
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： NAKAMURA KEISUKE , YAMAMUKA MIKIO , FURUHATA TAKEO , YAMAGUCHI SHINSAKU , SHINAGAWA TOMOHIRO , YASUI SHINICHI
IPC分类号： H01L31/06 , H01L21/205
CPC分类号： Y02E10/547 , Y02E10/548
摘要： PROBLEM TO BE SOLVED: To form an excellent junction interface by maintaining the interface of an n-type semiconductor layer deposited on a rear side and a crystal silicon substrate in a clean state of less impurities, when using an n-type crystal silicon substrate as the crystal silicon substrate, in the manufacture of a heterojunction solar cell.SOLUTION: A manufacturing method of a solar cell includes a first step for forming a protective layer on the rear side of a crystalline semiconductor substrate, a second step for forming an intrinsic semiconductor layer and a p-type amorphous semiconductor layer on a light-receiving surface, a third step for removing the protective layer, and a fourth layer for forming an intrinsic semiconductor layer and an n-type amorphous semiconductor layer on the rear side, being carried out in this order.
摘要翻译：要解决的问题：为了通过保持沉积在后侧的n型半导体层与晶体硅衬底的界面在较少杂质的清洁状态下形成优异的接合界面，当使用n型晶体硅衬底作为晶体硅衬底，制造异质结太阳能电池。解决方案：太阳能电池的制造方法包括在晶体半导体衬底的后侧形成保护层的第一步骤，用于形成本征半导体的第二步骤层和在受光面上的p型非晶半导体层，用于去除保护层的第三步骤，以及用于形成背面的本征半导体层和n型非晶半导体层的第四层，被携带在这个顺序。

5. 发明专利

JP2014072406A Solar cell and manufacturing method therefor, solar cell module 审中-公开
标题翻译：太阳能电池及其制造方法，太阳能电池模块
公开(公告)号：JP2014072406A
公开(公告)日：2014-04-21
申请号：JP2012217875
申请日：2012-09-28
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SHINAGAWA TOMOHIRO , YAMAGUCHI SHINSAKU , YASUI SHINICHI , SUGAWARA KATSUTOSHI , TANIGUCHI TOMOYUKI , FURUHATA TAKEO
IPC分类号： H01L31/06
CPC分类号： Y02E10/548
摘要： PROBLEM TO BE SOLVED: To provide a solar cell having an intrinsic amorphous silicon-based thin film layer between a conductivity type crystal silicon-based substrate and a conductivity type crystal silicon-based thin film layer, in which defects on the boundary surface of the conductivity type crystal silicon-based substrate and in the intrinsic amorphous silicon-based thin film layer are reduced and excellent photoelectric conversion efficiency is ensured.SOLUTION: In a solar cell where an intrinsic amorphous silicon-based thin film layer 21, a conductivity type crystal silicon-based thin film layer 22, and an electrode 23 are laminated, in this order, on a principal surface of a conductivity type crystal silicon-based substrate 1, the intrinsic amorphous silicon-based thin film layer 21 has, as a plurality of peaks of hydrogen density, one or more film peak in the film, and one more surface layer peak in the boundary region to the conductivity type crystal silicon-based thin film layer 22.
摘要翻译：要解决的问题：为了提供在导电型晶体硅基基板和导电型晶体硅基薄膜层之间具有本征非晶硅基薄膜层的太阳能电池，其中，在导电型晶体硅基基板和本征非晶硅基薄膜层中的光电转换效率降低，并且确保了优异的光电转换效率。在本征非晶硅系薄膜层21，导电型晶体硅基薄膜层22和电极23依次叠层在导电型晶体硅基基板1的主表面上，本征非晶硅基薄膜层21具有多个氢密度峰，膜中的一个或多个膜峰，以及边界区中另一个表面层峰到导电型晶体硅基薄膜层呃22。

