专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2014179553A Etching method and etching device 审中-公开
标题翻译：蚀刻方法和蚀刻装置
公开(公告)号：JP2014179553A
公开(公告)日：2014-09-25
申请号：JP2013054117
申请日：2013-03-15
申请人： Nagoya Univ , 国立大学法人名古屋大学
发明人： TAJIMA SATOMI , HAYASHI TOSHIO , ISHIKAWA KENJI , HORI MASARU
IPC分类号： H01L21/302
摘要： PROBLEM TO BE SOLVED: To provide an etching method and an etching device capable of carrying out dry etching to Si crystal or the like by using relatively inexpensive and easily acquirable gas without using a plasma generation device.SOLUTION: An etching device 100 is configured to carry out dry etching to an Si member S1. The etching device 100 includes: a reaction chamber 150 for carrying out etching to the Si member S1; a first gas supply part 111 for supplying first gas containing Fgas to the reaction chamber 150; and a second gas supply part 112 for supplying second gas containing NO gas to the reaction chamber 150. Then, the inner pressure of the reaction chamber 150 is set within the range of 10 Pa or more and 10000 Pa or less, and the mixed gas of first gas and second gas is introduced to the Si member S1 to carry out etching.
摘要翻译：要解决的问题：提供一种能够在不使用等离子体产生装置的情况下通过使用相对便宜且易于获取的气体对Si晶体等进行干蚀刻的蚀刻方法和蚀刻装置。解决方案：蚀刻装置100被配置为对Si构件S1进行干蚀刻。蚀刻装置100包括：用于对Si构件S1进行蚀刻的反应室150; 用于向反应室150供给含有Fgas的第一气体的第一气体供给部111; 以及用于向反应室150供给含有NO气体的第二气体的第二气体供给部112.然后，反应室150的内部压力设定在10Pa以上且10000Pa以下的范围内，混合气体的第一气体和第二气体被引入到Si构件S1中以进行蚀刻。

2. 发明专利

JP2014045049A Manufacturing method and etching method of semiconductor device 有权
标题翻译：半导体器件的制造方法和蚀刻方法
公开(公告)号：JP2014045049A
公开(公告)日：2014-03-13
申请号：JP2012185977
申请日：2012-08-26
申请人： Nagoya Univ , 国立大学法人名古屋大学 , Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Nu Eco Engineering Kk , Nuエコ・エンジニアリング株式会社
发明人： HORI MASARU , SEKINE MAKOTO , ISHIKAWA KENJI , OZAWA TAKAHIRO , KANO HIROYUKI
IPC分类号： H01L21/3065 , H01L21/336 , H01L21/338 , H01L29/12 , H01L29/778 , H01L29/78 , H01L29/812
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method and an etching method of a semiconductor device, which can inhibit surface composition change and the occurrence of crystal fault in a group III nitride compound semiconductor.SOLUTION: A manufacturing method of a semiconductor device comprises: forming a buffer layer 120, a GaN layer 130 and an AlGaN layer 140 on a principal surface of a substrate 110; subsequently forming a source electrode S1 and a drain electrode D1; subsequently covering a part of the AlGaN layer 140, the source electrode S1 and the drain electrode D1 with a mask layer M1; and removing a part of a thickness of the AlGaN layer 140 by performing dry etching by using Clon the AlGaN layer 140 in a state of keeping a temperature of the substrate 110 within a range of not less than 200°C and not more than 600°C to form a recess.
