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1. 发明授权

EP1613791B1 METHODS AND APPARATUS FOR CONTROLLING FORMATION OF DEPOSITS 有权
标题翻译：方法和系统控制的矿床
公开(公告)号：EP1613791B1
公开(公告)日：2010-11-03
申请号：EP04809290.2
申请日：2004-02-19
申请人： CREE, INC.
发明人： SUMAKERIS, Joseph John , PAISLEY, Michael James , O'LOUGHLIN, Michael, John
IPC分类号： C23C16/44 , C23C16/455
CPC分类号： C23C16/45519 , C23C16/4401 , C23C16/455 , C23C16/488
摘要： Parasitic deposits are controlled in a deposition system (100) for depositing a film on a substrate (20), the deposition system of the type defining a reaction chamber for receiving the substrate and including a process gas (P) in the reaction chamber and an interior surface contiguous with the reaction chamber. Such control is provided by flowing a buffer gas (B) between the interior surface and at least a portion of the process gas to form a gas barrier layer such that the gas barrier layer inhibits contact between the interior surface and components of the process gas.

2. 发明公开

EP0328417A1 Apparatus for semiconductor process including photo-excitation process 失效
标题翻译： AnlagefürHalbleiterverfahren einschliesslich eines photochemischen Verfahrens。
公开(公告)号：EP0328417A1
公开(公告)日：1989-08-16
申请号：EP89301316.9
申请日：1989-02-13
申请人： Suda, Toshikazu , PLEXTOR CO., LTD.
发明人： Suda, Toshikazu
IPC分类号： C23C16/48 , C23C16/44 , C23C16/50
CPC分类号： C23C16/45502 , C23C16/455 , C23C16/45514 , C23C16/482 , C23C16/488
摘要： An apparatus for use in semiconductor fabrication that includes use of a photo-excitation process is provided with a revolving gas chamber (1) at the upper or side part of a gas reaction chamber (2), an internal or external light source, a partition (4) having a centrally located circular opening provided between the revolving gas chamber and the gas reaction chamber, or the revolving gas chamber is made smaller than the gas reaction chamber. The revolving gas chamber has gas inlets (5,6) oriented at an angle with respect to the center of the revolving gas chamber to produce a gas flow in one direction to form a laminar flow of gas that revolves and thereby prevents process reactions from contaminating the light source or light transmitting window.
摘要翻译：包括使用光激发工艺的半导体制造中使用的装置在气体反应室（2）的上部或侧部设置有旋转气体室（1），内部或外部光源，隔板（4）具有设置在旋转气体室和气体反应室之间的中心定位的圆形开口，或者旋转气体室比气体反应室小。旋转气室具有相对于旋转气体室的中心成角度定向的气体入口（5,6），以在一个方向上产生气流以形成旋转的层流，从而防止过程反应被污染光源或光传输窗口。

3. 发明公开

EP0095275A2 Photo-assisted CVD 失效
标题翻译： Photochemische Dampfabscheidung。
公开(公告)号：EP0095275A2
公开(公告)日：1983-11-30
申请号：EP83302597.6
申请日：1983-05-09
申请人： ENERGY CONVERSION DEVICES, INC.
发明人： Allred, David , Reyes, Jaime , Walter, Lee , Ovshinsky, Stanford
IPC分类号： C23C16/48
CPC分类号： C23C16/488 , C23C16/047 , C23C16/482
摘要： A process and apparatus (10) for depositing a film (22) from a gas involves introducing the gas to a deposition environment containing a substrate (14), heating the substrate (14), and irradiating the gas with radiation having a preselected energy spectrum, such that a film (22) is deposited onto the substrate (14). In a preferred embodiment, the energy spectrum of the radition is below or approximately equal to that required to photochemically decompose the gas. In another embodiment, the gas is irradiated through a transparent member (24) exposed at a first surface (58) thereof to the deposition environment, and a flow of substantially inert gaseous material is passed along the first surface (58) to minimize deposition thereon.

