专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

EP2690782B1 PIEZOELECTRIC DEVICE AND MANUFACTURING METHOD FOR PIEZOELECTRIC DEVICE 有权
公开(公告)号：EP2690782B1
公开(公告)日：2020-09-09
申请号：EP12759963.7
申请日：2012-03-21
申请人： Murata Manufacturing Co., Ltd.
发明人： ITO Korekiyo , IWAMOTO Takashi
IPC分类号： H03H3/08 , H03H9/02 , H03H9/145 , H01L41/187 , H01L41/29 , H01L41/313 , H01L41/33

2. 发明公开

EP3057147A4 MACROMOLECULAR PIEZOELECTRIC MATERIAL AND MANUFACTURING METHOD THEREFOR 审中-公开
标题翻译： MAKROMOLEKULARES PIEZOELEKTRISCHES MATERIAL UND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP3057147A4
公开(公告)日：2017-06-14
申请号：EP14866170
申请日：2014-11-10
申请人： MITSUI CHEMICALS INC
发明人： TANIMOTO KAZUHIRO , YOSHIDA MITSUNOBU , NISHIKAWA SHIGEO
IPC分类号： H01L41/193 , C08G63/06 , H01L41/33 , H01L41/45
CPC分类号： H01L41/193 , C08G63/06 , H01L41/333 , H01L41/45

3. 发明公开

EP2555269A4 METHOD FOR MANUFACTURING FERROELECTRIC DEVICE 审中-公开
标题翻译：方法用于制造电子设备FERRO
公开(公告)号：EP2555269A4
公开(公告)日：2014-05-14
申请号：EP11765654
申请日：2011-03-30
申请人： PANASONIC CORP
发明人： MATSUSHIMA TOMOAKI , YAMAUCHI NORIHIRO , OGAWA JUNYA , AIZAWA KOICHI
IPC分类号： H01L21/8246 , H01L41/313 , B81C3/00 , G01J1/02 , H01L27/105 , H01L37/02 , H01L41/08 , H01L41/113 , H01L41/18 , H01L41/22 , H01L41/316 , H01L41/319 , H01L41/33 , H01L41/39
CPC分类号： G01J5/34 , H01L28/56 , H01L37/02 , H01L41/1136 , H01L41/313 , H01L41/319
摘要： A seed layer having a predetermined pattern is formed on a side of one surface of a second substrate, and a ferroelectric layer is formed on the side of said one surface of the second substrate. A lower electrode is formed on the ferroelectric layer, and the lower electrode and a first substrate are bonded via a bonding layer. A laser beam with a predetermined wavelength is irradiated from a side of other surface of the second substrate to transfer a ferroelectric film, which overlaps with the seed layer, of the ferroelectric layer and the seed layer onto the side of said one surface of the first substrate. The laser beam is a beam with a wavelength, herein the beam passes through the second substrate, and is reflected by the seed layer, and moreover is absorbed by a second portion of the ferroelectric layer. The second portion does not overlap with the seed layer.

4. 发明公开

EP4228900A1 METHODS FOR DEPOSITING PIEZOELECTRIC MATERIALS, AND MATERIALS DEPOSITED THEREWITH 审中-实审转让
公开(公告)号：EP4228900A1
公开(公告)日：2023-08-23
申请号：EP21881259.2
申请日：2021-10-18
申请人： Qorvo Biotechnologies, LLC
发明人： DENIZ, Derya , BELSICK, John , WASILIK, Matthew , DIEP, Buu Quoc
IPC分类号： B41J2/16 , H01L41/316 , H01L41/33

5. 发明公开

EP4029146A1 PIEZOELECTRIC BULK LAYERS WITH TILTED C-AXIS ORIENTATION AND METHODS FOR MAKING THE SAME 审中-实审
公开(公告)号：EP4029146A1
公开(公告)日：2022-07-20
申请号：EP20863361.0
申请日：2020-09-11
申请人： Qorvo US, Inc.
发明人： DENIZ, Derya , WASILIK, Matthew , KRAFT, Robert , BELSICK, John
IPC分类号： H03H9/15 , H01L41/33 , H01L41/337

6. 发明公开

EP3057147A1 MACROMOLECULAR PIEZOELECTRIC MATERIAL AND MANUFACTURING METHOD THEREFOR 审中-公开
标题翻译： MAKROMOLEKULARES PIEZOELEKTRISCHES MATERIAL UND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP3057147A1
公开(公告)日：2016-08-17
申请号：EP14866170.5
申请日：2014-11-10
申请人： Mitsui Chemicals, Inc.
发明人： TANIMOTO, Kazuhiro , YOSHIDA, Mitsunobu , NISHIKAWA, Shigeo
IPC分类号： H01L41/193 , C08G63/06 , H01L41/33 , H01L41/45
CPC分类号： H01L41/193 , C08G63/06 , H01L41/333 , H01L41/45
摘要： There is provided a polymeric piezoelectric material including a helical chiral polymer (A) having a weight-average molecular weight of from 50,000 to 1,000,000 and an optical purity of more than 97.0%ee but less than 99.8%ee as calculated by the following formula, in which a piezoelectric constant d 14 measured at 25°C by a stress-charge method is 1pC/N or more: optical purity % ee = 100 × L − form amount − D − form amount / L − form amount + D − form amount , [in which an amount of L-form (% by mass) and an amount of D-form of an optically active polymer (% by mass) are values obtained by a method using high-performance liquid chromatography (HPLC)].
摘要翻译：提供了一种聚合物压电材料，其包括重均分子量为50,000-100,000的螺旋手性聚合物（A）和通过下式计算的光学纯度大于97.0％ee但小于99.8％ee，其中通过应力充电法在25℃下测得的压电常数d 14为1pC / N以上：光学纯度％ee = 100×L'形式量'D'形式量/ L'形式量 + D'形式的量，其中L型（质量％）的量和D型光学活性聚合物的量（质量％）是通过使用高效液相色谱法的方法获得的值（HPLC）]。

