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1. 发明授权

EP3891236B1 COMPOSITION AND METHOD FOR METAL CMP 有权转让
公开(公告)号：EP3891236B1
公开(公告)日：2024-01-31
申请号：EP19893774.0
申请日：2019-11-13
发明人： KRAFT, Steven , HUNG LOW, Fernando , CLINGERMAN, Daniel , IVANOV, Roman A. , GRUMBINE, Steven
IPC分类号： C09G1/02 , C09K3/14 , B24B37/005 , B24B37/04 , B24B57/02 , H01L21/3105 , H01L21/321

2. 发明公开

EP4155025A1 SUBSTRATE WAFER PRODUCTION METHOD AND SUBSTRATE WAFER 审中-实审
公开(公告)号：EP4155025A1
公开(公告)日：2023-03-29
申请号：EP21808888.8
申请日：2021-03-17
申请人： Shin-Etsu Handotai Co., Ltd.
发明人： TAGA, Ryo , TANAKA, Yuki
IPC分类号： B24B1/00 , B24B7/04 , B24B37/005 , H01L21/304
摘要： The present invention provides a manufacturing method for a substrate wafer, including: providing a wafer having a first main surface and a second main surface; forming a flattening resin layer on the second main surface; with the flattening resin layer adsorbed and held as a reference surface, grinding or polishing the first main surface as a first processing; removing the flattening resin layer from the wafer; with the first main surface of the wafer subjected to the first processing adsorbed and held, grinding or polishing the second main surface as a second processing; with the second main surface subjected to the second processing adsorbed and held, further grinding or polishing the first main surface as a third processing; with the first main surface subjected to the third processing adsorbed and held, further grinding or polishing the second main surface as a fourth processing to obtain a substrate wafer, wherein the first processing and/or the third processing is executed such that the wafer has a central concave or central convex thickness distribution. As a result, there can be provided a manufacturing method for a substrate wafer capable of manufacturing a substrate wafer having a warp and an excellent nanotopography.

3. 发明授权

EP3479958B1 SUBSTRATE POLISHING DEVICE AND POLISHING METHOD 有权转让
公开(公告)号：EP3479958B1
公开(公告)日：2023-01-04
申请号：EP18204957.7
申请日：2018-11-07
发明人： NAKANISHI, Masayuki , KODERA, Kenji
IPC分类号： B24B37/10 , B24B37/04 , B24B37/005 , B24B27/00 , B24B41/06 , B24B41/047 , B24B37/30 , B24B37/12

4. 发明授权

EP3849742B1 METHODS FOR POLISHING SEMICONDUCTOR SUBSTRATES THAT ADJUST FOR PAD-TO-PAD VARIANCE 有权
公开(公告)号：EP3849742B1
公开(公告)日：2022-10-05
申请号：EP19762673.2
申请日：2019-08-23
发明人： YOSHIMURA, Ichiro , CHU, Alex , CHIU, H.J. , BHAGAVAT, Sumeet , KIM, TaeHyeong , KATAKURA, Norimasa , KITAZAWA, Masaru
IPC分类号： B24B9/06 , B24B49/04 , B24B37/005 , B24B37/20 , B24B49/03

5. 发明公开

EP3946808A1 CHEMICAL-MECHANICAL POLISHING SYSTEM AND METHOD OF OPERATING THE SAME 有权
公开(公告)号：EP3946808A1
公开(公告)日：2022-02-09
申请号：EP21716892.1
申请日：2021-03-11
申请人： Bruker Nano, Inc.
发明人： GULKOV, Vladimir , YEREMIN, Nikolay
IPC分类号： B24B37/005 , B24B37/04 , B24B37/30 , B24B49/10 , B24B49/00 , B24B49/16 , B24B57/02

6. 发明公开

EP3909717A1 FILM THICKNESS MEASUREMENT APPARATUS, POLISHING APPARATUS, AND FILM THICKNESS MEASUREMENT METHOD 审中-实审转让
公开(公告)号：EP3909717A1
公开(公告)日：2021-11-17
申请号：EP21173616.0
申请日：2021-05-12
申请人： Ebara Corporation
发明人： SATORI, Hirotaka , ISHII, Yu , KIMBA, Toshifumi , KINOSHITA, Masaki
IPC分类号： B24B37/005 , B24B37/013 , B24B49/12 , G01B11/06 , H01L21/304
摘要： Provided is a technique capable of suppressing a shortage of a light amount of a reflected light from wiring patterns even when a film thickness of a film is thick. A film thickness measurement apparatus 30 is applicable to a polishing apparatus 10 for polishing a film 202 of a substrate 200. The film 202 includes a plurality of wiring patterns. The film thickness measurement apparatus 30 includes a light emitter 43 configured to project an emitted light L1 during polishing of the film by the polishing apparatus, an optical condenser 44 configured to condense the emitted light projected from the light emitter to provide a predetermined spot size D and project the light onto the film, and a light receiver 45 configured to receive a reflected light L2 reflected from the film. The predetermined spot size is smaller than a minimum width of respective wiring patterns constituting the plurality of wiring patterns.

