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1. 发明授权

EP2733239B1 SIC SINGLE CRYSTAL AND MANUFACTURING PROCESS THEREFOR 有权
公开(公告)号：EP2733239B1
公开(公告)日：2021-05-12
申请号：EP11868866.2
申请日：2011-08-02
发明人： DANNO, Katsunori
IPC分类号： C30B19/04 , C30B19/12 , C30B29/36 , C30B9/06

2. 发明授权

EP3045571B1 METHOD FOR PRODUCING SIC SINGLE CRYSTAL 有权
公开(公告)号：EP3045571B1
公开(公告)日：2019-07-31
申请号：EP14843843.5
申请日：2014-09-01
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： DANNO, Katsunori
IPC分类号： C30B29/36 , C30B19/12 , C30B19/04

3. 发明公开

EP3388560A1 METHOD FOR PREPARING SIC SINGLE CRYSTAL 有权转让
公开(公告)号：EP3388560A1
公开(公告)日：2018-10-17
申请号：EP18165604.2
申请日：2018-04-04
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： SHINYA, Naofumi , HAMAGUCHI, Yu , YAMAGATA, Norio , MINOWA, Takehisa
IPC分类号： C30B9/06 , C30B17/00 , C30B19/04 , C30B19/12 , C30B29/36
CPC分类号： C30B1/02 , C30B9/06 , C30B19/04 , C30B19/12 , C30B29/36 , C30B33/02
摘要： A SiC single crystal is prepared by the solution process of placing a seed crystal in contact with a Si-C solution in a crucible and letting a SiC single crystal to grow from the seed crystal. The method includes the first growth step of conducting crystal growth using (0001) or (000-1) plane of a SiC single crystal of which the seed crystal is composed, as the growth surface, and the second growth step of conducting crystal growth using (1-100) or (11-20) plane of a SiC single crystal resulting from the first growth step as the growth surface. A SiC single crystal of high homogeneity and quality is obtained, which is reduced in threading screw dislocations, threading edge dislocations, basal plane dislocations, micropipes, and stacking faults.

4. 发明授权

EP2657375B1 SEED MATERIAL FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE, AND METHOD FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE 有权
公开(公告)号：EP2657375B1
公开(公告)日：2018-08-08
申请号：EP11850722.7
申请日：2011-06-29
申请人： Toyo Tanso Co., Ltd.
发明人： TORIMI, Satoshi , NOGAMI, Satoru , MATSUMOTO, Tsuyoshi
IPC分类号： C30B29/36 , C30B19/12 , C30B28/14
CPC分类号： C30B19/12 , C30B28/14 , C30B29/36 , Y10T428/26
摘要： Provided is an inexpensive seed material for liquid phase epitaxial growth of silicon carbide. A seed material 12 for liquid phase epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon X-ray diffraction of the surface layer thereof, a first-order diffraction peak corresponding to a (111) crystal plane is observed as a diffraction peak corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph but no other first-order diffraction peak having a diffraction intensity of 10% or more of the diffraction intensity of the first-order diffraction peak corresponding to the (111) crystal plane is observed.

5. 发明授权

EP2690205B1 METHOD FOR PRODUCING SIC SINGLE CRYSTALS AND PRODUCTION DEVICE 失效转让
标题翻译：制造SIC单晶的方法和生产装置
公开(公告)号：EP2690205B1
公开(公告)日：2018-04-11
申请号：EP11861383.5
申请日：2011-07-27
申请人： Toyota Jidosha Kabushiki Kaisha
发明人： DAIKOKU, Hironori , KAMEI, Kazuhito
IPC分类号： C30B17/00 , C30B19/04 , C30B19/06 , C30B19/12 , C30B29/36
CPC分类号： C30B15/22 , C30B17/00 , C30B19/04 , C30B19/061 , C30B19/12 , C30B29/36 , Y10T117/1032
摘要： Provided is a method for producing SiC single crystals while maintaining a temperature gradient such that the temperature decreases from within an Si solution inside a graphite crucible toward the solution surface, with the SiC seed crystals that have contacted the solution surface serving as the starting point for crystal seed growth, wherein when the crystal growth surface of the SiC seed crystals, which serves as the starting point for SiC single crystal growth, contacts the solution surface, the height by which the solution rises to the side of the SiC seed crystals is within the range where the SiC single crystals that have grown from the crystal growth surface and the SiC single crystals that have grown from the side grow as one SiC single crystal unit. Also provided is a device for producing an SiC single crystal comprising a graphite crucible, a heating device for heating and melting base materials in the crucible to form a base material solution and maintaining a temperature gradient required for growth of SiC single crystal, a support rod which holds a SiC seed crystal at its bottom end, and a holding structure which maintains the holding by the support rod so that a height by which the solution rises to the side of the SiC seed crystal is within a range where the SiC single crystal that have grown from the crystal growth surface and the SiC single crystal that have grown from the side grow as one SiC single crystal unit.

