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1. 发明公开

EP3304741A1 EXCLUSIVE-OR LOGIC DEVICE WITH SPIN ORBIT TORQUE EFFECT 审中-公开
标题翻译：具有自旋轨道转矩效应的独占或逻辑设备
公开(公告)号：EP3304741A1
公开(公告)日：2018-04-11
申请号：EP15893517.1
申请日：2015-05-28
申请人： INTEL Corporation
发明人： MANIPATRUNI, Sasikanth , NIKONOV, Dmitri , YOUNG, Ian A.
IPC分类号： H03K19/21 , H01L43/08
CPC分类号： H03K19/21 , H01L43/04 , H01L43/08 , H03K19/18
摘要： Described is an apparatus which comprises: a first layer formed of a material that exhibits spin orbit torque effect; a second layer formed of material that exhibits spin orbit torque effect; and a magnetic tunneling junction (MTJ) including first and second free magnetic layers, wherein the first free magnetic layer is coupled to the first layer and wherein the second free magnetic layer is coupled to the second layer.

2. 发明授权

EP2269309B1 DISPOSITIF MAGNÉTIQUE POUR LA RÉALISATION D'UNE « FONCTION LOGIQUE » 有权
标题翻译：磁性器件具体逻辑功能
公开(公告)号：EP2269309B1
公开(公告)日：2013-11-06
申请号：EP09745935.8
申请日：2009-04-15
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives , Centre National de la Recherche Scientifique
发明人： JAVERLIAC, Virgile , PRENAT, Guillaume
IPC分类号： H03K19/18
CPC分类号： H03K19/18 , G06F7/501 , G06F2207/4802 , H01L27/22

3. 发明公开

EP2269309A1 DISPOSITIF MAGNÉTIQUE POUR LA RÉALISATION D'UNE « FONCTION LOGIQUE » 有权
标题翻译：磁性器件具体逻辑功能
公开(公告)号：EP2269309A1
公开(公告)日：2011-01-05
申请号：EP09745935.8
申请日：2009-04-15
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives , Centre National de la Recherche Scientifique
发明人： JAVERLIAC, Virgile , PRENAT, Guillaume
IPC分类号： H03K19/18
CPC分类号： H03K19/18 , G06F7/501 , G06F2207/4802 , H01L27/22
摘要： The invention relates to a device (9) for performing a "logic function", comprising a magnetic structure including: at least a first magnetoresistive stack (MTJ3) that includes a first ferromagnetic layer and a second ferromagnetic layer that are separated by a non-ferromagnetic interlayer; and at least a first current line (32) in the vicinity of the first magnetoresistive stack (MTJ3), which line generates a magnetic field, when an electrical current passes therethrough, in the vicinity of the first stack (MTJ3). The aforementioned first line (32) includes at least two current input points so that two currents are added together in the first line (32), the sum of said two currents being determined by the logic function.

4. 发明授权

EP1479166B1 STANDARDZELLENANORDUNG FÜR EIN MAGNETO-RESISTIVES BAUELEMENT 有权
标题翻译：用于磁阻组件的标准单元布置
公开(公告)号：EP1479166B1
公开(公告)日：2010-03-17
申请号：EP02758170.1
申请日：2002-08-28
申请人： SIEMENS AKTIENGESELLSCHAFT
发明人： BANGERT, Joachim
IPC分类号： H03K19/18
CPC分类号： H03K19/18

5. 发明授权

EP1741187B1 PROGRAMMIERMATRIX 有权
公开(公告)号：EP1741187B1
公开(公告)日：2009-11-11
申请号：EP05716991.4
申请日：2005-03-10
申请人： SIEMENS AKTIENGESELLSCHAFT
发明人： BANGERT, Joachim
IPC分类号： H03K19/18 , H03K19/168
CPC分类号： H03K19/17736 , G11C17/02 , H03K19/1778 , H03K19/18

