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    • 1. 发明公开
    • Charged particle beam system with an ion generator
    • 蜂巢TEM TEM。。。。。。
    • EP2372743A2
    • 2011-10-05
    • EP11172096.7
    • 2003-09-18
    • FEI Company
    • Stewart, DianeKnowles, RalphKimball, Brian
    • H01J37/00H01J37/244H01J37/26
    • H01J37/26H01J37/244H01J2237/0045H01J2237/2448H01J2237/2605
    • A charged particle beam (306) system uses an ion generator (302) for charge neutralization on a work piece (307). Secondary or backscattered particles (320) enter a chamber (310) of the ion generator (302) to ionize an ion producing gas there. In some embodiments, the ion generator is configured to maintain an adequate gas pressure in the ion generator to generate ions, but a reduced pressure in the remainder of the vacuum chamber (308), so that another column can operate in the chamber either simultaneously or after an evacuation process that is much shorter than a process that would be required to evacuate the chamber from the full pressure required at the ion generator. The invention is particularly useful for repair of photolithography masks in a dual beam system.
    • 带电粒子束(306)系统使用离子发生器(302)在工件(307)上进行电荷中和。 次级或后向散射的颗粒(320)进入离子发生器(302)的室(310),以将离子产生气体离子化。 在一些实施例中,离子发生器被配置为在离子发生器中保持足够的气体压力以产生离子,而在真空室(308)的其余部分中减小压力,使得另一个柱可以同时在腔室中操作 在疏散过程之后比从离子发生器所需的全部压力排空室所需的工艺要短得多。 本发明对于双光束系统中的光刻掩模的修复特别有用。
    • 9. 发明公开
    • Controlled charge neutralization of Ion-implanted articles
    • Kontrollierte中和统计学家Aufladung von Artikelnwährend离子植入
    • EP1585166A2
    • 2005-10-12
    • EP05252111.9
    • 2005-04-04
    • BURLE TECHNOLOGIES, INC.
    • Starcher, Ronald
    • H01J37/317H01J37/02
    • H01J37/3171H01J37/026H01J2237/0045
    • A means of neutralizing the excess charge on workpieces, such as semiconductor wafers, that results from ion-implantation processes, wherein the excess positive charge on a small area of the workpiece surface is locally sensed, and in response, an appropriate dose of charge-compensating electrons is delivered from an electron emission source to the area of excess charge on the workpiece. A charge-sensing probe and a voltage-controlled electron generator array are configurationally and operatively coupled in a closed feedback loop, and are made to scan the surface of the workpiece, in close but non-contacting proximity to the workpiece. Arrays of charge-sensing probes and electron generator arrays can be configured for rapid coverage of the implanted areas of the workpiece. The present invention has significant advantages over other methods, such as plasma and electron showers and plasma flood systems, for neutralizing the excess charge due to ion implantation.
    • 一种中和离子注入工艺产生的工件(例如半导体晶片)上的过量电荷的方法,其中局部检测工件表面的小区域上的过量正电荷,并且作为响应,适当剂量的电荷 - 补偿电子从电子发射源输送到工件上的过量电荷区域。 电荷感测探针和电压控制的电子发生器阵列在闭合反馈回路中构造和操作地耦合,并且被制造成以与工件接近但非接触的方式扫描工件的表面。 电荷感测探针和电子发生器阵列的阵列可以被配置为快速覆盖工件的注入区域。 本发明与诸如等离子体和电子淋浴和等离子体淹水系统的其它方法相比具有显着的优点,用于中和由于离子注入引起的过量电荷。