7. 发明公开

EP2690782A4 PIEZOELECTRIC DEVICE AND MANUFACTURING METHOD FOR PIEZOELECTRIC DEVICE 有权
标题翻译：压电器件及其制造方法的压电装置
公开(公告)号：EP2690782A4
公开(公告)日：2014-08-20
申请号：EP12759963
申请日：2012-03-21
申请人： MURATA MANUFACTURING CO
发明人： ITO KOREKIYO , IWAMOTO TAKASHI
IPC分类号： H03H3/08 , H01L41/187 , H01L41/33 , H03H9/02 , H03H9/145
CPC分类号： H01L41/29 , H01L41/04 , H01L41/0477 , H01L41/1873 , H01L41/297 , H01L41/313 , H01L2224/11 , H03H3/08 , H03H9/02574 , H03H9/02929 , H03H9/14538
摘要： Provided are a piezoelectric device that allows for an improvement in the power durability of an electrode formed on a piezoelectric thin film and a significant reduction in etchant concentration or etching time and a method for manufacturing such a piezoelectric device. Among a +C plane (22) on the +Z axis side of a piezoelectric thin film (20) and a -C plane (12) on the -Z axis side of the piezoelectric thin film (20), the -C plane (12) on the -Z axis side of the piezoelectric thin film (20) is etched. Thus, -Z planes (21) of the piezoelectric thin film (20) on which epitaxial growth is possible are exposed. Ti is epitaxially grown on the -Z planes (21) of the piezoelectric thin film (20) in the -Z axis direction such that the crystal growth plane thereof is parallel to the -Z planes (21) of the piezoelectric thin film (20). Al is then epitaxially grown on the surface of the Ti electrode (65) in the -Z axis direction such that the crystal growth plane thereof is parallel to the -Z planes (21) of the piezoelectric thin film (20).
摘要翻译：本发明提供一种压电装置做允许对在形成于压电薄膜和在蚀刻剂浓度，蚀刻时间显著减少和用于制造压电装置搜索的方法的电极的功率耐久性的改善。中的+ C面（22）上的压电薄膜（20）和在所述压电薄膜（20）的Z轴侧的-c面（12）的+ Z轴侧，C面（ 12）上的压电薄膜的-Z轴侧（20）被蚀刻。因此，压电薄膜（20），其上的外延生长是可能的Z平面（21）被暴露。 Ti的外延生长在所述压电薄膜的-Z面（21）（20）在所测试的Z轴方向的平面内做其晶体生长是平行于压电薄膜的Z平面（21）（20 ）。的Al，然后外延生长在所测试的Z轴方向的钛电极（65）的表面上做了其晶体生长面是平行于压电薄膜（20）的Z平面（21）。

8. 发明公开

EP4029068A1 INCREASED MUT COUPLING EFFICIENCY AND BANDWIDTH VIA EDGE GROOVE, VIRTUAL PIVOTS, AND FREE BOUNDARIES 审中-实审
公开(公告)号：EP4029068A1
公开(公告)日：2022-07-20
申请号：EP20863012.9
申请日：2020-09-11
申请人： Exo Imaging Inc.
发明人： BIRCUMSHAW, Brian , AKKARAJU, Sandeep , KWON, Haesung
IPC分类号： H01L41/33

9. 发明公开

EP2688206A4 PIEZOELECTRIC DEVICE, AND METHOD FOR MANUFACTURING PIEZOELECTRIC DEVICE 有权
标题翻译：压电器件及其制造方法的压电装置
公开(公告)号：EP2688206A4
公开(公告)日：2014-09-03
申请号：EP12756931
申请日：2012-03-12
申请人： MURATA MANUFACTURING CO
发明人： IWAMOTO TAKASHI
IPC分类号： H01L41/08 , H01L41/33 , H03H3/02 , H03H3/08 , H03H9/02
CPC分类号： H01L41/314 , H01L41/053 , H01L41/0815 , H01L41/18 , H01L41/27 , H01L41/313 , H03H3/02 , H03H3/08 , H03H9/02921 , H03H9/25

10. 发明公开

EP3993073A1 PIEZOELECTRIC FILM 无效
公开(公告)号：EP3993073A1
公开(公告)日：2022-05-04
申请号：EP20833686.7
申请日：2020-05-20
申请人： FUJIFILM Corporation
发明人： IWAMOTO, Takahiro
IPC分类号： H01L41/18 , H01L41/047 , H01L41/053 , H01L41/33 , H04R17/00
摘要： Provided is a piezoelectric film capable of realizing an electroacoustic conversion film with an excellent heat dissipation property, in which a sufficient sound pressure with respect to an input operating voltage is obtained. The piezoelectric film is a piezoelectric film including a polymer-based piezoelectric composite material which contains piezoelectric particles in a matrix containing a polymer material, electrode layers which are laminated on both surfaces of the polymer-based piezoelectric composite material, and a protective layer laminated on a surface of at least one electrode layer, in which in a case where a cross section of the piezoelectric film is observed with a scanning electron microscope, at least one electrode layer has a plurality of projections directed toward the protective layer, and the number of projections is in a range of 2 to 40 per visual field of 85 µm in the cross section.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式