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1. 发明专利

JPH0582081B2 失效
公开(公告)号：JPH0582081B2
公开(公告)日：1993-11-17
申请号：JP30124788
申请日：1988-11-28
申请人： FUJITSU LTD
发明人： KOBAYASHI FUMIHIKO , UNNO ISAMU
IPC分类号： H01P1/203 , H01P7/08

2. 发明专利

JPH05251583A 失效
公开(公告)号：JPH05251583A
公开(公告)日：1993-09-28
申请号：JP7850291
申请日：1991-03-18
申请人： FUJITSU LTD
发明人： KOBAYASHI FUMIHIKO , UNNO ISAMU
IPC分类号： H01L23/12 , H01L23/14 , H01P5/08 , H05K9/00
摘要： PURPOSE:To enable transmission of high frequency signal to a printed board without mismatching of impedance and to realize good high frequency shield regarding a high frequency printed board circuit whereon a high frequency circuit is mounted. CONSTITUTION:A ground conductor layer 6 is constituted in one layer and a high frequency circuit 3 is constituted in the other layer. A central conductor 2a of a printed board mount type coaxial connector 2 is directly connected to a microstrip line 7 from the high frequency circuit 3 and a ground terminal 2b of the printed board mount type coaxial connector 2 is connected to the ground conductor layer 6 by using a through-hole 1b. A shield case 4 enclosing the high frequency circuit 3 is provided to constitute a shield case 4 to be connected to the ground conductor layer 6.

3. 发明专利

JPH0371811B2 失效
公开(公告)号：JPH0371811B2
公开(公告)日：1991-11-14
申请号：JP5609282
申请日：1982-04-06
申请人： FUJITSU LTD
发明人： SOGO HIROYUKI , OOSAWA ZENICHI , UNNO ISAMU , NISHIDA HARUKI
IPC分类号： H03D7/14 , H03D7/16 , H03D9/06

4. 发明专利

JPH0368227A LINEAR MULTISTAGE AMPLIFIER FOR MICROWAVE MILLIMETER WAVE 失效
公开(公告)号：JPH0368227A
公开(公告)日：1991-03-25
申请号：JP20406389
申请日：1989-08-07
申请人： FUJITSU LTD
发明人： UNNO ISAMU
IPC分类号： H04B1/26 , H04B1/04 , H04B7/15 , H04B17/00 , H04B17/18
摘要： PURPOSE:To easily discriminate the degradation of the transmission characteristic due to the occurrence of third inter-modulation distortion of an amplifier in each stage which is caused by degradation or damage of amplifying elements by providing a monitor circuit which monitors the bias voltage or the current of each amplifying element. CONSTITUTION:A monitor circuit 5 monitors not only a DC voltage VP of the detection output of a detector 2 indicating the power level of the output of an amplifier 1E in the last stage of a multistage amplifier 1 but also bias DC voltages or currents VA to VE of respective amplifying elements of amplifiers 1A to 1E in respective stages. Since an alarm of trouble is sent when these values are on the outside of a certain range, the output level of the amplifier in each stage is not considerably reduced at the time of damage of one amplifying element of this amplifier though balanced amplifiers are used as amplifiers in respective stages. Consequently, bias DC voltages or currents VA to VE of respective amplifying elements of amplifiers in respective stages are considerably reduced and the alarm due to degradation or damage of amplifying elements is sent even when the alarm due to the level reduction of the output power is not sent. Thus, the degradation in transmission characteristic of the amplifier in each stage is easily discriminated to improve the maintainability.