7. 发明公开

EP3891235A1 COMPOSITION AND METHOD FOR SILICON NITRIDE CMP 有权
公开(公告)号：EP3891235A1
公开(公告)日：2021-10-13
申请号：EP19893518.1
申请日：2019-11-13
申请人： CMC Materials, Inc.
发明人： HUNG LOW, Fernando , KRAFT, Steven , IVANOV, Roman A.
IPC分类号： C09G1/02 , C09K3/14 , B24B37/005 , B24B37/04 , B24B57/02

8. 发明授权

EP2838110B1 Polishing apparatus 有权
标题翻译： Poliervorrichtung
公开(公告)号：EP2838110B1
公开(公告)日：2016-04-27
申请号：EP14188224.1
申请日：2005-10-31
申请人： Ebara Corporation
发明人： Nabeya, Osamu , Togawa, Tetsuji , Fukushima, Makoto , Yasuda, Hozumi
IPC分类号： H01L21/304 , B24B37/04 , B24B47/22 , B24B49/16 , B24B37/30 , B24B37/005 , B24B37/10 , B24B37/32 , B24B49/00
CPC分类号： B24B37/20 , B24B37/005 , B24B37/10 , B24B37/105 , B24B37/30 , B24B37/32 , B24B47/22 , B24B49/00 , B24B49/16

9. 发明公开

EP1617465A4 CMP POLISHING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译： FOR的半导体元件CMP研磨方法和手段
公开(公告)号：EP1617465A4
公开(公告)日：2007-07-04
申请号：EP04727407
申请日：2004-04-14
申请人： NIPPON KOGAKU KK
发明人： HOSHINO SUSUMU , KITADE YUKO , YOSHIDA NORIO
IPC分类号： H01L21/3105 , B24B37/005 , H01L21/304 , H01L21/3205 , H01L21/321 , H01L21/768
CPC分类号： H01L21/3212 , H01L21/31053
摘要： A wafer substrate having a wiring pattern formed between materials with a dielectric constant of 2 or less is polished with the polishing pressure being set at 0.01 to 0.2 psi. As a result, favorable polishing can be performed even in cases where a ultra-low-k material having the dielectric constant of 2 or less is used as an insulating material.

10. 发明公开

EP0992322A4 POLISHING DEVICE 审中-公开
标题翻译： SCHLEIFVORRICHTUNG
公开(公告)号：EP0992322A4
公开(公告)日：2006-09-27
申请号：EP99912102
申请日：1999-04-05
申请人： EBARA CORP
发明人： KIMURA NORIO , MARUYAMA TORU , KOJIMA SHUNICHIRO , KATSUOKA SEIJI , OHWADA SHIN
IPC分类号： B24B37/00 , B24B37/005 , B24B37/32 , B24B49/16 , B24B55/02 , H01L21/304
CPC分类号： B24B37/32 , B24B49/16
摘要： A polishing device for polishing an object to be polished such as a semiconductor wafer to a flat and mirror finish, comprising a turn table on the upper surface of which an abrasive cloth is pasted and a top ring (1), wherein a semiconductor wafer interposed between the turn table and the top ring (1) is pressed with a specified strength and is polished to a flat and mirror finish, the polishing device further comprising a vertically movable pressing ring (3) disposed around the top ring (1) having a recess to receive a semiconductor wafer and a pressing means (22) for pressing the pressing ring (3) to the abrasive cloth with a variable force, the pressing ring (3) being supported on the top ring (1) via a bearing (37).
摘要翻译： 1。一种研磨装置，其将半导体晶片等被研磨物研磨成平坦且镜面精加工，其特征在于，在上表面粘贴有研磨布的转台和顶环（1）中，在转台和顶环（1）之间以规定的强度压制并且抛光成平坦且镜面抛光，所述抛光装置还包括围绕顶环（1）设置的可垂直移动的压环（3），所述压环用于容纳半导体晶片的凹槽以及用于以可变力将压环（3）压到砂布上的压紧装置（22），压环（3）通过轴承（37）支撑在顶环（1）上，）。

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