6. 发明专利

JP2012186205A Method and apparatus for manufacturing thin-film silicon solar cell 审中-公开
标题翻译：制造薄膜太阳能电池的方法和装置
公开(公告)号：JP2012186205A
公开(公告)日：2012-09-27
申请号：JP2011046420
申请日：2011-03-03
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SHINTANI KENJI , YAMAMUKA MIKIO , YAMAGUCHI SHINSAKU
IPC分类号： H01L31/04
CPC分类号： Y02E10/545 , Y02E10/548
摘要： PROBLEM TO BE SOLVED: To obtain a method and an apparatus for manufacturing a thin-film silicon solar cell excellent in photoelectric conversion efficiency and yield.SOLUTION: The method for manufacturing a thin-film silicon solar cell includes: a haze ratio measuring step of measuring a haze ratio of a substrate on one surface of which a texture is formed; a film-forming condition determining step of determining film-forming conditions of a silicon-containing film on the basis of measurement results of the haze ratio of the substrate; and a film-forming step of forming a photoelectric conversion cell composed of a microcrystalline silicon-containing film on the substrate by a CVD method in accordance with the film-forming conditions determined in the film-forming condition determining step.
摘要翻译：要解决的问题：获得光电转换效率和产率优异的薄膜硅太阳能电池的制造方法和装置。解决方案：薄膜硅太阳能电池的制造方法包括：雾度比测量步骤，测量其一个表面上形成纹理的基板的雾度比; 基于所述基板的雾度比的测量结果确定含硅膜的成膜条件的成膜条件确定步骤; 以及成膜步骤，根据成膜条件确定步骤中确定的成膜条件，通过CVD法在基板上形成由微晶硅膜组成的光电转换单元。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2010278148A Photovoltaic apparatus and method of manufacturing the same 审中-公开
标题翻译：光电装置及其制造方法
公开(公告)号：JP2010278148A
公开(公告)日：2010-12-09
申请号：JP2009128033
申请日：2009-05-27
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： YASHIKI YASUSATO , YAMAGUCHI SHINSAKU
IPC分类号： H01L31/04
CPC分类号： Y02E10/52
摘要： PROBLEM TO BE SOLVED: To provide a photovoltaic apparatus capable of absorbing solar light more efficiently even in a photovoltaic apparatus having a structure in which strip-like unit cells are connected in series via an isolation trench on a translucent insulating substrate. SOLUTION: In a photovoltaic apparatus, a cell 10 including a surface electrode layer 11 formed by a transparent conductive material, a photoelectric conversion layer 12 including a semiconductor material that converts light into electricity, and a back surface electrode layer 14 consisting of a conductive material, is formed on an insulating translucent substrate 2. The back surface electrode layer 14 of the cell 10 is connected with the surface electrode layer 11 of an adjacent cell 10 in an isolation trench 22 formed between the cell and the photoelectric conversion layer 12 of the adjacent cell 10, and the plurality of cells 10 are connected in series. The photovoltaic apparatus has a lamination light reflection film 15 in which two or more kinds of material having a refractive index different from each other so as to cover at least the side and the bottom surface of the isolation trench 22. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够更有效地吸收太阳光的光电装置，即使在具有带状单电池通过半透明绝缘基板上的隔离沟串联连接的结构的光电装置中也是如此。解决方案：在光电装置中，包括由透明导电材料形成的表面电极层11的电池10，包括将光转换为电的半导体材料的光电转换层12和由导电材料形成在绝缘性透光性基板2上。电池单元10的背面电极层14与形成在电池单元和光电转换层之间的隔离沟槽22中的相邻电池单元10的表面电极层11连接 12，并且多个单元10串联连接。光电装置具有叠层光反射膜15，其中折射率彼此不同的两种或多种材料至少覆盖隔离沟槽22的侧表面和底表面。 C）2011，JPO＆INPIT