5. 发明专利

JPH02177703A MICROSTRIP LINE CIRCUIT 失效
公开(公告)号：JPH02177703A
公开(公告)日：1990-07-10
申请号：JP33241088
申请日：1988-12-28
申请人： FUJITSU LTD
发明人： UNNO ISAMU
IPC分类号： H01P3/08 , H01P5/02 , H05K1/02 , H05K3/10
摘要： PURPOSE:To select the range of an impedance of each circuit widely by using a conductor pattern apart from one side of a dielectric board in a circuit requiring a high impedance as a ground face and using a conductor pattern close to one side of the dielectric board in a circuit requiring a low impedance as a ground face. CONSTITUTION:A high frequency circuit made of a microstrip line is divided into an area B requiring a line of a comparatively low impedance Z1 and an area C requiring a line of a comparatively high impedance Z2 and conductor faces B, C which are respectively formed to positions at a thickness of t1 and t2 from one face A of the dielectric layer of the dielectric board 5 are used respectively as grounding faces. The quantity of suppressing a high frequency signal leaked from the high frequency circuit to the power supply 8 depends on the ratio of the impedance of the high frequency choke reaching the power supply circuit 8 to the power supply impedance. Then a required impedance ratio is obtained by selecting either of the conductor grounding faces B,C in the microwave amplifier.

6. 发明专利

JPH01317032A HETERODYNE RECEIVER BY SPACE DIVERSITY SYSTEM 失效
公开(公告)号：JPH01317032A
公开(公告)日：1989-12-21
申请号：JP14937188
申请日：1988-06-17
申请人： FUJITSU LTD
发明人： UNNO ISAMU
IPC分类号： H04B7/08
摘要： PURPOSE:To ensure desired isolation between both frequency conversion sections by interposing an amplifier for local oscillation amplification to a connection path to a frequency conversion section of main/sub reception systems via a common power distributor from a local oscillator. CONSTITUTION:An amplifier 7 is inserted to each connection line to both the frequency conversion sections 2, 3 via a common power distributor 6 from a local oscillator 1. Thus, an undesired wave from, e.g., the frequency conversion section 2 to the power distributor 6 of the local oscillator 1 is subjected to isolation because the amplifier 7 is inserted in opposite polarity. Even in the presence of the undesired wave leaked regardless of the isolation, since the reverse loss of the amplifier 7 is sufficiently large, the adverse influence onto the opposite reception system is excluded. Thus, the undesired wave leaked to the opposite reception system can be given with isolation.

7. 发明专利

JPS6259484B2 失效
公开(公告)号：JPS6259484B2
公开(公告)日：1987-12-11
申请号：JP18004181
申请日：1981-11-10
申请人： FUJITSU LTD
发明人： UNNO ISAMU , OOSAWA ZENICHI , IZUMI AKIRA
IPC分类号： H03C3/22 , H03C7/02

8. 发明专利

JPS62269501A HYBRID CIRCUIT 失效
公开(公告)号：JPS62269501A
公开(公告)日：1987-11-24
申请号：JP11539886
申请日：1986-05-19
申请人： FUJITSU LTD
发明人： UNNO ISAMU
IPC分类号： H01P3/08 , H01P5/04 , H01P5/18
摘要： PURPOSE:To reduce the radiation loss, dielectric loss and variation in the performance by giving a difference of height between an input/output part and a coupling part of a main line and a sub line, supporting the input/output part to a metallic case mechanically and making the interval of the coupling parts adjastable externally. CONSTITUTION:A main line 10 of a modified Z-shape where a coupling part 103 of lambda/4 length and input/output parts 101, 102 on a plane in parallel with a plane including the coupling part and having a predetermined interval therewith are connected in opposite directions to each other so as to be nearly orthogonal near both ends of the coupling part in view of the plane, and a sub line 10' of the same shape as the main line 10 are formed, and the main line 10 and the sub line 10' are arranged so that the input/output parts 101, 102, 101' and 102' are symmetrical to the coupling part in opposing the coupling parts 103, 103' of both the lines at a prescribed interval in a space enclosed by a metallic case 12 and a cover 14, and the input/ output parts are supported mechanically by dielectric bases 6, 7, 8, 9 or the like provided to the cash and the cover. Coupling degree adjusting holes 15, 16 are provided to the cover 14. Through the constitution above. a dielectric substance used conventionally between the lines 10, 10' is not required and the degree of coupling is easily adjusted.

