专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

EP3171232B1 ATOMIC OSCILLATOR 有权
公开(公告)号：EP3171232B1
公开(公告)日：2018-10-24
申请号：EP16195500.0
申请日：2016-10-25
申请人： Seiko Epson Corporation
发明人： Nishida, Tetsuo
IPC分类号： G04F5/14
CPC分类号： H03L7/26 , G04F5/145 , H01L31/16 , H01L33/40 , H01L33/60 , H01L33/64 , H01S5/00 , H01S5/02461 , H01S5/0425 , H01S5/18302 , H01S5/18311 , H01S5/343 , H01S2301/176
摘要： An atomic oscillator includes a gas cell having alkali metal atoms sealed therein; a light source that irradiates the gas cell with light; and a light detecting unit that detects the quantity of light transmitted through the gas cell. The light source includes an optical oscillation layer having a first reflective layer, an active layer, and a second reflective layer laminated therein in this order, an electrical field absorption layer having a first semiconductor layer, a quantum well layer, and a second semiconductor layer laminated therein in this order, and a heat diffusion layer that is disposed between the optical oscillation layer and the electrical field absorption layer and has a higher thermal conductivity than that of the second reflective layer.

2. 发明授权

EP1291989B1 NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND OPTICAL APPARATUS INCLUDING THE SAME 有权
标题翻译：发光NITRIDE半导体元件和光学装置，其
公开(公告)号：EP1291989B1
公开(公告)日：2006-12-13
申请号：EP01926138.7
申请日：2001-05-07
申请人： SHARP KABUSHIKI KAISHA
发明人： TSUDA, Yuhzoh , YUASA, Takayuki , ITO, Shigetoshi
IPC分类号： H01S5/343 , H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/00 , H01S5/2009 , H01S5/305 , H01S5/34333 , H01S5/3434 , H01S5/34346
摘要： A nitride semiconductor light-emitting device characterized in that it includes a light-emitting layer (106) having a multiple quantum well structure where quantum well layers and barrier layers are alternately formed, the composition of the material of the quantum well layer is XN1-x-y-zAsxPySbz (0 ≤ x ≤ 0.15, 0 ≤ y ≤ 0.2, 0 ≤ z ≤ 0.05, x + y + z > 0) where X represents one or more kinds of group III element, and the barrier layers are made of a nitride semiconductor containing at least Al.

3. 发明公开

EP3160061A4 OPTICAL TRANSMITTER, WAVELENGTH ALIGNMENT METHOD AND PASSIVE OPTICAL NETWORK SYSTEM 审中-公开
公开(公告)号：EP3160061A4
公开(公告)日：2017-11-01
申请号：EP15853952
申请日：2015-10-23
申请人： HUAWEI TECH CO LTD
发明人： LIAO ZHENXING , WANG LINGJIE , ZHOU MIN , HUANG JING
IPC分类号： H04B10/572 , H01S5/024 , H01S5/0687
CPC分类号： H04B10/572 , H01S5/00 , H01S5/02212 , H01S5/02415 , H01S5/02438 , H01S5/0687
摘要： Embodiments of the present invention disclose an optical transmitter, a wavelength alignment method, and a passive optical network system. For the optical transmitter, a 10 G-DML, an MPD 1, an MPD 2, a collimation lens, and a narrowband optical filter are disposed in a TO to achieve monitoring of an optical power, received optical powers are monitored by using the MPD 1 and the MPD 2, the detected optical powers are output to a wavelength locking monitoring circuit by using a TO pin, variations, which are detected by the wavelength locking monitoring circuit, of the optical power and a variation of a wavelength locking factor K0 are separately compared with corresponding thresholds, and a comparison result are sent to a wavelength locking control circuit, to enable the wavelength locking control circuit to adjust, according to the comparison result and by using the TO pin, a temperature of a TEC to perform wavelength alignment. Wavelength locking control is performed on a wavelength of a 10 G-DML and a filter by using a novel wavelength monitor loop, thereby achieving an objective of a high modulation rate with a low cost and low power consumption, where a chirp phenomenon is reduced.