8. 发明专利

JP2013118351A Manufacturing apparatus for solar cell, solar cell, and manufacturing method for solar cell 有权
标题翻译：用于太阳能电池，太阳能电池的制造装置和太阳能电池的制造方法
公开(公告)号：JP2013118351A
公开(公告)日：2013-06-13
申请号：JP2012202923
申请日：2012-09-14
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： NAKAMURA KEISUKE , YAMAGUCHI SHINSAKU
IPC分类号： H01L21/205 , C23C16/54 , H01L21/677
CPC分类号： Y02E10/50 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To lower the manufacturing cost of a heterojunction solar cell.SOLUTION: The manufacturing apparatus for solar cell includes: a substrate holder configured to hold a plurality of substrates in plane so that a first main surface and a second main surface of each of the substrates are both exposed; a pre-filming chamber in which a first film is formed on the first main surface of the substrate when the substrate holder is carried in to an anode electrode side; a post-filming chamber in which a second film is formed on the second main surface of the substrate when the substrate holder is carried in to the anode electrode side; a movement chamber connecting the pre-filming chamber and the post-filming chamber so as to convey the substrate holder from the pre-filming chamber to the post-filming chamber without opening the inside to the atmosphere; and a conveying mechanism which conveys the substrate holder along the first main surface at the major part of a conveyance path from the pre-filming chamber to the post-filming chamber without opening the inside to the atmosphere.
摘要翻译：要解决的问题：降低异质结太阳能电池的制造成本。解决方案：太阳能电池的制造装置包括：基板保持器，被构造成将多个基板保持在平面中，使得每个基板的第一主表面和第二主表面都被暴露; 预成膜室，其中当所述基板保持器被承载到阳极电极侧时，在所述基板的所述第一主表面上形成有第一膜; 一个后成像室，其中当衬底保持器被传送到阳极电极侧时，在衬底的第二主表面上形成第二膜; 连接预成膜室和后成膜室的移动室，以便将基板保持件从预成膜室输送到后成膜室，而不将内部打开到大气中; 以及输送机构，其将沿着输送路径的主要部分的第一主表面从预成膜室输送到后成像室，而不将内部打开到大气中。版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2012256776A Manufacturing method of thin-film photoelectric conversion device 审中-公开
标题翻译：薄膜光电转换装置的制造方法
公开(公告)号：JP2012256776A
公开(公告)日：2012-12-27
申请号：JP2011129844
申请日：2011-06-10
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TOMOHISA SHINGO , YASHIKI YASUSATO , YAMAGUCHI SHINSAKU
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a thin-film photoelectric conversion device capable of obtaining an excellent photoelectric conversion efficiency.SOLUTION: A manufacturing method of a thin-film photoelectric conversion device which laminates and forms a plurality of photoelectric conversion units including a photoelectric conversion layer which is composed of a semiconductor film and performs photoelectric conversion between a first electrode layer composed of a conductive film and a second electrode layer composed of a transparent conductive film comprises a step of forming a first photoelectric conversion unit of a first electrode layer side among the plural photoelectric conversion units and a step of forming a second photoelectric conversion unit of a second electrode layer side among the plural photoelectric conversion units. The step of forming the first photoelectric conversion unit forms a first concave-convex shape on a surface of the first electrode layer side and forms a second concave-convex shape having a concave-convex level difference smaller than the first concave-convex shape or a short concave-convex pitch on a surface of the second electrode layer side. The step of forming the second photoelectric conversion unit forms a concave-convex shape in which the second concave-convex shape was reflected on the surface of the second electrode layer side and forms a photoelectric conversion layer composed of a material whose absorption wavelength is shorter than a photoelectric conversion layer of the first photoelectric conversion unit.
摘要翻译：要解决的问题：提供能够获得优异的光电转换效率的薄膜光电转换装置的制造方法。解决方案：一种薄膜光电转换装置的制造方法，其层压并形成包括由半导体膜构成的光电转换层的多个光电转换单元，并在由第一电极层导电膜和由透明导电膜构成的第二电极层包括在多个光电转换单元之间形成第一电极层侧的第一光电转换单元的步骤和形成第二电极层的第二光电转换单元的步骤在多个光电转换单元之间。形成第一光电转换单元的步骤在第一电极层侧的表面上形成第一凹凸形状，并且形成具有小于第一凹凸形状的凹凸级别差的第二凹凸形状或在第二电极层侧的表面上具有短凹凸距离。形成第二光电转换单元的步骤形成凹凸形状，其中第二凹凸形状在第二电极层侧的表面上被反射，并形成由吸收波长短于第一光电转换单元的光电转换层。版权所有（C）2013，JPO＆INPIT

10. 发明专利

JP2012219288A Thin film fabricating apparatus and thin film fabrication method 审中-公开
标题翻译：薄膜生产设备和薄膜生产方法
公开(公告)号：JP2012219288A
公开(公告)日：2012-11-12
申请号：JP2011083702
申请日：2011-04-05
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： YAMAMUKA MIKIO , SHINTANI KENJI , YAMAGUCHI SHINSAKU
IPC分类号： C23C16/44 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a thin film fabricating apparatus which can fabricate a thin film of excellent physical properties by eliminating influence of reaction products remaining during cleaning treatment without newly generating impurities or damaging inside of a film deposition chamber.SOLUTION: The thin film fabricating apparatus includes a film deposition chamber 11, a stage 12, a raw material gas supply means for supplying raw material gas in the film deposition chamber 11, a cleaning gas supply means for supplying cleaning gas which is reacted with deposits adhered in the film deposition chamber 11 caused by forming the film and generates reaction products into the film deposition chamber 11, a reaction product removing gas supply means for supplying reaction product removing gas containing elements which is reacted with a component of the reaction product to generate gas into the film deposition chamber 11, a shower head 14 arranged opposite to the stage 12, and light sources 19a-19c for radiating the light having the energy for dissociating the reaction product and the reaction product removing gas. The light sources 19a-19c are arranged so as to irradiate an area in the film deposition chamber 11 to which the deposits are adhered, with light.
摘要翻译：要解决的问题：提供一种薄膜制造装置，其可以通过消除在清洁处理期间剩余的反应产物的影响而不会产生杂质或损坏成膜室内部的物质的薄膜。＆lt; P＆gt;解决方案：薄膜制造装置包括成膜室11，台12，用于在成膜室11中供应原料气体的原料气体供给装置，用于供给清洁气体的清洁气体供给装置，与附着在成膜室11中的沉积物反应，并通过形成膜产生反应产物到反应产物去除气体供应装置，该反应产物除去气体供应装置包含与反应成分反应的元素产生气体进入成膜室11，与台12相对设置的淋浴喷头14，以及用于照射具有用于解离反应产物和反应产物除去气体的能量的光的光源19a-19c。光源19a-19c被布置成用光照射沉积物附着的成膜室11中的区域。版权所有（C）2013，JPO＆INPIT

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