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    • 1. 发明专利
    • Surface treatment method for conductive base material for mounting tape carrier-fitted semiconductor, conductive base material for mounting tape carrier-fitted semiconductor obtained by using the treatment method, and semiconductor package
    • 用于安装带状载体半导体的导电基材的表面处理方法,用于使用处理方法获得的用于安装带状载体的半导体的导电基材和半导体封装
    • JP2013023766A
    • 2013-02-04
    • JP2011163092
    • 2011-07-26
    • Hitachi Chemical Co Ltd日立化成工業株式会社
    • INOUE FUMIOYAMASHITA TOMOAKIHIROYAMA YUKIHISASAKAYORI KAZUHIKO
    • C23F1/18H01L23/12H01L23/28H01L23/50
    • H01L2224/32245H01L2224/48091H01L2224/48247H01L2224/73265H01L2224/92247H01L2924/00014H01L2924/00
    • PROBLEM TO BE SOLVED: To provide: a surface treatment method for a conductive base material for mounting a tape carrier-fitted semiconductor which can improve reliability and adhesive properties with a sealing material; a conductive base material for mounting a tape carrier-fitted semiconductor obtained by using the treatment method; and a semiconductor package obtained by using them.SOLUTION: The surface treatment method for a conductive base material for mounting a tape carrier-fitted semiconductor includes a first roughening step of bringing a conductive base material for mounting a tape carrier-fitted semiconductor into contact with a first chemical roughening liquid including a corrosion inhibitor to form a roughened shape on the surface of the conductive base material for mounting a semiconductor. The surface treatment method for a conductive base material for mounting a tape carrier-fitted semiconductor further includes a second roughening step of bringing the same into contact with a second chemical roughening liquid including a corrosion inhibitor after the first roughening step. The conductive base material for mounting a tape carrier-fitted semiconductor is obtained by using the surface treatment. The semiconductor package is obtained by using them.
    • 要解决的问题:提供一种用于安装带状载体配合半导体的导电性基材的表面处理方法,其能够利用密封材料提高可靠性和粘合性; 用于安装通过使用所述处理方法获得的带状载体配合半导体的导电基材; 以及通过使用它们获得的半导体封装。 解决方案:用于安装带状载体安装半导体的导电基材的表面处理方法包括:第一粗糙化步骤,将用于安装载带配合半导体的导电性基材与第一化学粗糙化液接触,所述第一化学粗糙化液包括 在用于安装半导体的导电性基材的表面上形成粗糙化形状的腐蚀抑制剂。 用于安装带状载体半导体的导电基材的表面处理方法还包括在第一粗糙化步骤之后使其与含有腐蚀抑制剂的第二化学粗糙化液接触的第二粗糙化步骤。 通过使用表面处理获得用于安装带状载体配合半导体的导电性基材。 通过使用半导体封装。 版权所有(C)2013,JPO&INPIT
    • 2. 发明专利
    • Method for treating surface of copper
    • 铜的表面处理方法
    • JP2012082528A
    • 2012-04-26
    • JP2012021932
    • 2012-02-03
    • Hitachi Chemical Co Ltd日立化成工業株式会社
    • INOUE FUMIOYAMASHITA TOMOAKIHIROYAMA YUKIHISASAKAYORI KAZUHIKO
    • C23C22/52H01L23/50
    • H01L2224/32225H01L2224/32245H01L2224/48091H01L2224/48227H01L2224/48247H01L2224/73265H01L2224/92247H01L2924/15311H01L2924/00014H01L2924/00
    • PROBLEM TO BE SOLVED: To provide a method for treating the surface of a conductive base material for semiconductor packaging, which has satisfactory adhesive properties with a sealing material or the like, can suppress deterioration in electrical properties and heat dissipation, can be subjected to low temperature treatment, has excellent productivity, and is hard to be attached with marks such as cracks and rubbing.SOLUTION: The method for treating the surface of copper includes a roughening process of contacting a chemical roughening liquid containing a corrosion inhibitor, sulfuric acid and hydrogen peroxide to form a roughened shape on the surface of copper. The corrosion inhibitor contains 1,2,3-benzotriazole and 5-amino-1H-tetrazole. The method for treating the surface of copper includes a film removing process of removing an organic film formed on the surface in the roughening process, by bringing the organic film into contact with an alkaline solution containing amine and an alkali metal compound selected from sodium hydroxide and potassium hydroxide, after the roughening process.