摘要翻译：要解决的问题：提供可以抑制III族氮化物化合物半导体中的表面组成变化和晶体缺陷的发生的半导体器件的制造方法和蚀刻方法。解决方案：半导体器件的制造方法包括：在衬底110的主表面上形成缓冲层120，GaN层130和AlGaN层140; 随后形成源电极S1和漏电极D1; 随后用掩模层M1覆盖一部分AlGaN层140，源电极S1和漏电极D1; 并且通过在保持基板110的温度在不低于200℃且不大于600°的范围内的状态下使用AlGaN层140进行干蚀刻来去除AlGaN层140的一部分厚度 C形成凹部。

3. 发明专利

JP2013153995A Ovarian cancer treatment device 审中-公开
标题翻译： OVARIAN癌症治疗装置
公开(公告)号：JP2013153995A
公开(公告)日：2013-08-15
申请号：JP2012017483
申请日：2012-01-31
申请人： Nagoya Univ , 国立大学法人名古屋大学 , Nu Eco Engineering Kk , Nuエコ・エンジニアリング株式会社
发明人： HORI MASARU , KONDO HIROMOTO , TAKEDA KEIGO , TANAKA HIROMASA , YOSHIKAWA FUMITAKA , KAJIYAMA HIROAKI , NAKAMURA KAE , KANO HIROYUKI
IPC分类号： A61N1/44 , A61B17/42 , A61B18/00 , H05H1/24
摘要： PROBLEM TO BE SOLVED: To provide an ovarian cancer treatment device capable of terminating ovarian cancer cells while hardly affecting normal cells by using atmospheric pressure plasma.SOLUTION: An ovarian cancer treatment device 110 includes a pair of counter electrodes 2a and 2b, on whose opposing face concave parts (hollows) H are formed. Introducing argon gas into a housing 11 through a gas inlet 11i and applying a voltage between the electrodes 2a and 2b allow the ovarian cancer treatment device 110 to blow out plasma from a gas outlet 11o. The plasma density is not less than 1×10cmand not more than 1×10cm. Ovarian cancers are continuously irradiated with the plasma for a certain period.
摘要翻译：要解决的问题：提供能够终止卵巢癌细胞但不会通过使用大气压血浆几乎不影响正常细胞的卵巢癌治疗装置。解决方案：卵巢癌治疗装置110包括一对对置电极2a和2b，其对置形成面凹部（中空部）H。通过气体入口11i将氩气引入壳体11并在电极2a和2b之间施加电压允许卵巢癌治疗装置110从气体出口11o吹出等离子体。等离子体密度不小于1×10cm，不大于1×10cm。卵巢癌血浆持续照射一定时间。

4. 发明专利

JP2013058698A Manufacturing method of printed wiring board 有权
标题翻译：印刷线路板的制造方法
公开(公告)号：JP2013058698A
公开(公告)日：2013-03-28
申请号：JP2011197477
申请日：2011-09-09
申请人： Ibiden Co Ltd , イビデン株式会社 , Nagoya Univ , 国立大学法人名古屋大学
发明人： IWATA YOSHIYUKI , HORI MASARU , SAKAMOTO HAJIME
IPC分类号： H05K3/42 , H05H1/00 , H05H1/24 , H05K3/18 , H05K3/26
CPC分类号： H05K3/027 , H05K3/0035 , H05K3/0055 , H05K3/421 , H05K2203/095
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of an environment-conscious multilayer printed wiring board capable of forming a via conductor with high connection reliability by removing resin residue in a small diameter aperture for a via.SOLUTION: When performing atmospheric pressure plasma processing with high electron density by using a process gas mixed with a fluorovinyl ether-based gas having a double bond between two carbons and a fluoroalkyl ether group, F radicals, CF radicals, CF2 radicals and CF3 radicals for removing resin residue on the bottom of an aperture for a via conductor by chemical reaction are obtained abundantly with a low mixing ratio. Consequently, chemical removal progresses efficiently and the resin residue of via is removed by a synergetic effect with physical removal by particles in plasma.
