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1. 发明公开

EP1009034A4 SEMICONDUCTOR QUANTUM OSCILLATION DEVICE 失效
标题翻译：半导体量子振荡器装置
公开(公告)号：EP1009034A4
公开(公告)日：2002-11-27
申请号：EP98910573
申请日：1998-03-23
申请人： LI BINGHUI
发明人： LI BINGHUI
IPC分类号： H01L29/88 , H01L33/06 , H01L33/20 , H01L33/30 , H01L33/34 , H01L33/40 , H01S5/34 , H01L29/15 , H01L29/24 , H01L29/885 , H01L33/00 , H03B7/08 , H01S3/19
CPC分类号： H01L33/06 , B82Y20/00 , H01L29/88 , H01S5/34
摘要： A semiconductor quantum oscillation device which can produce an oscillation on the basis of a novel injection principle of carriers includes a structure made of a multilayer material and a means for applying a voltage to said structure. The multilayer structure has a tunneling injection region and a pair of oscillation regions which are provided in both side of the tunneling injection region and contact with it. The means for applying a voltage applies a voltage to the pair of oscillation regions and causes the valence band electron in tunneling region to tunnel interbandly into the conduct band, so as to introduce electrons and holes which are to generate a quantum oscillation motion and to cause a far-infrared radiation. This can fully utilize the electromagnetic wave between the high end of millimetric wave and the low end of the far-infrared.

2. 发明公开

EP2870632A4 RADIAL NANOWIRE ESAKI DIODE DEVICES AND METHODS 有权
标题翻译： RADIAL隧道二极管，纳米线设备和方法
公开(公告)号：EP2870632A4
公开(公告)日：2016-03-09
申请号：EP13813238
申请日：2013-07-05
申请人： QUNANO AB
发明人： WERNERSSON LARS-ERIK , LIND ERIK , OHLSSON JONAS , SAMUELSON LARS , BJÖRK MIKAEL , THELANDER CLAES , DEY ANIL
IPC分类号： H01L29/885 , B82Y10/00 , H01L29/06 , H01L29/739 , H01L29/78 , H01L31/0693
CPC分类号： H01L27/0629 , B82Y10/00 , H01L29/0669 , H01L29/0676 , H01L29/068 , H01L29/122 , H01L29/205 , H01L29/517 , H01L29/66977 , H01L29/7391 , H01L29/78 , H01L29/78642 , H01L29/885 , H01L31/035227 , H01L31/06 , H01L31/068 , H01L31/0687 , Y02E10/50

3. 发明公开

EP2491595A4 NANOWIRE TUNNEL DIODE AND METHOD FOR MAKING THE SAME 审中-公开
标题翻译： NANODRAHTTUNNELDIONDE及其制造方法
公开(公告)号：EP2491595A4
公开(公告)日：2014-03-19
申请号：EP10825300
申请日：2010-10-22
申请人： SOL VOLTAICS AB
发明人： BORGSTROEM MAGNUS , HEURLIN MAGNUS , FAELT STEFAN
IPC分类号： H01L29/885 , B82B1/00 , H01L29/06 , H01L31/0352
CPC分类号： H01L29/88 , B82Y10/00 , H01L29/0665 , H01L29/0676 , H01L29/068 , H01L29/205 , H01L29/885 , H01L31/035227 , H01L31/076 , H01L31/1852 , Y02E10/544 , Y02E10/548 , Y02P70/521