4. 发明公开

EP1291989A1 NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND OPTICAL APPARATUS INCLUDING THE SAME 有权
标题翻译：发光NITRIDE半导体元件和光学装置，其
公开(公告)号：EP1291989A1
公开(公告)日：2003-03-12
申请号：EP01926138.7
申请日：2001-05-07
申请人： Sharp Kabushiki Kaisha
发明人： TSUDA, Yuhzoh , YUASA, Takayuki , ITO, Shigetoshi
IPC分类号： H01S5/343 , H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/00 , H01S5/2009 , H01S5/305 , H01S5/34333 , H01S5/3434 , H01S5/34346
摘要： A nitride semiconductor light emitting device includes an emission layer (106) having a multiple quantum well structure where a plurality of quantum well layers and a plurality of barrier layers are alternately stacked. The quantum well layer is formed of XN 1-x-y-z As x P y Sb z (0≤x≤0.15, 0≤y≤0.2, 0≤z≤0.05, x+y+z>0) where X represents one or more kinds of group III elements. The barrier layer is formed of a nitride semiconductor layer containing at least Al.

5. 发明公开

EP3358244A1 LIGHT SOURCE DEVICE AND PROJECTION DEVICE 有权
公开(公告)号：EP3358244A1
公开(公告)日：2018-08-08
申请号：EP16850648.3
申请日：2016-09-26
申请人： Panasonic Intellectual Property Management Co., Ltd.
发明人： FUKAKUSA, Masaharu
IPC分类号： F21S2/00 , F21V5/04 , F21V9/16 , G02B3/08 , H01L33/50 , H01L33/58 , H01S5/022 , F21Y115/30
CPC分类号： H01S5/005 , F21K9/64 , F21S2/00 , F21V5/04 , F21V9/30 , F21Y2115/30 , G02B3/08 , G02B26/0816 , G03B21/2013 , G03B21/2033 , H01L33/50 , H01L33/58 , H01S5/00 , H01S5/022
摘要： A light source device (1) includes: a semiconductor light emitting element (11) (laser element); an optical element (20) that has a plurality of lens regions (21) which are a plurality of divided regions, and that changes an intensity distribution of a light beam emitted from the semiconductor light emitting element (11), by the plurality of lens regions (21); and a phosphor element (30) that emits light having, as excitation light (54), the light which has had the intensity distribution changed by the optical element (20). The phosphor element (30) is disposed so that a light emitting surface of the phosphor element (30) is inclined with respect to a plane having an optical axis of the excitation light (54) as a normal line, the plurality of lens regions (21) have respective first focal points different from each other, and light beams incident on the plurality of lens regions (21) and focused on the first focal points overlap on the light emitting surface of the phosphor element (30).

6. 发明公开

EP0985952A4 IMAGE DISPLAY AND LIGHT-EMITTING DEVICE 审中-公开
标题翻译： BILDANZEIGE UND LICHTEMITTIERENDE VORRICHTUNG
公开(公告)号：EP0985952A4
公开(公告)日：2004-07-14
申请号：EP99909298
申请日：1999-03-23
申请人： MITSUBISHI ELECTRIC CORP
发明人： NAGAI HARUHIKO , KAMIZAWA SADAOMI , NISHINO KO
IPC分类号： G02B3/00 , G02B27/14 , G02F1/1335 , G02F1/13357 , H01S3/00 , H01S5/00 , H01S5/40 , H04N9/31
CPC分类号： G02B3/04 , G02B3/0056 , G02B3/0062 , G02B19/0028 , G02B19/0057 , G02B19/009 , G02B27/0927 , G02B27/0961 , G02B27/123 , G02B27/145 , G02B27/149 , G02F1/133526 , G02F1/13362 , H01S3/005 , H01S5/00 , H01S5/4025 , H04N9/3105 , H04N9/3152
摘要： A liquid crystal projector having a simple optical system and operating at a high efficiency of use of light, comprises a light-emitting device (50), a parallel transforming optical system (60), an optical switch (70), and a display optical system (80). The light-emitting device (50) includes LD arrays (51, 52, 53) where semiconductor lasers (54) are arranged two-dimensionally. The output beams from the semiconductor lasers (54) are transformed into parallel beams by means of the lens arrays (61, 62, 63). Since the output beams from the semiconductor lasers (54) are linearly P- or S-polarized, no polarization transforming optical system is needed. By adequately combining semiconductor lasers (54), the shapes of the LD arrays (51, 52, 53) can be the same as those for light utilization of a red-light transmission liquid crystal panel (71), a green-light transmission liquid crystal panel (72), and a blue-light transmission liquid crystal panel (73).
摘要翻译：液晶投影仪由发光器件50，并行转换光学系统60，光学开关70和显示光学系统80组成，以便获得简单的光学系统和高的液体的光利用率水晶投影机。发光器件50应用纵向和横向排列的由半导体激光器54组成的LD阵列51,52和53。来自半导体激光器54的输出光束通过透镜阵列61,62和63转换为平行光束。由于来自半导体激光器54的输出光束是波P或波S的线偏振光束，所以不需要偏振转换光学系统。通过可选地组合半导体激光器54，可以使LD阵列51,52或53的形状与红色透射型液晶面板71的光利用形状相同，绿色透射型液晶面板 72或蓝色透射型液晶面板73