摘要翻译：要解决的问题：提供一种能够通过去除用于通孔的小直径孔中的树脂残留物而形成具有高连接可靠性的通孔导体的环境意识的多层印刷线路板的制造方法。解决方案：通过使用与在两个碳和氟代烷基醚基团之间具有双键的氟乙烯基醚基气体混合的工艺气体进行高电子密度的大气压等离子体处理，F自由基，CF自由基，CF2基团和通过化学反应在通孔导体的孔的底部除去树脂残渣的CF 3基团以低的混合比大量获得。因此，通过物理除去等离子体中的颗粒的协同效应，有效地进行化学去除并且通孔的树脂残余物被除去。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2012103071A Evaluation method and evaluation device of organic ferroelectric material and method for manufacturing electronic device 审中-公开
标题翻译：有机电材料的评价方法和评价装置及制造电子装置的方法
公开(公告)号：JP2012103071A
公开(公告)日：2012-05-31
申请号：JP2010250901
申请日：2010-11-09
申请人： Nagoya Univ , 国立大学法人名古屋大学
发明人： HORI MASARU , ISHIKAWA KENJI
IPC分类号： G01N21/27 , G01N21/35 , G01N21/3563 , H01L51/05 , H01L51/30
摘要： PROBLEM TO BE SOLVED: To evaluate ferroelectricity without contacting an organic ferroelectric material.SOLUTION: Usually, upon forming a flexible electronic device with an organic ferroelectric material, ferroelectricity is evaluated after a terminal is provided and the electronic device is formed. Intensity of sum frequency light generated by radiating laser beams with different wavelengths such as visible light and infrared light is detected to evaluate the ferroelectricity without destructing or contacting the organic ferroelectric material. This can substantially reduce expenses for forming the electronic device using the organic ferroelectric material especially with a large area on which a large number of elements are integrated.
摘要翻译：要解决的问题：评估铁电性而不接触有机铁电材料。解决方案：通常，在用有机铁电材料形成柔性电子器件时，在提供端子并形成电子器件之后评估铁电性。检测通过辐射不同波长的可见光和红外光的激光束产生的和频强度，以评估铁电性而不破坏或接触有机铁电材料。这可以大大减少用于形成使用有机铁电材料的电子器件的费用，特别是在其上集成有大量元件的大面积上。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2012038568A Ion source 有权
标题翻译：离子源
公开(公告)号：JP2012038568A
公开(公告)日：2012-02-23
申请号：JP2010177459
申请日：2010-08-06
申请人： Emd:Kk , Katagiri Engineering:Kk , Nagoya Univ , 国立大学法人名古屋大学 , 株式会社イー・エム・ディー , 株式会社片桐エンジニアリング
发明人： SETSUHARA YUICHI , ISHIKAWA KENJI , HORI MASARU , EBE AKINORI , DEN SHOJI
IPC分类号： H01J27/16 , H01J37/08
摘要： PROBLEM TO BE SOLVED: To provide an ion source which can generate various ion species while suppressing variation in ion energy.SOLUTION: The ion source comprises a low inductance internal antenna 10, a dielectric container 11 which holds the low inductance internal antenna 10 internally, and a vacuum container 14 which holds the dielectric container 11 and a lead-out electrode 13 internally. Since induction coupling plasma is generated in the dielectric container 11, even ions of such a gas as exhibiting high corrosiveness to metal can be generated. Since a low inductance internal antenna 10 is used, fluctuation of plasma potential can be suppressed and ions can be extracted while suppressing variation in energy.
摘要翻译：要解决的问题：提供能够在抑制离子能量变化的同时产生各种离子物质的离子源。解决方案：离子源包括低电感内部天线10，内部保持低电感内部天线10的电介质容器11和在内部保持电介质容器11和引出电极13的真空容器14。由于在电介质容器11中产生感应耦合等离子体，所以能够产生对金属具有高腐蚀性的这种气体的离子。由于使用低电感内部天线10，因此可以抑制等离子体电位的波动，同时抑制能量的变化而提取离子。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2012014927A Reactive species supply device and processing apparatus for surface or th like 有权
标题翻译：反应物种供应装置和表面处理装置
公开(公告)号：JP2012014927A
公开(公告)日：2012-01-19
申请号：JP2010149525
申请日：2010-06-30
申请人： Fuji Mach Mfg Co Ltd , Nagoya Univ , Nu Eco Engineering Kk , Nuエコ・エンジニアリング株式会社 , 国立大学法人名古屋大学 , 富士機械製造株式会社
发明人： HORI MASARU , KANO HIROYUKI , MORI KAZUAKI , NAKANE NOBUYUKI , WATANABE TOMOHIRO , ISOZUMI JOJI
IPC分类号： H05H1/24 , B01J19/08 , B08B5/00
CPC分类号： B23H1/00 , H05H1/48 , H05H2001/485 , H05H2001/488 , H05H2245/123
摘要： PROBLEM TO BE SOLVED: To make a discharge unlikely to be generated between an electrode and a work.SOLUTION: An individual passage 81B as a component of a plasma outflow passage provided between a discharge space 42B and a plasma output port 16 has a main passage composed of an X part 81BX, a part 81BZO closer to the discharge space than a connection part M of an X part 81BXX of a Z part 81BZ, an X part 81BXX, a diffuser 82B, a slit 86, etc. and also has a branch passage composed of a part 81BZP on the opposite side from the discharge space with respect to the connection part M of a Z-directional part 81BZ. A ground plate 90 is provided blocking the branch passage 81BZP. The branch passage 81BZP and a part 81BZO of the main passage are positioned on the same straight line, so a discharge is generated with the ground plate 90 and made unlikely to be generated with the work W.
