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1. 发明授权

EP2857562B1 SIC SINGLE-CRYSTAL INGOT AND PRODUCTION METHOD FOR SAME 失效
标题翻译： SIC单晶锭及其生产方法
公开(公告)号：EP2857562B1
公开(公告)日：2017-09-27
申请号：EP13800683.8
申请日：2013-04-16
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： SHIRAI, Takayuki , DANNO, Katsunori
IPC分类号： C30B9/06 , C30B19/04 , C30B29/36 , C30B17/00 , C30B19/10 , C30B9/10 , C30B19/06 , C30B19/12
CPC分类号： C30B19/062 , C30B9/00 , C30B9/06 , C30B9/10 , C30B17/00 , C30B19/02 , C30B19/04 , C30B19/08 , C30B19/10 , C30B19/12 , C30B29/36
摘要： Provided are an SiC single-crystal ingot containing an SiC single crystal having a low threading dislocation density and low resisitivity; an SiC single crystal; and a production method for the SiC single crystal. The SiC single crystal ingot contains a seed crystal and a grown crystal grown by a solution process in which the seed crystal is the base point, the grown crystal of the SiC single crystal ingot containing a nitrogen density gradient layer in which the nitrogen content increases in the direction of growth from the seed crystal.
摘要翻译：提供一种包含穿透位错密度低且电阻率低的SiC单晶的SiC单晶锭; SiC单晶; 以及SiC单晶的制造方法。 SiC单晶锭包含晶种和通过以籽晶为基点的溶液工艺生长的生长晶体，含有氮含量增加的氮密度梯度层的SiC单晶锭的生长晶体从晶种生长的方向。

2. 发明公开

EP3051009A4 SiC MONOCRYSTAL AND METHOD FOR PRODUCING SAME 有权转让
标题翻译： SiC单晶和方法及其生产
公开(公告)号：EP3051009A4
公开(公告)日：2016-10-05
申请号：EP14847080
申请日：2014-08-27
申请人： TOYOTA MOTOR CO LTD , NIPPON STEEL & SUMITOMO METAL CORP
发明人： DAIKOKU HIRONORI , KADO MOTOHISA , KAMEI KAZUHITO , KUSUNOKI KAZUHIKO
IPC分类号： C30B29/36 , C30B9/10 , C30B19/02 , C30B19/06 , C30B19/08 , C30B19/10 , C30B19/12
CPC分类号： C30B19/10 , C30B9/10 , C30B19/02 , C30B19/062 , C30B19/068 , C30B19/08 , C30B19/12 , C30B29/36 , H01L21/02529 , H01L21/02598 , H01L21/02609 , H01L21/02628 , H01L29/045 , H01L29/1608

3. 发明公开

EP3051009A1 SiC MONOCRYSTAL AND METHOD FOR PRODUCING SAME 有权转让
标题翻译： SIC-EINKRISTALL UND VERFAHREN ZUR HERSTELLUNG DAVON
公开(公告)号：EP3051009A1
公开(公告)日：2016-08-03
申请号：EP14847080.0
申请日：2014-08-27
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA , Nippon Steel & Sumitomo Metal Corporation
发明人： DAIKOKU, Hironori , KADO, Motohisa , KAMEI, Kazuhito , KUSUNOKI, Kazuhiko
IPC分类号： C30B29/36 , C30B19/10
CPC分类号： C30B19/10 , C30B9/10 , C30B19/02 , C30B19/062 , C30B19/068 , C30B19/08 , C30B19/12 , C30B29/36 , H01L21/02529 , H01L21/02598 , H01L21/02609 , H01L21/02628 , H01L29/045 , H01L29/1608
摘要： Provided is a SiC single crystal that has a large growth thickness and contains no inclusions. A SiC single crystal grown by a solution process, wherein the total length M of the outer peripheral section formed by the {1-100} faces on the {0001} growth surface of the SiC single crystal, and the length P of the outer periphery of the growth surface of the SiC single crystal, satisfy the relationship M/P ≤ 0.70, and the length in the growth direction of the SiC single crystal is 2 mm or greater.
摘要翻译：提供具有大生长厚度且不含夹杂物的SiC单晶。通过溶液法生长的SiC单晶，其中由{1-100}形成的外周部分的总长度M面在SiC单晶的{0001}生长表面上，外周的长度P 的SiC单晶的生长面，满足M / P‰0.70的关系，SiC单晶生长方向的长度为2mm以上。

