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1. 发明授权

EP2616771B1 MICROMACHINED MONOLITHIC 6-AXIS INERTIAL SENSOR 有权
公开(公告)号：EP2616771B1
公开(公告)日：2018-10-31
申请号：EP11826069.4
申请日：2011-09-18
申请人： Fairchild Semiconductor Corporation
发明人： ACAR, Cenk
IPC分类号： G01C19/56 , G01P15/18 , G01P15/125
CPC分类号： B81B3/0018 , B81C1/00158 , G01C19/5712 , G01C19/5755 , G01P15/125 , G01P15/18 , G01P2015/082 , G01P2015/084
摘要： The device layer of a 6-degrees-of-freedom (6-DOF) inertial measurement system can include a single proof-mass 6-axis inertial sensor formed in an x-y plane, the inertial sensor including: a main proof-mass section suspended about a single, central anchor; a central suspension system configured to suspend the 6-axis inertial sensor from the single, central anchor; and a drive electrode including a moving portion and a stationary portion, the moving portion coupled to the radial portion. The drive electrode and the central suspension system are configured to oscillate the 6-axis inertial sensor about a z-axis normal to the x-y plane.

2. 发明公开

EP2870445A1 MICROELECTROMECHANICAL LOAD SENSOR AND METHODS OF MANUFACTURING THE SAME 审中-公开
标题翻译：微机电负荷传感器和方法及其生产
公开(公告)号：EP2870445A1
公开(公告)日：2015-05-13
申请号：EP13739328.6
申请日：2013-07-03
申请人： Campbell, Ian , Diestelhorst, Ryan
发明人： Campbell, Ian , Diestelhorst, Ryan
IPC分类号： G01L1/14 , G01L1/26 , G01L5/16 , G01L1/18
CPC分类号： G01L1/18 , B81B3/0018 , B81C1/00134 , G01L1/148 , G01L1/26 , G01L5/162
摘要： A microelectromechanical (“MEMS”) load sensor device for measuring a force applied by a human user is described herein. In one aspect, the load sensor device has a contact surface in communication with a touch surface which communicates forces originating on the touch surface to a deformable membrane, on which load sensor elements are arranged, such that the load sensor device produces a signal proportional to forces imparted by a human user along the touch surface. In another aspect, the load sensor device has an overload protection ring to protect the load sensor device from excessive forces. In another aspect, the load sensor device has embedded logic circuitry to allow a microcontroller to individually address load sensor devices organized into an array. In another aspect, the load sensor device has electrical and mechanical connectors such as solder bumps designed to minimize cost of final component manufacturing.

3. 发明公开

EP2656006A2 STRUCTURE PLANAIRE POUR GYROMÈTRE TRI-AXE 有权转让
标题翻译：平面结构FOR A三轴陀螺
公开(公告)号：EP2656006A2
公开(公告)日：2013-10-30
申请号：EP11815479.8
申请日：2011-12-20
申请人： ONERA (Office National d'Etudes et de Recherches Aérospatiales)
发明人： ROLAND, Iännis , MASSON, Stève , DUCLOUX, Olivier
IPC分类号： G01C19/56
CPC分类号： B81B3/0018 , G01C19/5656 , G01C19/5747
摘要： The invention relates to an inertial sensor (2) able to measure information relating to rotation in 3 orthogonal axes, comprising a support and a vibrating sensitive element (6) secured to the support; said sensitive element (6) having a deformable frame (10) which extends in a plane (X-Y) and at least two deformable projections (13, 14; 15, 16) which extend in the same plane (X-Y); characterized in that the inertial sensor extends in one and the same plane; the deformable frame (10) and said at least two deformable projections (13, 14; 15, 16) have a plane of symmetry parallel to the plane (X-Y); said at least two projections are rectilinear beams which have an approximately square cross section, are not collinear and are preferably approximately orthogonal to one another; each of said deformable beams (13, 14; 15, 16) being connected only by one of their ends to the deformable frame (10) at a location at which the amplitude of the primary vibration mode is at a maximum; and in that said sensor has a device for detecting each of the secondary vibration modes.