7. 发明公开

EP3382911A1 METHODS AND APPARATUS FOR TRANSMITTING AND RECEIVING BURST DATA 审中-公开
公开(公告)号：EP3382911A1
公开(公告)日：2018-10-03
申请号：EP17164387.7
申请日：2017-03-31
申请人： Nokia Solutions and Networks Oy
发明人： Pöhlmann, Wolfgang , Borkowski, Robert
IPC分类号： H04B10/50 , H01S5/00 , H04B10/54 , H04B10/572
CPC分类号： H04B10/504 , H01S5/00 , H04B10/506 , H04B10/54 , H04B10/572
摘要： The present invention discloses a method of transmitting and receiving burst data in an optical network. The signal that is to be transmitted comprises a preamble signal with a duration of a first time t 1 and a payload signal comprising user data.
Wherein, an electrical energy delivered by the preamble signal from a beginning of the preamble signal to a second time t 2 is less than an electrical energy delivered by a normal preamble signal from a beginning of the predetermined preamble signal to the second time t 2 , 0 2 ≤ t 1 , the normal preamble signal having a duration of the first time t 1 , comprising a repeated sequence composed of logical "1 "(s) and logical "0"(s); wherein, the logical "1" and logical "0" in the normal preamble signal have same current amplitude as those in the payload signal.

8. 发明公开

EP3171232A1 ATOMIC OSCILLATOR 审中-公开
标题翻译：原子振荡器
公开(公告)号：EP3171232A1
公开(公告)日：2017-05-24
申请号：EP16195500.0
申请日：2016-10-25
申请人： Seiko Epson Corporation
发明人： Nishida, Tetsuo
IPC分类号： G04F5/14
CPC分类号： H03L7/26 , G04F5/145 , H01L31/16 , H01L33/40 , H01L33/60 , H01L33/64 , H01S5/00 , H01S5/02461 , H01S5/0425 , H01S5/18302 , H01S5/18311 , H01S5/343 , H01S2301/176
摘要： An atomic oscillator includes a gas cell having alkali metal atoms sealed therein; a light source that irradiates the gas cell with light; and a light detecting unit that detects the quantity of light transmitted through the gas cell. The light source includes an optical oscillation layer having a first reflective layer, an active layer, and a second reflective layer laminated therein in this order, an electrical field absorption layer having a first semiconductor layer, a quantum well layer, and a second semiconductor layer laminated therein in this order, and a heat diffusion layer that is disposed between the optical oscillation layer and the electrical field absorption layer and has a higher thermal conductivity than that of the second reflective layer.
摘要翻译：原子振荡器包括其中密封有碱金属原子的气室; 用光照射气室的光源; 以及检测透过气室的光量的光检测部。光源包括具有第一反射层，活性层和第二反射层的光学振荡层，电
子吸收层具有第一半导体层，量子阱层和第二半导体层以及布置在光学振荡层和电场吸收层之间并具有比第二反射层更高的热导率的热扩散层。