6. 发明公开

EP1836770A1 NICHTFLÜCHTIG REKONFIGURIERBARE DIGITALE LOGIKEINHEIT 有权
标题翻译：保持可重构数字逻辑单元
公开(公告)号：EP1836770A1
公开(公告)日：2007-09-26
申请号：EP05825233.9
申请日：2005-12-21
申请人： Siemens Aktiengesellschaft
发明人： BANGERT, Joachim
IPC分类号： H03K19/18 , G11C11/18
CPC分类号： G11C11/16 , H03K19/1735 , H03K19/18
摘要： The invention relates to a non-volatile reconfigurable digital logic unit, comprising cells with a magnetic layer system, the resistance of which may be altered by magnetic field pulses, comprising a first line branch with data cells arranged in series and a second line branch with configurable configuration cells arranged in series and an analytical means for the configured status, whereby the analytical means comprises: a difference amplifier (12), for determining a voltage signal giving the difference voltage of the line branches, a means for shifting the voltage signal to a value other than 0 volts, preferably embodied as an adder or subtractor, a comparator (14) or window comparator (19, 21), for the decision as to whether the voltage signal lies in a valid or forbidden range and a means for evaluating a valid voltage signal and for output of a logical low or high signal.

7. 发明授权

EP0741422B1 MAGNETICALLY CONTROLLED LOGIC CELL 失效
标题翻译：磁控逻辑单元
公开(公告)号：EP0741422B1
公开(公告)日：2002-05-02
申请号：EP95908397.3
申请日：1995-01-05
申请人： Mordkovich, Viktor Naumovich
发明人： BARANOCHNIKOV, Mikhail Lvovich , KRASNIKOV, Gennady Yakovlevich , MORDKOVICH, Viktor Naumovich , PRIKHODKO, Pavel Sergeevich , MIKHAILOV, Valery Alexandrovich
IPC分类号： H01L43/04
CPC分类号： H03K17/9517 , G11C11/18 , H01L27/02 , H03K19/18
摘要： A magnetically controlled logic cell comprising: a semiconductor substrate (1) coated with a dielectric film and containing four field-effect transistors; four current supply buses in contact with the transistors and arranged on the surface of the dielectric film (17), two of the buses in question being power supply buses (34, 35), the other two output buses (36, 37); and a region insulated from the substrate by a layer of concealed dielectric and by side insulation, the region in question containing four contacts configured symmetrically in pairs and connected to the said transistors, power supply buses (34, 35) and output buses (36, 37).

8. 发明公开

EP3419173A1 AN ELECTRICAL SWITCHING CIRCUIT, CORRESPONDING METHOD AND APPARATUS 有权
公开(公告)号：EP3419173A1
公开(公告)日：2018-12-26
申请号：EP18178903.3
申请日：2018-06-20
申请人： Illinois Tool Works Inc.
发明人： SCLIP, Marco , DEMSAR, Goran
IPC分类号： H03K17/95 , G01D5/14 , H03K19/18
CPC分类号： H03K17/9517 , G01R33/072 , H03K19/18
摘要： An electrical switching circuit, includes a first (X1) and a second (X2) terminal; an electromagnetic switch (200) having a positive (V+) and a negative (V-) power supply terminal and an output terminal (O), the negative (V-) power supply terminal being connected to the second (X2) terminal; an electronic switch (T1) connected between the first (X1) and the second (X2) terminal and having a control terminal connected to the output (O) of the electromagnetic switch (200), that switches between an opened and a closed condition as a function of a signal applied to the control terminal, thereby varying the resistance between the first (X1) and the second (X2) terminal; electrical storage means (C1), connected between the positive (V+) and negative (V-) power supply terminal of the electromagnetic switch (200); and a diode (D1), with the cathode connected to the positive power supply terminal (V+) of the electromagnetic switch (200) and the anode connected to the first (X1) terminal, whereby: when the voltage (V OUT ) between the first (X1) and the second (X2) terminal is greater or smaller than the voltage between the positive (V+) and the negative (V-) power supply terminal of the electromagnetic switch (200), the diode (D1) is closed or opened and the electromagnetic switch (200) is either supplied by the voltage (V OUT ) between the first (X1) and the second (X2) terminal or by the electrical storage means (C1), the electrical storage means (C1) charging when the voltage (V OUT ) between the first (X1) and the second (X2) terminal is greater than the voltage between the positive (V+) and the negative (V-) power supply terminal of the electromagnetic switch (200).