4. 发明公开

EP2616771A2 MICROMACHINED MONOLITHIC 6-AXIS INERTIAL SENSOR 审中-公开
标题翻译： MICRO PROCESSED单片六轴惯性
公开(公告)号：EP2616771A2
公开(公告)日：2013-07-24
申请号：EP11826069.4
申请日：2011-09-18
申请人： Fairchild Semiconductor Corporation
发明人： ACAR, Cenk
IPC分类号： G01C19/56 , B81B3/00 , B81C1/00
CPC分类号： B81B3/0018 , B81C1/00158 , G01C19/5712 , G01C19/5755 , G01P15/125 , G01P15/18 , G01P2015/082 , G01P2015/084
摘要： The device layer of a 6-degrees-of-freedom (6-DOF) inertial measurement system can include a single proof-mass 6-axis inertial sensor formed in an x-y plane, the inertial sensor including a main proof-mass section suspended about a single, central anchor, the main proof-mass section including a radial portion extending outward towards the edge of the inertial sensor, a central suspension system configured to suspend the 6-axis inertial sensor from the single, central anchor, and a drive electrode including a moving portion and a stationary portion, the moving portion coupled to the radial portion, wherein the drive electrode and the central suspension system are configured to oscillate the 6-axis inertial sensor about a z-axis normal to the x-y plane.

5. 发明公开

EP2524390A2 MIKROELEKTROMECHANISCHES HALBLEITERBAUELEMENT SENSOR 有权转让
标题翻译：微机电半导体传感器元
公开(公告)号：EP2524390A2
公开(公告)日：2012-11-21
申请号：EP11700636.1
申请日：2011-01-10
申请人： ELMOS Semiconductor AG
发明人： DOELLE, Michael
IPC分类号： H01L21/18
CPC分类号： B81C1/00158 , B81B3/0018 , B81B3/0021 , B81B3/007 , B81B3/0072 , B81B3/0081 , B81B2201/0235 , B81B2201/0264 , B81B2203/0127 , B81C1/00626 , B81C99/0035 , B81C2201/019 , G01L9/0047 , H01L29/4916 , H01L29/84
摘要： The micro-electromechanical semiconductor component is provided with a semiconductor substrate (4, 5), a reversibly deformable bending element (8a) made of semiconductor material, and at least one transistor that is sensitive to mechanical stresses, said transistor being designed as an integrated component in the bending element (8a). The transistor is arranged in an implanted active region pan (78a) that is made of a semiconductor material of a first conducting type and is introduced in the bending element (8a). Two mutually spaced, implanted drain and source regions (79, 80) made of a semiconductor material of a second conducting type are designed in the active region pan (78a), a channel region extending between said two regions. Implanted feed lines made of a semiconductor material of the second conducting type lead to the drain and source regions (79, 80). The upper face of the active region pan (78a) is covered by a gate oxide (81a). In the area of the channel region, a gate electrode (81) made of polysilicon is located on the gate oxide (81a), a feed line likewise made of polysilicon leading to said gate electrode.

6. 发明公开

EP2168909A1 Microelectromechanical device provided with an anti-stiction structure and corresponding anti-stiction method 有权转让
标题翻译：维克多史蒂夫·史密斯
公开(公告)号：EP2168909A1
公开(公告)日：2010-03-31
申请号：EP09171835.3
申请日：2009-09-30
申请人： STMicroelectronics S.r.l.
发明人： Cazzaniga, Gabriele , Coronato, Luca
IPC分类号： B81B3/00
CPC分类号： B81B3/0018 , B81B3/0013 , B81B2201/0235 , B81B2201/0242
摘要： A microelectromechanical device (100) having a first structural element (6), a second structural element (10), which is mobile with respect to the first structural element (6), and an elastic supporting structure (12), which extends between the first and second structural elements (6) to enable a relative movement between the first and second structural elements. The microelectromechanical device moreover possesses an anti-stiction structure (1), which includes at least one flexible element (2), which is fixed only with respect to the first structural element (6) and, in a condition of rest, is set at a first distance (l 1 ) from the second structural element (10). The anti-stiction structure (1) is designed to generate a repulsive force (F rep ) between the first and second structural elements in the case of relative movement by an amount greater than the first distance (l 1 ).
摘要翻译：具有第一结构元件（6），相对于第一结构元件（6）可移动的第二结构元件（10）的微机电装置（100）和弹性支撑结构（12）第一和第二结构元件（6），以实现第一和第二结构元件之间的相对运动。此外，微电子机械装置还具有防静电结构（1），其包括至少一个柔性元件（2），其仅相对于第一结构元件（6）固定，并且在静止状态下被设置在与第二结构元件（10）的第一距离（l 1）。抗静力结构（1）被设计成在相对运动大于第一距离（11）的量的情况下在第一和第二结构元件之间产生排斥力（F rep）。