摘要翻译：要解决的问题：在电极和工件之间不可能产生放电。解决方案：设置在放电空间42B和等离子体输出口16之间的作为等离子体流出通道的分量的单独通道81B具有由X部分81BX，更靠近放电空间的部分81BZO组成的主通道， Z部81BZ的X部81BXX的连接部M，X部81BXX，扩散部82B，狭缝86等，并且还具有由与放电空间相反的一侧的部分81BZP构成的分支通路，到Z方向部81BZ的连接部M. 设置有接地板90，其阻挡分支通道81BZP。主通道的分支通道81BZP和部分81BZO位于相同的直线上，因此与接地板90产生放电，并且不太可能由工件W产生。版权所有（C）2012 ，JPO＆INPIT

8. 发明专利

JP2012013931A Planar waveguide 审中-公开
标题翻译：平面波形
公开(公告)号：JP2012013931A
公开(公告)日：2012-01-19
申请号：JP2010150030
申请日：2010-06-30
申请人： Nagoya Univ , 国立大学法人名古屋大学
发明人： EBIZUKA NOBORU , ISHIKAWA KENJI , KONDO HIROKI , HORI MASARU
IPC分类号： G02B6/122
摘要： PROBLEM TO BE SOLVED: To provide a planar waveguide having a small-sized hybrid lens having a large NA and a little loss.SOLUTION: This planar waveguide includes: a clad layer; a core layer superposed on the surface side of the clad layer and having a refractive index higher than that of the clad layer; and a hybrid lens section formed on the surface or the interior of the core layer, having a refractive index higher than that of the clad layer, and having a different refractive index from that of the core layer. The hybrid lens section of this planar waveguide includes: a geometric grating part, which is a diffractive lens, or a dioptric lens part, which is symmetric about an optical axis and has a substantially serrate shape whose intervals become narrower as it separates farther from the optical axis; and a VP grating part, which is a diffractive lens, provided distant from the optical axis with respect to the geometric grating part or the dioptric lens part, and whose intervals become narrower as it separates farther from the optical axis.
摘要翻译：要解决的问题：提供具有NA大且少量损失的小型混合透镜的平面波导。解决方案：该平面波导包括：覆层; 芯层，叠层在覆盖层的表面侧，折射率高于覆盖层的折射率; 以及形成在芯层的表面或内部的折射率高于包层的折射率并且具有与芯层的折射率不同的折射率的混合透镜部。这种平面波导的混合透镜部分包括：作为衍射透镜的几何光栅部分或折射透镜部分，其与光轴对称，并且具有基本上锯齿形状，其间隔变得更窄，因为其与光轴; 以及作为衍射透镜的VP光栅部分，其相对于几何光栅部分或屈光透镜部分远离光轴，并且随着与光轴分离的间隔变窄，其间隔变窄。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2012013526A Spectroscope 审中-公开
标题翻译：分光镜
公开(公告)号：JP2012013526A
公开(公告)日：2012-01-19
申请号：JP2010150029
申请日：2010-06-30
申请人： Nagoya Univ , 国立大学法人名古屋大学
发明人： EBIZUKA NOBORU , HORI MASARU
IPC分类号： G01J3/14 , G01J3/18 , G02B13/00
摘要： PROBLEM TO BE SOLVED: To provide a spectroscope to be used in a vacuum ultraviolet ray range.SOLUTION: In the spectroscope including a slit 40, a first achromatic lens 20, a grism 10, a second achromatic lens 30 and a detector 50, the first achromatic lens 20, the grism 10 and the second achromatic lens 30 are selected and formed by LiF, MgF2. The first achromatic lens 20 includes a first refractive lens 21 and a first diffractive lens 22 including a plurality of binary type diffractive lattices. The second achromatic lens 30 includes a second refractive lens 32 and a second diffractive lens 32 including a plurality of binary type diffractive lattices. The grism 10 is installed in between the first achromatic lens 20 and the second achromatic lens 30 and includes a prism 11 and diffractive lattices 12 having a plurality of binary type diffractive lattices. A mean square deviation value for the surface roughness of the binary type diffractive lattices of the first diffractive lens 22, the binary type diffractive lattices of the second diffractive lens 32 and the binary type diffractive lattices of the diffractive lattices of the grism 10 are 5 nm or less.