    • 解决的问题:为了提供一种用于处理与密封材料等具有令人满意的粘合性能的用于半导体封装的导电性基材的表面的方法,可以抑制电性能和散热的劣化,可以是 进行低温处理,生产率优异,难以附着,例如裂纹和摩擦等。 解决方案:处理铜表面的方法包括使含有腐蚀抑制剂,硫酸和过氧化氢的化学粗化液体接触在铜表面上形成粗糙形状的粗糙化工艺。 腐蚀抑制剂含有1,2,3-苯并三唑和5-氨基-1H-四唑。 用于处理铜表面的方法包括通过使有机膜与含有胺和碱金属化合物的碱性溶液接触来除去在粗糙化工艺中在表面上形成的有机膜的膜去除方法,所述碱性溶液选自氢氧化钠和碱金属化合物, 氢氧化钾,经过粗糙化处理。 版权所有(C)2012,JPO&INPIT
    • 4. 发明专利
    • Copper surface treatment liquid set, surface treatment method for copper using the same, copper, wiring board and semiconductor package
    • 铜表面处理液体组合物,使用其的铜表面处理方法,铜,接线板和半导体封装
    • JP2008088543A
    • 2008-04-17
    • JP2007039883
    • 2007-02-20
    • Hitachi Chem Co Ltd日立化成工業株式会社
    • YAMASHITA TOMOAKIINOUE FUMIO
    • C23C22/63C23C22/78H01L23/12H05K3/38
    • H01L2224/16225H01L2224/32225H01L2224/48091H01L2224/48227H01L2224/73204H01L2224/73265H01L2924/15311H01L2924/00014H01L2924/00
    • PROBLEM TO BE SOLVED: To provide a copper surface treatment liquid set with which fine ruggedness with the Rz of ≤1 μm can be densely and uniformly formed on the surface of copper in a short time, to provide a surface treatment method for copper using the treatment liquid set, to provide copper surface-treated applying the surface treatment method, to provide a wiring board having copper wiring surface-treated applying the surface treatment method, and to provide a semiconductor package obtained by using the board. SOLUTION: The copper surface treatment liquid set is provided with: an acidic noble metal treatment liquid comprising the salt of a metal nobler than copper and discretely forming a metal nobler than copper on the surface of copper; and an alkaline oxidation treatment liquid comprising a phosphate and an oxidizer and oxidizing the surface of copper. Upon its use, a metal nobler than copper is discretely formed on the surface of copper using the noble metal treatment liquid, and thereafter, the copper surface is subjected to oxidation treatment using the oxidation treatment liquid, thus fine ruggedness by the dense and uniform crystals of copper oxide can be formed on the copper surface. COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:为了提供一种能够在短时间内在铜表面上致密均匀地形成具有≤1μm的Rz的微细凹凸的铜表面处理液体组合物,以提供表面处理方法 使用处理液体铜的铜,通过表面处理方法提供铜表面处理,以提供使用表面处理方法进行表面处理的铜布线的布线板,并提供通过使用该板获得的半导体封装。 解决方案:铜表面处理液体设置有:酸性贵金属处理液,其包含比铜更贵的金属盐,并且在铜表面离子地形成比铜更贵的金属; 以及包含磷酸盐和氧化剂并氧化铜表面的碱性氧化处理液。 使用时,使用贵金属处理液在铜表面上分离地形成比铜更贵的金属,然后利用氧化处理液对铜表面进行氧化处理,由此形成致密且均匀的晶体的微细凹凸 的铜表面可以形成氧化铜。 版权所有(C)2008,JPO&INPIT
    • 9. 发明专利
    • Copper foil surface treatment method, and copper foil
    • 铜箔表面处理方法和铜箔
    • JP2007291448A
    • 2007-11-08
    • JP2006120473
    • 2006-04-25
    • Hitachi Chem Co Ltd日立化成工業株式会社
    • YAMASHITA TOMOAKIINOUE YASUOMATSUURA MASAHARUITO TOYOKISHIMIZU AKIRAINOUE FUMIONAKASO AKISHI
    • C23C22/63C23C22/78C23C22/83
    • PROBLEM TO BE SOLVED: To provide a copper foil surface treatment method, and a copper foil capable of ensuring the bonding strength of an insulating resin such as a base resin and a surface of a copper foil by forming uniform unevenness without forming unevenness exceeding 1 μm on a surface of the copper foil, excellent in the etching property, and capable of forming a very fine wiring. SOLUTION: In the copper foil surface treatment method, a step of discretely depositing a metal nobler than copper on a surface of a copper foil and a step of performing the oxidation treatment thereafter on the surface of the copper foil with an alkaline solution containing an oxidizing agent are provided in a step of coarsening the copper foil. Further, in the copper foil, a metal nobler than copper is discretely deposited on the surface of the copper foil, and thereafter, the surface of the copper foil is subjected to oxidation treatment with the alkaline solution containing the oxidizing agent. COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:提供铜箔表面处理方法和能够通过形成均匀的凹凸而不形成不均匀性来确保基底树脂等绝缘树脂和铜箔的表面的接合强度的铜箔 在铜箔表面上超过1μm,蚀刻性能优异,能够形成非常精细的布线。 解决方案:在铜箔表面处理方法中,在铜箔的表面上离子沉积比铜更贵的步骤,然后用碱性溶液在铜箔的表面上进行氧化处理的步骤 在使铜箔粗化的工序中设置含有氧化剂的工序。 此外,在铜箔中,比铜更贵的金属离散地沉积在铜箔的表面上,然后用含有氧化剂的碱性溶液对铜箔的表面进行氧化处理。 版权所有(C)2008,JPO&INPIT