7. 发明公开

EP1834162A1 MIKROSYSTEMTECHNISCHES BAUELEMENT MIT EINER UNTER DEM EINFLUSS VON TEMPERATUR[NDERUNGEN VERFORMBAREN EINRICHTUNG 失效转让
标题翻译：技术成分MICROSYSTEMS WITH A在温度的影响下改变可变形DEVICE
公开(公告)号：EP1834162A1
公开(公告)日：2007-09-19
申请号：EP06705760.4
申请日：2006-01-04
申请人： Universität Kassel
发明人： RANGELOW, Ivo , IVANOV, Tzvetan , IVANOVA, Katerina
IPC分类号： G01J5/40
CPC分类号： G01J5/40 , B81B3/0018 , B81B2201/0278 , G01J5/44
摘要： A microsystem component with a device (3) deformable under the influence of temperature changes is disclosed. The device comprises at least one first (4, 5) and second (8) element with differing thermal expansion coefficients and different thermal conductivities. The elements (4, 5; 8) are physically separate and arranged and connected to each other such that the device (3) assumes flexure states which are dependent on the temperature.

8. 发明公开

EP1243902A1 Spectrophotometer with electrostatic microshutter 有权
标题翻译： Spektrophotometer mit electrostatischenMikroverschlüssen
公开(公告)号：EP1243902A1
公开(公告)日：2002-09-25
申请号：EP02006074.5
申请日：2002-03-18
申请人： C.R.F. Società Consortile per Azioni
发明人： Pizzi, Marco
IPC分类号： G01J3/06 , B81B3/00 , G02B26/00
CPC分类号： B81B3/0035 , B81B3/0018 , G01J3/06 , G02B26/02
摘要： A spectrophotometer includes a light source (2), a separator element (3) to separate the light beam emitted from the source (2) into its components corresponding to the different wavelengths and an aligned series of electrostatic microshutters (4) that allow a single wavelength to be selected and sent to a single sensor (6).
摘要翻译：分光光度计包括光源（2），分离器元件（3），用于将从源极（2）发射的光束分离成其对应于不同波长的部件和对准的一系列静电微穿刺器（4），其允许单个波长被选择并发送到单个传感器（6）。

9. 发明授权

EP2628708B1 Substrat microélectronique comprenant une couche de matériau organique enterrée 有权
标题翻译：具有有机材料的掩埋层的微电子衬底
公开(公告)号：EP2628708B1
公开(公告)日：2015-07-01
申请号：EP13154830.7
申请日：2013-02-11
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： Baillin, Xavier , Pornin, Jean-Louis
IPC分类号： B81C1/00 , B81B3/00 , B81B7/00 , H01L21/20
CPC分类号： B81C1/00134 , B81B3/0018 , B81B7/0038 , B81C1/00357 , B81C2201/0108 , B81C2201/019 , B81C2203/0109 , B81C2203/0136 , B81C2203/0145 , H01L21/2007

10. 发明授权

EP1859475B1 METHOD OF FABRICATION OF AL/GE BONDING IN A WAFER PACKAGING ENVIRONMENT AND A PRODUCT PRODUCED THEREFROM 有权转让
标题翻译：在晶圆包装环境中制造AL / GE粘结的方法及由此制造的产品
公开(公告)号：EP1859475B1
公开(公告)日：2015-05-20
申请号：EP06737697.0
申请日：2006-03-09
申请人： InvenSense, Inc.
发明人： NASIRI, Steven, S. , FLANNERY, Anthony, Francis, Jr.
IPC分类号： B81C1/00 , H01L21/00 , H01L21/30 , H01L27/14 , H01L29/82 , H01L23/48
CPC分类号： B81C1/00238 , B23K20/023 , B81B3/0018 , B81B7/007 , B81B2203/0315 , B81B2207/012 , B81B2207/094 , B81C1/00269 , B81C3/001 , B81C2203/0118 , B81C2203/035 , B81C2203/038 , B81C2203/0792 , H01L21/187
摘要： A wafer structure comprising a first substrate comprising a cover wafer, the first substrate including at least one patterned germanium layer; and a second substrate, the second substrate including at least one patterned aluminum layer; characterized in that the at least one patterned germanium layer is bonded to a first portion of the at least one patterned aluminum layer to provide a eutectic alloy and create an electrical and mechanical contact; characterized in that a second portion of the at least one patterned aluminum layer is not bonded to the at least one patterned germanium layer and forms an external bond pad; and characterized in that the first substrate and second substrate form a cavity containing a MEMS structure within the bonded at least one germanium layer and first portion of the at least one patterned aluminum layer.

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