6. 发明公开

EP3191627A1 PROCESS FOR GROWING MULTI-LAYER NANO-HETERO-EPITAXIAL STRUCTURES WITH ARRAYS OF SEMICONDUCTOR QUANTUM DOTS AND SEMICONDUCTOR MATERIAL PRODUCED THROUGH SUCH PROCESS 审中-公开
标题翻译：生长具有半导体量子点阵列和半导体材料的多层纳米非晶 - 外延结构的工艺
公开(公告)号：EP3191627A1
公开(公告)日：2017-07-19
申请号：EP15791775.8
申请日：2015-09-07
申请人： Italia Syntesalloys S.p.A.
发明人： KONONOV, Alexandr
IPC分类号： C30B29/42 , C30B29/44 , C30B19/08 , C30B19/10 , C30B19/12 , C30B29/08
CPC分类号： C30B29/60 , C30B19/08
摘要： A process is described for growing multi-layer nano-hetero-epitaxial semiconductor structures with arrays of semiconductor quantum dots, obtained from the metal-semiconductor structural phase transition. A semiconductor material produced through such process is also described.
摘要翻译：描述了用于从具有金属 - 半导体结构相变的半导体量子点阵列生长多层纳米异质外延半导体结构的过程。还描述了通过这种工艺制造的半导体材料。

7. 发明公开

EP3181737A1 ALUMINA SUBSTRATE 审中-实审
标题翻译：氧化铝衬底
公开(公告)号：EP3181737A1
公开(公告)日：2017-06-21
申请号：EP15832383.2
申请日：2015-08-06
申请人： TDK Corporation
发明人： YAMASAWA Kazuhito , OHIDO Atsushi , KAWASAKI Katsumi
IPC分类号： C30B29/38 , C30B19/12 , C30B25/18 , H01L21/205
CPC分类号： C30B29/403 , C30B1/02 , C30B1/10 , C30B5/02 , C30B9/12 , C30B19/02 , C30B19/08 , C30B19/12 , C30B25/02 , C30B29/20 , H01L21/0242 , H01L21/02491 , H01L21/02499 , H01L21/02502 , H01L21/0254 , H01L21/02628 , H01L21/205
摘要： The purposes of the present invention are: to provide an alumina substrate material that an AlN crystal with a higher quality could be produced by it when aluminum nitride (AlN) crystals or the like are grown on an alumina substrate; to provide an alumina substrate formed with an AlN layer with decreased warping; and to provide a substrate material that, the AlN crystal can be promoted to spontaneously peeled and turn to be independent crystal by it, if excessive stress due to unavoidable lattice mismatching is applied, when the substrate material is used as the seed crystal. By an AlN layer being formed on a surface of the alumina substrate and a rare earth elements-containing layer and/or rare earth elements-containing regions being formed in the interior of the AlN layer or in the interface between the AlN layer and the alumina substrate, the stress on the AlN layer can be alleviated, and the warping thereof can be decreased. Moreover, if AlN crystals are grown by using such a substrate, the grown crystals can be peeled spontaneously to be taken out as an independent crystal.
摘要翻译：本发明的目的是：提供一种氧化铝衬底材料，当在氧化铝衬底上生长氮化铝（AlN）晶体等时，可以通过它生产具有更高品质的AlN晶体; 提供形成有减少翘曲的AlN层的氧化铝基板; 并且当基底材料用作籽晶时，如果施加由于不可避免的晶格失配引起的过度应力，则提供可以促进AlN晶体自发地剥离并转变为独立晶体的衬底材料。通过在氧化铝基体的表面上形成AlN层，并且在AlN层的内部或在AlN层与氧化铝之间的界面中形成含稀土元素的层和/或含稀土元素的区域衬底上，可以减轻AlN层上的应力，并且可以减小其翘曲。而且，如果通过使用这种衬底生长AlN晶体，则生长的晶体可以自发地剥离以作为独立的晶体被取出。