4. 发明公开

EP2995704A2 SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME 审中-公开
标题翻译： SIC单晶及其制造方法
公开(公告)号：EP2995704A2
公开(公告)日：2016-03-16
申请号：EP15183263.1
申请日：2015-09-01
申请人： Toyota Jidosha Kabushiki Kaisha
发明人： SHIRAI, Takayuki
IPC分类号： C30B9/06 , C30B19/04 , C30B19/10 , C30B29/36
CPC分类号： C30B19/10 , C30B9/06 , C30B19/02 , C30B19/04 , C30B19/062 , C30B19/067 , C30B19/08 , C30B19/106 , C30B19/12 , C30B29/36 , H01L29/04 , H01L29/1608
摘要： A low-resistance p-type SiC single crystal containing no inclusions is provided. This is achieved by a method for producing a SiC single crystal wherein a SiC seed crystal substrate 14 is contacted with a Si-C solution 24 having a temperature gradient in which the temperature falls from the interior toward the surface, to grow a SiC single crystal, and wherein the method comprises: using, as the Si-C solution, a Si-C solution containing Si, Cr and Al, wherein the Al content is 3 at% or greater based on the total of Si, Cr and Al, and making the temperature gradient y (°C/cm) in the surface region of the Si-C solution 24 satisfy the following formula (1): y ≥ 0.15789x + 21.52632 (1) wherein x represents the Al content (at%) of the Si-C solution.
摘要翻译：提供不含夹杂物的低电阻p型SiC单晶。这通过用于制造SiC单晶的方法来实现，其中SiC晶种衬底14与具有温度从内部朝向表面下降的温度梯度的Si-C溶液24接触以生长SiC单晶并且其中所述方法包括：使用包含Si，Cr和Al的Si-C溶液作为Si-C溶液，其中基于Si，Cr和Al的总量计，Al含量为3原子％或更高;以及使得Si-C溶液24的表面区域中的温度梯度y（℃/ cm）满足下式（1）：y≥0.15789x+ 21.52632（1）其中x表示Al含量（at％） Si-C解决方案。

5. 发明授权

EP0525617B1 Liquid-phase growth process of compound semiconductor 失效
标题翻译：化合物半导体的液相生长的方法
公开(公告)号：EP0525617B1
公开(公告)日：2001-01-31
申请号：EP92112538.1
申请日：1992-07-22
申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED
发明人： Yanagisawa, Munehisa , Nakamura, Akio , Otaki, Toshio , Higuchi, Susumu
IPC分类号： H01L21/208 , C30B19/10 , C30B19/00
CPC分类号： C30B19/10 , C30B7/005 , C30B19/04 , C30B29/44 , Y10S117/906
摘要： A liquid-phase growth process of a compound semiconductor which is capable of effectively controlling the generation of a surface defect and improve the product quality and production yield is disclosed in which before the start of liquid-phase growth, a substrate and a solution are held in a 100% hydrogen atmosphere or a mixed gas atmosphere consisting of more than 80% of hydrogen and the rest of an inert gas, and immediately before the start of the liquid-phase growth, the atmosphere is changed to a mixed gas atmosphere consisting of not more than 60% of hydrogen and the rest of the inert gas.

6. 发明公开

EP0160403A3 Growing high resistivity quaternary material by liquid phase epitaxy 失效
标题翻译：通过液相生长高电阻季度材料
公开(公告)号：EP0160403A3
公开(公告)日：1988-03-16
申请号：EP85302239
申请日：1985-04-01
申请人： STC PLC
发明人： Greene, Peter David
IPC分类号： H01L21/208 , C30B19/02 , H01L29/207 , C30B19/10
CPC分类号： H01L21/02461 , H01L21/02543 , H01L21/02576 , H01L21/02581 , H01L21/02625 , H01L29/207
摘要： Iron has too low a solubility to be a convenient dopant for producing high resistivity blocking material by liquid phase epitaxy in the construction of InP and InGaAsP semiconductor devices. Manganese is used in its stead in conjunction with a donor such as germanium to act as partial compensation in view of the fact that the acceptor level of manganese in InP is not as deep as that of iron.
摘要翻译：铁具有太低的溶解度，不能成为用于在InP和InGaAsP半导体器件的结构中通过液相外延生产高电阻率阻挡材料的方便的掺杂剂。考虑到InP中的锰的受体含量不如铁的那么高，因此锰与锗等捐助者一起用于部分补偿。

7. 发明公开

EP0096922A1 Method of preparing a plurality of castings having a predetermined composition 有权
标题翻译： Verfahren zur Herstellung von mehreren Giessereierzeugnissen mit einer vorherbestimmten Zusammensetzung。
公开(公告)号：EP0096922A1
公开(公告)日：1983-12-28
申请号：EP83200800.7
申请日：1983-06-03
申请人： PHILIPS ELECTRONICS UK LIMITED , Philips Electronics N.V.
发明人： Brice, John Chadwick , Brough, Colin Richard
IPC分类号： C30B19/04 , C30B29/40 , C30B29/48 , C30B19/10
CPC分类号： C30B29/40 , C30B19/04 , C30B19/106 , C30B29/48
摘要： A method of simultaneously preparing a plurality of castings of a solution of an element or compound A in a solvent B which is an element and/or a compound, which solution is saturated at a temperature T s . A problem in liquid epitaxy growth processes is the simple preparation of growth charges which are of sufficiently reproducible composition and size to produce epitaxial layers of reproducible composition and thickness. A melt 12 consisting of B, or of B together with at least one of the constituents of A, or of a solution of A in B which is unsaturated at T s is prepared in a through 5 of a boat body of a liquid-tight boat assembly 1. An equilibrium is established at T_ 2 between the melt 12 and a solid body 13 which is an excess of any constituent in which the melt 12 is deficient with respect to the saturated solution, so as to form a saturated solution. The saturated solution is transferred into a plurality of moulds 9 in which this solution is allowed to solidify to form the castings. The solid body 13 is contained in a solid-retaining portion 6 of the trough 5, which portion 6 is separated from the remainder of the trough 5 by an apertured partition 8.
摘要翻译：一种同时制备元素或化合物A在作为元素和/或化合物的溶剂B中的溶液的多个铸件的方法，该溶液在温度Ts下饱和。液体外延生长过程中的一个问题是生产电荷的简单制备，其具有足够可重复的组成和尺寸以产生具有可重复组成和厚度的外延层。由B或B组成的熔体12与A的成分中的至少一种或在B中不饱和的A的A溶液一起制备在液密船的船体的通孔5中组件1.在熔体12和固体13之间的T-2处建立了平衡，该固体体是熔体12相对于饱和溶液不足的任何组分的过量，以形成饱和溶液。将饱和溶液转移到多个模具9中，其中允许该溶液固化以形成铸件。固体13容纳在槽5的固体保持部分6中，该部分6通过有孔分隔件8与槽5的其余部分分离。