4. 发明公开

EP2253734A2 CVD method and apparatus 有权
标题翻译： Verfahren zur Gasphasenbeschichtung。
公开(公告)号：EP2253734A2
公开(公告)日：2010-11-24
申请号：EP10176491.8
申请日：2004-02-19
申请人： Cree, Inc.
发明人： Sumakeris, Joseph , Paisley, Michael , O'Loughlin, Michael
IPC分类号： C23C16/44 , C23C16/455 , C23C16/48
CPC分类号： C23C16/45519 , C23C16/4401 , C23C16/455 , C23C16/488
摘要： A method for controlling parasitic deposits in a system (101) for depositing a film on a substrate (20). The system comprises a reaction chamber (106) for receiving the substrate. The method comprises:
flowing a process gas through the reaction chamber in a substantially horizontal flow direction;
flowing a buffer gas through the reaction chamber in the flow direction to form a flowing gas barrier layer between an interior surface contiguous with the reaction chamber and at least a portion of the process gas, such that the gas barrier layer inhibits contact between the interior surface and the components of the process gas. The buffer gas flows through the reaction chamber at substantially the same velocity as the process gas and a substantially laminar flow of the buffer gas is provided along the interior surface to at least a location downstream of the substrate.
摘要翻译：一种用于控制用于在衬底（20）上沉积膜的系统（101）中的寄生沉积物的方法。该系统包括用于接收衬底的反应室（106）。该方法包括：使工艺气体沿基本水平的流动方向流过反应室; 在流动方向上使缓冲气体流过反应室，以在与反应室邻接的内表面与处理气体的至少一部分之间形成流动气体阻隔层，使得阻气层阻止内表面和工艺气体的组分。缓冲气体以与处理气体基本相同的速度流过反应室，并且沿着内表面提供基本层流的缓冲气体至少到基底的下游位置。

5. 发明授权

EP0260097B1 CVD method and apparatus 失效
标题翻译： CVD方法和装置
公开(公告)号：EP0260097B1
公开(公告)日：1992-12-09
申请号：EP87307896.8
申请日：1987-09-07
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Takayama, Touru , Inujima, Takashi , Odakaa, Seiichi , Hayashi, Shigenori , Hirose, Naoki
IPC分类号： C23C16/48 , C23C16/50 , H01L21/205
CPC分类号： H01L21/02164 , C23C16/0245 , C23C16/402 , C23C16/4405 , C23C16/482 , C23C16/488 , C23C16/517 , C23C16/56 , H01L21/0217 , H01L21/022 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02277 , H01L21/31608 , H01L21/31612 , Y10S148/017 , Y10S148/043 , Y10S148/045 , Y10S438/905

6. 发明公开

EP0260097A1 CVD method and apparatus 失效
标题翻译： CVD-Verfahren und Vorrichtung。
公开(公告)号：EP0260097A1
公开(公告)日：1988-03-16
申请号：EP87307896.8
申请日：1987-09-07
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Takayama, Touru , Inujima, Takashi , Odakaa, Seiichi , Hayashi, Shigenori , Hirose, Naoki
IPC分类号： C23C16/48 , C23C16/50 , H01L21/205
CPC分类号： H01L21/02164 , C23C16/0245 , C23C16/402 , C23C16/4405 , C23C16/482 , C23C16/488 , C23C16/517 , C23C16/56 , H01L21/0217 , H01L21/022 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02277 , H01L21/31608 , H01L21/31612 , Y10S148/017 , Y10S148/043 , Y10S148/045 , Y10S438/905
摘要： An improved CVD (chemical vapour deposition) apparatus (1) for depositing a uniform film comprises a reaction chamber (3), a substrate holder (7) and a plurality of light sources (5) for photo CVD and/or a pair of electrodes (49) for plasma CVD. The substrate holder (7) is a cylindrical multifaceted prism which is encircled by the light sources (5) and/or electrodes (49), and which is arranged to be rotated about its axis during the CVD process by a driving device (9). The apparatus (1) enables substrates (15) mounted on the substrate holder (7) to be uniformly exposed to the CVD enhancement effects of light and/or plasma so that even CVD layers are obtained throughout the surfaces to be coated.
摘要翻译：用于沉积均匀膜的改进的CVD（化学气相沉积）设备（1）包括反应室（3），衬底保持器（7）和用于光CVD的多个光源（5）和/或一对电极（49）用于等离子体CVD。衬底保持器（7）是由光源（5）和/或电极（49）包围的圆柱形多面体棱镜，并且其被布置成通过驱动装置（9）在CVD处理期间绕其轴线旋转，。装置（1）使得安装在基板保持器（7）上的基板（15）能够均匀地暴露于光和/或等离子体的CVD增强效果，使得在待涂覆的整个表面上均匀地获得CVD层。