8. 发明公开

EP3181735A1 GALLIUM NITRIDE SELF-SUPPORTING SUBSTRATE, LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：拉斯维加斯
公开(公告)号：EP3181735A1
公开(公告)日：2017-06-21
申请号：EP16204466.3
申请日：2014-11-27
申请人： NGK Insulators, Ltd.
发明人： WATANABE, Morimichi , YOSHIKAWA, Jun , NANATAKI, Tsutomu , IMAI, Katsuhiro , SUGIYAMA, Tomohiko , YOSHINO, Takashi , TAKEUCHI, Yukihisa , SATO, Kei
IPC分类号： C30B25/18 , C30B28/04 , C30B29/40 , C30B29/60 , C30B9/12 , C30B19/02 , C30B19/12 , C30B25/20
CPC分类号： H01L33/18 , C30B9/00 , C30B9/12 , C30B19/02 , C30B19/12 , C30B25/18 , C30B25/20 , C30B28/04 , C30B29/406 , C30B29/605 , H01L33/0025 , H01L33/0075 , H01L33/06 , H01L33/16 , H01L33/32
摘要： Provided is a self-supporting gallium nitride substrate useful as an alternative material for a gallium nitride single crystal substrate, which is inexpensive and also suitable for having a large area. This substrate is composed of a plate composed of gallium nitride-based single crystal grains, wherein the plate has a single crystal structure in the approximately normal direction. This substrate can be manufactured by a method comprising providing an oriented polycrystalline sintered body; forming a seed crystal layer composed of gallium nitride on the sintered body so that the seed crystal layer has crystal orientation mostly in conformity with the crystal orientation of the sintered body; forming a layer with a thickness of 20 µm or greater composed of gallium nitride-based crystals on the seed crystal layer so that the layer has crystal orientation mostly in conformity with crystal orientation of the seed crystal layer; and removing the sintered body.
摘要翻译：提供了一种自支撑氮化镓衬底，其可用作氮化镓单晶衬底的替代材料，其便宜并且也适合于具有大的面积。该基板由氮化镓系单晶粒构成的板构成，其中，在大致正方向上具有单晶结构。该基板可以通过包括提供取向多晶烧结体的方法制造; 在所述烧结体上形成由氮化镓构成的籽晶层，使得所述晶种层的结晶取向主要与所述烧结体的晶体取向一致; 在籽晶层上形成由氮化镓系晶体构成的厚度为20μm以上的层，使得该层的结晶取向主要与晶种层的晶体取向一致; 并除去烧结体。

9. 发明授权

EP2647742B1 BISMUTH-SUBSTITUTED RARE EARTH IRON GARNET CRYSTAL FILM AND OPTICAL ISOLATOR 有权
标题翻译： WISMUT置换稀土铁石榴石晶体薄膜和光隔
公开(公告)号：EP2647742B1
公开(公告)日：2017-01-18
申请号：EP11845707.6
申请日：2011-11-10
申请人： Sumitomo Metal Mining Co., Ltd.
发明人： OOSUMI, Shuuji , NOMI, Yasutaka , NAKAMURA, Nobuo , HATANAKA, Hiroshi , KAJIGAYA, Tomio
IPC分类号： C30B29/28 , C30B19/12 , G02B5/30 , G02B27/28 , G02F1/09
CPC分类号： C30B29/34 , C30B19/12 , C30B29/28 , G02B1/02 , G02F1/0036 , G02F1/093

10. 发明公开

EP3026146A4 METHOD FOR PRODUCING SiC SUBSTRATES 审中-公开
标题翻译：用于生产SiC衬底
公开(公告)号：EP3026146A4
公开(公告)日：2016-08-31
申请号：EP14830083
申请日：2014-07-17
申请人： TOYOTA MOTOR CO LTD
发明人： DANNO KATSUNORI
IPC分类号： C30B29/36 , C30B17/00 , C30B19/04 , C30B19/12 , C30B23/02 , C30B25/02
CPC分类号： C30B19/04 , C30B17/00 , C30B19/12 , C30B23/02 , C30B25/02 , C30B29/36
摘要： A method for producing a SiC substrate with an epitaxial layer, which can prevent inventory of wafers from unduly increasing and wasteful production, is provided. This is achieved by a method for producing a SiC substrate with an epitaxial layer one at a time, the method comprising growing an epitaxial layer and growing a SiC substrate on a seed crystal substrate, and the method further comprising removing the obtained SiC substrate with the epitaxial layer from the seed crystal substrate.

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