8. 发明公开

EP0010920A1 Liquid phase epitaxial process 失效
标题翻译： Flüssigphasen-Epitaxieverfahren。
公开(公告)号：EP0010920A1
公开(公告)日：1980-05-14
申请号：EP79302313.6
申请日：1979-10-24
申请人： SPERRY CORPORATION
发明人： Nelson, Gary Lee , Harvey, William Albert
IPC分类号： C30B19/10 , C30B29/28 , G02F1/00
CPC分类号： C30B19/10 , C30B19/02 , C30B19/062 , C30B29/28
摘要： In a liquid phase epitaxial process for producing magnetic garnet crystals, primary melt residues adhering to a magnetic garnet crystal (4) are removed by immersing the crystal (2, 4) subsequent to growth in a rinse melt at or near the growth temperature of the primary melt. The rinse melt has a saturation to nucleation temperature range overlapping that of the primary melt and encompassing its growth temperature, has a solvent different from that of the primary melt and saturated or super-saturated with respect to the primary melt's solute, and has no undesirable adhesion properties of its own.
The rinse melt enables residues of bismuth containing primary melts to be removed. Bismuth containing primary melts are used to improve the properties of garnet crystal structures (2, 4, 6, 8) used for magneto-optic light deflectors.
摘要翻译：在用于制备磁性石榴石晶体的液相外延方法中，通过在晶体（2,4）的生长温度或接近生长温度之后将晶体（2,4）浸渍在漂洗熔体中生长后，去除附着在磁性石榴石晶体（4）上的初级熔融残余物初级熔融。冲洗熔体具有与初级熔体重叠的成核温度范围的饱和度并且包含其生长温度，具有与初级熔体不同的溶剂并且相对于初级熔体的溶质为饱和或过饱和，并且没有不期望的粘附性自身。 ...冲洗熔融物使含有熔融物的铋的残留物被去除。含有初级熔体的铋用于改善用于磁光偏转器的石榴石晶体结构（2,4,6,8）的性质。

9. 发明授权

EP2889397B1 SIC SINGLE CRYSTAL PRODUCING METHOD 有权
公开(公告)号：EP2889397B1
公开(公告)日：2019-04-03
申请号：EP13832154.2
申请日：2013-08-26
申请人： National University Corporation Nagoya University
发明人： UJIHARA, Toru , HARADA, Shunta , SEKI, Kazuaki , ZHU, Can , NAGAOKA, Mitsuya
IPC分类号： C30B19/10 , C30B29/36 , C30B17/00 , C30B9/06 , C30B19/04 , C30B19/06 , C30B29/06 , C30B29/20

10. 发明公开

EP3191627A1 PROCESS FOR GROWING MULTI-LAYER NANO-HETERO-EPITAXIAL STRUCTURES WITH ARRAYS OF SEMICONDUCTOR QUANTUM DOTS AND SEMICONDUCTOR MATERIAL PRODUCED THROUGH SUCH PROCESS 审中-公开
标题翻译：生长具有半导体量子点阵列和半导体材料的多层纳米非晶 - 外延结构的工艺
公开(公告)号：EP3191627A1
公开(公告)日：2017-07-19
申请号：EP15791775.8
申请日：2015-09-07
申请人： Italia Syntesalloys S.p.A.
发明人： KONONOV, Alexandr
IPC分类号： C30B29/42 , C30B29/44 , C30B19/08 , C30B19/10 , C30B19/12 , C30B29/08
CPC分类号： C30B29/60 , C30B19/08
摘要： A process is described for growing multi-layer nano-hetero-epitaxial semiconductor structures with arrays of semiconductor quantum dots, obtained from the metal-semiconductor structural phase transition. A semiconductor material produced through such process is also described.
摘要翻译：描述了用于从具有金属 - 半导体结构相变的半导体量子点阵列生长多层纳米异质外延半导体结构的过程。还描述了通过这种工艺制造的半导体材料。

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