7. 发明公开

EP0054189A1 Improved photochemical vapor deposition method 有权转让
标题翻译： Verfahren zur photochemischen Dampfabscheidung。
公开(公告)号：EP0054189A1
公开(公告)日：1982-06-23
申请号：EP81109700.5
申请日：1981-11-14
申请人： Hughes Aircraft Company
发明人： Peters, John W. , Gebhart, Frank L.
IPC分类号： C23C14/28 , H01L21/203 , H01L21/363 , B01J19/08
CPC分类号： C23C16/047 , C23C16/488
摘要： e specification discloses an apparatus and process for use in the photochemical vapor deposition of a selected radiation-opaque material on a target in a photochemical vapor deposition system having a reaction chamber with at least a portion thereof formed of quartz to provide a quartz window therein, and which prevents undesirable deposits on the quartz window to thereby enhance the efficiency and rate of the photochemical vapor deposition process. The apparatus comprises, among other things, a film of a predetermined material, such as a perfluorinated polyether, deposited on the internal face of the quartz window within the reaction chamber, with the predetermined material being characterized by being transparent to a selected wavelength of radiation and having a relatively low adhesive affinity for the selected material being deposited.
摘要翻译：本说明书公开了一种用于光化学气相沉积系统中的选定的辐射不透明材料的光化学气相沉积的装置和方法，该光化学气相沉积系统具有反应室，其中至少一部分由石英形成，以在其中提供石英窗口，并且其防止石英窗上的不期望的沉积，从而提高光化学气相沉积工艺的效率和速率。该装置尤其包括沉积在反应室内的石英窗的内表面上的预定材料（例如全氟化聚醚）的膜，其中预定材料的特征在于对选定波长的辐射是透明的并且对所沉积的所选择的材料具有相对低的粘合亲和力。

8. 发明公开

EP0521615A2 Method and apparatus for forming thin film and multilayer film 失效
标题翻译：装置和方法的用于生产薄膜和多层膜。
公开(公告)号：EP0521615A2
公开(公告)日：1993-01-07
申请号：EP92305002.5
申请日：1992-06-01
申请人： MATSUSHITA RESEARCH INSTITUTE TOKYO, INC.
发明人： Yamada, Yuka , Mutoh, Katsuhiko
IPC分类号： C23C16/48 , C23C16/52
CPC分类号： C23C16/487 , C23C16/483 , C23C16/488 , C23C16/52
摘要： A thin film forming method and apparatus utilise a photo CVD technique for forming, on a substrate, a thin film of desired thickness or a multilayer film composed of alternate depositions of different kinds of thin films. The apparatus comprises a reaction chamber (51) into which is introduced a reactive gas which is irradiated by light (57) projected through a light introducing window (58) to decompose the reactive gas. The reduced film deposition rate, due to clouding of the light introducing window (58) is corrected so as to form a thin film of a desired thickness.
摘要翻译：一种薄膜形成方法和装置，利用用于形成光CVD法，在基板，所需厚度的薄膜或多层膜，由不同种薄膜交替沉积的。该装置包括一个反应室（51）到所有被引入其通过光（57）照射的反应性气体通过所有光导入窗（58）投影到分解反应气体。减小的膜沉积速率，由于光导入窗（58）的混浊进行校正，以形成一厚度所需的薄膜。

9. 发明授权

EP0310347B1 Thin film forming apparatus 失效
标题翻译：薄膜成型设备
公开(公告)号：EP0310347B1
公开(公告)日：1992-11-25
申请号：EP88308966.6
申请日：1988-09-28
申请人： SUMITOMO METAL INDUSTRIES, LTD.
发明人： Akahori, Takashi, c/o Sumitomo Metal Ind.Ltd. , Nakayama, Satoshi, c/o Sumitomo Metal Ind.Ltd.
IPC分类号： C23C16/48 , C23C16/54
CPC分类号： C23C16/54 , C23C16/488

10. 发明公开

EP0319021A2 Apparatus for laser chemical vapour deposition 失效
标题翻译： VorrichtungfürlaserunterstütztenDampfniederschlag。
公开(公告)号：EP0319021A2
公开(公告)日：1989-06-07
申请号：EP88120152.9
申请日：1988-12-02
申请人： FUJITSU LIMITED
发明人： Mukai, Ryoichi
IPC分类号： H01L21/31 , C23C16/22 , C23C16/48
CPC分类号： C23C16/483 , C23C16/488
摘要： The present invention relates to a method of forming a deposition film using a laser CVD technique which is capable of increasing the irradiation area without lowering laser beam energy and easily adjusting the irradiation angle of the laser beam. The present invention includes a method of forming a deposition film using a laser CVD technique and is characterised in that the surface of the deposition substrate is irradiated at a relatively low angle with the laser beam so that the deposition substrate is all included within the range of the laser beam in the direction of propagation of the laser beam. According to the present invention, energy efficiency of the laser beam to be irradiated is enhanced. Moreover, the irradiation angle of the laser beam is easily adjustable.
摘要翻译：本发明涉及一种使用激光CVD技术形成沉积膜的方法，该技术能够增加照射面积而不降低激光束能量并且容易地调节激光束的照射角度。本发明包括使用激光CVD技术形成沉积膜的方法，其特征在于，沉积基板的表面以与激光束相对较低的角度照射，使得沉积基板全部包含在激光束在激光束的传播方向上。根据本发明，提高了被照射的激光束的能量效率。此外，激光束的照射角度容易调节。

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