会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明公开
    • Process of producing a porous layer structure, product obtained and use of such product
    • 一种制备多孔层结构制造的产品和它的使用过程中
    • EP2816143A1
    • 2014-12-24
    • EP14001929.0
    • 2014-06-04
    • Hochschule Furtwangen
    • Mozaffari-Jovein, HadiSoares, Tiago Augusto
    • C25D5/02C25D5/10C25D5/34C25D21/12C30B7/00C30B7/12C30B30/02
    • C25D5/022A61F2/0077A61L27/06A61L27/306A61L27/56A61L2420/02A61L2420/08C25D5/10C25D5/34C25D21/12
    • The present invention relates to a process of producing a porous layer structure on a heterogeneous polycrystalline substrate, comprising the following steps:
      (i) providing a heterogeneous polycrystalline substrate having at least two regions with different chemical-physical properties,
      (ii) conducting a selective etching process on said polycrystalline substrate, resulting in etched regions corresponding to one of the at least two regions of said substrate and non-etched regions corresponding to the other one of said at least two regions of said substrate,
      (iii) covering the entire surface of the substrate with an insulating material, thus creating an insulating layer on said substrate,
      (iv) polishing the surface of the substrate to such an extent that the non-etched regions of step (ii) are exposed,
      (v) depositing microstructures on said non-etched regions and stopping the deposition before the growth of the microstructures starts narrowing their cavities formed between adjacently growing microstructures,
      (vi) optionally washing the entire substrate having the microstructures deposited thereon with a solvent for removing the insulating material, and
      (vii) repeating successively above steps (iii), (iv), (v) and (vi) in a loop process till a desired height of the microstructures is reached, where at least in the final loop the washing step (vi) is carried out.
    • 本发明涉及在多相多晶衬底制造的多孔层结构,其包括以下步骤的方法:(i)提供具有不同的化学 - 物理特性的至少两个区域异构的多晶基材,(ii)进行的选择性 在所述的多晶基材,在对应于所述底物和非蚀刻区域对应于所述的其它一个所述基板的至少两个区域的至少两个区域中的一个蚀刻区得到的,(ⅲ)覆盖整个表面蚀刻工艺 基板与绝缘材料,因此产生关于在所述基底绝缘层,(ⅳ)抛光所述基板的表面上的程度的搜索没有步骤的非蚀刻区域(ii)的暴露,(v)上沉积的微观结构 所述非蚀刻区域和微结构的生长之前停止该沉积相邻之间开始变窄,形成了空腔克 由于微结构,(ⅵ)任选地洗涤具有用于去除绝缘材料的溶剂沉积在其上的微结构的整个底物,和(vii)依次重复上述步骤(ⅲ),(ⅳ),(ⅴ)和(ⅵ)在一个 达到循环处理,直到微结构的期望的高度,其中,至少在最终循环的洗涤步骤(vi)中进行。