摘要翻译：要解决的问题：提供一种用于真空紫外线范围的分光镜。
解决方案：在包括狭缝40，第一消色差透镜20，棱镜10，第二消色差透镜30和检测器50的分光器中，选择第一消色差透镜20，棱镜10和第二消色差透镜30 并由LiF，MgF 2形成。第一消色差透镜20包括第一折射透镜21和包括多个二进制衍射格栅的第一衍射透镜22。第二消色差透镜30包括第二折射透镜32和包括多个二进制衍射栅格的第二衍射透镜32。棱镜10安装在第一消色差透镜20和第二消色差透镜30之间，并且包括棱镜11和具有多个二进制衍射晶格的衍射光栅12。第一衍射透镜22的二进制衍射栅格的表面粗糙度，第二衍射透镜32的二进制衍射栅格和棱镜10的衍射栅格的二进制衍射栅格的均方差值为5nm 或更少。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2011171251A Multi-micro hollow cathode light source and atomic absorption spectrometer 有权
标题翻译：多微型中空灯光源和原子吸收光谱仪
公开(公告)号：JP2011171251A
公开(公告)日：2011-09-01
申请号：JP2010036315
申请日：2010-02-22
申请人： Katagiri Engineering:Kk , Meijo Univ , Nagoya Univ , Nu Eco Engineering Kk , Nuエコ・エンジニアリング株式会社 , 国立大学法人名古屋大学 , 学校法人名城大学 , 株式会社片桐エンジニアリング
发明人： HORI MASARU , ITO AKIFUMI , OTA TAKAYUKI , KANO HIROYUKI , YAMAKAWA KOJI
IPC分类号： H01J61/68 , G01N21/31
CPC分类号： H01J65/046 , G01N21/3103 , H05H1/2406 , H05H2001/2412
摘要： PROBLEM TO BE SOLVED: To provide a multi-micro hollow cathode light source wherein a light source is one point light source. SOLUTION: The multi-micro hollow cathode light source includes a cathode plate 11, an insulating plate 12, an anode plate 13, and a metal piece 14. The insulating plate 12 is arranged sandwiched between the cathode plate 11 and the anode plate 13. The cathode plate 11 is made of a copper. Holes 15a, 15b, and 15c are respectively arranged at the centers of the cathode plate 11, the insulating plate 12, and the anode plate 13, and form a hole 15 wherein a series of three holes pass through. Four linear grooves 16, extending at a cross-shape centered around the hole 15a and continuing to the hole around the hole 15a, are arranged on the cathode plate 11, as shown in Fig.3. The groove 16 passes through the cathode plate 11. Four metal pieces 14 where respective materials that differ are respectively inserted and embedded in the four grooves 16. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种多微孔中空阴极光源，其中光源是一点光源。解决方案：多微孔中空阴极光源包括阴极板11，绝缘板12，阳极板13和金属片14.绝缘板12被布置在阴极板11和阳极之间阴极板11由铜制成。孔15a，15b和15c分别设置在阴极板11，绝缘板12和阳极板13的中心，并形成一系列三个孔通过的孔15。如图3所示，在阴极板11上配置四个直线状的槽16，其以围绕孔15a为中心且与孔15a周围的孔连续的交叉形状延伸。凹槽16穿过阴极板11.四个金属片14分别插入并嵌入四个凹槽16中。各种不同材料的金属片14分别是：（C）2011，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式