4. 发明公开

EP2251912A1 Tunneldioden aus spannungskompensierten Verbindungshalbleiterschichten 审中-公开
公开(公告)号：EP2251912A1
公开(公告)日：2010-11-17
申请号：EP09006342.1
申请日：2009-05-11
申请人： Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
发明人： Guter, Wolfgang , Dimroth, Frank , Schöne, Jan
IPC分类号： H01L31/068 , H01L33/04 , H01S5/183 , H01L29/885
CPC分类号： H01L33/06 , H01L29/885 , H01L31/0687 , H01L33/0045 , H01L33/30 , H01S5/183 , H01S5/3095 , Y02E10/544 , Y02P70/521
摘要： Die Erfindung bezieht sich auf Halbleiterbauteile, insbesondere Solarzellen aus III-V Verbindungshalbleitern, wie sie in terrestrischen PV Konzentratorsystemen oder zur elektrischen Energieversorgung in Satelliten eingesetzt werden. Sie findet jedoch auch Anwendung in anderen optoelektronischen Bauteilen, wie Laser und Leuchtdioden, wo entweder hohe Tunnelstromdichten nötig sind oder spezielle Materialien zum Einsatz kommen und wo eine Verspannung der Gesamtstruktur nicht erwünscht ist.
Die Erfindung besteht darin, Tunneldioden von Halbleiterbauteilen mit spannungskompensierten Halbleiterschichten vorzusehen.
摘要翻译：该部件具有布置在两个半导体层之间的隧道二极管。隧道二极管包括退化的N导电层（3）和退化的P导电层（4）。这些层的厚度范围为10至100纳米，其中退化的n导电层的材料的光栅常数表现出0.5％的差异。层的光栅常数对应于半导体层的材料的光栅常数。 p导电层掺杂有碳，并且n导电层掺杂有碲，硅和锗。

5. 发明授权

EP0923792B1 SILICON GERMANIUM SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME 失效
标题翻译：的硅锗半导体器件及其制造方法
公开(公告)号：EP0923792B1
公开(公告)日：2007-02-07
申请号：EP98910935.0
申请日：1998-04-14
申请人： Koninklijke Philips Electronics N.V.
发明人： BROWN, Adam, Richard , HURKX, Godefridus, Adrianus, Maria , DE BOER, Wiebe, Barteld , SLOTBOOM, Jan, Willem
IPC分类号： H01L29/885 , H01L29/165 , H01L21/329
CPC分类号： H01L29/885 , Y10S438/979
摘要： A semiconductor device with a tunnel diode (23) is particularly suitable for various applications. Such a device comprises two mutally adjoining semiconductor regions (2, 3) of opposed conductivity types and having doping concentrations which are so high that breakdown between them leads to conduction by means of tunnelling. A disadvantage of the known device is that the current-voltage characteristic is not yet steep enough for some applications. In a device according to the invention, the portions (2A, 3A) of the semiconductor regions (2, 3) adjoining the junction (23) comprise a mixed crystal of silicon and germanium. It is surprisingly found that the doping concentration of both phosphorus and boron are substantially increased, given the same amount of dopants being offered as during the formation of the remainder of the regions (2, 3). The tunnelling efficiency is substantially improved as a result of this, and also because of the reduced bandgap of said portions (2A, 3A), and the device according to the invention has a much steeper current-voltage characteristic both in the forward and in the reverse direction. This opens perspectives for inter alia an attractive application where the tunnelling pn junction (23) is used as a transition between two conventional diodes, for example pn or pin diodes, which are used one stacked on the other and which can be formed in a single epitaxial growing process thanks to the invention. The portions (2A, 3A) adjoining the tunnelling junction (22) are preferably 5 to 30 mm thick and comprise between 10 and 50 at% germanium. The doping concentration may be 6 x 1019 or even more than 10?20 at/cm3¿. The invention futher relates to a simple method of manufacturing a device according to the invention. This is preferably done at a temperature of between 550 °C and 800 °C.

6. 发明授权

EP2430672B1 TUNNELDIODEN AUS SPANNUNGSKOMPENSIERTEN VERBINDUNGSHALBLEITERSCHICHTEN 有权
公开(公告)号：EP2430672B1
公开(公告)日：2020-12-02
申请号：EP10721694.7
申请日：2010-05-11
申请人： Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
发明人： GUTER, Wolfgang , DIMROTH, Frank , SCHÖNE, Jan
IPC分类号： H01L31/0687 , H01L29/885 , H01L33/04 , H01L33/06 , H01L33/30 , H01S5/183 , H01L29/88 , H01S5/30 , H01L33/00

7. 发明公开

EP3167486A4 A NEGATIVE DIFFERENTIAL RESISTANCE BASED MEMORY 审中-公开
公开(公告)号：EP3167486A4
公开(公告)日：2018-07-11
申请号：EP14897139
申请日：2014-07-08
申请人： INTEL CORP
发明人： MORRIS DANIEL H , AVCI UYGAR E , RIOS RAFAEL , YOUNG IAN A
IPC分类号： H01L21/8242 , G11C11/404 , H01L27/102 , H01L27/105 , H01L27/108 , H01L29/739 , H01L29/885
CPC分类号： G11C11/38 , G11C11/404 , G11C11/412 , H01L27/102 , H01L27/1021 , H01L27/1052 , H01L29/7391 , H01L29/885
摘要： Described is a memory bit-cell comprising: a storage node; an access transistor coupled to the storage node; a capacitor having a first terminal coupled to the storage node; and one or more negative differential resistance devices coupled to the storage node such that the memory bit-cell is without one of a ground line or a supply line or both.