9. 发明专利

JPS6199423A Very high frequency band receiver 失效
标题翻译：非常高频带接收机
公开(公告)号：JPS6199423A
公开(公告)日：1986-05-17
申请号：JP21401784
申请日：1984-10-12
申请人： Fujitsu Ltd
发明人： UNNO ISAMU , NAKATANI TETSUJI , IKUTA HIDEKI
IPC分类号： H04B1/18
CPC分类号： H04B1/18
摘要： PURPOSE:To reduce the noise and reduce the nonlinear distortion by controlling a bias current or a bias voltage so that a noise factor is minimized to perform the amplifying operation when a reception power is lower than a prescribed level and a saturation output is maximized when the reception power is higher than the prescribed level. CONSTITUTION:The state where an FET is operated in the bias condition of a maxi mum saturation output is indicated by a short and long dash alternating line in the figure. The state when the FET is operated in the condition of a minimum noise factor is indicated by a solid line. That is, the bias is so switched that the FET is operated along the solid line in case of a smaller Pi because the noise factor NF is too high and is not optimum in this case in the state indicated by the short and long dash alternating line and DET is operated along the short and long dash alternat ing line in case of the large Pi. Po is Po1 when Pi is Pi1, and Po is Po3 when Pi is Pi2. Thus, since the magnitude of the AGC signal which makes the output amplitude constant of an intermediate frequency amplifying stage 9 with AGC is proportional to that of the input power Pi, the AGC signal from the amplifying stage 9 is applied to a bias voltage control circuit 11 to switch the solid line and the short and long dash alternating line.
摘要翻译：目的：通过控制偏置电流或偏置电压来降低噪声并减少非线性失真，使得当接收功率低于规定电平时，噪声系数最小化，以进行放大操作，并且当接收功率高于规定的水平。构成：在最大饱和输出的偏置条件下操作FET的状态由图中短短的长划线表示。在最小噪声系数条件下工作的状态由实线表示。也就是说，偏置被切换，使得在较小的Pi的情况下，FET沿着实线操作，因为噪声因子NF太高，并且在这种情况下在由短和长虚线交替线指示的状态下不是最佳的而在大的Pi的情况下，DET沿着短和长短划线交替运行。当Pi为Pi1时，Po为Po1，Pi为Pi2时，Po为Po3。因此，由于使AGC的中频放大级9的输出幅度恒定的AGC信号的幅度与输入功率Pi的幅度成正比，所以来自放大级9的AGC信号被施加到偏置电压控制电路 11切换实线和短长和短划线交替线。

10. 发明专利

JPS5859601A CONNECTING STRUCTURE OF MICROSTRIP TRANSMITTING LINE 失效
公开(公告)号：JPS5859601A
公开(公告)日：1983-04-08
申请号：JP15899281
申请日：1981-10-06
申请人： FUJITSU LTD
发明人： NISHIDA HARUKI , OOSAWA ZENICHI , UNNO ISAMU , SOGOU HIROYUKI
IPC分类号： H01P1/04 , H01P5/08
摘要： PURPOSE:To eliminate instability resulting from impacts and temperature changes due to the clearance between a lead of parts to be installed to the dielectric substrate and a line conductor at a location facing to the lead when the parts is fitted to the dielectric substrate, by previously removing the line conductor. CONSTITUTION:A conductor section of a lower microstrip transmitting line 8' at a location facing to a lead 6 of a transistor 4 is removed in advance. Therefore, no conductor exists at the location facing to the lead 6 on the surface of a substrate 3'. The lead 6 is connected with the microstrip transmitting line 8' with a gold ribbon 7 which is press-fixed thermally on them by bonding. Accordingly, no instability occurs in the electrical operation, even when the lead 6 is displaced under this condition.

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