9. 发明公开

EP3235017A1 MAGNETO-ELECTRIC DEVICES AND INTERCONNECT 审中-公开
标题翻译：磁电设备和互连
公开(公告)号：EP3235017A1
公开(公告)日：2017-10-25
申请号：EP14908599.5
申请日：2014-12-18
申请人： Intel Corporation
发明人： NIKONOV, Dmitri E. , MANIPATRUNI, Sasikanth , YOUNG, Ian A.
IPC分类号： H01L43/08 , G11C11/15
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1675 , G11C11/22 , G11C21/00 , H01L41/12 , H01L43/10 , H03K19/18 , H03K19/23
摘要： Described is an interconnect which comprises: a first end having a ferromagnetic layer coupled to a first magnetoelectric material layer; and a second end having a second magnetoelectric material layer coupled to the ferromagnetic layer, wherein the ferromagnetic layer extends from the first end to the second end. Described is a majority gate device which comprises: a ferromagnetic layer; and first, second, third, and fourth magnetoelectric material layers coupled to the ferromagnetic layer. Described is an apparatus which comprises: a first end having a ferromagnetic layer coupled to a first magnetoelectric material layer; and a second end having a tunnel junction device coupled to the ferromagnetic layer. Described is an apparatus which comprises: a first terminal coupled to a tunneling junction device; a second terminal coupled to a layer coupling the tunneling junction device and a magnetoelectric device; and a third terminal coupled to the magnetoelectric device.
摘要翻译：描述了一种互连，其包括：具有耦合到第一磁电材料层的铁磁层的第一端; 以及具有耦合到铁磁层的第二磁电材料层的第二端，其中铁磁层从第一端延伸到第二端。描述了一种多数栅极器件，其包括：铁磁层; 以及耦合到铁磁层的第一，第二，第三和第四磁电材料层。描述了一种设备，其包括：具有耦合到第一磁电材料层的铁磁层的第一端; 以及具有耦合到铁磁层的隧道结器件的第二端。描述了一种装置，包括：耦合到隧道结装置的第一端子; 耦合到耦合所述隧穿结装置和磁电装置的层的第二端子; 以及耦合到磁电装置的第三端子。

10. 发明公开

EP2712079A1 Magnetic logic unit (MLU) cell and amplifier having a linear magnetic signal 有权转让
标题翻译： MLU-Zelle undVerstärkermit linearem magnetischen Signal
公开(公告)号：EP2712079A1
公开(公告)日：2014-03-26
申请号：EP12290316.4
申请日：2012-09-25
申请人： Crocus Technology S.A.
发明人： Prejbeanu, Ioan Lucian , Dieny, Bernard , MacKay, Kenneth , Cambou, Bertrand
IPC分类号： H03F15/00 , G11C11/00 , G11C11/16
CPC分类号： H01L43/02 , G11C11/16 , G11C11/1675 , H01L43/10 , H03F15/00 , H03K19/18
摘要： The present disclosure concerns magnetic logic unit (MLU) cell (1) comprising a first and second magnetic tunnel junction (2), each comprising a first magnetic layer (21) having a first magnetization (210), a second magnetic layer (23) having a second magnetization (230), and a barrier layer (22); and a field line (4) for passing a field current (41) such as to generate an external magnetic field (42) adapted to adjust the first magnetization (210); the first and second magnetic layers (21, 23) and the barrier layer (22) being arranged such that the first magnetization (210) is magnetically coupled antiparallel with the second magnetization (230) through the barrier layer (22); the MLU cell (1) further comprising a biasing device (50) arranged for applying a static biasing magnetic field (53) oriented substantially parallel to the external magnetic field (42) such as to orient the first magnetization (210) at about 90° relative to the second magnetization (230), the first and second magnetizations being oriented symmetrically relative to the direction of the external magnetic field (42).
摘要翻译：本公开涉及包括第一和第二磁性隧道结（2）的磁逻辑单元（MLU）单元（1），每个包括具有第一磁化（210）的第一磁性层（21），第二磁性层（23）具有第二磁化（230）和阻挡层（22）; 以及用于通过场电流（41）的场线（4），以产生适于调节第一磁化（210）的外部磁场（42）; 所述第一和第二磁性层（21,23）和所述阻挡层（22）被布置成使得所述第一磁化（210）通过所述阻挡层（22）与所述第二磁化（230）反平行地磁耦合; 所述MLU单元（1）还包括偏置装置（50），所述偏置装置（50）布置成施加基本上平行于所述外部磁场（42）定向的静态偏置磁场（53），以便将所述第一磁化（210）定向在约90° 相对于第二磁化（230），第一和第二磁化相对于外部磁场（42）的方向对称取向。

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