8. 发明公开

EP2430672A1 TUNNELDIODEN AUS SPANNUNGSKOMPENSIERTEN VERBINDUNGSHALBLEITERSCHICHTEN 有权
标题翻译：电压来补偿连接器的半导体层隧道二极管
公开(公告)号：EP2430672A1
公开(公告)日：2012-03-21
申请号：EP10721694.7
申请日：2010-05-11
申请人： Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
发明人： GUTER, Wolfgang , DIMROTH, Frank , SCHÖNE, Jan
IPC分类号： H01L31/068 , H01L33/04 , H01S5/183 , H01L29/885
CPC分类号： H01L33/06 , H01L29/885 , H01L31/0687 , H01L33/0045 , H01L33/30 , H01S5/183 , H01S5/3095 , Y02E10/544 , Y02P70/521
摘要： The invention relates to semiconductor components, particularly solar cells made of III-V compound semiconductors, as used in terrestrial PV concentrator systems or for the electrical power supply in satellites. It is also used in other optoelectronic components, such as laser and light emitting diodes, where either high tunnel current densities are required or special materials are used, and where stress of the overall structure is not desirable. The invention consists of forming tunnel diodes from semiconductor components made of stress-compensated semiconductor layers.

9. 发明授权

EP3144979B1 ANTIMONIDE-BASED HIGH BANDGAP TUNNEL JUNCTION FOR SEMICONDUCTOR DEVICES 有权转让
公开(公告)号：EP3144979B1
公开(公告)日：2024-05-08
申请号：EP16178410.3
申请日：2016-07-07
IPC分类号： H01L31/0687 , H01L31/0693 , H01L31/0304 , H01L31/18 , H01L29/885
CPC分类号： Y02E10/544 , H01L31/0687 , H01L31/1844 , H01L31/03046 , H01L31/03042 , H01L31/0693

10. 发明公开

EP3872869A1 STAPELFÖRMIGE MONOLITHISCHE AUFRECHT-METAMORPHE III-V-MEHRFACHSOLARZELLE 审中-公开
公开(公告)号：EP3872869A1
公开(公告)日：2021-09-01
申请号：EP21000048.5
申请日：2021-02-15
申请人： AZUR SPACE Solar Power GmbH
发明人： van Leest, Rosalinda
IPC分类号： H01L31/0687 , H01L31/0304 , H01L29/885
摘要： Stapelförmige monolithische Mehrfachsolarzelle aufweisend eine erste Teilzelle mit einer ersten Bandlücke und einer ersten Gitterkonstante, eine unter der ersten Teilzelle angeordnete zweite Teilzelle mit einer zweiten, größeren Bandlücke und einer zweiten Gitterkonstante, wobei zwischen der ersten und zweiten Teilzellen eine erste Tunneldiode mit einer p + -Schicht mit einer dritten Gitterkonstanten und einer n + -Schicht mit einer vierten Gitterkonstanten angeordnet ist, die zweite und vierte Gitterkonstante jeweils gleich der ersten Gitterkonstanten sind, die erste Teilzelle, die zweite Teilzelle und die erste Tunneldiode jeweils mindestens ein Element der III. Hauptgruppe und mindestens ein Element der V. Hauptgruppe aufweisen, die p + -Schicht (Ga)AlInAs aufweist oder aus (Ga)AlInAs besteht, die p + -Schicht bezogen auf die von der p + -Schicht umfassten Elemente der III. Hauptgruppe einen Gallium-Gehalt von kleiner als 10% aufweist, die dritte Gitterkonstante der p + -Schicht kleiner oder gleich der Gitterkonstanten der ersten Teilzelle ist.

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