9. 发明公开

EP3160061A1 OPTICAL TRANSMITTER, WAVELENGTH ALIGNMENT METHOD AND PASSIVE OPTICAL NETWORK SYSTEM 审中-公开
标题翻译：光发射机，波长对准方法和无源光网络系统
公开(公告)号：EP3160061A1
公开(公告)日：2017-04-26
申请号：EP15853952.8
申请日：2015-10-23
申请人： Huawei Technologies Co. Ltd.
发明人： LIAO, Zhenxing , WANG, Lingjie , ZHOU, Min , HUANG, Jing
IPC分类号： H04B10/572
CPC分类号： H04B10/572 , H01S5/00 , H01S5/02212 , H01S5/02415 , H01S5/02438 , H01S5/0687
摘要： Embodiments of the present invention disclose an optical transmitter, a wavelength alignment method, and a passive optical network system. For the optical transmitter, a 10 G-DML, an MPD 1, an MPD 2, a collimation lens, and a narrowband optical filter are disposed in a TO to achieve monitoring of an optical power, received optical powers are monitored by using the MPD 1 and the MPD 2, the detected optical powers are output to a wavelength locking monitoring circuit by using a TO pin, variations, which are detected by the wavelength locking monitoring circuit, of the optical power and a variation of a wavelength locking factor K0 are separately compared with corresponding thresholds, and a comparison result are sent to a wavelength locking control circuit, to enable the wavelength locking control circuit to adjust, according to the comparison result and by using the TO pin, a temperature of a TEC to perform wavelength alignment. Wavelength locking control is performed on a wavelength of a 10 G-DML and a filter by using a novel wavelength monitor loop, thereby achieving an objective of a high modulation rate with a low cost and low power consumption, where a chirp phenomenon is reduced.
摘要翻译：本发明的实施例公开了光发射机，波长对准方法和无源光网络系统。对于光发送器，在TO中设置10G-DML，MPD1，MPD2，准直透镜和窄带滤光器以实现对光功率的监测，通过使用MPD监测所接收的光功率 1和MPD 2中，检测到的光功率通过TO引脚输出到波长锁定监测电路，波长锁定监测电路检测到的光功率变化量和波长锁定因子K0的变化量分别为分别与相应的阈值进行比较，并将比较结果发送给波长锁定控制电路，以使波长锁定控制电路根据比较结果并通过使用TO引脚来调节TEC的温度以执行波长对准。通过使用新型波长监测回路对10G-DML和滤波器的波长进行波长锁定控制，从而实现低成本和低功耗的高调制速率目标，其中啁啾现象减少。

10. 发明公开

EP1291989A4 NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND OPTICAL APPARATUS INCLUDING THE SAME 有权
标题翻译：优质VORRICHTUNG DAMIT的优势NITRID-HALBLEITERBAUEMENT
公开(公告)号：EP1291989A4
公开(公告)日：2005-05-04
申请号：EP01926138
申请日：2001-05-07
申请人： SHARP KK
发明人： TSUDA YUHZOH , YUASA TAKAYUKI , ITO SHIGETOSHI
IPC分类号： H01L33/06 , H01L33/32 , H01L33/34 , H01S5/00 , H01S5/20 , H01S5/30 , H01S5/323 , H01S5/343 , H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/00 , H01S5/2009 , H01S5/305 , H01S5/34333 , H01S5/3434 , H01S5/34346
摘要： A nitride semiconductor light-emitting device characterized in that it includes a light-emitting layer (106) having a multiple quantum well structure where quantum well layers and barrier layers are alternately formed, the composition of the material of the quantum well layer is XN1-x-y-zAsxPySbz (0 ≤ x ≤ 0.15, 0 ≤ y ≤ 0.2, 0 ≤ z ≤ 0.05, x + y + z > 0) where X represents one or more kinds of group III element, and the barrier layers are made of a nitride semiconductor containing at least Al.
摘要翻译：氮化物半导体发光器件包括具有多个量子阱结构的发射层（106），其中多个量子阱层和多个势垒层交替堆叠。量子阱层由XN1-xy-zAsxPySbz（0≤x≤0.15,0≤y≤0.2,0≤z≤0.05，x + y + z> 0）形成，其中X表示一种或多种III族元素。阻挡层由至少含有Al的氮化物半导体层形成。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式